• Address Modifier Codes Programmable
• Onboard Power Monitor
• Onboard Battery for Power Down Backup
• VMEbus Rev. C Compatible
The MVME215 is a high speed, high performance static CMOS random access memory module with various ca-pacities (up to 1 Mb). It can be accessed via the 8-/16-/32-bit data bus. Circuitry is provided which maintains the information stored in the RAM during power down. This module is ideally suited to applications requiring large-capacity non-volatile storage, for example in diskless systems.
VMEbus INTERFACE
The MVME215 is designed for use as a slave in a VME environment which complies with VMEbus Specification, Rev. C.lt supports the standard addressing range of 16Mb and the extended addressing range of 4Gb. The appro-priate mode is selected by means of address modifier codes.
The data path can be 8-,16- or 32-bit wide. Logic is provided which routes the local 8-bit data paths to their correct counterparts on the VMEbus.
The following slave module types are supported by the MVME215:
SLAVE MODULE OPTIONS:
RMW
BLT Read- UAT ADO
Block Modify- Unaligned Address-Transfer Write Transfer Only Capability Capability Capability Capability
A24 008 (EO) N y N N
The VMEbus BERR* (Bus ERRor) signal will be asserted if a quad byte access is initiated but address line A01 is Address Modifier Lines
A01-A31
Transfer Handshake Line DTACK*
Interrupt Control Lines BERR*
Additional Control Lines SYSRESET*
Power Supply Lines
+
5 V,+
12 V, GND All unused daisy-chained lines like the interrupt and bus grant lines are passed through the module. There is no interrupter on the module.CMOS RAM DEVICES
The MVME215 is populated with 8K x 8 bit static CMOS RAM devices. (256Kb version) or 32K x 8-bit static CMOS RAM devices (512Kb and 1 Mb version).
ADDRESS BUS INTERFACE
The MVME215 can be accessed in the standard ad-dressing range (24-bit address) or the extended address-ing range (32-bit address). The appropriate addressaddress-ing range is determined by decoding the VMEbus address modifier lines.
Selection of the module's base address is provided in 1 Mb, 512Kb, 256K, 128K, or 64K steps depending on the assembly option.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
VMEmodule is a trademark of Motorola Inc.
MOTOROLA MICROCOMPUTER SYSTEMS AND COMPONENTS 2-120
MVME215-1, MVME215-2, MVME215-3
CMOS STATIC RAM BLOCK 1 (8 DEVICES 8K x 8 OR 32K x 8)
CMOS STATIC RAM BLOCK 2 (8 DEVICES 8K x 8 OR 32K x 8)
CMOS STATIC RAM BLOCK 3 (8 DEVICES 8K x 8 OR
32K x 8)
CMOS STATIC RAM BLOCK 4 (8 DEVICES 8K x 8 OR
32K x 8)
Figure 1. MVME215 Block Diagram
DATA BUS INTERFACE
Data transfer to or from the MVME215 can be byte-wide (8-bit), double byte-wide (16-bit), or quad byte-wide (32-bit). The appropriate data path width is decoded by means of the VMEbus signals DSO*, DS1*, A01*, and LWORD*.
ADDRESS MODIFIERS
The MVME215 is delivered with a programmed PROM installed in a socket to decode the address modifier codes. The module will respond if the following address modifier codes are asserted:
A24 slave - $39, $3A, $3D, and $3E A32 slave - $09, $OA, $OD, and $OE
As A24 slave, address lines A16 (A17, A18) through A23 are decoded to generate the module select signal. As A32 slave, address lines A16 (A17, A18) through A31 are de-coded to generate the module select signal.
POWER MONITOR
The module has circuitry that monitors both the
+
5 V and+
12 V supplies. When the 5 V supply decreases to 4.75 V or the 12 V supply decreases to 11.4 V the localpower fail signal is asserted. The local power fail signal is also asserted by the VMEbus SYSRESET* signal.
Asserting the local power fail signal disables all RAM select lines.
BATTERY BACKUP CIRCUITRY
When power is lost or switched off, the information stored in the modules RAM devices is maintained. This is accomplished by means of a NiCad battery mounted on the module.
When the module is powered from the VMEbus, the battery is constantly charged to maintain its maximum capacity. When power is switched off, or the module is removed from the VMEbus power lines, information stored in the RAM will be maintained for about 2500 hours. Lithium batteries may be installed by the user in-stead of a NiCad battery to store the information in RAM for longer periods.
INDICATORS
There are two LEDs provided on the front panel of the MVME215. LED1 is switched on when the board is se-lected. LED2 is switched on if a bus error condition is detected by the MVME215. Any access to the module after the bus error condition has occurred will switch off the bus error LED.
MOTOROLA MICROCOMPUTER SYSTEMS AND COMPONENTS
•
I
MVME215-1, MVME215-2, MVME215-3
CONNECTOR P1 of connectors P1 and P2 are connected to the MVME215.
Rows A, B, and C of connector P1 are used for address, data, and control signal lines.
Power for the CMOS circuits and some pull-up resistors is provided by the battery back-up circuitry which consists of the battery charger, a separate power supply and logic which selects between stand-by and active mode. In the active mode, the CMOS circuits are supplied by a separate bnboard power supply. To suppress CMOS latch-up, the power is derived from the + 12 V power line. In the stand-by mode, the CMOS circuits are supplied stand-by the onboard battery.
CONNECTOR P2
Row B of connector P2 is used for power, address and data lines. Rows A and C are not used.
POWER LINES
The + 5 V and + 12 V power are supplied from the + 5 Vand + 12 V pins of connector P1 and P2. All GND pins
The NiCad battery is continuously charged while power is applied.
MECHANICAL AND ENVIRONMENTAL SPECIFICATIONS
Characteristics Specifications
Power Requirements +5 Vdc +0.25/-0.125 V 1.3 A (typ) + 12 Vdc + 0.61 -0.36 V 30 mA (typ) Operating Temperature 0° to +55°C
Storage Temperature - 20° to + 45°C
Relative Humidity 0% to 90% (non-condensing) Physical Dimensions
Height Double high Eurocard format 9.2 in. (233.6 mm) Depth 6.3 in. (160 mm) Connectors
P1, P2 96 Pin, DIN41612 Front Panel 4 TE, 6 HE
Battery High-Temperature NiCad (as supplied) Lithium batteries (user option) Capacity 256Kb, 512Kb, 1Mb options Access time 230 ns (typ)
AS* -> DTACK* 285 ns (max)
Input VMEbus Rev. C, compatible Output VMEbus Rev. C, compatible
Open-collector outputs (Isink max = 48 mAl Three-state outputs (lsink max = 48/64 mAl ORDERING INFORMATION
Part Number Description
MVME215-1 256Kb CMOS RAM Module. Includes User's Manual.
MVME215-2 512Kb CMOS RAM Module. Includes User's Manual.
MVME215-3 1 Mb CMOS RAM Module. Includes User's Manual.
Notes: All modules are supplied with onboard battery.
For other memory size configurations contact your sales representative.
RELATED DOCUMENTATION
Part Number Description
HB212/D VMEbus Specifications Manual
MOTOROLA MICROCOMPUTER SYSTEMS AND COMPONENTS 2-122