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STRUCTURAL ORDERING RELATED TO CHEMICAL BONDS IN RANDOM NETWORKS
A. Revesz, S. Wemple, G. Gibbs
To cite this version:
A. Revesz, S. Wemple, G. Gibbs. STRUCTURAL ORDERING RELATED TO CHEMICAL BONDS IN RANDOM NETWORKS. Journal de Physique Colloques, 1981, 42 (C4), pp.C4-217-C4-219.
�10.1051/jphyscol:1981445�. �jpa-00220902�
JOURNAL DE P H Y S I Q U E
CoZZoque C4, suppZ6ment au nOIO, Tome 42, octobre 1981 page c4-217
STRUCTURAL ORDERING RELATED TO CHEMICAL BONDS I N RANDOM NETWORKS
A . G . Revesz, S . H . wemplen and G.V. ~ i b b s * *
COMSAT Labs, CZarksburg, MD, U. S. A.
*
Be22 Labs, Murray H i l l , NJ, U.S.A.x n VPI, BZacksburg, VA, U.S.A.
SYNOPSIS
The s t r u c t u r e o f many n o n c r y s t a l l i n e ( N C ) s o l i d s ( S i , S i 0 2 , e t c . ) is u s u a l l y d e s c r i b e d by c o n t i n u o u s random network
(CRN) models r e s u l t i n g i n r a d i a l d i s t r i b u t i o n f u n c t i o n s (RDF) t o i n t e r p r e t t h e e x p e r i m e n t a l d i f f r a c t i o n d a t a . These models g i v e mean v a l u e s o f t h e i n t e r a t o m i c d i s t a n c e s w i t h a g i v e n s c a t t e r up t o a b o u t t h e f o u r t h neighbor b u t do n o t p r o v i d e i n f o r m a t i o n on bonding between atoms a s , f o r i n s t a n c e , t h e e x t e n t o f bond d e l o c a l i z a t i o n ; a l s o , t h e y do n o t c o n s i d e r pos- s i b l e c o r r e l a t i o n s between bond a n g l e s and l e n g t h s s i n c e t h e s e p a r a m e t e r s a r e t r e a t e d a s random v a r i a b l e s . Furthermore, t h e CRN models do n o t g i v e any i n s i g h t i n t o t h e n a t u r e o f l o c a l o r d e r e d r e g i o n s which may b e hidden i n t h e s t r u c t u r e which, from t h e viewpoint of d i f f r a c t i o n a n a l y s i s , may a p p e a r a s random. These t h r e e a s p e c t s o f NC s o l i d s , i . e . , bonding, c o r r e l a t i o n s , and l o c a l i z e d o r d e r , a r e d i s c u s s e d i n t h i s paper.
The inadequacy of t h e RDFs t o d e s c r i b e
all
f e a t u r e s o f NC s o l i d s i s i l l u s t r a t e d by t h e o p t i c a l p r o p e r t i e s o f NC S i 0 2 and S i : f o r S i 0 2 t h e r e i s a l m o s t no d i f f e r e n c e between t h e c r y s - t a l l i n e ( C ) and NC forms, whereas t h e d i f f e r e n c e i s g r e a t i n t h e c a s e o f S i , even though t h e RDFs o f b o t h amorphous ( a ) S i and v i t r e o u s ( v ) S i 0 2 c l o s e l y resemble t h e c o r r e s p o n d i n g c r y s t a l s ( t r i d y m i t e and f c c S i , r e s p e c t i v e l y ) . The d i f f e r e n c e between v-Si02 and a - S i i s shown by t h e v a l u e s o f t h e s h o r t - range-order (SRO) parameter, F; 1 f o r v-SiO? ( h i g h l y d e l o c a l - i z e d bonding, d a n g l i n g bonds < 1 0 l ~ c m - ~ ) a n d 0.6-0.8 f o r a - S i(reduced d e l o c a l i z a t i o n o f bonding e l e c t r o n s , d a n g l i n g bonds:
-1019-1021cm-3). The parameter F i s d e f i n e d a s F z f ( N C ) / f ( C ) where f i s t h e normalized o s c i l l a t o r s t r e n g t h used i n t h e a n a l y s i s of o p t i c a l d i e l e c t r i c p r o p e r t i e s o f s o l i d s . Another i m p o r t a n t parameter i n t h i s a n a l y s i s i s t h e s i n g l e a v e r a g e e x c i t a t i o n energy Eo; b o t h f and Eo can be d e r i v e d from t h e
Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1981445
C4-218 JOURNAL DE PHYSIQUE
frequency dependence o f t h e imaginary component of t h e o p t i c a l d i e l e c t r i c c o n s t a n t . Those NC s o l i d s whose F v a l u e i s c l o s e t o 1 a r e l a b e l e d v i t r e o u s , (e.9. S i 0 2 , Ta205, As2S3) and t h o s e w i t h F v a l u e s s i g n i f i c a n t l y l e s s t h a n 1, amorphous (e.g. S i , Ge, A s ) ; t h e b o r d e r i s n o t s h a r p l y d e f i n e d . Hydrogenated a - S i , o r r a t h e r , Sil-xHx, r e p r e s e n t s an i n t e r e s t i n g c a s e a s t h e i n - c o r p o r a t i o n o f H a f f e c t s b o t h t h e f and Eo v a l u e s o f t h e S i network ( t h e c o n t r i b u t i o n o f Si-H bonds i s r a t h e r s m a l l a s t h e f r a c t i o n o f Si-H bonds i s u s u a l l y l e s s t h a n -0.15 and t h e e x c i t a t i o n energy of t h e Si-H bond, 1 1 . 4 eV, i s much h i g h e r t h a n t h a t of S i - S i bonds, 4.3 eV). With i n c r e a s i n g d e p o s i t i o n t e m p e r a t u r e and/or i n c r e a s i n g H-content F may r e a c h even u n i t y , i n d i c a t i n g i n c r e a s e d d e l o c a l i z a t i o n of bonding e l e c t r o n s ; f o r t h i s r e a s o n t h i s m a t e r i a l i s c o n s i d e r e d a s q u a s i - v i t r e o u s . The v a l u e of Eo c h a r a c t e r i z i n g t h e S i network i n c r e a s e s from 3.4 eV a t 0% H t o - 4 . 2 eV f o r -30 a t . % H ; t h e former v a l u e i s p r a c t i c a l l y i d e n t i c a l w i t h E o f CVD a - S i and w i t h t h e e s t i -
0
mated v a l u e o f t h e bcc polymorph o f S i . T h i s s i m i l a r i t y sug- g e s t s t h a t some l o c a l c o n f i g u r a t i o n s i n CVD a-Si and Sil-xHx may resemble bcc-Si i n which t h e chemical bonding of S i atoms c a n n o t b e d e s c r i b e d by s p 3 h y b r i d i z a t i o n a s i n t h e f c c - S i , r a t h e r , d - o r b i t a l s a r e involved.
I f t h e d e n s i t y o f broken ( d a n g l i n g ) bonds i s r e a s o n a b l y s m a l l , t h e n t h e bonds may n o t o n l y b e l a r g e l y d e l o c a l i z e d b u t t h e y may a f f e c t t h e bond l e n g t h s and a n g l e s a s w e l l s i n c e t h e i r v a l u e s a r e determined by t h e a c t u a l l o c a l h y b r i d i z a t i o n s t a t e . A s a r e s u l t , t h e bond a n g l e s and l e n g t h s a r e c o r r e - l a t e d r a t h e r t h a n random. T h i s p o i n t i s i l l u s t r a t e d by v-Si02 where t h e Si-0-Si bond a n g l e , $, and Si-0 bond l e n g t h , r ( S i - O ) , a r e c o r r e l a t e d : a s $ v a r i e s from 120° t o 180° ( t h e r a n g e i n v-Si02) r ( S i - 0 ) v a r i e s from 0.156 t o 0.165 nm. I n c o n t r a s t , t h e r a n g e i n t h e CRN model i s 0.145-0.175 nm. Another a s p e c t o f non-randomness i s t h e d i s t r i b u t i o n of t o r s i o n a l a n g l e , 8 , by which two S i O 4 l 2 t e t r a h e d r a a r e r o t a t e d ( a t $ = c o n s t . ) w i t h r e s p e c t t o each o t h e r . T h i s a n g l e i s c o n s i d e r e d t o be r a n - domly d i s t r i b u t e d i n t h e CRN model. However, i f t h e
+
d i s -t r i b u t i o n i s c a l c u l a t e d on t h i s b a s i s , t h e d i s t r i b u t i o n i s u n r e a l i s t i c a s t h e s i g $ t e r m i n t h e i n t e g r a l used i n t h e c a l - c u l a t i o n f ( $ ) = / E ( $ ) s i n $ d $ overemphasizes t h e r a n g e $ < - 1 5 0 ° . A r e a l i s t i c d i s t r i b u t i o n i s o b t a i n e d i f t h i s term is o m i t t e d , i . e . , t h e d i s t r i b u t i o n i s c o n s i d e r e d a s non-random and d e t e r - mined s o l e l y by t h e energy term. The dependence of energy on
$ has been determined by MO c a l c u l a t i o n s on p y r o s i l i c i c a c i d ,
(HO) 3SiOSi (OH) 3 ; t h e energy v a r i e s o n l y
-
2 k c a l mole-l above and below t h e minimum a t $=140° a s $ v a r i e s from 120' t o 180°.The s m a l l v a r i a t i o n i n energy w i t h $ and t h e c o r r e l a t e d n a t u r e of r ( S i - 0 ) and $ make i t p o s s i b l e t h a t o r d e r e d r e g i o n s may o c c u r l o c a l l y i n v-Si02. T r a n s p o r t p r o p e r t i e s , r a t h e r t h a n X-ray o r e l e c t r o n d i f f r a c t i o n , a r e s e n s i t i v e i n d i c a t o r s of such r e g i o n s . For example, t h e s e p a r a t i o n of s o l u b i l i t y s i t e s f o r O2 molecules i n v-Si02 i s - 2 . 2 nm, i f t h i s d i s t a n c e i s covered by a s i n g l e jump d u r i n g t h e d i f f u s i o n o f 0 2 , t h e n t h e d i f f u s i o n probably o c c u r s a l o n g c h a n n e l s whose s t r u c t u r e c o r r e s p o n d s t o t h e atomic arrangement a l o n g t h e C-axis i n t r i d y m i t e c r y s t a l . The f o r m a t i o n o f v-Si02 f i l m on S i sub- s t r a t e d u r i n g t h e r m a l o x i d a t i o n o c c u r s v i a O 2 d i f f u s i o n , and t h e growth p r o c e s s can b e a n a l y z e d i n terms o f o r d e r i n g and d i s o r d e r i n g e f f e c t s t a k i n g p l a c e i n t h e o x i d e f i l m and a t t h e S i / S i 0 2 i n t e r f a c e . The o r d e r i n g e f f e c t i n t h e v-Si02 f i l m i s t h e growth and/or i n c r e a s e d alignment ( p e r p e n d i c u l a r l y t o t h e S i s u b s t r a t e ) o f c h a n n e l s a s t h e growth r a t e d e c r e a s e s w i t h i n c r e a s i n g o x i d e t h i c k n e s s ) , r e s u l t i n g i n i n c r e a s e d 02 d i f - f u s i v i t y . D i s o r d e r i n g i s due t o t h e l i m i t e d b u t n o n - n e g l i g i b l e i n t e r a c t i o n between 02 and S i 0 2 which scrambles t h e s t r u c t u r e and, hence, d e c r e a s e s t h e 02 d i f f u s i v i t y ; t h i s p r o c e s s o c c u r s when new o x i d e grows on t h e t o p of a w e l l - o r d e r e d f i l m . Thus, t h e s t r u c t u r e o f v-Si02 on S i and 02 d i f f u s i o n a r e i n t i m a t e l y i n t e r - r e l a t e d and 02 d i f f u s i o n i n v-Si02 f i l m s c a n n o t be d i s - c u s s e d i n terms of a r i g i d r e f e r e n c e framework a s i t i s u s u a l l y done i n t h e c a s e o f c r y s t a l l i n e s o l i d s .