HAL Id: jpa-00215337
https://hal.archives-ouvertes.fr/jpa-00215337
Submitted on 1 Jan 1973
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THE MEASUREMENT OF ELECTRON DIFFUSION LENGTHS IN GaAs
J. Gowers
To cite this version:
J. Gowers. THE MEASUREMENT OF ELECTRON DIFFUSION LENGTHS IN GaAs. Journal de
Physique Colloques, 1973, 34 (C6), pp.C6-65-C6-65. �10.1051/jphyscol:1973616�. �jpa-00215337�
JOURNAL DE PHYSIQUE
Colloque C6, suppl6ment au no 1 1-12, Tome 34, Novembre-Dtcembre 1973, page C6-65
THE MEASUREMENT OF ELECTRON DIFFUSION LENGTHS IN GaAs
J. P. GOWERS
Mullard Research Laboratories, Redhill, Surrey, England
Abstract. - The performance of reflection-mode semiconductor photocathodes is governed by two variables, the escape probability P and the electron diffusion length
L.The measurement of L is therefore important and for p-GaAs two methods are described, one involves an analysis of the yield curve, the other utilizes Hackett's (1971) method.
The results obtained are compared and discussed in terms of the doping profile near the surface.
The diffusion length and hole mobility are used to calculate the minority carrier lifetime
ras a function of hole concentration. The variation of
zis in qualitative agreement with a simple model of recombination through unionized acceptors.
HACKETT,
W.
H., J. AppI. Phys. 42 (1971) 3249.Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1973616
