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EFFECT OF TEMPERATURE ON OPTICAL PROPERTIES OF GLOW DISCHARGE
HYDROGENATED AMORPHOUS SILICON FILMS
A. Donnadieu, B. Yous, J. Berger, J. Ferraton, J. Robin
To cite this version:
A. Donnadieu, B. Yous, J. Berger, J. Ferraton, J. Robin. EFFECT OF TEMPERA- TURE ON OPTICAL PROPERTIES OF GLOW DISCHARGE HYDROGENATED AMOR- PHOUS SILICON FILMS. Journal de Physique Colloques, 1981, 42 (C4), pp.C4-655-C4-658.
�10.1051/jphyscol:19814144�. �jpa-00220765�
EFFECT OF TEMPERATURE ON OPTICAL PROPERTIES OF GLOW DISCHARGE HYDROGENATED APiORPHOUS SILICON F I LIIS
A . Donnadieu, B . Y o u s , J.M. B e r g e r , J . P . F e r r a t o n and J . Robin
LaboraLoire d e Speetroscopie 1 1 , Equipe de recherche assoeibe au C.R.R.S., i l n i v e r s i t ~ d e s Sciences e t l'echniques Ou L a n p e d ~ c , 340CO ?do~tpeZ?,ier, France
Abstract* O p t i c a l p r o p e r t i e s of hydrogenated amorphous s i l i c o n f i l m s , prepa- red by glow d i s c h a r g e o n t o f u s e d q u a r t z s u b s t r a t e s h e l d a t temperature TS v a r y i n g between 50 and 350°C, were determined from n e a r normal s p e c u l a r re- f l e c t a n c e and t r a n s m i t t a n c e measurements i n t h e energy range 0.5 t o 5.5 eV.
The measurements were done a t v a r i o u s temperature Tm i n t h e range 95 t o 750 K.
When Tm becomes h i g h e r t h a n TS, i r r e v e r s i b l e v a r i a t i o n s of o p t i c a l gap appear.
An i n t e r p r e t a t i o n i n terms of an hydrogen e v o l u t i o n and a rearrangement of t h e m a t r i x under a n n e a l i n g i s proposed.
I
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Introduction0 Many inveo t i g a t i o n s t o determine how t h e hydrogen is inJorporated i n glow d i s c h a r g e amorphous s i l i c o n f i l m s were done d u r i n g t h e l a s t y e a r s . PRITZCIIE, i n a s y n t h e s i s paper [ l ] , i n d i c a t e d t h e d i f f e r e n t r e s u l t s . The l a v temparature f i l m s (TS < 250°C) r e v e a l a l a r g e amount of polymeric (SiB2)nas w e l l a s monohydride;t h e high temperature f i l m s (TS > 2 5 0 ' ~ ) c o n t a i n predominantly monohydride SiH and o n l y a t r a c e of dihydride. I n o r d e r t o understand t h e bonding c o n f i g u r a t i o n s of hydrogen, same a u t h o r s s t u d i e d , a t room temperature, t h e o p t i c a l p r o p e r t i e s i n f u n c t i o n of H-content of samples and o t h e r s s t u d i e d post-hydrogenated a-Si samples o r hydrogen e v o l u t i o n under s e v e r a l annealings. We determined t h e o p t i c a l p r o p e r t i e s of samples from near-normal measurements of r e f l e c t a n c e and t r a n s m i t t a n c e i n t h e energy range 0.5 t o 5.5 eV. The measurements were performed a t temperature T,va- r y i n g between 95 and 750 K. We found two e f f e c t s : r e v e r s i b l e and i r r e v e r s i b l e va- r i a t i o n s of o p t i c a l gap w i t h Tm. The s i g n of i r r e v e r s i b l e e f f e c t depends on t h e p r e p a r a t i o n temperature Ts.
'I
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method* Samples of glow d i s c h a r g e s i l i c o n (GD) were d e p o s i t e d on q u a r t z s u b s t r a t e s by a c a p a c i t i v e l y coupled r f d i s c h a r g e i n a mixture of.50 % argon-
50 X s i l a n e a t 0.a t o r r . The d e p o s i t i o n r a t e i n c r e a s e d from 2 . 5 . ~ / s f o r d e p o s i t i o n a t 350°C t o 5 A / s a t t h e lowest temperature. We can e s t i m a t e t h a t t h e H : S i r a t i o i n c r e a s e s i n t h i s temperature range from below 8 a t X (TS * 350°C) up t o 25-30 a t X (TS-
50°C). The o p t i c a l l y d e r i v e d t h i c k n e s s e s v a r i e d from 0.9 )1 t o 1.3 fl. The o p t i c a l measurements o f n e a r normal r e f l e c t a n c e and t r a n s m i t t a n c e a t v a r i o u s temperature T m w e r e done i n two a p p a r a t u s which were d e s c r i b e d p r e v i o u s l y[2,3]. The o p t i c a l gap Eg(Tm) was c a l c u l a t e d from a b s o r p t i o n c o e f f i c i e n t a
according t o t h e e q u a t i o n ( a I I ) l f 2 = y [ ~
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E ~ ( T , ) ] where E i s t h e photon energy and y t h e s l o p e of t h e s t r a i g t h l i n e .Each eeasurement a t T,, d i f f e r e n t of room temperature Ta = 295 K , was prece- ded and followed by a m~easurelnent a t room temperature. We c a l l ~ : ( 2 9 5 ~ , Hi) t h e o p t i c a l gap of sample i n M i s t a t e a f t e r t h e pth measurement a t T-
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295 K. Thef o l l o w i n g measurement a t Tm # 295 K can change t h e composition (Rydrogen e v o l u t i o n ) o r t h e form (annealing e f f e c t ) of t h e m a t r i x and produce i r r e v e r s i b l e e f f e c t s . I f
t h e h e a t i n g a t Tm produces r e v e r s i b l e e f f e c t . t h e n Eg(29Srl, Mi)
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Eg(295,
Mi) ;e l s e i f a t Tm t h e m a t r i x changes, t h e i r r e v e r s i b l e v a r i a t on of o p t i c a l i s
Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:19814144
C4-656 JOURNAL DE PHYSIQUE
we can e s t i m a t e t h e v a l u e of o p t i c a l gap a t T a s i f t h e m a t r i x h a s n o t changed by m
Eg(Tm, Mi+l) i s t h e measured o p t i c a l gap, Eg(Tm, Hi) t h e c o r r e c t e d o p t i c a l gap.
This formula can b e used only i f t h e change from Hi e t a t e t o Mi+l s t a t e does n o t modify t h e s l o p e of t h e curve E (T Mi) = f(Tm).
g m' I11
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Experimental r e s u l t s .Fig. 1 shows t h e v a r i a t i o n of (aE) = f ( ~ ) a t v a r i o u s T, f o r a-Sill t h i n f i l m prepared by GD a t TS = 350.C. We observe a s h i f t of o p t i c a l gap t c u a r d s t h e lower e n e r g i e s when T, i n c r e a s e s v i t h o u t s e n s i b l e m o d i f i c a t i o n of t h e s l o p e y. We found t h e same phenomenon f o r a 1 1 s t u d i e d samples.
Pig. 1
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V a r i a t i o n of ( a ~ ) l / ~ v e r s u s Fig. 2-
V a r i a t i o n of o p t i c a l gap Eg(Tm) photon energy E f o r d i f f e r e n t Tm. v e r s u s Tm f o r two GD samples prepared 0 t5 0 % and 350.C.
Table I
Table I g i v e s t h e v a l u e s o b t a i n e d f o r a e v e r a l samples. Pig. 2 shows t h e v a r i a - t i o n of o p t i c a l gap Eg(Tm) v e r s u s Tm f o r two samples : t h e f i r s t one, w i t h a l w hydrogen c o n t e n t , prepared a t TS = 3 5 0 ' ~ (curve a ) , t h e o t h e r w i t h a h i g h hydro- gen c o n t e n t , prepared a t TS
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50.C (curbe b ) . We o b r e r v e f o r each sample-
a ) I r r e v e r s i b l e e f f e c t s . For high TS f i l m s we observe ( f i g . 2 curve a ) i r r e - v e r s i b l e e f f e c t s above a T m o f 600 t o 650 K. The v a r i a t i o n of t h e o p t i c a l gap AEg(Mi+i, Mi) is n e g a t i v e ; t h e mean v a l u e f o r a l l samples i s -0.05 eV a f t e r t h e h e a t i n g a t 673 K and -0.10 eV a f t e r t h e h e a t i n g a t 723 K. We can a t t r i b u t e t h e s e v a r i a t i o n s t o t h e d e c r e a s e i n t h e H-content when t h e temperature i n c r e a s e s . P e r r i n e t a 1 [4] and BruySre e t a 1 [5] i n d i c a t e d t h a t t h e v a r i a t i o n of o p t i c a l gap w i t h t h e H-content is 0.03 eV ( a t %)-I f o r SiB bonds and 0.1 eV ( a t f o r (Sill2), bonds. I f we use t h e l a s t v a l u e , we f i n d t h a t t h e t o t a l hydrogen which i s r e l e a s e d
i s h i g h e r t h a n t h e hydrogen contained b e f o r e h e a t i n g s . I f we use t h e v a l u e r e l a t i v e t o SiH bonds, we f i n d t h a t H-content d e c r e a s e s of about 1.5 a t . Z a f t e r h e a t i n g a t 673 K and 3 a t . X a f t e r h e a t i n g a t 723 K. The t o t a l v a r i a t i o n of H-content cor- responds t o about 70 X of i n i t i a l r a t i o . These o b s e r v a t i o n s a g r e e very w e l l v i t h r e s u l t s and i n t e r p r e t a t i o n given by Zellama e t a 1 [6] and confirm t h a t h i g h TS f i l m s c o n t a i n predominantly monohydride.
For low TS f ilma we observe ( f i g . 2 curve b ) i r r e v e r s i b l e e f f e c t s from a temperature Tm h i g h e r by 50-C t h a n Ts. But h e r e , t h e v a r i a t i o n of t h e o p t i c a l gap i s p o s i t i v e and e q u a l t o about +0,06 eV. This i n c r e a s e is due t o an a n n e a l i n g e f f e c t which produces a rearrangement o f t h e m a t r i x and a d e c r e a s e i n t h e d e n s i t y of s t a t e s i n t h e forbidden band. I f t h e r e is an hydrogen e v o l u t i o n , i t i s n o t ob- s e r v a b l e . A l l low TS f i l m s d e s i n t e g r a t e a t about T m = 573 K.
b) R e v e r s i b l e e f f e c t s . Equation 2 a l l o w s t o c a l c u l a t e t h e c o r r e c t e d o p t i - c a l gap E (T,, Mi) a t high temperature
T,,,. Fin.
4
shows t h e r e s u l t s o b t a i n e dx-t\
f g r GD-samples. For comparison, we p l o t -
t e d t h e v a l u e s r e l a t i v e t o a Chemical
' 4 t\
Vapor D e p o s i t i o n (CVD) s i l i c o n sample prepared a t 650.C [3']. For a l l samples t h e e x p e r i m e n t a l v a l u e s a r e l o c a l i z e d between t h e t h e o r e t i c a l curves of
Varshni [7] and Ravindra e t a1 [8]
.
For ,'e x p e r i m e n t a l curves, i t appears an in- c r e a s e i n t h e s l o p e from CVD curve t o
t h e T = 50.C GD curve when t h e H con- 1.6-T,=350°c G D \
t e n t Sncreases. But t h e s l o p e of c u r v e s \
r e l a t i v e t o GD samples prepared a t TS
-
50-C and TS-
280% seems t h e same.For high TS samples t h e monohydride den- 1.4 -
s i t y i n c r e a s e s and r e a c h e s a c o n s t a n t ~ ~ 6 5 0 ~ c C V D \
v a l u e when TS d e c r e a s e s whereas f o r low \
TS samples t h e monohydride d e n s i t y i s \ \
c o n s t a n t and t h e amount of polymeric 1.2
i n c r e a s e s . We can t h e n suppose t h a t mo- 0 200 4 0 0 6 0 0 &)T,
nohydride phase i n f l u e n c e s t h e s l o p e of Fig. 3
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Experimental v a l u e s (+) and o p t i c a l gap c u r v e s w i t h Tm. t h e o r e t i c a l c u r v e s of Varshni (-) andRavindra (--) of o p t i c a l gap v e r s u s Tm.
c ) Global e f k c r r . The g l o b a l e f f e c t s when Tm i n c r e a s e s a r e d i f f e r e n t
f o r t h e two k i n d s of samples. They b o t h p r e s e n t a r e v e r s i b l e e f f e c t u n t i l the com- p o s i t i o n o r a r r a n g e e n t of s i l i c o n m a t r i x changes. When i r r e v e r s i b l e e f f e c t appears, i t s s i g n depends on TS. For t h e low TS samples t h e e f f e c t of rearrangement o f m a t r i x ( a l t e r a t i o n of t h e d e n s i t y of s t a t e s i n t h e forbidden band) is more *or- t a n t t h a n t h e hydrogen e v o l u t i o n and g i v e s r i s e t o an i n c r e a s e i n o p t i c a l gap ; b u t t h e s e s a q l e s d e s i n t e g r a t e a t about 573 K. For t h e high TS samples t h e i n v e r s e
C4-658 JOURNAL DE PHYSIQUE
p h e n o r n o n appears ; the hydrogen evolu- t i o n predominates on t h e arrangement of t h e matri. and t h e o p t i c a l gap decreases.
As f o r CVD samples, f o r a l l t h e m sam- p l e s t h e o p t i c a l gap t e n d s t w a r d s a c-n v a l u e s around 1.30 eV a t 723 K d e n T i n c r e a s e s ( f i g . 4).
Ibh
knowledge of v a r i a t i o n s of t h e e p t i c a l gap with temperature Tm is impor-t a n t ; w a t l y because of t h e use of t h i s u t e r i a l i n s o l a r energy conversion.
Almowledgement. The a u t h o r s a r e g r a t e f u l t o Prof. G. UEISER and t o J. BEICHLER
T,=~SO"C C V D
from t h e U n i v e r s i t y of MARBWG, RFA, f o r 121
,
providing t h e GD samples and t o Prof. 0 200 400 600
~,k
B.O. SERAPEIN and t o D. BOOTH from t h e
O p t i c a l Sciences Center, U n i v e r s i t y of Fig. 4
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Co~nparison of measured op- Arizona, f o r providing t h e CVD samples. t i c a l gap of CVD and high TS GDs i l i c o n f i l m s . Ref erencea
E l ] E. FRITZCHE S o l a r Energy M a t e r i a l s 3 (1980) 447.
[2] J.P. WRRATDN, C. ANCE and A. WNNADIEU Thin S o l i d Films 78 (1981) 207.
[3] A. DIVBBCEY, B. YOUS, J.M. BERGER, J.P. FERRATON, J. ROBIN and A. DONNADIEU Thin S o l i d F i l m 78 (1981) 235.
[k] J. PEBBIW, I. SOLOIDN, B. BOURDON, J. FONTENILLE and E. LIGEON Thin S o l i d P i l w 6 2 (1979) 327.
[5] J.C. BRUYERE, A. DENEWILLE, A. M I N I , J. FONTBNILLE and H. DANIEUlU J. Appl.
Phys. 51 (1980) 2199.
161 K. ZELLAM, P. GERMAIN, S. BQUELARD, B. BOURDON, J. FONTENILLE and R. DANIELOU Phys. Rev. t o be published.
[7] Y.P. VARSBNI Physica 34 (1967) 149.
[8] N. RAVINDRA and V.K. SRIVASTAVA J. Phye. Chem. S o l i d s 40 (1979) 791.