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Electrical conduction by interface states in semiconductor heterojunctions

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Figure

Figure 2. Experimental current-inverse thermal voltage curve for same sample as in figure 1, for values of the  applied voltage equal to 0.1, 0.2 and 0.3 V.
Figure 3. Experimental capacitance—frequency curve for zero bias and T = 300 K.
Figure 4. Energy band diagram for CdTe-p/CdS-n heterojunction at V = 0.2 V applied voltage
Figure 5. (a) Conduction band to defect state transition rate R nt  and defect state to valence band transition rate   R pt , as a function of x, for forward biased junction, with V = 0.2 V
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