2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features

November 1995

2N7000 / 2N7002 / NDS7002A

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

___________________________________________________________________________________________

Absolute Maximum Ratings

Symbol Parameter 2N7000 2N7002 NDS7002A Units

VDSS Drain-Source Voltage 60 V

V_DGR Drain-Gate Voltage (R_GS < 1 MΩ^{) 60 V}

V_GSS Gate-Source Voltage - Continuous ±20 V

- Non Repetitive (tp < 50µs) ±⁴⁰

I_D Maximum Drain Current - Continuous 200 115 280 mA

- Pulsed 500 800 1500

P_D Maximum Power Dissipation 400 200 300 mW

Derated above 25^oC 3.2 1.6 2.4 mW/°C

TJ,TSTG Operating and Storage Temperature Range -55 to 150 -65 to 150 °C

TL Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds

300 °C

THERMAL CHARACTERISTICS

R_θJA Thermal Resistance, Junction-to-Ambient 312.5 625 417 °C/W

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

High density cell design for low R_DS(ON). Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

S D

G GS

D

TO-92 2N7000

(TO-236AB) 2N7002/NDS7002A

Electrical Characteristics

Symbol Parameter Conditions Type Min Typ Max Units

OFF CHARACTERISTICS

BV_DSS Drain-Source Breakdown Voltage V_GS = 0 V, I_D= 10 µA All 60 V

I_DSS Zero Gate Voltage Drain Current V_DS = 48 V, V_GS= 0 V 2N7000 1 µA

T_J=125°C 1 mA

VDS = 60 V, VGS= 0 V ^2N7002 NDS7002A

1 µA

T_J=125°C 0.5 mA

I_GSSF Gate - Body Leakage, Forward V_GS = 15 V, V_DS = 0 V 2N7000 10 nA

V_GS = 20 V, V_DS = 0 V 2N7002 NDS7002A

100 nA

I_GSSR Gate - Body Leakage, Reverse V_GS = -15 V, V_DS = 0 V 2N7000 -10 nA

V_GS = -20 V, V_DS = 0 V 2N7002 NDS7002A

-100 nA

ON CHARACTERISTICS (Note 1)

V_GS(th) Gate Threshold Voltage V_DS= V_GS, I_D= 1 mA ^2N7000 0.8 2.1 3 V

V_DS= V_GS, I_D= 250 µA 2N7002 NDS7002A

1 2.1 2.5

R_DS(ON) Static Drain-Source On-Resistance V_GS = 10 V, I_D = 500 mA 2N7000 1.2 5 Ω

TJ =125°C 1.9 9

V_GS = 4.5 V, I_D = 75 mA 1.8 5.3

V_GS = 10 V, I_D = 500 mA 2N7002 1.2 7.5

T_J =100°C 1.7 13.5

V_GS = 5.0 V, I_D = 50 mA 1.7 7.5

TJ =100C 2.4 13.5

V_GS = 10 V, I_D = 500 mA NDS7002A 1.2 2

T_J =125°C 2 3.5

VGS = 5.0 V, ID = 50 mA 1.7 3

T_J =125°C 2.8 5

VDS(ON) Drain-Source On-Voltage VGS = 10 V, ID = 500 mA 2N7000 0.6 2.5 V

V_GS = 4.5 V, I_D = 75 mA 0.14 0.4

V_GS = 10 V, I_D = 500mA 2N7002 0.6 3.75

V_GS = 5.0 V, I_D = 50 mA 0.09 1.5

V_GS = 10 V, I_D = 500mA NDS7002A 0.6 1

VGS = 5.0 V, ID = 50 mA 0.09 0.15

Electrical Characteristics

Symbol Parameter Conditions Type Min Typ Max Units

ON CHARACTERISTICS Continued(Note 1)

I_D(ON) On-State Drain Current V_GS = 4.5 V, V_DS = 10 V 2N7000 75 600 mA

VGS = 10 V, VDS > 2 VDS(on) 2N7002 500 2700 V_GS = 10 V, V_DS > 2 V_DS(on) NDS7002A 500 2700

gFS Forward Transconductance VDS = 10 V, ID = 200 mA ^2N7000 100 320 mS

V_DS > 2 V_DS(on), I_D = 200 mA 2N7002 80 320 V_DS > 2 V_DS(on), I_D = 200 mA NDS7002A 80 320 DYNAMIC CHARACTERISTICS

C_iss Input Capacitance V_DS = 25 V, V_GS = 0 V, f = 1.0 MHz

All 20 50 pF

Coss Output Capacitance ^All 11 25 pF

C_rss Reverse Transfer Capacitance All 4 5 pF

t_on Turn-On Time VDD = 15 V, RL = 25 Ω^, ID = 500 mA, VGS = 10 V, RGEN = 25

2N7000 10 ns

V_DD = 30 V, R_L = 150 Ω^, I_D = 200 mA, V_GS = 10 V, RGEN = 25 Ω

2N700 NDS7002A

20

t_off Turn-Off Time V_DD = 15 V, R_L = 25 Ω^, I_D = 500 mA, V_GS = 10 V, R_GEN = 25

2N7000 10 ns

V_DD = 30 V, R_L = 150 Ω^, I_D = 200 mA, V_GS = 10 V, R_GEN = 25 Ω

2N700 NDS7002A

20

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I_S Maximum Continuous Drain-Source Diode Forward Current 2N7002 115 mA

NDS7002A 280

I_SM Maximum Pulsed Drain-Source Diode Forward Current 2N7002 0.8 A

NDS7002A 1.5

V_SD Drain-Source Diode Forward Voltage

V_GS = 0 V, I_S= 115 mA (Note 1) 2N7002 0.88 1.5 V V_GS = 0 V, I_S= 400 mA (Note 1) NDS7002A 0.88 1.2

Note:

1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

0 1 2 3 4 5 0

0 .5 1 1 .5 2

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

9.0

4.0 8.0

3.0 7.0

V = 10VGS

DS

D

5.0 6.0

-5 0 -2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0

0 .5 0 .75 1 1 .25 1 .5 1 .75 2

T , JUNCTION T EMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J R , NORMALIZEDDS(ON)

V = 10V_GS I = 500m AD

-50 -25 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0

0 .8 0 .8 5 0 .9 0 .9 5 1 1 .0 5 1 .1

T , JUNCTION TEM PERA T U RE (°C)

GATE-SOURCE THRESHOLD VOLTAGE

J

I = 1 m AD V = V_{DS GS}

V , NORMALIZEDth

0 0 .4 0 .8 1 .2 1 .6 2

0 .5 1 1 .5 2 2 .5 3

I , DRA IN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V =4.0V _GS

D R , NORMALIZEDDS(on)

7 .0 4 .5

1 0 5 .0

6 .0

9 .0 8 .0

0 0 .4 0 .8 1 .2 1 .6 2

0 0 .5 1 1 .5 2 2 .5 3

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

T = 1 2 5 ° CJ

2 5 ° C

-55°C

D V = 10V _GS

R , NORMALIZEDDS(on)

Typical Electrical Characteristics

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current

Figure 3. On-Resistance Variation with Temperature

Figure 4. On-Resistance Variation with Drain Current and Temperature

Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature

0 2 4 6 8 10

0 0.4 0.8 1.2 1.6 2

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

V = 1 0 V_DS

GS

D

T = -55°CJ 2 5 ° C 1 2 5 ° C

2N7000 / 2N7002 / NDS7002A

-50 -25 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0.925

0.95 0.975 1 1.025 1.05 1.075 1.1

T , JUNCTION TEM PERATURE (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE

J BV , NORMALIZEDDSS

I = 250µA_D

0 .2 0 .4 0 .6 0 .8 1 1 .2 1 .4

0 .0 0 1 0 .0 0 5 0 .0 1 0 .0 5 0 .1 0 .5 1 2

V , BODY DIODE FORW A RD VOLTAGE (V)

I , REVERSE DRAIN CURRENT (A)

V = 0 VGS

T = 1 2 5 ° CJ

SD

S

2 5 ° C

-5 5 ° C

0 0 .4 0 .8 1 .2 1 .6 2

0 2 4 6 8 1 0

Q , GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

g

GS

I = 5 0 0 m A_D V = 2 5 VDS

1 1 5 m A 2 8 0 m A

1 2 3 5 1 0 2 0 3 0 5 0

1 2 5 1 0 2 0 4 0 6 0

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

DS

C iss

f = 1 M H z V = 0VGS

C oss

C rss

G D

S

V_DD

R_L V

V

IN

OUT

V_GS

R_GEN DUT

10%

50%

90%

10%

90%

90%

Input, Vin 50%

Output, Vout

t_on t_off

td(off) tf

tr

td(on)

Inverted

10%

Pulse Width Figure 7. Breakdown Voltage Variation

with Temperature

Figure 8. Body Diode Forward Voltage Variation with

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

Figure 11. Figure 12. Switching Waveforms

Typical Electrical Characteristics

2N7000 / 2N7002 /NDS7002A

0.001 0.002 0.01 0.05 0.1 0.2 0.5 1

TRANSIENT THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE

Single Pulse D = 0.5

0.1 0 .0 5

0 .0 2 0 .0 1 0 .2

Duty Cycle, D = t /t1 2

R (t) = r(t) * R R = (See Datasheet) θJA θJA

θJA

T - T = P * R (t)J A θJA P(pk)

t 1 t 2

0.0001 0.001 0.01 0.1 1 10 100 300

0.01 0.02 0.05 0.1 0.2 0.5 1

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE

1 Single Pulse

D = 0 .5

0.1 0.05

0 .02 0.01

0 .2

Duty Cycle, D = t /t1 2

R (t) = r(t) * R R = (See Datasheet) θJA θJA

θJA

T - T = P * R (t)J A θJA P(pk)

t 1 t 2

1 2 5 1 0 2 0 3 0 6 0 8 0

0.005 0.01 0.05 0.1 0.5 1 2 3

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

DS

D

V = 10V SINGLE PULSE

T = 25°C GS

A RDS(ON) Li

mit

100 ms

1 ms 10ms

DC 1s

100us

10s

Figure 16. TO-92, 2N7000 Transient Thermal Response Curve

1 2 5 1 0 2 0 3 0 6 0 8 0

0.005 0.01 0.05 0.1 0.5 1 2 3

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

DS

D

V = 10V SINGLE PULSE

T = 25°C GS

A RDS(ON) Li mit

100 ms

1 ms

10ms

DC 1s 10s

100us

1 2 5 1 0 2 0 3 0 6 0 8 0

0.005 0.01 0.05 0.1 0.5 1 2 3

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

DS

D V = 10V

SINGLE PULSE T = 25°C

GS

A RDS(ON) Li

mit

100 ms

1 ms

10ms

DC 101 ss

100us

Figure 13. 2N7000 Maximum Safe Operating Area

Figure 14. 2N7002 Maximum Safe Operating Area

Figure 15. NDS7000A Maximum Safe Operating Area

Typical Electrical Characteristics

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Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or In Design

First Production

Full Production

Not In Production DISCLAIMER

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