MOSMemory Commercial

• TEXAS INSTRUMENTS

MOSMemory

Commercial and Military Specifications

1995

MOSMemory Data Book

Commercial and Military Specifications

.TEXAS .

INSTRUMENTS

^prtnted on Recyded Paper

IMPORTANT NOTICE

Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current.

TI warrants performance of its semiconductor products and related software to the specifications applicable at the time of sale in accordance with Tl's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty.

, Specific testing of all parameters of each· device is not necessarily performed, except those mandated by government requirements.

Certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage ("Critical Applications").

TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN L1FE·SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER CAITICAL APPLICATIONS.

Inclusion of TI products in such applications is understood to be fully at the risk of the customer.

Use of TI products in such applications requires the written approval of an appropriate TI officer.

Questions concerning potential risk applications should b~ directed to TI· through a local SC sales office.

In order to minimize risks associated with the customer's applications, adequate deSign and operating safeguards should be provided by the customer to minimize inherent or procedural hazards.

TI assumes no liability for applications assistance, customer product design, software performance,or infringement of patents or services described herein. Nor does TI warrant or representthat any license; either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used.

Copyright@ 1995, Texas Instruments lncorporated·

General Information . .

~~~~~~~~

Selection Guide •

~~~~~~~~.

Definition of Terms .

~D=R=A=M=S==================IEI

SDRAM/VRAMs ~

~~~~~~~=== . .

SIMMS . .

~=========================

Military Products Mechanical Data Logic Symbols

Quality and Reliability

Electrostatic Discharge Guidelines

INTRODUCTION

The 1995 MOS Memory Data Bookfrom Texas Instruments Includes complete detailed specifications on the expanding MOS Memory product line including Dynamic Random Access Memories (DRAMs), Single-In-Une Memory Modules (SIMMs), Erasable Programmable Read-Only Memories (EPROMs), One-Time Programmable Read-Only Memories (OTP PROMs), Electrically Erasable Programmable Read-Only Memories (Flash Memories), and Video RAMs (VRAMs). Also included are military specifications for DRAMs, EPROMs, and VRAMs.

The data book is divided into 12 chapters. Below you will find a brief description of each chapter.

Chapter 1. General Information -Includas an alphanumeric Index for quickly finding device numbers and a part number guide with ordering information.

Chapter 2. Selection Guide - An easy-to-use reference guide that includes specific device Information. Page numbers are also shown for easy access to the detailed specifications.

Chapter 3. Glossarymming Conventions/Data Sheet Structure - Defines terms and standards used throughout the data book.

Chapter 4-8. Product specifications for more than 100 devices can be found in these sections.

Chapter 9. Mechanical Data - Detailed package drawings and specifications are shown in this section.

Chapter 10. Logic Symbols-Includes an explanation and examples oftha IEEE standard.

Chapter 11. Quality and Reliability - Details selected processes and the philosophies of Texas Instruments that are used to ensure high quality standards.

Chapter 12. Electrostatic Discharge Guidelines - Because all MOS Memory devices are ESD-sensitive, handling guidelines are included.

For ordering information or further assistance, please contact your nearest Texas Instruments Sales Office or Distributor as listed in the back of this book.

v

PRODUCT STAGE STATEMENTS

,

Product stage statements are used on Texas Instruments data sheets to indicate the development stage(s) of the product(s) specified in the data sheets.

If all products specified in a data sheet are at the same development stage, the appropriate statement from the following list is placed in the lower left corner of the first page of the data sheet.

PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development.

Characteristic data and other specifications are subject to change without notice.

PRODUCT PREVIEW information concerns products in the formative or design phase of development.

Characteristic data and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products without notice.

If not all products specified in a data sheet are at the PRODUCTION DATA stage, then the first statement below is placed in the lower left corner of the first page of the data sheet. SubsequElnt pages of the data sheet containing PRODUCT PREVIEW information or ADVANCE INFORMATION are then marked in the lower left-hand corner with the appropriate statement given below:

vi

UNLESS OTHERWISE NOTED this document contains PRODUCTION DATA information current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty.

Production processing does not necessarily include testing of all parameters.

ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development.

Characteristic data and other specifications are subject to change without notice.

PRODUCT PREVIEW information concerns products in the formative or design phase of development.

Characteristic data and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products without notice.

Contents

CHAPTER 1. GENERAL INFORMATION

Alphanumeric Index ... 1-3 Ordering Information . . . .. 1-4 DRAM/SDRAM ... 1-4 DRAM ... 1-5 Standard DRAM Module. . . • . . . .. 1-6 Differentiated DRAM Module ... 1-7 EPROMs/FLASH/OTP ...•... 1-8 VRAM ... 1-9 CHAPTER 2. SELECTION GUIDE

Dynamic Random-Access Memory (DRAM) ... 2-3 Synchronous DRAM ... . . . .. 2-9 Video Random-Accesss Memory (VRAM) ... 2-10 Single-In-Une Memory Modules (SIMMS) ... 2-11 Flash Memory ... 2-15 Erasable Programmable Read-Only Memory (EPROM) ... 2-16 One-lime Programmable (OTP) ... 2-17 CHAPTER 3. DEFINITION OF TERMSrrlMING CONVENTIONS

General Concepts and Types of Memories ... 3-3 Operating Conditions and Characteristics ... 3-7 liming Diagram Conventions ...•... 3-13 CHAPTER 4. DYNAMIC RANDOM-ACCESS MEMORY (DRAM)

TMS44460 4194304-bit (1 024K x 4) Enhanced Page Mode, Quad CAS . . . .. 4-5 TMS44460P 4194304-bit (1 024K x 4) Enhanced Page Mode, Quad CAS, Low Power. . . .. 4-5 TMS46460 4194304-bit (1 024K x 4) Low Voltage, Quad

CAS . . . ..

4-5 TMS46460P 4194304-bit (1 024K x 4) Low Voltage, Quad

CAS,

Low Power. . . .. 4-5 TMS44100 4194304-bit (4096Kx 1) Enhanced Page Mode ... 4-27 TMS44100P 4194304-bit (4096Kx 1) Low Power ... 4-27 TMS46100 4194304-bit (4096Kx 1) Low Voltage ... 4-27 TMS46100P 4194304-bit (4096Kx 1) Extended Refresh ... 4-27 TMS44400 4194304-bit (1 024K x 4) Enhanced Page mode ... 4-51 TMS44400P 4194304-bit (1 024Kx 4) Low Power ... 4-51 TMS46400 4194304-bit (1024Kx4)LowVoltage ... 4-51 TMS46400P 4194304-bit (1 024K x 4) Extended Refresh ... 4-51 TMS44165 4194304-bit (256K x 16) Enhanced Page Mode ... 4-73 TMS44165P 4194304-bit (256K x 16) Low Power.. .. . . .. . .. . .. .. .. .. .. .. .. .. .. .. .. .. .. ... 4-73 TMS45160 4194304-bit (256K x 16) Enhanced Page Mode.. .. . .. . . .. .. .. .. .. .. . .. .. • .... 4-93 TMS45160P 4194304-bit (256K x 16) Low Power ... 4-93

vii

TMS45165 TMS45165P TMS416400 TMS416400P TMS417400 TMS417400P TMS426400 TMS426400P TMS427400 TMS427400P TMS416160 TMS416160P TMS426160 TMS426160P TMS418160 TMS418160P TMS428160 TMS428160P TMS464400 TMS464400P TMS464800 TMS464800P TMS464160 TMS464160P TMS416169 TMS416169P TMS418169 TMS418169P TMS426169 TMS426169P TMS428169 TMS428169P

CHAPTER 5.

TMS626402 TMS626802 TMS55160 TMS55165 TMS55161 TMS55166

viii

4194304·bit 4194304·bit 16777216·bit 16777216-bit 16777216·bit 16777216·bit 16777216·bit 16777216·bit 16777216·bit 16777216·bit 16777216·bit 16777216·bit 16777216·bit 16777216·bit 16777216-bit 16777216·bit 16777216·bit 16777216·bit 67108864·bit 67108864·bit 67108864·bit 67108864·bit 67108864-bit 67108864·bit 16777216·bit 16777216·bit 16777216-bit 16777216·bit 16777216·bit 16777216·bit 16777216·bit 16777216·bit

(256K x 16) Enhanced Page Mode ...•... 4·115 (256K x 16) Low Power. . . • . . • . .. 4·115 (4096K x 4) Enhanced Page Mode .•....•...•..•.• 4·135 (4096K x 4) Enhanced Page Mode ...•... 4·135 (4096K x 4) Enhanced Page Mode .•...•. 4·135 (4096K x 4) Enhanced Page Mode ...•... 4·135 (4096K x 4) Low Voltage ...•...•... ; .•... 4·135 (4096K x 4) Low Voltage, Low Power ...•...•... 4·135 (4096K x 4) Low Voltage ... 4·135 (4096K x 4) Low Voltage, Low Power ... 4·135 (1 024K x 16) Enhanced Page Mode ... 4·163 (1 024K x 16) Low Power ...•... 4·163 (1 024K x 16) Low Voltage ... 4·163 (1 024K x 16) Low Voltage, Low Power ... 4·163 (1 024K x 16) Enhanced Page Mode ... 4·163 (1 024K x 16) Low Power ... 4·163 (1 024K x 16) Low Voltage ... 4·163 (1 024K x 16) Low Voltage, Low Power ... 4·163 (16384K x 4) Enhanced Page Mode ... 4·187 (16384K x 4) Enhanced Page Mode, Low Power; ...•... 4·187 (8 192K x 8) Enhanced Page Mode ... 4·187 (8192K x 8) Enhanced Page Mode, Low Power ...•... 4·187 (4096Kx 16) Enhanced Page Mode ... 4·187 (4096K x 16) Enhanced Page Mode, Low Power ... 4·187 (1 024K x 16) Extended Data Out Mode ... 4·191 (1 024K x 16) Extended Data Out Mode, Low Power ... 4·191 (1 024K x 16) Extended Data Out Mode ... 4·191 (1 024K x 16) Extended Data Out Mode, Low Power •... 4·191 (1 024K x 16) Extended Data Out Mode, Low Voltage •...•.... 4·191 (1 024K x 16) Extended Data Out Mode, Low Voltage, Low Power •• 4·191 (1 024K x 16) Extended Data Out Mode, Low Voltage ...•. 4·191 (1 024K x 16) Extended Data Out Mode, Low Voltage, Low Power .. 4·191

SYNCHRONOUS DRAM (SDRAM)

VIDEO RANDOM·ACCESS MEMORY (VRAM)

16777216·bit 16777 216·bit 4194304·bit 4194304·bit 4194304·bit 4194304·bit

(4096K x 4) Synchronous DRAM ...•...• 5·3 .(2048K x 8) Synchronous DRAM •... 5·41

(256K x 16) MultiportVideo RAM ... 5·79 (256K x 16) Multiport Video RAM ... 5·135 (256K x 16) Multiport Video RAM ... 5·191 (256K x 16) Multiport Video RAM ..•...•... 5·251

CHAPTER 6. SINGLE-iN-LINE MEMORY MODULES (SIMMS) TM4100GAD8 4 Mbyte

TM497GU8 4 Mbyte TM4100EAD9 4 Mbyte TM497EU9 4 Mbyte TM124BBK32 4 Mbyte TM124BBK32S 4 Mbyte TM248CBK32 8 Mbyte TM248CBK32S 8 Mbyte TM124BBK32F 4 Mbyte TM124BBK32U 4 Mbyte TM248CBK32F 8 Mbyte TM248BK32U 8 Mbyte TM497BBK32 16 Mbyte TM497BBK32S 16 Mbyte TM893CBK32 32 Mbyte TM893CBK32S 32 Mbyte TM124MBK36B 4 Mbyte TM124MBK36R 4 Mbyte TM248NBK36B 8 Mbyte TM248NBK36R 8 Mbyte TM124MBK36F 4 Mbyte TM124MBK36U 4 Mbyte TM248NBK36F 8 Mbyte TM248NBK36U 8 Mbyte TM124MBK36C 4 Mbyte TM124MBK36S 4 Mbyte TM248NBK36C 8 Mbyte TM248NBK36S 8 Mbyte TM124MBK36G 4 Mbyte TM124MBK36V 4 Mbyte TM248NBK36G 8 Mbyte TM248NBK36V 8 Mbyte TM497MBK36A 16 Mbyte TM497MBK360 16 Mbyte TM497MBM36A 16 Mbyte TM497MBM360 16 Mbyte TM893NBM36A 32 Mbyte TM893NBM360 32 Mbyte

(4096K x 8) Single-Sided (Solder-tabbed) ... 6-3 (4096K x 8) Single-Sided (Solder-tabbed) ... 6-9 (4096K x 9) Single-Sided (Solder-tabbed) ... 6-15 (4096K x 9) Single-Sided (Solder-tabbed) ... 6-23 (1 024K x 32) Single-Sided (Gold-tabbed) .. . . .. 6-29 (1 024K x 32) Single-Sided (Solder-tabbed) ... 6-29 (2048K x 32) Double-Sided (Gold-tabbed) ... 6-29 (2048K x 32) Double-Sided (Solder-tabbed) ... 6-29 (1 024K x 32) Single-Sided (Gold-tabbed) ... 6-39 (1 024K x 32) Single-Sided (Solder-tabbed) ... 6-39 (2048K x 32) Double-Sided (Gold-tabbed) ... 6-39 (2048K x 32) Double-Sided (Solder-tabbed) ... 6-39 (4096K x 32) Single-Sided (Gold-tabbed) ... 6-47 (4096K x 32) Single-Sided (Solder-tabbed) ... 6-47 (8192K x 32) Double-Sided (Gold-tabbed) ... 6-55 (8192K x 32) Double-Sided (Solder-tabbed) ... 6-55 (1 024K x 36) Single-Sided (Gold-tabbed) ... 6-63 (1 024K x 36) Single-Sided (Solder-tabbed) ... 6-63 (2048K x 36) Double-Sided (Gold-tabbed) ... 6-63 (2048K x 36) Double-Sided (Solder-tabbed) ... 6-63 (1 024K x 36) Single-Sided (Gold-tabbed) ... 6-73 (1 024K x 36) Single-Sided (Solder-tabbed) ... 6-73 (2048K x 36) Double-Sided (Gold-tabbed) ... 6-73 (2048K x 36) Double-Sided (Solder-tabbed) ... 6-73 (1 024K x 36) Single-Sided (Gold-tabbed) ... 6-81 (1 024K x 36) Single-Sided (Solder-tabbed) ... 6-81 (2048K x 36) Double-Sided (Gold-tabbed) ... 6-81 (2048K x 36) Double-Sided (Solder-tabbed) ... 6-81 (1 024K x 36) Single-Sided (Gold-tabbed) . . . • . . . .. 6·91 (1 024K x 36) Single-Sided (Solder-tabbed) ... 6-91 (2048K x 36) Double-Sided (Gold-tabbed) ... 6-91 (2048K x 36) Double-Sided (Solder-tabbed) ... 6-91 (4096K x 36) Double-Sided (Gold-tabbed) ... 6-99 (4096K x 36) Double-Sided (Solder-tabbed) ... 6-99 (4096K x 36) Single-Sided (Gold-tabbed) ... " ... 6-107 (4096K x 36) Single-Sided (Solder-tabbed) ... 6-107 (8192K x 36) Double-Sided (Gold-tabbed) ... 6-107 (8192K x 36) Double-Sided (Solder-tabbed) ... 6-107

Ix

CHAPTER 7. FLASH MEMORY

ERASABLE PROGRAMMABLE READ-ONLY MEMORY (EPROM) ONE· TIME PROGRAMMABLE MEMORY (OTP)

TMS28F512A 524288-bit (64K x 8) 12-V Flash Memory ... 7-3 TMS28F010B 1048576-bit (128K x 8) 12-V Flash Memory ... 7-25 TMS28F210 1048576-bit (64K x 16) 12-V Flash Memory ... 7-47 TMS28F020 2097152-bit (256K x 8) Flash Memory ... 7-67 TMS28F200BZT 2097152-bit (256K x 8/512K xi6) Flash Memory ... 7-87 TMS28F200BZB 2097152-bit (256K x 8/512K x 16) Flash Memory ... 7-87 TMS28F400BZT 4194304-bit (256Kx 8/512Kx 16) Flash Memory ... 7-115 TMS28F400BZB 4194304-bit (256K x 8/512Kx 16) Flash Memory ... 7-115 TMS27C256 262144-bit (32K x 8) CMOS EPROM ... 7-143 TMS27PC256 262144-bit (32K x 8) CMOS OTP PROM ... 7-143 TMS27C510 524288~bit (64K x 8) CMOS EPROM ... 7-155 TMS27PC510 524288-bit (64K x 8) CMOS OTP PROM ... 7-155 TMS27C512 524288-bit (64K x 8) CMOS EPROM ... 7-167 TMS27PC512 524288-bit (64K x 8) CMOS OTP PROM ... 7-167 TMS27C010A 1048576-bit (128K x 8) CMOS EPROM ... 7-179 TMS27PC010A 1048576-bit (128K x 8) CMOS OTP PROM ... 7-179 TMS27C210A 1048576-bit (64Kx 16) CMOS EPROM ... 7-191 TMS27PC210A 1 048576-bit (64K x 16) CMOS OTP PROM ... 7-191 TMS27C020 2097152-bit (256K x 8) CMOS EPROM ... 7-201 TMS27PC020 2097152-bit (256K x 8) CMOS OTP PROM ... 7-201 TMS27C040 4194304-bit (512K x 8) CMOS EPROM ... 7-211 TMS27PC040 4194304-bit (512Kx 8) CMOS OTP PROM ... 7-211 TMS27C2404194304-bit (256K x 16) CMOS EPROM ... 7-221 TMS27PC240 4194304-bit (256K x 16) CMOS OTP PROM ... 7-221 CHAPTER 8. MILITARY PRODUCTS

Military Introduction ... 8-3 DYNAMIC RAMS

SMJ44C256 1048576-bit (256K x 4) Enhanced Page Mode . . . .. 8-5 SMJ4C1024 1 048576-bit (1 024K x 1) Enhanced Page Mode ... 8-25 SMJ44100 4194304-bit (4096K x 1) Enhanced Page Mode ... 8-45 SMJ44400 4197304-bit (1 024K x 4) Enhanced Page Mode ... 8-65 SMJ416100 16777216-bit (16385K x 1) Enhanced Page Mode ... 8-85 SMJ416400 16777216-bit (4096K x 4) Enhanced Page Mode ... 8-105 SMJ416160 16777216-bit (1 024K x 16) Enhanced Page Mode ... 8-123 SMJ418160 16777216-bit (1 024K x 16) Enhanced Page Mode ... 8-123 VIDEO RAMS

SMJ44C251B 1048576-bit (256K x 4) Multiport Video RAM ... 8-145 SMJ55161 4194304-bit (256K x 16) Multiport Video RAM ... 8-197 SMJ55166 4194304-bit (256K x 16) Multiport Video RAM ... 8-259

x

EPROMS SMJ27C128 SMJ27C040

131072-bit 4194304-bit

(16K x 8) UV Erasable Programmable Read-Only Memory ••..••.•. 8-319 (512K x 8) UV Erasable Programmable Read-Only Memory ... 8-331 CHAPTER 9. MECHANICAL DATA

MOS Memory Products - Commercial ... 9-5 MOS Memory Products - Military. . . • . . . • . . . .. 9-31 CHAPTER 10. LOGIC SYMBOLS

Explanation of IEEE/IEC Logic Symbols for Memories ...•.•..•.. 10-3 CHAPTER

11.

QUALITY AND RELIABILITY

MOS Memory Products Division Quality and Reliability Information •...•...•..•... 11-3 CHAPTER

12.

ELECTROSTATIC DISCHARGE GUIDELINES

Guidelines for Handling Electrostatic-Discharge Sensitive Devices and Assemblies ... , ..•... 12-3

xi

xII

I General Information

1·1

1·2

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Alphanumeric Index

SMJ27C040 ..•...•... 8-331 TM497BBK32 ... 6-47 SMJ27C128 ... 8-319 TM497BBK32S ... 6-47 SMJ4C1024 ... 8-25 TM497EU9 ... 6-23 SMJ416100 ... 8-85 TM497GU8 ... 6-9 SMJ416160 ... 8-123 TM497MBK36A ... 6-99 SMJ416400 ... 8-105 TM497MBK36Q ... 6-99 SMJ418160 ... 8-123 TM497MBM36A ... 6-107 SMJ44C251B ... 8-145 TM497MBM36Q ... 6-107 SMJ44C256 ..•... 8-5 TM893CBK32 ... , . 6-55 SMJ44100 ... 8-45 TM893CBK32S ... 6-55 SMJ44400 ... 8-65 TM893NBM36A ... 6-107 SMJ55161 ... 8-197 TM893NBM36Q ... 6-107 SMJ55166 ... 8-259 TMS27C010A ... 7-181 TM124BBK32 ... 6-29 TMS27C020 ... 7-203 TM124BBK32F ... 6-39 TMS27C040 ... 7-213 TM124BBK32S ... 6-29 TMS27C210A ...

.

7-193 TM124BBK32U ... 6-39 TMS27C240 ...•.... 7-223 TM124MBK36B ... 6-63 TMS27C256 ... 7-145 TM124MBK36C ...•... 6-81 TMS27C510 ...•... 7-157 TM124MBK36F ... 6-73 TMS27C512 .. ; ... 7-169 TM124MBK36G ... 6-91 TMS27PC010A ... 7·181 TM124MBK36R ... 6-63 TMS27PC020

...

7-203 TM124MBK36S ... 6-81 TMS27PC040 ...

.

^7-213

TM124MBK36U ... 6-73 TMS27PC210A ... 7-193 TM124MBK36V ... 6-91 TMS27PC240 ... 7-223 TM248CBK32 ...••... 6-29 TMS27PC256 ... 7-145 TM248CBK32F ... 6-39 TMS27PC510

...

^7-157

TMS416400P ... 4-133 TMS418160P ... 4-161 TMS418169 ... 4-189 TMS418169P ... 4-189 TMS426160 ....•... 4-161 TMS426160P ... 4-161 TMS426169 ... 4-189 TMS426169P ... 4·189 TMS426400 ... 4-133 TMS426400P ... 4-133 TMS427400 ... 4-133 TMS427400P ... 4-133 TMS428160 ... 4-161 TMS428160P ...•.. 4-161 TMS428169 ... 4-189 TMS428169P ... 4-189 TMS44100 ...•..•... 4-25 TMS44100P ...•...•. 4-25 TMS44165 ... 4-71 TMS44165P ...• 4-71 TMS44400 ... 4-49 TMS44400P ... 4-49 TMS45160 ... 4-71 TMS45160P .•... 4-71 TMS45165 ... 4-113 TMS45165P ... 4-113 TMS46100 ... 4-25 TMS27PC512 ... 7·169

TM248CBK32S ... 6-29 TMS46100P ..•... 4-25

TM248CBK32U ... 6-39 TMS28F010B ... 7-25 TMS46400 ... 4-49 TM248NBK36B ... 6-63 TMS28F020 ... 7-67 TMS46400P ... 4-49 TM248NBK36C ... 6-81 TMS28F200 ... 7-89 TMS464160 ... 4-185 TM248NBK36F ... 6-73 TMS28F210 ... 7·47 TMS464400 ... 4·185 TM248NBK36G ... 6-91 TMS28F400 ... 7-117 TMS464800 ... 4-185 TM248NBK36R ... 6-63 TMS28F512A ... 7-3 TMS55160 ... 5-79 TM248NBK36S ... 6-81 TMS416160 ... 4-161 TMS55161 ... 5·191 TM248NBK36U ... 6-73 TMS416160P ... 4-161 TMS55165 ... 5·135 TM248NBK36V ... 6-91 TMS416169 ... 4-189 TMS55166 ... 5-251 TM4100EAD9 ... 6-15 TMS416169P ... 4-189 TMS626402 ... 5-3 TM4100GAD8 ... 6-3 TMS416400 ... 4-133 TMS626802 ... 5·41

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General Information

DRAMNRAM/FMEM Ordering Information

1-4

Orders for DRAMs and VRAMs described in this book should include an eight-part number as explained in the following example:

Blank Blank 4 8 16 4. Technology:

C

xl x4 )(4 )(8 )(16 CMOS

TMS I 4 C 256

5. Density: - - - ' -10

6. Speed Designator: _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ --' DRAMsNRAMs

-60 60ns -70 70ns -SO SOns -10 100 ns -12 120ns -15 150 ns - 20 200 ns

OJ

7. Package: - - - ' Commercial (Plastic) Military (Ceramic)

OJ Smail-Outline J-lead (SOJ) FQ Small-Outline Leadless Chip Carrier (SOlCC) ON Thin Small-Outline J-Lead (ThinSOJ) FV Leadless Chip Carrier (ClCC)

DZ Small-Outline J-lead (SOJ) HJ Small-Outline J-Lead (SOJ)

SD Zig-Zag In-Une (ZIP) HK Flatpack

N Dual-in-Une (DIP) Hl Low Profile leadless Surface Mount DGA Thin Small-Outline Package JD Dual-In-Une (DIP)

SV Zig-Zag In-Une (ZIP)

8. Temperature Range: - - - ' Commercial

l O·C to 70·C (VRAMs) Blank O·C to 70·C (DRAMs)

Military

M - 55·C to 125·C

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General Information

DRAM Ordering Information

Orders for the 4 Meg and 16 Meg and 64 Meg DRAMs described in this book should include an eight-part number as explained in the following example:

1. PrefIX:

TMS Commercial MOS SMJ Military MOS 2. Product Family:

4 DRAM

~s 1 1

3. Density- Refresh: - - - ' 2 2 Meg 1 K Refresh

4 4 Meg 1 K Refresh 5 4 Meg 512 Cycle Refresh 6 4 Meg 1 K Refresh 3.3 V 7 4 Meg 512 Cycle Refresh 3.3 V 16 16 Meg 4K Refresh 5 V 17 16 Meg 2K Refresh 5 V 18 16 Meg 1KRefresh5V 26 16 Meg 4K Refresh 3.3 V 27 16 Meg 2K Refresh 3.3 V 28 16 Meg 1 K Refresh 3.3 V 64 64 Meg 8K Refresh 3.3 V

4. Organization-I/O: - - - '

10 )( 1 SId 90 )(9 Std

26 )( 2 Quad-CAS 91 x9 WPB

40 )(4 Std 16 x16 Std

41 )(4 WPB 17 x16 WPB

46 )( 4 Quad-CAS 18 x18 Std

80 )(8 Std 19 x18 WPB

81 )(8 WPB

00

5. Functional Mode/Optr.::o"'ns;':':---'

o Enhanced Page Mode

o Enhanced Page Mode 2 CAS (x16 and x18 Devices)

o

Enhanced Page Mode 4 CAS (Quad-CAS Devices)

5 Enhanced Page Mode 2 WE(x16 and x18 Devices) 9 Extended Data 0u1

Extended Data 0u1

9 2 CAS (x16 and x18 Devices) -80

6. Speed D e s l g n a t o r : - - - '

-60 60ns - 80 80 ns

-70 70ns

OM

7. P a c k a g e : - - - ' Commercial (Plastic)

DGA 300-mil Thin Small Ou1line (TSOP) DGB 300-mil Reverse Lead Thin Small Outline

(TSOP)

DGC 400-mil Thin Small Outline (TSOP) (50-mil-pitch)

DGD 400-mil Reverse Lead Thin Small Outline (TSOP) (50-mil-pitch)

DGE 400-mll Thin Small Outline (TSOP) (31-mll-pitch)

DGF 400-mil Reverse Lead Thin Small Ou1line (TSOP) (31-mll-pltch)

OJ 300-mil Small Outline J-Lead (SOJ) (26/24-lead)

ON Thin Small Outline J-Lead (SOJ) DZ 400-mil Small Outline J-Lead (SOJ) 8. Temperature Range:

Commercial Blank O·C to 70·C

Military (Ceramic)

HM Small-Outline Leadless Chip Carrier (SOLCC)

HJ Small-Outline J-Lead (SOJ) HR Flatpack

JD Side-Brazed Dual-In-Llne

Military

M - SS·C to 125·C

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General Information

Standard DRAM Module Ordering Information

1·6

Orders for the standard DRAM Modules described in this book should include a seven-part number as explained in the following example:

TM 024 E AD 9

1. Prefix: _ _ _ _ _ _ _ _ _ _ _ _ -', TM Commercial TI MOS Module

2. Memory D e v i c e : - - - ' , 024 1 Meg DRAM. Enhanced Page Mode

4100 4 Meg DRAM. Enhanced Page Mode 16100 16 Meg DRAM. Enhanced Page Mode

3. Pinout Configuration: _ _ _ _ _ _ _ _ _ _ _ _ _ -..,--J

E G

4. Board Dimensions: _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ -..,--J

AD BD

5. Word Width Output: - - - , - - - ' 8 .. 8

9 .. 9

-10

6. Speed D e s i g n a t o r : - - - ' -60 60ns

-7070ns -80 80ns -10 100ns

7. Temperature Range: _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ -..,--J

Blank O·C to 70·C

L O·C to 70·C (1 Meg only)

~ThXAS

INSTRUMENTS

POST OFFICE BOX 1443 • HOUSTON. TEXAS 77001

General Information

Differentiated DRAM Module Ordering Information

Orders for the mixed DRAM Modules described in this book should include an eight-part number as explained in the following example:

TM 124 1. Prefix: _ _ _ _ _ _ _ _ _ _ --'1

TM Commercial TI MOS Module

2. Density: _ _ _ _ _ _ _ _ _ _ _ _ -.J

256 512 124 246

256K 512K 1 Meg 2 Meg

496 497 892 893

4 Meg

4 Meg - 2K Refresh 8 Meg

8 Meg - 2K Refresh E

3. Pinout Configuration: - - - '

B G M

C K T

E L V

AO

4. Board Dimensions: _ _ _ _ _ _ _ _ _ _ _ _ _ _ ---J

U AD BK BM

9

5. Word Width O u t p u t : - - - '

8 x8

9 x9

32 x32 36 x36 40 x40

B

6. Devices U s e d : - - - ' Blank 8 - '444005 ('124BBK32)

Blank 9-('41OOEAD9) A 2 - '444005 f124GU8A)

B 2 - '444005 + 1 '4C1024 C124EAU9B) B 8 - '444oos + 1 '44460 ('124MBK36B) B 16 - '444005 + 2 '444605 ('246NBK36B) C 8 - '444005 + 2 '44460s C124MBK36C) C 16 - '44400s + 4 '44460s ('124NBK36C)

~TEXAS

INSTRUMENTS

POST OFFICE BOX 1443 • HOUSTON. TEXAS nOO1 1-7

General Information

EPROM, FLASH, OTP Ordering Information

1-8

Orders for EPROMs, OTPs,.and Flash Memories described in this book should Include.a nine-part number as explained in the following example:

1. Prefix: _ _ _ _ _ _ _ _ _ _ _ _ _ _ TMS ...JI TMS

SMJ

Commercial MaS Military MaS

27

2. Product Family: - - - '

27 EPROM/OTP

28 12-V Flash Memory 29 5-V Flash Memory

P

3. Erasability: _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ...J

P Non-erasable (One-Time Programmable) Blank Erasable

C

4. Technology: _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ - - - l

C F LV

CMOS

CMOS Flash Memory Low Voltage

512

5. Density: - - - ' 816

128 256 257 510 512

16K 128K 256K 256K 512K 512K

010A 210A 020 040 200 240 400

1 Meg 1 Meg 2 Meg 4 Meg 2 Meg 4 Meg 4 Meg

-10

6. Speed Designator: - - - ' 80 ns - 8, - 80

100 ns -10, - 100 120 ns - 12, - 120 150ns -1,-15,-150

170ns 200ns 250ns 300ns

-I, -17, -170 - 2, - 20, - 200 Blank, - 25, - 250 -30, -300

FM L 4

7.Pac~ge: ---~

DO Plaslic Thin Small-Oulline (TSOP)

DU Plasllc Thin Smail-Outline (TSOP, Reverse Form) FM Plasllc Chip Carrier (32-Pin) Rectangular FN Plastic Chip Carrier (44-Pin) Square J Ceramic Dual-In-Une (DIP) N Plaslic Dual-In-Une (DIP) PM Square Quad Flat Package (SQFP)

8. Temperature Range: _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ ...1

Commercial Mllilary

L O'C10 70'C M - 55'C to 125'C

E - 40'C 10 85'C Q - 4O'C 10 125'C T -40'Clo 110'C

9.168 Hour Burn-in Opllon: - - - ' Commercial

4 168 Hour Burn-in Blank No Burn-In

Military

Blank 5004 Processing

~ThXAS

INSTRUMENTS

POST OFFICE BOX 1443 • HOUSTON, TEXAS nOOl

General Information

VRAM Ordering Information

Orders for 4 Meg VRAMs described in this book should include an eight-part number as explained in the following example:

1. Prefix: _ _ _ _ _ _ _ _ TMS ....11

TMS SMJ

Commercial MOS MilitaryMOS

5

2. Product Family: - - - '

5 VRAM

3. Density 4 5 16 17

Refresh:

4 Meg 4 Meg 16 Meg 16 Meg 4. Organization Features:

lK Refresh 512 Cycle Refresh 4K Refresh 2K Refresh 40 x 4 Standard

41 x 4 Enhanced Page Mode 80 x 8 Standard

81 x 8 Enhanced Page Mode

16 x16 Standard

17 x16 Enhanced Page Mode

5 16 5

I

5. Functional Mode - Options: ---~

o

Enhanced Page Mode 1 Hyper Page Mode 5 Enhanced Page Mode 6 Hyper Page Mode

-80

6. Speed Designator: - - - ' -80 60 ns

-70 70 ns -80 80 ns -10 100 ns

DGH

7. Package: - - - ' DGH Super Smail-Outline (SSOP)

8. Temperature Range: - - - ' - - - ' Commercial

Blank O·C to 70·C

Military

M -55·Cto 125·C

~TEXAS

INSTRUMENTS

POST OFFICE BOX 1443 • HOUSTON. TEXAS nCOl 1-9

General Information

1·10

~1EXAS

INSTRUMENTS

POST OFF!CE BOX 1443 • HOUSTON, TEXAS nC01

2-1

2-2

~TEXAS

INS1RUMENTS

POST OFFICE. BOX 1443 • HOUSTON, TEXAS 77001

DRAM

MAX POWER DENSITY (WORDS ORGANIZATION x BITS) DEVICE NUMBER ACCESS TIME SUPPLY (na) (V) SMJ4Cl024-80 80 1024Kx 1 SMJ4Cl 024-1 00 100

5:1:10%

SMJ4Cl024-120 120

1024K SMJ4Cl024-150 150

SMJ44C256-80 80 256Kx4 SMJ44C256-100 100

5:1:10%

SMJ44C256-120 120 SMJ4Cl024-150 150 TMS44460-ao* 60

TMS44460-70* 70 5:1:10%

TMS44460-60* 80 TMS44460P-8o* 60

TMS44460P-70* 70 5:1:10%

TMS44460P-8o* 80 1024Kx4

TMS46460-60* 60

TMS46460-70* 70 5:1:10%

TMS46460-80* 80

4096K TMS46460P-ao* 60

TMS46460P-7o* 70 5:1:10%

TMS46460P-8o* 80 TMS441 00-60* 60

TMS441 00-70* 70 5:1:10%

TMS441OD-80* 80 TMS44100P-80* 60

TMS44100P-70* 70 5:1:10%

4096Kx 1

TMS44100P-80* 80 SMJ441 00-80 80

SMJ441 00-1 0 100 5:1:10%

SMJ441 00-12 120

SMJ41616o* 60

16384K 1024)( 16 70 5:1:10%

SMJ418160*

80 tOGA PlastiC Thin Small-Outhne-Package (TSOP)

OJ Plastic Small-Outline J-Lead (SOJ)

FQ Leadless Ceramic Chip Cerrier (Military) (CDCC) HJ Ceramic Small-Outline J-Lead (Military) (SOJ) HK Flatpack (Military)

HKD Flatpack (Military)

HL Small-Outline Leadlass Ceramic Chip Carrier (Military) (SOlCC) HR Flatpack (Military)

JD 400-Mil Ceramic Sidebrazad Dualln-Une Package (Military) (DIP) JOB 300-mil Ceramic Side-Brazed Dualln-Une Package (Military) (DIP) SV Ceramic Zig-Zag Package (ZIP) (Military)

* Advance Information for product under development by TI

MAX POWER DISSIPATION STAND- ACTIVE

(mW) BY

(mW)

22

578 495 11 440 578 495 11 440

385 330 3.6 275

385 330 3.6 275 523

468 11

413 523 468 11 413 468

440 22

385 495

440 11

385

~lExAs

INSTRUMENTS

POST OFFICE BOX 1443 • HOUSTON. TEXAS 77001

Selection Guide

PINS PACKAGEt NOTES PAGE

HJ, FQ, 18,20,

Hl,JD, Military 8-25 20/26

HK,SV HJ, FQ,

20/26 Hl,JD, Military 8-5 HI(, SV

CMOS

24/26 OJ,DGA Enhanced 4-5 Page Mode Quad CAS CMOS 24/26 DJ,DGA Enhanced

Page Mode 4-5 Quad CAS CMOS Enhanced 24{26 DJ,DGA Page Mode 4-5

Low Voltage Quad CAS CMOS Enhanced 24/26 OJ, DGA Page Mode 4-5

Low Voltage Quad CAS CMOS

20/26 DGAOJ Enhanced 4-27 Page Mode CMOS 20/26 DGA, OJ Enhanced

4-27 Page Mode Low Power Military

18,20, HR,JD, CMOS 8-45 28 JDB,Hl Enhanced

Page Mode Military

50 HKD CMOS

8-123 Enhanced Page Mode

2-3

Selection Guide

DRAM (ConUnued)

MAX

ORGANIZATION ACCESS POWER

DENSITY (WORDS x BITS) DEVICE NUMBER nME (n8) SUPPLY (V)

TMS4610D-70* 70

TMS46100-SO* so 3.3:1:10%

TMS461OD-10* 100 4096Kx 1

TMS46100P·70* 70

TMS46100P·60* SO 3.3:1: 10%

TMS461OOP·l0* 100

TMS44400-60* 60

TMS444OD-70* 70 5:1:10%

TMS44400·S0* SO TMS44400P·60:j: 60

TMS44400P.70* 70 5:1:10%

TMS44400P·SO* 60 SMJ44400·S0 SO

SMJ44400·10 100 5",10%

1024K x 4 SMJ44400·12 120 TMS464OD-70* 70 4096K

TMS46400·So* SO 3.3:1: 10%

TMS4640D-10* 100

TMS46400P·7o* 70

TMS46400P·60:j: 60 3.3:1: 10%

TMS46400P·10:j: 100

TMS44165-70 70

TMS44165-80 SO 5:1:10%

TMS44165·10 100 TMS44165P·70 70

TMS44165P·SO 60 5:1:10%

TMS44165p·10 100 256Kx 16

TMS4516D-70 70

TMS45160·60 60 5:1:10%

TMS45160·10 100 TMS45160p·70 70

TMS45160P·60 80 5:1:10%

TMS45160P·10 100

t DGA PlastiC Thin Small·Outllne·Package (TSOP)

DGE Plastic Surface Mount Thin SmaU·Outline Package (TSOP) DJ Plastic Small·Outline J·Lead (SOJ)

DZ Plastic Small·Outline J·Lead (SOJ)

Hl Small·Outline Leadless Ceramic Chip Carrier (Military) (SOlCC) HR Flatpack (Military)

JDB 3OD-mil Ceramic Side·Brazed Dualln·line Package (Military) (DIP) SV Ceramic Zig·Zag Package (ZIP) (Military)

* Advance Information for product under development by TI

MAX POWER DISSIPATION ACTIVE STANDBY

(mW) (mW) 216

1S0 3.6 144

216 180 3.6 144

550 495 11 440 550 495 11 440

46S 22

440 358 252 216 7.2 1S0

252 216 7.2 160

660

578 11

523 660

578 11

523 8S0

770 11

660 880

770 11

660

~TEXAS

INSTRUMENTS

2·4 POST OFFICE BOX 1443 • HOUSTON. TEXAS 77001

PINS PACKAGEt NOTES PAGE

CMOS 20/26 DGA, DJ. Enhanced

4·27 Page Mode Low Voltage CMOS Enhanced 20/26 DGA, DJ Page Mode

4·27 Low Voltage Extended Refresh CMOS

20/26 OJ, DGA Enhanced 4-51 Page Mode CMOS 20/26 DJ, DGA EnhanCed

4·51 Page Mode Low Power Military 20 HR, JDB, CMOS

8-65 Hl,SV Enhanced

Page Mode CMOS

20/26 DGA,DJ Enhanced Page Mode 4-51 Low Voltage CMOS Enhanced 20/26 DGA, DJ Page Mode low Voltage 4·51

Extended Refresh

40, CMOS

DGE, DZ Enhanced 4·73

40/44 Page Mode

CMOS 40, DGE, DZ Enhanced

4-73

40/44 Page Mode

Low Power

40, CMOS

40/44 DGE, DZ Enhanced 4·93 Page Mode CMOS

40, DGE, DZ Enhanced 4·93

40/44 Page Mode

Low Power

DRAM (Continued) ORGANIZAnON MAX

ACCESS POWER

DENSITY (WORDS x DEVICE NUMBER SUPPLY

BITS) TIME

(na) M TMS45165-7<l* 70

TMS45165-80* 80 5",10%

TMS45165-10* 100 4096K 256Kx 16

TMS45165P-70* 70

TMS45165P-80* SO 5",10%

TMS45165P-l<l* 100 SMJ4161 00-70 70

16384Kxl SMJ4161OO-SO SO 5",10%

TMS416400-60 60

TMS416400-70 70 5",10%

TMS416400-SO 80 TMS416400P-60 60

TMS416400P-70 70 5",10%

TMS416400P-80 80 SMJ416400-60 60 SMJ4164oo-70 70

SMJ416400-SO 80 5",10%

SMJ416400-10 100

16384K TMS417400-60 60

TMS417400-70 70 5",10%

4096Kx4 TMS417400-SO 80 TMS4174ooP-60 60

TMS417400P-70 70 5., 10%

TMS417400P-80 80 TMS426400-60§ 60

TMS426400-70§ 70 3.3", 10%

TMS426400-80§ 80

TMS426400P-60§ 60

TMS426400P-70§ 70 3.3",10%

TMS426400P-80§ SO tOGA Plastic Thin Smail-Outline-Package (TSOP)

OGE Plastic Surface Mount Thin Smail-Outline Package (TSOP) OJ Plastic Small-Outline J-Lead (SOJ)

OZ Plastic Smail-Outline J-Lead (SOJ)

FNC Smail-Outline Leadless Chip Carrier (Military) (SOLCC)

HKBFlatpack (Military) .

SV Ceramic Zig-Zag Package (ZIP) (MiI~ry)

Selection Guide

MAX POWER DISSIPATION

PINS PACKAGEt NOTES PAGE

ACTIVE STANDBY (mW) (mW)

880 40, CMOS

770 11 OGE,OZ Enhanced 4-115

660 40/44 Page Mode

CMOS 880

770 11 40,

OGE,OZ Enhanced 4-115

660 40/44 Page Mode

Low Power

440 Military

385 11 24/28 FNC, HKB Enhanced 8-85 Page Mode

440 CMOS

385 11 24/26 OGA, OJ Enhanced 4-135

330 Page Mode

440 CMOS

385 11 24/26 OGA, OJ Enhanced 4-135

330 Page Mode

495 Military

440 FNC,

385 11 24/28 HKB,SV Enhanced 8-105

330 Page Mode

605 CMOS

550 11 24/26 OGA, OJ Enhanced 4-135

495 Page Mode

605 CMOS

550 11 24/26 DGA, OJ Enhanced 4-135

495 Page Mode

252 CMOS

216 3.6 24/26 OGA, OJ Enhanced

4-135,

180 Page Mode

LowVo~age CMOS

252 Enhanced

216 3.6 24/26 OGA, OJ Page Mode 4-135

180 LowVo~ge

Low Power

* Advance Information for product under development by TI

§ Product preview documents contain information on products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products without notice.

~TEXAS

INSTRUMENTS

POST OFFICE BOX 1443 • HOUSTON. TEXAS 77001 2-5

Selection Guide

DRAM (Continued)

MAX

ORGANIZATION ACCESS POWER

DENSITY

(WORDS" BITS) DEVICE NUMBER TIME SUPPLY (na) M

TMS427400-60* 60

TMS427400-70* 70 3.3 :010%

TMS427400·60* 80 4096Kx4

TMS427400P-60* 80

TMS427400P·70* 70 3.3:0 10%

TMS427400P·60* 80 TMS416160·60* 60

TMS416160·70* 70 5:010%

TMS416160·60* 80 TMS416160P·60* 60

TMS416160P·70* 70 5:010%

TMS416160P·80* 80 TMS418160·60* 60

TMS418160-70* 70 5:010%

TMS418160-80* 80 TMS418160P·60* 60 16384K

TMS418160P.70* 70 5:010%

TMS418160P-SO* 80 TMS426160·60* 60

1024K" 16 TMS426160-70* 70 3.3:010%

TMS426160-80* 80

TMS426160P·60* 60

TMS426160P·70* 70 3.3:010%

TMS426160P·60* 80

TMS42816o-a@ 60

TMS428160·70* 70 3.3:010%

TMS428160-ao* 80

TMS428160P·6@ 60

TMS428160P.7@ 70 3.3:010%

TMS428160P·80* 80 tOGA PlastiC Thin Small·Outline-Package (TSOP)

OGE Plastic Surface Mount Thin Small·Outline Package (TSOP) OJ Plastic Small·Outline J·Lead (SOJ)

MAX POWER DISSIPATION

ACTIVE PINS PACKAGEt NOTES PAGE

STANDBY (mW) (mW)

360 CMOS

324 3.6 24/26 OGA, OJ Enhanced 4·135

288 Page Mode

Low Voltage CMOS

360 Enhanced

324 3.6 24/26 OGA, OJ Page Mode 4-135

288 Low Voltage

Low Power

495 42, ^CMOS

440 11 OGE,OZ Enhanced 4·163

385 44/50

Page Mode

495 CMOS

440 11 42,

OGE,OZ Enhanced

4·163

385 44/50 Page Mode

Low Power 1045

42, ^CMOS

990 11 OGE,OZ Enhanced 4·163

935 44/50 Page Mode

1045 CMOS

42, Enhanced

990 11

44/50 OGE,OZ

Page Mode 4·163

935 Low Power

324 CMOS

288 3.6 42,

OGE,OZ Enhanced 4-163

252 44/50 Page Mode

Low Voltage CMOS

324 42, Enhanced

288 3.6 OGE,OZ Page Mode 4·163

252 44/50

Low Voltage Low Power

684 CMOS

648 3.6 42,

OGE,OZ Enhanced 4·163

612 44/50 Page Mode

Low Voltage CMOS

684 42, Enhanced

648 3.6 OGE,OZ Page Mode 4·163

612 44/50

Low Voltage Low Power

OZ Plastic Small·Outiine J·Lead (SOJ)

* Product preview documents contain information on products in the formative or design phase of development. Characteristic data and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products without notice.

2·6

-!!1TEXAS

INSTRUMENTS

POST OFFICE sox 1443 • HOUSTON, TEXAS nOO1

DRAM (Continued)

MAX

ORGANIZATION ACCESS POWER

DENSITY (WORDS i< BITS) DEVICE NUMBER TIME SUPPLY (na) (VI

TMS416169-60* 60

TMS416169-70* 70 5",10%

TMS416169-80* 80 TMS416169P-60 * 60

TMS416169P-70* 70 5",10%

TMS416169P-60* 60 TMS418169-60* 60

TMS418169-70* 70 5",10%

TMS418169-80* 80 TMS418169P-60* 60

TMS418169P-70* 70 5",10%

TMS418169P-80* 60 TMS426169-60* 60

16384K 1024K" 16 TMS426169-70* 70 3.3",10%

TMS426169-80* 80

TMS426169P-60* 60

TMS426169P-70* 70 3.3",10%

TMS426169P-80* 80

TMS428169-6o* 60

TMS428169~70* 70 3.3",10%

TMS428169-ao* 80

TMS428169P-6o* 60

TMS426169P-7O* 70 3.3",10%

TMS428169P-8o* 80 TMS464800-5O* 50 TMS464800-6o* 60

3.3",10%

TMS4648OQ-7o* 70 TMS484800-80:J: 80 65536K 8192K,,8

TMS464800P-5O* 50 TMS464800P-6o* 60

TMS464800P-70* 70 3.3",10%

TMS464800P-80* 80

t DGC PlastiC Thin Small-Outline Package (TSOP) 4OO-mll (50-mil pitch) DGE Plastic Surface Mount Thin Small-Outline Package (TSOP) DZ Plastic Small-Outline J-Lead (SOJ)

Selection Guide

MAX POWER DISSIPATION

PINS PACKAOEt NOTES PAOE ACTIVE STANDBY

(mW) (mW)

495 42, CMOS

440 11 DGE,DZ Enhanced 4-191

385 44/50

Page Mode

495 CMOS

440 11 42,

DGE,DZ Enhanced 4-191

385 44/50 Page Mode

Low Power 1045

42, CMOS

990 11 DGE,DZ Enhanced 4-191

935 44/50

Page Mode

1045 CMOS

990 11 42,

DGE,DZ Enhanced 4-191

935 44/50 Page Mode

Low Power

324 CMOS

288 3.6 42,

DGE,DZ Enhanced 4-191

252 44/50 Page Mode

LowVol1age CMOS

324 42, Enhanced

288 3.6 DGE,DZ Page Mocie 4-191

252 44/50 LowVol1age

Low Power

684 CMOS

648 3.6 42,

DGE,DZ Enhanced 4-191

612 44/50 Page Mode

LowVol1age CMOS

684 42, Enhanced

648 3.6 DGE,DZ Page Mode 4-191

612 44/50

Low Voltage Low Power

504 CMOS

432 7.2 32 OZ, Enhanced

4-187

396 DGC Page Mode

360 LowVol1age

CMOS 504

432 DGC, Enhanced

396 7.2 32

DZ Page Mode 4-187

360 Low Voltage

Low Power

* Product preview documents contain information on products in the formative or design phase of development. Characteristic datil and other specifications are design goals. Texas Instruments reserves the right to change or discontinue these products without notice.

~TEXAS

INSTRUMENTS

POST OFFICE BOX 1443 • HOUSTON. TEXAS nOOl 2-7