56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs

This power dis- sipation is relatively independent of gate drive as long as the gate-source voltage exceeds the threshold voltage by several volts and an elaborate drive circuit

Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains

Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains

Included PWM controller features integrated fixed oscil- lator, under voltage lock out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shutdown protection and

All of these power MOSFETs are designed for applications such as switching regulators, switching conver- tors, motor drivers, relay drivers, and drivers for high power bipolar

Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains

PRINT SET NO.. BLOWtR HOUSING SECURING HARDWARE ~O BE REMOVFD BEFORE OPERATING UNIT.. UNLESS OTHE:RWISE SPECIFIED DIMENSIOtG ARE IN INCHES ANGLU _ Cl.ASSOF .... Idl

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