HAL Id: jpa-00223102
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Submitted on 1 Jan 1983
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LATTICE TEMPERATURE OF GaAs AND Si DURING PULSED LASER ANNEALING
A. Pospieszczyk, M. Abdel Harith, B. Stritzker
To cite this version:
A. Pospieszczyk, M. Abdel Harith, B. Stritzker. LATTICE TEMPERATURE OF GaAs AND Si DURING PULSED LASER ANNEALING. Journal de Physique Colloques, 1983, 44 (C5), pp.C5- 129-C5-129. �10.1051/jphyscol:1983521�. �jpa-00223102�
JOURNAL DE PHYSIQUE
Colloque C5, suppl6ment au nO1O, Tome 44, octobre 1983 page C5-129
LATTICE T E M P E R A T U R E O F GaAs A N D S i DURING P U L S E D LASER ANNEALING
A. Pospieszczyk, M. Abdel Harith and B. s t r i t z k e r * I n s t i t t c t fur PZasmaphysik, A s s o c i a t i o n EURATORM-KFA
* ~ n s t i t u t fiir Festkb.rperforschung, KernforschungsanZage Jiilich, 0-51 70 Jiili.ch, F. R. G.
Abstract - Both GaAs (100) and Si (110) s i n g l e c r y s t a l s were l a s e r annealed with a 20 ns ruby l a s e r pulse. By means of a t i m e - o f - f l i g h t measurement t h e v e l o c i t y d i s t r i b u t i o n and t h e d e n s i t y v a r i a t i o n of evaporated Ga o r As and Si atoms were determined f o r d i f f e r e n t energy d e n s i t i e s . Simultaneously t h e r e f l e c t i v i t y of t h e c r y s t a l s u r f a c e was measured time-resolved. The d a t a show c o n s i s t e n t l y t h a t t h e y o l t e n phase with high r e f l e c t i v i t y occurs a t energy d e n s i t i e s .1- 0.35 J cm- f o r GaAs and r 0 . 8 J c r 2 f o r S i . The r e s u l t s confirm a p u r e l y thermal model f o r l a s e r annealing of semiconductors. In t h e c a s e of GaAs t h e influence of t h e l a t e n t heat during melting could be c l e a r l y resolve(
Since t h i s paper has been published r e c e n t l y / I / , only t h e main f i g u r e i s shown, where t h e l a t t i c e temperature T as derived from t h e time of f l i g h t measurement i s plot3ed versus energy d e n s i t y of t h e l a s e r pulse. T i n c r e a s e s s t e e p l y up t o 0.3 J/cm u n t i l i t reaches about t h e normal melting temperature of GaAs. Then t h e tempe r a t u r e remains a t t h i s value (within t h e s c a t t e r of t h e d a t a ) because t h e l a t e n t heat of fusion has t o be put i n t o t h e GaAs. Only f o r energy d e n s i t i e s above 0.5
~ / c m 2 th e temperature of t h e l i q u i d phase i n c r e a s e s again.
Fig. 1: Temperature of emitted Ga and As atoms versus energy d e n s i t y of t h e 20 ns Ruby l a s e r pulse. Three t y p i c a l e r r o r b a r s a r e shown.
The occasional (shaded region) or permanent ( s o l i d l i n e ) occurrence of t h e h i g h r e f l e c t i v i t y , i . e . l i q u i d phase i s indicated above t h e a b s c i s s a .
. . .
x,,+ O
Ga A s
o oGaOMS1 -
• o As OMS 1
o x A s OMS 2
, V/////////////A , 1
m az a3 O.L 0.5 0.6
Laser Energy Density I J ~ r n - ~
Reference
n / t ) o s p i e s z c z y k A . , Abdel Harith M., S t r i t z k e r B., t o be published i n J . Appl. Phys. June 1983
Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1983521
