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ULTRASONIC ATTENUATION AND VELOCITY IN

Cd0.55 Mn0.45Te+

P. Maheswaranathan, R. Sladek, U. Debska

To cite this version:

P. Maheswaranathan, R. Sladek, U. Debska.

ULTRASONIC ATTENUATION AND

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JOURNAL D E PHYSIQUE

Colloque

CIO,

supplément

au n o

12, Tome

46,

décembre 1985 page CIO-513

ULTRASONIC ATTENUATION AND VELOCITY IN Cd,.,5Mn,.,5Te'

p . MAHESWARANATHAN, R.J. SLADEK AND U. DEBSKA Purdue University, West Lafayette, IN 47907, U.S.A.

Abstract

-

We deduce t h e electromechanical coupling f a c t o r , piezoelectric con-

stant(e14),

and e l e c t r i c a l conductivity of Cdo.55Mno.k5Te from t h e attenua-

t i o n maximum and veloci ty change of piezoelectrical ly-active [ I l 0 1 [O011 u l t r a -

sonic shear waves which occur a s a function of temperature,

T.

Electro-

mechanical coupling and e14 are much l a r g e r in Cdo.55Mno.45Te than in CdTe

due t o l e s s bond charge t r a n s f e r in the former because, we believe, of hybrid-

i z a t i o n of Mn 3d o r b i t a l s i n t o the tetrahedral bonds. The dc r e s i s t i v i t y was

measured and found to be an exponential function of 1/T in accord with the

e l e c t r i c a l conductivi t y deduced from

O u r

ul trasonic data. The conductivi t y

a c t i v a t i o n energy we i d e n t i f y with the ionization energy of centers which

provide mobile charge c a r r i e r s ( h o l e s ) .

1

-

INTRODUCTION

The d i l u t e d magnetic semiconductor CdlmxMnxTe has been t h e subject of extensive

s t u d i e s

/1/

because of i t s important semiconducting, optical and magneto-optic prop-

e r t i e s and the growth of CdTe

-

CdMnTe s u p e r l a t t i c e s by molecular beam epi taxy

/2/.

Ultrasonic velocity measurements on Cdl-,MnxTe have been made down to low tempera-

tures /3/ and as a function of hydrostatic pressure

/4/

i n t h i s laboratory.

In

addition recent ultrasonic attenuation and velocity s t u d i e s on Cdl-xMnxTe by us /5/

have revealed a maximum in t h e attenuation and a concomittant change in velocity as

a function of temperature f o r piezoelectrical l y active ul t r a s o n i c waves because of

d r a s t i c temperature dependence of the e l e c t r i c a l conductivi ty.

In t h i s paper we present 10 MHz f a s t shear wave velocity data not reported prev-

iouslÿ and dc r e s i s t i v i t y data f o r cornparison with t h e e l e c t r i c a l conductivity de-

duced from our ul trasonic resul t s . We analyze these velocity data and Our prev-

iously obtained /5/ 30 MHz attenuation data t o obtain a value f o r the e l e c t r o -

mechanical coupling f a c t o r and suggest an i n t e r p r e t a t i o n of the l a t t e r . The defect/

impurity ionization energy deduced from O u r ultrasonic and dc r e s i s t i v i t y r e s u l t s

are reported and discussed.

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C10-514 JOURNAL

DE

PHYSIQUE

I I

-

EXPERIMENTAL DETAILS

The ultrasonic sample and the experimental d e t a i l s f o r

O u r ultrasonic attenuation

and velocity measurement have been described i n r e f .

5.

A rectangular parallelo-

piped of Cdo.55Mno.45Te was prepared from the ultrasonic sample and i t s dc r e s i s -

t i v i t y was measured by means of a standard four-probe technique.

I I I

-

RESULTS

AND

DISCUSSION

The attenuation of 30 MHz p i e z o e l e c t r i c a l l y a c t i v e ultrasonic waves as a function of

inverse temperature i s shown in Fig. 1 f o r O u r Cdo-55Mno.45Te sample. Use of

1 / T

a s

the abscissa allows one to note t h a t a f t e r the background attenuation i s subtracted

the peak i s symmetric a s would be expected f o r a thermally acti'vated relaxation

process. As will become evident the peak depends on the relaxation of the e l e c t r i c a l

conductivity and t h e a v a i l a b i l i t y of mobile charge c a r r i e r s (holes) t o respond t o the

piezoelectric f i e l d associated with t h e ultrasonic s t r a i n .

I l I 20

-

Cdg.uMn0.4sTe

-

-

30 uiir Cirol Cwil > 1.864 t_

-

COIC. V O , J

---

backqrwnd z W " > E 1.858

a

W W " l-

--

I O u> 1

'

0.5

t- u>

3.0

4.0

5.0

1.852

IOOO/T ( K I 200 250 300

Fig.

1

-

Attenuation of 30 MHz

[ I I 0 1 TEMPERATURE ( K 1

[O011 waves in Cdo.,5Mno-45Te versus

inverse temperature. The sol id

Fig.

2

-

Fast shear velocity of 10 MHz

curve was calculated using the back-

[1101[0011 waves in C d ~ . ~ ~ M n o . ~ ~ T e

versus tem-

ground attenuation given by the

perature. The solid curve was calculated using

dashed line.

unstiffened values oiven

by

the dashed line.

In order t o analyze t h e attenuation maximum and velocity changes (shown in Fig. 2)

we use the theory of Hutson and White /6/ f o r e l a s t i c wave propagation i n piezo-

e l e c t r i c semiconductors. When t h e r e are negligible c a r r i e r diffusion and small con-

ductivity modulation a s a r e t r u e

i n

O u r

case, t h e piezoelectric attenuation

ccpz

and

the velocity of shear waves propagating i n the [Il01 crystallographic direction and

polarized i n the [O011 direction a r e given by /6/

(4)

and eq.(l) w i t h w = UC, we deduce t h a t t h e electromechanical c o u p l i n g f a c t o r e 1 4 2 / ~ C 4 4 has a value o f 0.0049 2 0.0005 f o r Our Cdo. 55Mno.45Te sample.

Fig. 2 shows the v e l o c i t y o f 10 MHz u l t r a s o n i c f a s t shear waves as a f u n c t i o n o f tem- p e r a t u r e f o r Cdo.55Mno.45Te. I t can be seen t h a t t h e r e i s an e x t r a increase i n ve- l o c i t y w i t h decreasing temperature below 250 K. This i s due t o t h e presence o f p i e z o e l e c t r i c f i e l d s which are n o t screened o u t by t h e charge c a r r i e r s . The s t i f f - ened and unstiffened values o f t h e f a s t shear v e l o c i t y shown i n Fig. 2 and eq. (2) gives e 1 4 2 / ~ C 4 4 = 0.0047 i 0.0005. This value i s w i t h i n experimental e r r o r o f t h a t

obtained from t h e 30 MHz a t t e n u a t i o n r e s u l t s shown i n Fig. 1 (see Table 1 ) . The u n s t i f f e n e d values i n F i g . 2 a r e obtained from a l i n e a r e x t r a p o l a t i o n o f t h e f a s t shear v e l o c i t y above 270 K.

Table 1

-

Values o f e142/~C44 deduced f o r Cdo. 55Mno. 45Te f r o m [ I l 0 1 [O011 u l t r s o n i c waves

.

e142/~C44 Frequency Method

0.0049 c 0.0005 30 MHz a t t e n u a t i o n

The dc r e s i s t i v i t y i s shown as a f u n c t i o n o f i n v e r s e temperature i n Fig. 3. Also shown i n F i g . 3 i s t h e c a l c u l a t e d r e s i s t i v i t y u s i n g o u r 10 MHz a t t e n u a t i o n versus temperature r e s u l t s /5/. The agreement i s very good a t a l 1 temperatures except perhaps a t temperatures which a r e w e l l above t h a t o f the peak a t t e n u a t i o n .

From Table 1 i t can be seen t h a t the values o f t h e electromechanical coup- l i n g f a c t o r deduced from v a r i o u s u l t r a - sonic data a r e w i t h i n experimental e r r o r except f o r t h e 10 MHz a t t e n u a t i o n value being somewhat l e s s than t h e o t h e r s . The reason f o r t h e l a t t e r i s 0.0047

+

0.0005 10 MHz v e l o c i t y

a 0 . ~ 0 4 2 I 0.0004 30 MHz v e l o c i t y

a0.0037 MHz attenuation

afrom r e f . 5.

The 0.36 eV c o n d u c t i v i t y a c t i v a t i o n energy o f Our Cdo.55Mno.45Te, which i s p-type, i s s i m i l a r t o t h a t observed i n Cdl-xMnxTe / I O / (0.05 x 0.20) which had been sub- j e c t e d t o annealing i n t h e presence o f Cd, Au, o r Cu. Such values have been a t t r i b - uted t o complexes c o n t a i n i n g r e s i d u a l chemical i m p u r i t i e s and l a t t i c e defects.

n o t known a t present. I n any case t h e e l ectromechanical coupl i ng f a c t o r s shown i n Table 1 f o r Cdo.55Mno,45Te a r e much l a r g e r than t h a t o f CdTe which has a value o f 0.0007 [ r e f . 51 o r 0.0005

[ r e f . 71. The enhanced electromechan- i c a l c o u p l i n g i n Cdo.55Mno.45Te i s due

I V

-

CONCLUSION

t o e l 4 being l a r g e r s i n c e c [ r e f . 81 has n e a r l y t h e same value i n i t as i n CdTe. The l a r g e r value o f e l 4 can be under- stood as f o l lows. According t o M a r t i n /9/

e14 = e;da2

-

eaQ/a 2 ( 3 )

where a i s t h e l a t t i c e parameter, e; i s t h e t r a n s v e r s e macroscopic (Born) e f f e c t i v e charge, 5 i s t h e i n t e r n a l s t r a i n parameter, e i s t h e e l e c t r o n i c charge, and

AQ

i s t h e quadrupolar bond charge t r a n s f e r . Now t h e i o n i c i n t e r n a l s t r a i n component e*q/a2

i s o n l y about 1.5% s m a l l e r i n Cdo.5Mno.5Te than i n CdTe [ r e f . 51 so t h a t e14 engance- ment must be due t o Mn reducing t h e bond charge t r a n s f e r term by about 10%. Me suggest t h a t t h e i n f l u e n c e o f Mn on t h e bond charge t r a n s f e r term i s due t o Mn 3d e l ectrons h y b r i d i z i n g w i t h sp3 bonding o r b i t a l s /5/.

To o b t a i n t h e c a l c u l a t e d curves shown i n Figures 1 and 2 we used Equations ( 1 ) and (2) w i t h wc = ~ ~ ( 0 ) exp(-E /kT) o b t a i n e d from t h e 10 MHz, a t t e n u a t i o n versus tem- p e r a t u r e r e s u l t s /5/ and t c e electromechanical c o u p l i n g f a c t o r deduced already. As can be seen from Figures 1 and 2 we o b t a i n very good f i t s t o Our experimental r e s u l t s . This i n d i c a t e s t h a t t h e e l e c t r i c a l c o n d u c t i v i t y must be an exponential f u n c t i o n of temperature c h a r a c t e r i z e d by a s i n g l e a c t i v a t i o n energy o f 0.36 eV.

(5)

CIO-516 JOURNAL DE PHYSIQUE

associated w i t h t h e r m a l l y a c t i v a t e d e l e c t r i c a l c o n d u c t i v i t y which i n d i c a t e s stronger electromechanical c o u p l i n g i n Cdo.55Mno.k5Te than i n CdTe. The enhanced e l e c t r o - mechanical c o u p l i n g i s due t o a s m a l l e r strain-induced t r a n s f e r o f bond charge, caused by t h e h y b r i d i z a t i o n o f Mn 3d States i n t o t h e t e t r a h e d r a l bonding o r b i t a l s . The c o n d u c t i v i t y a c t i v a t i o n energy, .which gives the d e f e c t i o n i z a t i o n energy, i s s i m i l a r t o t h a t observed by o t h e r s i n Cdl-xMnxTe w i t h various values o f x.

IOOO/T(K)

REFERENCES

T ( K )

*

Supported by NSF-MRL Grant DMR80-20249, Purdue Research Foundation and NSF Grant DMR79-08538A3 a t various times.

/1/ See f o r example, Furdyna, J. K.

,

J. Appl

.

Phys.

53

(1982) 7637.

/2/ Venugopalan, S., K o l o d z i e j s k i , L. A., Gunshor, R. L., and Ramdas, A. K., Appl

.

Phys. L e t t . (1984) 974 and B i c k n e l l

,

R. N., Giles-Taylor, N. C., Blanks, D. K., and Schetzina, J. F., Appl. Phys. L e t t . June 15, 1985.

/3/ Wu, A. Y. and Sladek, R. J., J. Phys. ( P a r i s ) Colloq. 42, (1981) C6-646. /4/ Maheswaranathan,

P.,

Sladek, R. J., and Debska, U., P h E . Rev. B Z (1985) 5212. /5/ Maheswaranathan, P., Sladek, R. J., and Debska, U., B u l l . Am. Phys. Soc.

z,

(1985) 216 and Phys. Rev. B, June 15, 1985.

/6/ Hutson, A. R. and White, D. L., J. Appl. Phys.

3

(1962) 40.

/7/ B e r l i n c o u r t , D., Jaffe, H. and Shiozawa, L. R., Phys. Rev.

.B

(1963) 1009. /8/ Peek, D., Guerra-Vela, C., and Sladek, R. J., J. Appl. Phys. (1985) 4803. /9/ Martin, R. M., Phys. Rev. BS (1972) 1607.

/ I O / Stankiewicz, J. and Aray, A., J. Appl. Phys.

53

(1982) 3117.

lo5

Fig. 3

-

p , the dc r e s i s t i v i t y o f

-

Cdo.55Mno.Q5Te versus inverse temperature. E

O

The s o l i d curve snows t h e r e s i s t i v i t y

c

io4

c a l c u l a t e d using 10 MHz u l tr a s o n i c r e s u l t s .

-

The 1 symbols i n d i c a t e experirnental e r r o r . Q

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