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oxide layer

On the role of oxygen partial pressure on the composition of the oxide layer formed on alloy 690 at 700°C

On the role of oxygen partial pressure on the composition of the oxide layer formed on alloy 690 at 700°C

... an oxide layer rich in chromium (Cr 2 O 3 ...spinel layer is made ? of Ni, Fe, Mn and ...the oxide composition although it has no effect on the oxidation ...

3

Influence of light ion irradiation of the oxide layer on the oxidation rate of zircaloy-4: Irradiation of the post-transition oxide layer

Influence of light ion irradiation of the oxide layer on the oxidation rate of zircaloy-4: Irradiation of the post-transition oxide layer

... thick oxide layer formed after a 200-days exposure time to PWR environment (see red continuous line with red full circle markers in Figure 4) presents all the vibration bands of the monoclinic phase and ...

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Mechanism of destruction of the protective oxide layer on Alloy 230 in the impure helium atmosphere of Very High Temperature Reactors.

Mechanism of destruction of the protective oxide layer on Alloy 230 in the impure helium atmosphere of Very High Temperature Reactors.

... Abstract. Alloy 230 which contains 22wt.% chromium could be a promising candidate material for structures and heat exchangers (maximum operating temperature: 850°-950°C) in Very High Temperature Reactors (VHTR). The ...

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Degradation Mechanism in La0.8Sr0.2CoO3 [La subscript 0.8 Sr subscript 0.2 CoO subscript 3] as Contact Layer on the Solid Oxide Electrolysis Cell Anode

Degradation Mechanism in La0.8Sr0.2CoO3 [La subscript 0.8 Sr subscript 0.2 CoO subscript 3] as Contact Layer on the Solid Oxide Electrolysis Cell Anode

... contact layer of SOFC ...conducting oxide layer forming between the contact layer and the interconnect was suggested to be responsible for the degradation of the cells due to loss in the ...

9

Dependence of nanocrystal formation and charge storage/retention performance of a tri-layer memory structure on germanium concentration and tunnel oxide thickness

Dependence of nanocrystal formation and charge storage/retention performance of a tri-layer memory structure on germanium concentration and tunnel oxide thickness

... middle layer (3 to 20 nm thick) and a 50 nm thick sputtered silicon oxide capping ...middle layer were synthesized by rapid thermal annealing (RTA) of the as-prepared samples at 1000ºC for 300 s in ...

5

Magnetic tunnel junctions with a zinc oxide - cobalt oxide composite tunnel barrier

Magnetic tunnel junctions with a zinc oxide - cobalt oxide composite tunnel barrier

... thick layer running between the ZnO oxide layer and the Co bottom ...that layer indicates that it corresponds to a CoO oxide film ...

5

Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/ Electrical Performance Study for the Surface Passivation of Silicon Junctions

Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/ Electrical Performance Study for the Surface Passivation of Silicon Junctions

... the oxide layer [ 8 ...alumina layer can effectively enhance the field effect passivation [ 9 ...alumina layer are important parameters for surface ...

9

Increasing the Sensitivity and Selectivity of Metal Oxide Gas Sensors by Controlling the Sensitive Layer Polarization

Increasing the Sensitivity and Selectivity of Metal Oxide Gas Sensors by Controlling the Sensitive Layer Polarization

... metallization was realized by lift-off to define simultaneously a heating resistor and the electrodes of a sensing resistor. Contacts were opened in a previously deposited passivation layer. Finally, the rear side ...

5

Mixtures of room temperature ionic liquid/ethanol solutions as electrolytic media for cerium oxide thin layer electrodeposition

Mixtures of room temperature ionic liquid/ethanol solutions as electrolytic media for cerium oxide thin layer electrodeposition

... the oxide layer as already demonstrated ...the oxide layer, the resistance of this contribution was reported in an Arrhenius plot (Figure 7), as a function of the reverse ...when oxide ...

27

Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

... top oxide in oxide-nitride-oxide dielectric stacks is ...silicon oxide layer develops on the surface of the nitride-oxide ...nitride layer and 共2兲 pilling up of nitrogen ...

5

Synthesis and characterization of Fe-containing oxide powders and carbon nanotube-Fe-oxide nanocomposites

Synthesis and characterization of Fe-containing oxide powders and carbon nanotube-Fe-oxide nanocomposites

... thin layer of -Fe 2 O 3 is formed at their surface, thus preventing a complete oxidation until high temperatures such as 850 °C while helping to retain the face-centered cubic ...iron oxide layer on ...

140

The Abstract MAC Layer

The Abstract MAC Layer

... MAC layer to continuing ...MAC layer automaton connects to the network through the physical layer ...MAC layer automaton composed with a network automaton must satisfy to be considered an ...

29

The abstract MAC layer

The abstract MAC layer

... MAC layer automaton mediates the communication of mes- sages between the user processes and the ...MAC layer automaton via MAC layer inputs bcast(m)i and abort(m)i and MAC layer outputs ...

16

Bearing damage identification in oxide/oxide ceramic matrix composite with a new test design

Bearing damage identification in oxide/oxide ceramic matrix composite with a new test design

... 2.2. Sample design In the preliminary test campaign on standard bearing specimens to characterize the damage development in oxide/oxide CMC [20,21], the tests were stopped at different bearing phases in ...

18

The Abstract MAC Layer

The Abstract MAC Layer

... is no collision detection (i.e., a collision cannot be distinguished from silence), and that a message from a sender i is correctly received by a neighbor j in a particular time slot if and only if i is the only neighbor ...

28

Electrolyte Gated Metal Oxide Transistors

Electrolyte Gated Metal Oxide Transistors

... oxides are quite well investigated materials in EGTs. InGaZnO is widely investigated and is nowadays used for production of displays backplanes. However, there is still lack of knowledge for binary, ternary or ...

141

The Abstract MAC Layer

The Abstract MAC Layer

... For the case where G 6= G ′ , similar techniques can provide a good starting point. Recent work, however, indicates that care must be taken and new strategies and/or assumptions might by required [26, 9, 28]. This ...

32

Comparison between ultrathin films of YSZ deposited at the solid oxide fuel cell cathode/electrolyte interface by atomic layer deposition, dip-coating or sputtering

Comparison between ultrathin films of YSZ deposited at the solid oxide fuel cell cathode/electrolyte interface by atomic layer deposition, dip-coating or sputtering

... Pascal and Ansart, Florence and Bassat, Jean-Marc and Fullenwarth, Julien. Comparison between ultrathin films of YSZ deposited at the solid oxide fuel cell cathode/electrolyte interface by atomic layer ...

14

Homogenization of the elastic behavior of a layer-to-layer angle-interlock

Homogenization of the elastic behavior of a layer-to-layer angle-interlock

... 3D interlock structures are fabrics, which means that they are directly woven in the three dimensions with Z-yarns along the thickness linking different layers together. For that matter, Bogd- anovich and Mohamed pointed ...

14

Optimization of alumina slurry for oxide-oxide ceramic composites manufactured by injection molding

Optimization of alumina slurry for oxide-oxide ceramic composites manufactured by injection molding

... Copyright © 2017 Catherine Billotte et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided ...

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