AN ATOM-PROBE STUDY OF III-V COMPOUND SEMICONDUCTORS
Texte intégral
Documents relatifs
Finally, the possibility to integrate plasmonic Gallium nanoparticles onto the III-V material platform for a potential combination of surface-enhanced infrared absorption (SEIRA)
This study confirms the previous results that the passive film formed on the stainless steel surface consists mainly of chromium compounds, possibly the outermost layer of CrO(0H)
The results of varied temperature of analysis are shown in Table 2. The analyses at 35 K and 45 K are composed of a small number of ions, because of the high occurrence of
The documents may come from teaching and research institutions in France or abroad, or from public or private research centers.. L’archive ouverte pluridisciplinaire HAL, est
Ce numéro spécial rassemble un certain nombre d’articles présentés dans le colloque « Surfaces et interfaces de semiconducteurs » qui s’est tenu à Lyon pendant
They took advantage of the broadening which characterizes the first order Raman lines of polished surfaces to analyse the disorder induced by the polishing process.. Recently,
exhibits the corresponding rate of field evaporation during the atom-probe analysis i n the form of a graph of the number of MO ions detected per field-evaporation
A clean tip surface was obtained by field evaporation in hydrogen gas at 20 K and several kinds of metals were deposited on it for the interface study.. The metals studied are