[PDF] Top 20 Double barrier magnetic tunnel junctions for innovative spintronic devices

... top barrier with a smaller area than the bottom ...the barrier translates on a larger number of electrons carrying torque per unit area corresponding to a larger field-like torque coming from the control ... Voir le document complet

... spin-transfer-torque magnetic random-access memory (STT-MRAM) is one of the most promising emerging non- volatile memory technologies ...production for replacing e-FLASH and L3 SRAM ...MRAM devices ... Voir le document complet

... . For CIPT measurement on blanket pMTJ films, a CuN bot- tom electrode was ...cantly for the CuN electrode, resulting in a reduced ...patterned devices with a 80 nm diameter exhibit a higher TMR ... Voir le document complet

... on Magnetic Tunnel Junctions (MTJs) are promising devices as they combine several advantages: non-volatility, high write speed of a few ns, density (6F 2 ), infinite endurance (>10 16 ... Voir le document complet

... an innovative magnetic memory technology, namely spin-transfer torque magnetic ran- dom access memories (STT ...Such devices are composed of magnetic tunnel junctions with ... Voir le document complet

... Fig.1a shows the sheet resistance for simple and dou- ble junctions. When the probes are close to each other (small x), simple and double barrier cases are equivalent. In this case, electrons ... Voir le document complet

... states for two samples with a thin MgO barrier (B and D), ...stronger for the oscillation amplitude in the P state than those with thick MgO barriers (A and ...thin barrier has no influence on ... Voir le document complet

... connected devices around the world is growing fast with a forecast of 30 billion connected objects by 2020 ...well for several decades, CMOS technology has more and more obstacles to continue scaling into ... Voir le document complet

... perpendicular magnetic tunnel junctions focusing in particular on the materials ...obtained for Ta buffer layers [Wor-11] ...diffusion barrier that prevents intermixing between CoFeB ... Voir le document complet

... order magnetic anisotropy on magnetization reversal by spin transfer torque in perpendicularly magnetized magnetic tunnel junctions ...solutions for the switching voltage and the ... Voir le document complet

... of magnetic tunnel junction ...evaluated for typical hardmask film thicknesses 50-300 nm, as well as the RIE patterning of the hardmask down to 50 nm critical ...10% for 80 and 100 nm diameter ... Voir le document complet

... and for all measured ...shape for the antiparallel branch and a double well shape with a maximum at H = 0 for parallel ...similar for all measured devices whatever their ... Voir le document complet

... the amplitude of IEC is of the same order than STT. This decay lenght is very large compared to previous theoretical predictions [ 10 , 39 ] and experimental investigations on SV [ 40 ]. As a matter of fact, the ... Voir le document complet

... investigating spintronic devices has been triggered in both fundamental research and industrial applications since ...1988. For instance, Magnetic Random Access Memories (MRAMs) [1] are ... Voir le document complet

... these double magnetic tunnel junctions is that the STT efficiency can be strongly ...MgO barrier (write ...starting for example from the positive saturation and applying a field ... Voir le document complet

... in magnetic tunnel junctions (MTJs) has been extensively studied 1 – 5 due to its important applications in spintronic ...the junctions. 6 , 7 The simplicity of the struc- tures ... Voir le document complet

... temperature for a 4-ML Co film deposited on a thick Fe ...However, for spin-resolved photoemis- sion analysis, which is a surface technique (detecting depth of a few atomic planes), it is possible to get ... Voir le document complet

... Another way to improve our understanding of magneto-transport in real systems is to consider the presence of defects in the MgO barrier. On the theoretical point of view, the effect of vacancies in MgO was ... Voir le document complet

... external magnetic field and the dc current applied to the ...the tunnel junction is not equal to the fluctuating voltage at the sample contact pads due to the extra impedances added by the contact ...the ... Voir le document complet

... In conclusion, we have demonstrate the high structural quality of Fe/Fe 3 O 4 /MgO/Co fully epitaxial MTJs grown on MgO共001兲 substrates. The magnetotransport measure- ments have revealed a negative TMR value of −22% at ... Voir le document complet