Polycrystalline silicon
Crystallization in self-implanted polycrystalline silicon-on-insulator films
... The goal of this thesis is to characterize the crystallization behavior of self-implanted polycrystalline silicon films, providing an understanding of how two major par[r] ...
122
Polycrystalline silicon nanowires synthesis compatible with CMOS technology for integrated gas sensing applications
... the polycrystalline silicon SiNWs ...the silicon nanowires is shifted to the conduction band edge reducing the sample electrical ...the polycrystalline silicon nanowires for high ...
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Characterization and electrical modeling of polycrystalline silicon vertical thin film transistors
... used in radio frequency identification (RFID) tags [1], random access memories (RAM) [2], flat panel displays [3], and more particularly active matrix flat panel displays involving either liquid crystals (AMLCD [4]) or ...
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Electrical properties of self-aligned gate-all-around polycrystalline silicon nanowires field effect transistors
... ACCEPTED MANUSCRIPT TGT and BGT. Such evaluations give information about quality of the material at the upper and the lower parts of the nanowires. As poly-Si is the active material, DOS estimation was done using the ...
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Effect of doping on the modification of polycrystalline silicon by spontaneous reduction of diazonium salts
... doped polycrystalline silicon materials (N+, N++ and P++) and silicon (100) and (111) used as references is investigated by spontaneous reduction of diazonium ...doped silicon surfaces is ...
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Covalent functionalization of polycrystalline silicon nanoribbons applied to Pb(II) electrical detection
... Covalent functionalization of polycrystalline silicon nanoribbons applied to Pb(II) electrical detection.. Brice Le Borgne, Aurelie Girard, Christophe Cardinaud, Anne-Claire Salaün, Laur[r] ...
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P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology
... silicon into polysilicon. The combined techniques of LPCVD and SPC have been adopted in the lateral TFTs fabrication, combination that was proved to be a way to obtain a high field effect mobility of carriers ...
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Controlled nucleation and growth process for large grained polycrystalline silicon photovoltaics
... In overview,. from this and other works it seems that a relatively high anneal temperature is required to grow a useable large-grained silicon film by this process[r] ...
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An acoustic waveguide based on doubly-bonded silicon/PPT/silicon structures
... Abstract—In this paper, we present new results on the development of piezoelectric transducers based on periodically poled ferroelectric domains in a lithium niobate plate bonded between two silicon wafers. The ...
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Robust silicon waveguide polarization rotator with an amorphous silicon overlayer
... a silicon wire waveguide with a diagonally positioned a-Si overlayer based on the mode evolution principle, as illustrated in ...crystalline silicon (c-Si) wire waveguide is formed with the a-Si top ...the ...
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Alternative chemistries for etching of silicon dioxide and silicon nitride
... The author's research represents the initial stage of a project whose aim is to identify and characterize possible replacements for PFCs in the two principal etching applicati[r] ...
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Des histoires de la Silicon Valley
... Des histoires de la Silicon Valley, Th. Weil, juin 2009 p.8/24 avec les entreprises et à encourager les créateurs d’entreprise. Selon lui, Stanford a surtout eu le mérite, réel, de réagir rapidement aux demandes ...
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Neutral silicon interstitials in silicon carbide: a first principles study
... of silicon interstitials in 4H-SiC The crystal structure of 4H-SiC can be described as the alternating cubic and hexagonal stacking sequence arranged along c-axis in a form of ...of silicon ...
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Origin of negative magnetoresistance in polycrystalline SnO 2 films
... is commonly believed that the particularity in the DOS at the Fermi level, predicted by Altshuler and Aronov, transforms into the Coulomb gap 37 when the system becomes an insulator and hopping transport takes place. 38 ...
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Microcrack-enhanced creep in polycrystalline material at elevated temperature
... It should relaxation time from the strain recovery on unloading be mentioned that further refinements can be made after constant stress tests, provided conditions (1) and by [r] ...
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Silicon recovery from silicon-iron alloys by electrorefining in molten fluorides
... then, that the highest tolerance in SoG-Si is for carbon, oxygen and iron [17–19] . In this work, only metallic impurities (M i ) were taken into account. More specifically, the present work is focused on the separation ...
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Uplift of model steel pipelines embedded in polycrystalline ice
... Uplift of model steel pipelines embedded in polycrystalline ice Rajani, B. B.; Morgenstern, N. R. https://publications-cnrc.canada.ca/fra/droits L’accès à ce site Web et l’utilisation de son contenu sont ...
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Probing superlattices of silicon/silicon-germanium alloy with raman spectroscopy
... / La version de cette publication peut être l’une des suivantes : la version prépublication de l’auteur, la version acceptée du manuscrit ou la version de l’éditeur.. Access and use of[r] ...
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A probabilistic multi-scale model for polycrystalline MEMS resonators
... In the context of the MEMS resonator, this representativity is lost and Statistical Volume Elements (SVE) are considered. These SVEs are generated under the form of a Vorono¨ı tes- sellation with a random orientation for ...
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Correlation between matrix structural order and compressive stress exerted on silicon nanocrystals embedded in silicon-rich silicon oxide
... Keywords: Silicon, Nanocrystals, Stress, Raman, Phonon, Confinement, Order, Disorder, Matrix PACS: ...Background Silicon nanocrystals (Si-NCs) embedded in a silicon-rich silicon oxide (SRSO) ...
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