A MATHEMATICAL MODEL OF THE SILICON CHEMICAL VAPOR DEPOSITION IN A ATMOSPHERIC PRESSURE COLD-WALL REACTOR

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Submitted on 1 Jan 1989

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A MATHEMATICAL MODEL OF THE SILICON CHEMICAL VAPOR DEPOSITION IN A

ATMOSPHERIC PRESSURE COLD-WALL REACTOR

Y. Park, G. Min, C. Park, J. Chun

To cite this version:

Y. Park, G. Min, C. Park, J. Chun. A MATHEMATICAL MODEL OF THE SILICON CHEMICAL

VAPOR DEPOSITION IN A ATMOSPHERIC PRESSURE COLD-WALL REACTOR. Journal de

Physique Colloques, 1989, 50 (C5), pp.C5-45-C5-45. �10.1051/jphyscol:1989508�. �jpa-00229531�

JOURNAL DE PHYSIQUE

Colloque C5, supplkment au n05, Tome 50, mai 1989

A MATHEMATICAL MODEL OF THE SILICON CHEMICAL VAPOR DEPOSITION IN A ATMOSPHERIC PRESSURE COLD-WALL REACTOR

Y.J. PARK, G.J. MIN, Y.W. PARK, C.O. PARK* and J.S. CHUN

Department o f Materials Science and Engineering Korea Advanced I n s t i t u t e o f Science and Technology,

PO

Box 131, Cheongryang. Seoul, Korea

* ~ e p a r t m e n t o f Electronic Material Engineering Korea I n s t i t u t e o f Technology, 400, Kusung-dong, Su-gu, Taejon, 302-338, Korea

A b s t r a c t

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The d e p o s i t i o n o f p o l y c r y s t a l l i n e and amorphous s i l i c o n from SiH -H and SiH4-CH H system has been studied. D e p o s i t i o n temperature b e t i e e i 600 and 850% i a v e been used i n a atmospheric pressure r e a c t o r . It i s found t h a t t h e d e p o s i t i o n r a t e o f s i l i c o n i n SiH4-CH -H system i s reduced by about h a l f SiH -HZ system. Therefore, t o i n v f s t ? g a t e the e f f e c t o f Cti i n s i l i c o n d e p o s i t f o n we describe numerical models o f t h e gas-phase hydrodynamics and chemical k i n e t i c s . The chemical k i n e t i c model, which includes a 16-step elementary r e a c t i o n mechanism i n SiH -H system and a 32- step i n SiH -CH -H system f o r the thermal decompositio4 03 s i lane, . p r e d i c t s chemical s p ? c i e t c g n c e n t r a t i o n p r o f i l e s and f l u i d dynamical simul a t ~ o n p r e d i c t s gas-phase temperature and v e l o c i t y p r o f i l e s . The chemical k i n e t i c c a l c u l a t i o n s i n d i c a t e s i g n i f i c a n t d i f f e r e n c e s i n t h e l e v e l s o f s i l i c o n species f o r SiH -H system versus SiH -CH -H system and decomposition o f SiH i s importa$t ?n d e s c r i b i n g s i l i c j n cffernfcal vapor d e p o s i t i o n .

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Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1989508