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Submitted on 1 Jan 1975

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BRIDGMAN GROWTH OF AgGaS2 WITH IMPROVED OPTICAL PROPERTIES

H. Matthes, R. Viehmann, N. Marschall, P. Korczak

To cite this version:

H. Matthes, R. Viehmann, N. Marschall, P. Korczak. BRIDGMAN GROWTH OF AgGaS2 WITH IMPROVED OPTICAL PROPERTIES. Journal de Physique Colloques, 1975, 36 (C3), pp.C3-105- C3-108. �10.1051/jphyscol:1975320�. �jpa-00216290�

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JOURNAL DE PHYSIQUE Colloque C3, suppliment au no 9, Tome 36, Septembre 1975, page C3-105

BRIDGMAN GROWTH OF AgGaS, WITH IMPROVED OPTICAL PROPERTIES (*)

H. MATTHES, R. VIEHMANN, N. MARSCHALL and P. KORCZAK AEG-Telefunken Forschungsinstitut FrankfurtIMain, Germany

Resumb. - Le sulfite ternaire AgGaS2 est d'un inter& spkial pour les utilisations optiques non lineaires. Cependant, les monocristaux d'une qualite optique elevee et de grandes dimensions nVtaient pas disponibles jusqu'a present. C'est pourquoi la fabrication de ce genre de mono- cristaux a fait I'objet du present exarnen. La methode Bridgman a permis d'obtenir des khantillons suffisamment grands (5 X 5 X 5 mm3) exempts de Glures, d'inclusions et de macles a p r b avoir optimise la composition du bain, le profil de temperature du four et la geometrie des ampoules.

Gr2ce A une malleabilisation ulttieure, I'absorption a pu etre reduite a des valeurs a < 0,l cm-l dans la partie essentielle de la zone de transmission.

Abstract. - The ternary sulfide AgGaS2 is of special interest for nonlinear optical applications.

Single crystals of high optical quality and large size, however, were not available. Therefore we investigated the growth process to obtain such crystals. Using the Bridgman technique by optimizing composition of the melt, temperature profile and geometry of the quartz ampoule it was possible to get sufficiently large (5 X 5 X 5 mm,) samples free of cracks, voids and lamellar twins. By a subsequent annealing process, absorption could be reduced to a < 0.1 cm-' for the most important part of the transmission range.

1. Introduction. - Tunable infrared laser sources in the spectral range between about 2 and 10 pm are of great interest for detecting pollutant gases by optical methods. A very promising laser source might be an optical parametric oscillator, pumped by a conve- nient Nd : Y A G laser. The main part of the oscillator is a nonlinear optical crystal, which allows transfor- mation of the constant pump frequency to tunable emission a t lower frequencies. For this application crystals from the group of ternary I-111-V12 semi- conductors are of special interest [l].

AgGaS, is very promising for use in such an optical parametric oscillator by reasons of high nonlinear coefficients, sufficiently high optical birefringence for phasematching and its transparency ranging from 0.5 t o about 12 pm [2, 31. T h e phasematching range of AgGaS, allows pumping of thc oscillator by a Nd : YAG laser (/I = 1.06 pm), in order t o obtain tunable emission in the range of about 2 to 10 pm.

Howcver, single crystals of AgGaS, of the desired high optical quality and sufficiently extended size of twin free cubes were not available until now. Problems in growing AgGaS, crystals by the Rridgman-Stock- barger technique were :

1. pronounced tendency of lamellar twin formation during crystallization [4].

2. too high an optical absorption with absorption coefficient cr > 1 cm-' in the whole transparency

(*) Work supported by the Ministry of Research and Techno- logy of the Federal Republic of Gcrmany as part of its technology program.

range (0.5-12 pm) [3, 51. The upper limit for the spe- cial application of a parametric oscillator is estimated to be about a = 0.1 cm-' in the wavelength range of infrared emission [3].

We tried first the liquid encapsulation Czochralski technique a s a different growth method [6] to over- come these difficulties. The resulting crystals, however, showed n o significant improvement. Therefore we again used the Bridgman technique t o obtain the desired crystal properties. Growing performance a n d results are reported in t h e following.

2. Crystal growth conditions. - The polycrystalline AgGaS, for Bridgman growth was synthesized by a pre-melting procedure. Due to the requirement of high crystal transparency the starting material should be of highest purity. Because of the high vapor pressure of sulphur when starting with elemental components it was necessary to synthesize AgGaS, from the binary sulphides Ag2S and Ga,S,. T h e binary components, however, were available only in 4-N t o 5-N grade compared t o 6-N quality of the elements. The starting composition was chosen stoi- chiometric a n d in several deviating ratios. For syn- thesis double-walled quartz ampoules were used in order to prevent oxidation of the compound which can occur by fracture of the internal ampoule during cooling. The ampoules were degreased with acetone, etched in a mixture of H F and HNO, in a ratio 1 : 1, and then baked a t 1 000 OC for 24 hours in vacuum.

They were filled with the sulphide mixtures in charges of 60 g, evacuated t o 10-5 torr and sealed. The binary

Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1975320

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C3-106 H. MATTHES, R. VIEHMANN, N. MARSCHALL A N D P. KOliCZAK

sulphides were brought to reaction by heating to 1 020°-1 050°C held for 3-5 days. For Bridgman growth the resulting reaction product was crushed, dried and again placed in a double walled ampoule with a conical bottom (cone angle 30°). After evacuat- ing to 10-S torr and filling with argon gas to 0.5 atm the ampoule was sealed and positioned into the top zone of the Bridgman furnace. It consists of a vertical 4-zone furnace with separately controlled heat zones, providing a long term stability better than 5 0.5 OC.

The complete Bridgman apparatus is shown in figure 1. Separation of the upper and lower zone pairs

Lowering Rod Cover

Heating Element 1. Zone

Insulation Ampoule Holder 2. Zone

Ampoule

Air Gap (variable)

3. Zone

4. Zone

Ceramic Tube Cover PLummet

FIG. 1. - Bridgman furnace with temperature profile for the growth of AgGaS2.

by a variable air gap allows a steeper temperature gra- dient. The maximum value of this set-up was 55 oC/cm in the furnace, which resulted in 40 OC/cm within the ampoule. The temperature plateaus above and below this gradient were 1 050 OC and 840 OC. The ampoules were lowered through the gradient at a speed of 4-6 mm per day. Crystals were cooled down to room- temperature at a rate less than 100 OC/h.

3. Results and discussion. - 3 . 1 LAMELLAR TWINS.

- Independent of the starting compositions the occurrence of twin lamellae in the resulting single crystals was observed. Figure 2a shows an example of such twin lamellae, which give regular interference structures in transmitted polarized light. Twin density, however, was not uniformly distributed throughout the whole cross section of the boule. Lamellae prefe- rably started from the outer crystal surface. Termina- tion towards the centre was observed. Figure 2b shows stopping of one lamclla by running into an other one. In addition lamellae tcrmination occurred merely by reducing thickness. From this latter observa- tion it was concluded, that by increasing the ampoule diameter, twin free regions should be available from

FIG. 2. - Lamellar twins in AgGaS2. U ) Regular interference structure in twin lamellae. h) Termination of a twin.

the centre of the boule. This expectation was verified experimentally. Ampoule diameters of about 2.5 cm gave twin free regions in the inner part of the boule with sizcs of about 5 X 5 X 5 mm3.

3 . 2 OI'TICAL. TRANSMISSION. - 3 . 2 . 1 As-grown

material. - Single crystals grown by the technique described above gave different macroscopic appea- rances depending on the composition of the starting material. An exactly stoichiometric composition resulted in uniformly milky yellow boules. Absorption in the infrared region was rather high and comparable to earlier published data [3, 51.

Nonstoichiometric starting compositions with an excess of Ag2S between 1 and 2 m01 O/, gave crystals with improved appearance. Beside a milky yellow first region, we found an extended transparent one limited by a dark green terminating part.

Optical transmission measurements of samples cut from the transparent region, gave very low absorption coefficients in the whole transparency range, as shown in figure 3 in comparison to samples from the milky scattering region. At short wavelengths between 0.5 pm and 1.6 pm the absorption coefficient U is below the maximum desired value of 0.1 cm-' for

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BRJDGMAN GROWTH OF AgGaSt WITH IMPROVED OPTICAL PROPEKTIES C3-107

Wavelength ( pm - c

FIG. 3. - Room-temperature absorption coefficient (cm-1) vs wavelength (pm) for AgGaSt grown from starting composition with 52 mol O/, Ag2S. Dashcd line : sample from milky scat- tering region. Solid line : sample from transparent region.

parametric oscillation. Between 2 and 6 pm, however, a broadband residual absorption remained with a maximum of about 0.3 cm-'.

Microscopic investigations of the transitions bet-

revealed the existence of included phases different from the surrounding material, as shown in figure 4a and 46. Investigation by electron microprobe gave high metal content (Ag and Ga) for the bright inclu- sions in figure 4a (milkyltransparent transition) compared to the surrounding transparent matrix.

F o r the dark inclusions in figure 46 (transition trans- parentldark-terminating-part), a n eutectic with high excess of Ag compared to Ga was found. Electron microprobe data for metal content revealed, that the transparent region of the boule is characterizable by a higher sulphur content compared t o the yellow milky scattering region.

3 . 2 . 2 Annealed material. - In order to reduce broadband absorption between 2 a n d 6 pm, we tried to increase sulphur content by additional annealing.

F o r such experiments milky scattering samples were taken from boules grown with a n excess of 2 m01 %

Ag,S in the starting composition. Samples with addi- tional elementary sulphur in evacuated ampoules were annealed a t 750 OC for 120 hours. The visible effect of improved transparency is illustrated in figure 5 by two ween milky/transparent and transparentldark regions

FIG. 5. - AgGaS2 cubes before and after annealing with

additional sulphur.

0 4 06 O B l O 15 2 3 C 6 8 10 15

Wavelength I pm )

--

FIG. 6. - Room-temwraturc absorvtion coefficient (cm-1) ~ \ ,

( b ) vs wavelength (pm) f i r AgGaS2 groin from starting composi-

tion with 52 m01 % AgzS. Dashcd line : milky as-grown sample.

FIG. 4. - Foreign phases in AgGaS2. a ) Transition milky/ Dotted and dash-dotted line : after annealing with additional transparent. b) Transition transparentldark. AgzS. Solid line : after annealing with additional sulphur.

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C3-108 H. MATT'HES, R. VIEHMANN, N. MARSCHALL AND P. KORCZAK

samples. The smaller cube on the left shows the milky scattering material before annealing, whereas the one on the right shows the clear appearence after annealing.

The greatly improved transparency, caused by annealing, is shown quantitatively in figure 6. Absorp- tion is reduced below 0.1 cm-' in the range 0.9- 8.5 pm, the most important range for parametric oscillator application of AgGaS,. The origin of this effect has not yet been investigated in detail. To ensure,

that improved transparency is not produced by heat effects alone, corresponding annealing in vacuum was carried out without additional sulphur. No significant changes in transparency could be observed. A partial improvement for short wavelengths was also found by annealing with additional Ag,S (96 hours at 7500 and 900 OC) as shown in figure 6 (dotted line for 750 OC, dash-dotted line for 900OC). A residual absorption in the range 2-6 pm, however, still remained.

References

[l] CHEDZEY, H. A., MARSHALL, D. J., PARFITT, H . T. and 141 KUPECEK, P. J., SCHWARTZ, C. A. and CHEMLA, D. S., ZEEE ROBERTSON, D. S., J. Phys. D 4 (1971) 1320. J . Quantum Electron. QE-10 (1974) 540.

[2] CHEMLA, D. S., KUPECEK, P. J., RODERTSON, D. S. and [5] BHAR, G. C. and SMITH, R. C., IEEE J. Quar~tuttr Electron.

SMITH, R. C., Opt. CUIIIIIIM. 3 (1971) 29. Q E l O (1974) 546.

[3] B ~ Y D , G. D., KASPER, H. and MCFEE, J. H., IEEE J. Quan- [6] KORCZAK, P. and STAFF, C. B., J. Cryst. Growth 24/25 (1974)

turn Electron. QE-7 (1971) 563. 386.

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