[PDF] Top 20 Silicon surface passivation and epitaxial growth on c-Si by low temperature plasma processes for high efficiency solar cells
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Silicon surface passivation and epitaxial growth on c-Si by low temperature plasma processes for high efficiency solar cells
... en plasma, pompes, physique, et sans doute plein d’autres domaines que je n’ai pas eu le temps de dé- couvrir, Dmitri Daineka, Enric Garcia-Caurel, Laurent Baraton, Aurélien Gohier, Kenji Hirata et Emi Sugimura, ... Voir le document complet
229
Growth, structural and electro-optical properties of GaP/Si and GaAsPN/ GaP single junctions for lattice-matched tandem solar cells on silicon
... triple-junction solar cells development (b) Following the development of the mature GaInP/GaAs tandem cell, in 1997, researchers have proposed to add a third ...gap and quasi-lattice-matching with ... Voir le document complet
173
Transmission electron microscopy study of low-temperature silicon epitaxy by plasma enhanced chemical vapor deposition
... At high substrate temperatures (> 600°C), high quality epitaxy can be easily achieved thanks to the thermal energy of the substrate which is the main source of the adatoms ...PECVD, epitaxial ... Voir le document complet
188
Molecular dynamics simulations of H-induced plasma processes and cluster-catalyzed epitaxial growth of thin silicon films
... hydrogenated silicon nanoparticles synthesized in a plasma enhanced chemi- cal vapor deposition (PECVD) reactor have been shown to be ideal precursors for the deposition of high quality ... Voir le document complet
103
III-V/Si tandem solar cells : an inverted metamorphic approach using low temperature PECVD of c-Si(Ge)
... Non epitaxial methods (bonding) Even if direct growth would be the easiest technique to implement in industry, hetero-epitaxial grown Si-based MJSC efficiencies are still limited by the ... Voir le document complet
196
Silicon surface passivation properties of aluminum oxide grown by atomic layer deposition for low temperature solar cells processes
... illuminated surface is about 370 mm by 500 mm, offering enough space to treat multiple samples in the same ...Izarra and Gitton protocol ...sample surface and is about ...sample ... Voir le document complet
159
Towards III-V on silicon solar cells
... M. Da Silva 1 , S. Boyer-Richard 1 , C. Cornet 1 , A. Létoublon 1 , C. Levallois 1 , A. Rolland 1 , J. Even 1 , L. Pédesseau 1 , A. Le Corre 1 , S. Loualiche 1 , L. Lombez 2 , J.-F. Guillemoles 2 , F. Mandorlo 3 , M. ... Voir le document complet
2
Effects of low and high temperature plasma nitriding on electrochemical corrosion of steel
... nitriding temperature raised to 550 °C for the same dura- tion of 10 ...°C for 10 h as representative sample was selected ( ...sectioned and mirror polished and then etched with the ... Voir le document complet
6
High efficiency mesoscopic solar cells using CsPbI3 perovskite quantum dots enabled by chemical interface engineering
... perovskite solar cells by 2D/3D interface ...perovskite solar cells via modification of the TiO 2 /CH 3 NH 3 PbI 3 heterojunction interface with amino ... Voir le document complet
26
Low Temperature Solution-Processable 3D-Patterned Charge Recombination Layer for Organic Tandem Solar Cells
... junction solar cell, patterning of the charge-collecting layer (CCL) has been developed widely to maximize the charge extraction ratio [ 16 – 21 ...techniques for growing nano-wires, nano-rods, and ... Voir le document complet
12
Cell-line Engineering for Low-temperature Growth
... Massachusetts Institute of Technology, Cambridge, Massachusetts. Abstract—In the chemical industry, the rates of reactions are usually enhanced by the use of high-temperature and high- ... Voir le document complet
1
Process and material challenges in the high rate deposition of microcrystalline silicon thin films and solar cells by Matrix Distributed Electron Cyclotron Resonance plasma
... work and had to be optimized. Since the solar cell performance has always been poor, we constantly tried throughout this work to find new di- agnostics indicating a problem in the material or in the ... Voir le document complet
207
Frequency Conversion Layers for Si Solar Cell Efficiency Improvement
... of Silicon solar cell, increasing its ef ficiency while keeping a low cost process is one of the goals of the Si-PV industry to continuously decrease the cost of the power ...a Si ... Voir le document complet
8
Computational design of high performance hybrid perovskite on silicon tandem solar cells
... ratio and match, if not exceed, the one of nuclear and fossil ...the solar-cell ...multi-junction solar cells (MJSC), which combine absorbers with different bandgap energies allowing to ... Voir le document complet
18
Hybrid solar cells based on thin-film silicon and P3HT
... On the contrary, when the incident light first goes through the top electrode and P3HT, two separate peaks clearly appear in the spectral response. Each of it corre- sponds to the absorption maximum of a-Si:H ... Voir le document complet
5
Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications
... In the second part of the paper, we report a detailed investigation of the SEG of InP in STI structures (Fig. 1). After a planarization step, this InP layer serves as a virtual substrate for the subsequent ... Voir le document complet
1
Selective epitaxial growth of III-V semiconductor heterostructures on Si substrates for logic applications
... a low AsH 3 partial pressure ...applies for TBAs, resulting in the adsorption of a monolayer of As which can change the initially non-polar Ge surface into a polar surface and thus ... Voir le document complet
7
Si nanostructures thin films for 3rd generation of solar cells
... experiences and I thank the Lord Almighty for His immense ...Gourbilleau for all that he has done to make me feel comfortable inside and outside the lab, for the valuable discussions, ... Voir le document complet
212
Ultra-low reflection porous silicon nanowires for solar cell applications
... Abstract: High density vertically aligned Porous Silicon NanoWires (PSiNWs) were fabricated on silicon substrate using metal assisted chemical etching ...obtained and the change in the ... Voir le document complet
11
Plasma-enhanced chemical vapor deposition epitaxy of Si on GaAs for tunnel junction applications in tandem solar cells
... PECVD Si on MOVPE GaAs device aiming at obtaining a hybrid ...crystalline silicon was grown successfully by PECVD at 175°C on a p-doped GaAs ...as high as the nominal ...hydrogen plasma ... Voir le document complet
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