USE OF AMORPHOUS HYDROGENATED SILICON CARBIDE AS A REAR-SIDE PASSIVATION LAYER FOR CRYSTALLINE SILICON SOLAR CELLS
Texte intégral
Documents relatifs
Universit´ e Pierre et Marie Curie – Paris 6 Examen semestriel Licence de Math´ ematiques MA380 – Analyse Hilbertienne et Num´ erique.. 11 janvier 2007 10h `
En déduire la dérivée de sinus en
[r]
This paper conveys three important findings: (i) the va- lence band offset for Tm 2 O 3 /Ge of 3.05 6 0.2 eV, deter- mined by Kraut’s method 29 using a single sample
And we also determined the positional relation among atomic species in a-Si:F by observing the change of Rutherford backscattering (RBS) spectra of a-Si:F due to
:H which has high collection efficiency in long wave region. The second is a n inverted p-i-n structure using a-Si:H which has high collection efficiency in short wave region.
The Raman results clearly evidenced that a-Si:H film which has the same thickness as that aluminum layer presents a better crystallisation with a peak position
On the other hand the tendency to local chemical order that the silicon-nitride films seems to display is not surprising keeping in mind that in the crystalline