• Aucun résultat trouvé

Performance evaluation of a GaSbthermophotovoltaic converter

N/A
N/A
Info
Télécharger
Protected

Academic year: 2021

Partager "Performance evaluation of a GaSbthermophotovoltaic converter"

Copied!
1
0
0

Chargement.... (Voir le texte intégral maintenant)

Texte intégral

(1)

Revue des énergies renouvelables

Volume 15, Issue 3, 2012, Pages 383-397

Performance evaluation of a GaSb thermophotovoltaic converter

F. Bouzid, L. Dehimi

Abstract: In recent years, Gallium Antimonide (GaSb), which has smallest bandgap among III-V semiconductors family, became the subject of extensive investigations in the field of thermophotovoltaic (TPV) converters, because of the recent improvements in optoelectronic technology. This paper describes an analytical process used to evaluatethe performance of a GaSb TPV converter under different levels of illumination, taking account of the photons with energy below the cells bandgap by considering the cell’s reflectance to this fraction of incident radiation. The results show that a radiator temperature near 2200 K is most advantageous and a reflectance of 0.98 is necessary for below-bandgap irradiations to obtain conversion efficiency greater than 28%, at 300 K cell temperature. This efficiency will decrease as the cell temperature increase. The obtained results are found to be in good agreement with the available data.

Keywords : Thermophotovoltaic, GaSb, Reflectance, Emissivity, Temperature

Centre de Recherche en Technologies Industrielles - CRTI - www.crti.dz

Powered by TCPDF (www.tcpdf.org)

Références

Télécharger maintenant ( PDF - 1 Page - 7.69 KB )

Documents relatifs

TIME RESOLVED RAMAN SPECTROSCOPY OF OPTICALLY GENERATED PHONONS IN III-V SEMICONDUCTORS

Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1985743.. A schematic representation of a sub-picosecond time resolved pump

KINETICS OF FIELD EVAPORATION OF GALLIUM PHOSPHIDE IN THE PRESENCE OF HYDROGEN

Abstract - Field evaporation of gallium phosphide and field desorption of hydrides from different gallium phosphide surfaces were studied in the temperature range of

Prediction of the conversion efficiency of a GaSbthermophotovoltaic converter heated byradioisotope source

In this paper, we investigated the heat to electricity conversion efficiency of a GaSb radioisotope thermophotovoltaic (RTPV) converter, taking account of the photons with energy

EXPERIMENTAL INVESTIGATIONS OF THE QUANTUM PHOTOVOLTAIC EFFECT IN InAs-GaSb SEMICONDUCTOR SUPERLATTICES

(3), this SL resistivity fall lessens the measured voltage. According to Ref. 1, the sign of the photovoltage depends only on the nature of the SL surface layer. In this

RECENT RESULTS ON THE STRUCTURE OF DISLOCATIONS IN TETRAHEDRALLY COORDINATED SEMICONDUCTORS

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

RECENT ADVANCES IN THE THEORY OF PHONONS IN SEMICONDUCTORS

Struct~lral energies and forces are determined by the total energy of the system of ions and electrons. Within the adiabatic approximation, the electrons respond

AN ATOM-PROBE STUDY OF III-V COMPOUND SEMICONDUCTORS

Field evaporation of semiconductors can be very different from that of metal surfaces primarily because of two reasons: (1) Electric field does not terminate right at the

Mechanisms and etiologies of thrombocytopenia in the intensive care unit: impact of extensive investigations

We assessed the effect of a systematic approach, using routinely available tests, on the proportion of patients in whom the mechanism (primary objective) and etiology