Conclusion

Parmi les techniques décrites dans ce chapitre, chacune présente des avantages et des inconvénients suivant l’échelle d’investigation et la précision recherchée. Par exemple, pour l’étude de contrainte pour des films minces sur des plaques industrielles (wafer), les méthodes par réflexion laser, Rayons X, photoréflectance, micro-Raman ou encore EBSD sont vraiment appropriées. En revanche, dès lors que les dimensions des objets à observer deviennent sub- microniques (100 nm et moins), la microscopie électronique en transmission est incontournable.

La méthode CBED est toujours considérée comme la méthode phare de mesure de contrainte pour les composants de la microélectronique devançant des techniques telles que la NBD ou bien l’EDCI qui reste une méthode très peu répandue. Dorénavant, avec les microscopes modernes, l’avènement des correcteurs d’aberrations et les progrès considérables effectués dans la technologie des caméras CCD, la haute résolution montre d’énormes possibilités. En terme de précision sur la mesure, l’analyse de phase géométrique (GPA), le peak finding et le calcul de transformées de Fourier locales permettent de déterminer des déformations inférieures au pourcent. GPA et peak finding sont, toutes deux, capables de cartographier les déformations à partir d’une seule image avec une résolution de l’ordre du nanomètre.

De plus, la méthode GPA offre la possibilité de corriger les distorsions des lentilles projecteurs du microscope [Hüe 05] ainsi que les distorsions de la caméra. En améliorant la précision de la méthode, la détermination de faibles déformations (<0,2%) semble possible et, ce, sur des champs de vue atteignant la centaine de nanomètres avec une résolution spatiale de 3 ou 4 nanomètres tout au plus.

Chapitre I: Techniques de mesures de champs de déformations

Chapitre I: Techniques de mesures de champs de déformations

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