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Contribution to the thermal conductivity due to the correction term in the frame of the generalized callaway
integral : application to Ge
K.S. Dubey
To cite this version:
K.S. Dubey. Contribution to the thermal conductivity due to the correction term in the frame of the generalized callaway integral : application to Ge. Journal de Physique, 1976, 37 (3), pp.267-269.
�10.1051/jphys:01976003703026700�. �jpa-00208419�
267
CONTRIBUTION TO THE THERMAL CONDUCTIVITY DUE
TO THE CORRECTION TERM IN THE FRAME OF THE GENERALIZED
CALLAWAY INTEGRAL : APPLICATION TO Ge
K. S. DUBEY
Department
ofPhysics, College
ofScience, University
ofBasrah, Basrah, Iraq
(Reçu.le 6 juin 1975,
révisé le 18septembre
et le 13 novembre1975, accepte
le 20 novembre1975)
Résumé. 2014 La contribution à la conductivité thermique de réseau due au terme correctif a été étudiée à hautes températures dans le cadre de l’intégrale de Callaway généralisée en établissant son
expression analytique. En utilisant les expressions obtenues, on calcule la conductivité
thermique
deréseau due au terme correctif dans le domaine de température 100 K-1000 K pour différentes lon- gueurs de diffusion. On trouve que la conductivité thermique due au terme correctif apporte une contribution négligeable à la conductivité thermique totale à hautes températures.
Abstract. 2014 The contribution to the lattice thermal conductivity due to the correction term has been studied at high temperatures in the frame of the generalized Callaway integral by obtaining an analytical expression for it. These expressions, have been used to calculate the lattice thermal conduc-
tivity of Ge in the temperature range 100 to 1 000 K for the different scattering strengths. It is found
that the contribution to the thermal conductivity arising from the correction term is negligible at high temperatures.
LE JOURNAL DE PHYSIQUE TOME 37, MARS 1976, F
Classification Physics Abstracts
7.392
1. Introduction. - The
generalized
form of theCallaway [1]
lattice thermalconductivity expression,
based on two mode conduction of
phonons
hasbeen
recently published [2-4] by
Kosarev et al.[2], [4]
and Parrott
[3]. However,
ingeneralizing
the Calla-way
integral,
these authors did not take thedisper-
sive nature of
phonons
into account. Later on, itwas modified
by Dubey [5]
who did consider thedispersion
ofphonons [6]. Thus,
theCallaway integral
of lattice thermal
conductivity
ishaving
three diffe- rent forms of the correction term(due
to threephonon
normal
processes).
The first form isgiven by
Calla-way himself. The second form is the
generalized
formbased on two mode conduction of
phonons whereas,
the third form is the modified form of the
generalized expression given by Dubey.
The lattice thermal
conductivity
due to the correc-tion term
(W
has been studiedby
several wor-kers
[7-9] using
theCallaway expression
of thecorrection term in which no distinction is made
between transverse and
longitudinal phonons:
Thestudy
of thegeneralized
form of theCallaway integral
also allows one to calculate the contribution to the total lattice thermal
conductivity
of the correction term(M)
due to threephonon
normal processes.In the
present
paper, we have used a modified form of thegeneralized expression given by Dubey
tocalculate the contribution of correction term
(AK)
and to obtain
analytical expressions
for it. The entirestudy
is confined tohigh
temperaturesonly
and theexpressions
obtained are validonly
in the limit of thehigh
temperatures. Asimple expression
has alsobeen obtained
by introducing
a newparameter
p which is the ratio of thescattering strengths
of threephonon
normal andumklapp
processes.Using
theexpressions obtained,
the contribution of the correc-tion term
(AK)
to the total lattice thermal conduc-tivity
of Ge has been calculated in the temperature range 100-1 000 K for the different valuesof p (101
to
10-3).
2.
Theory.
- Thegeneralized
form of theCallaway
lattice thermalconductivity expression
can begiven
as
Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphys:01976003703026700
268
where kB
is the Boltzmannconstant, 1i
is the Planck constant dividedby
2 03C0,CN
1,s is the threephonon
normalprocess
scattering
relaxation rate,CR 1’s
is the combinedscattering
relaxation rate ofumklapp
processesgiven by
CB 1
is theboundary scattering
relaxation rate,Cpt 1
is thepoint
defectscattering
relaxation rate andC3 1
is the three
phonon umklapp
processscattering
relaxation rate. R is a constant whose value can becalculated [6]
from the
dispersion
curve, v is thevelocity
ofphonons,
0 is thetemperature corresponding
tozone-boundary
of the
crystal
and the suffix s is taken to differentiate between transverse andlongitudinal phonons (s
repre- sents mode ofphonons).
4K is the contribution towards total lattice thermalconductivity
due to the correc-tion term. x is
given by x
=(hcolkb T ), w
is thephonon-frequency.
The
expression
for AK can be written aswhere
Similar
types
ofexpressions
can also be written forAT2’
andAL’ 2
with thehelp
of eq.(5), (7), (8)
and
(9),
where suffix T and L represents transverse andlongitudinal phonons respectively.
Since our interests are confined to
high
tempera- tures, thefollowing expressions
have been used in the presentanalysis.
For transverse
phonons
In the above
expressions the boundary scattering
relaxation rate
CB- 1
isneglected
athigh temperatures
due to its very low contribution. Here 0 is theDebye temperature
and a is a constant. The terme- 01,xT
is absorbed in the constant
PT u.
Theseexpressions
are the same as those
given by
Klemens[10].
Simi-larly,
theexpressions
used for thelongitudinal pho-
nons are
given by
One can
therefore,
writeand
where
At
high temperatures,
it is found that x is a very smallquantity
i.e. x 1and x2 ex(e" - 1) - 2 _+
1.Using
the aboveapproximations
and theexpressions
stated above for the
scattering
relaxation rates andneglecting
lower order terms, one obtains the follow-ing expressions :
269
where p is the ratio of the
scattering strengths
of thenormal and
umklapp
processes and it isgiven by
and
If one does
not
differentiate betweenlongitudinal
and transverse
phonons
i.e.assuming
that the arenon-degenerate,
eq.(26)
reduces towhich tells us that AK a
(pE) -’.
This is similar to theprevious findings
ofDubey [8]
based on theCallaway integral.
3. Results and discussions. -
Using
theexpressions
obtained above
(10) (17)
and eq.(2).
AK has been calculated in thetemperature
range 100 to 1 000 K for Ge for the different valuesof p (ratio
of the scatter-ing strengths)
in the framework of thegeneralized
form of the
Callaway integral.
The results arereported
in table I
along
with K. The calculations are made for the different valuesof p ( 103
to10 - 3)
also butonly
the results for p =
103
and p =10-3
arereported
here. The constants used in the
present study
aretaken from the earlier
report
of Sharma et al.[11],
and are therefore not
reported
here. With thehelp
TABLE I
The values
of
AKof
Ge in the temperature range 100-1000 K obtained with thehelp of expressions (10)- (17)
and eq.(2)
Units of K and AK are
watt/deg/cm.
of table
I,
it can be concluded that the contribution of AK towards the total lattice thermalconductivity (K)
is very small incomparison
with K. It is alsofound that for any value
of p (103
to10-3),
AK isshowing negligible
contribution towards K in the entire temperature range 100-1000 K. With thehelp
of the obtainedexpressions (10)-(17),
one cansee that these are very
simple expressions
and thatthey
areeasily computable.
At the sametime,
it can also be concluded that the effect of p on AK can be studied with thehelp
of above obtainedexpressions
at
high temperatures.
Thus one can conclude that the contribution of AK isnegligible
in the frame of thegeneralized Callaway integral
athigh tempera-
tures and one can calculate the lattice thermal conduc-
tivity
of an insulator in the frame of thegeneralized Callaway equation
withoutconsidering
the contri- bution of the correction term due to the threephonon
normal processes at
high temperatures.
Acknowledgments.
- The author wishes to express his thanks to Dr. G. S. Verma and Dr. R. H. Misho for theire constant encouragements. He is also thankful to Dr. K. L. Yadav for his useful discussions.References
[1] CALLAWAY, J., Phys. Rev. 113 (1959) 1046.
[2] KOSAREV, V. V., TAMARIN, P. V. and SHALYAT, S. S., Phys.
Stat. Sol. (b) 44 (1971) 525.
[3] PARROTT, J. E., Phys. Stat. Sol. (b) 48 (1971) 139.
[4] KOSAREV, V. V., TAMARIN, F. V. and SHALYAT, S. S., Phys.
Stat. Sol. (b) 50 (1972) 595.
[5] DUBEY, K. S., Phys. Stat. Sol. (b) 63 (1974) 39.
[6] SHARMA, P. C., DUBEY, K. S. and VERMA, G. S., Phys. Rev. B 3 (1971) 1985.
[7] JOSHI, Y. P., TIWARI, M. D. and VERMA, G. S., Physica 47 (1970) 213.
[8] DUBEY, K. S., Indian J. Pure. Appl. Phys. 11 (1973) 265.
[9] DUBEY, K. S. and VERMA, G. S., Proc. Phys. Soc. Japan 32 (1972) 1202.
[10] KLEMENS, P. G., Solid State Phys. 7 (1958) 1.
[11] SHARMA, P. C., DUBEY, K. S. and VERMA, G. S., Phys. Rev. B 4 (1971) 1306.