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VOLUME DEPENDENCE OF OPTICAL
TRANSITIONS IN GaAs : PHOTOMODULATED REFLECTIVITY
M. Hanfland, K. Syassen, N. Christensen
To cite this version:
M. Hanfland, K. Syassen, N. Christensen. VOLUME DEPENDENCE OF OPTICAL TRANSITIONS IN GaAs : PHOTOMODULATED REFLECTIVITY. Journal de Physique Colloques, 1984, 45 (C8), pp.C8-57-C8-60. �10.1051/jphyscol:1984811�. �jpa-00224309�
JOURNAL DE PHYSIQUE
Colloque C8, suppl6ment au n O 1 l , Tome 45, novembre 1984 page C8-57
VOLUME DEPENDENCE OF OPTICAL TRANSITIONS I N GaAs :
PHOTOMODULATED REFLECTIVITY
M. Hanfland, K. Syassen and N.E. Christensen*
Physikatisches I n s t i t u t , U n i v e r s i t t l t DUsseZdorf, 0-4000 DUsseZdorf I, F.R.G.
*Max-PZanck-Institut fiir FestkUrperfor6chung, 0-7000 S t u t t g a r t 80, F.R.G.
R'esumg - Nous avons b t u d i k , par une mkthode spectroscopique de r e f l e x i o n -dulge e t en u t i l i s a n t l a technique de 1 'enclume d diamant, l e comportement des gaps Eo e t E l en GaAs. On a dgterminii aussi l a r e l a t i o n pression-volume (PV) j u s q u ' d 170 kbar d l ' a i d e de l a d i f f r a c t i o n des rayons X 6 haute pression. La dgpendance de l ' h e r g i e o p t i q u e de t r a n s i t i o n en f o n c t i o n du volume ( c o e f f i c i e n t s 1 in g a i r e s e t quadratiques) e t l a r e l a t i o n PV expgrimentale sont comparges aux r c s u l t a t s obtenus p a r l e c a l c u l r e l a t i v i s t e s e l f - c o n s i s t a n t LMTO-ASA de l a s t r u c t u r e de bande.
A b s t r a c t - Photomodulated r e f l e c t i o n spectroscopy i n combination w i t h t h e diamond c e l l technique has been used t o study t h e pressure dependence o f the Eo and E l gaps i n GaAs. I n a d d i t i o n , t h e pressure-volume (PV) r e l a t i o n up t o 170 kbar i s determined by h i g h pressure x-ray d i f f r a c t i o n . The dependence o f t h e o p t i c a l t r a n s i t i o n energies on volume change ( l i n e a r and q u a d r a t i c c o e f f i c i e n t s ) as w e l l as t h e experimental PV r e l a t i o n a r e compared t o r e s u l t s o f s e l f c o n s i s t e n t r e l a t i v i s t i c LMTO-ASA band s t r u c t u r e c a l c u l a t i o n s .
I - INTRODUCTION
The development o f the diamond a n v i l c e l l (DAC) has s t i m u l a t e d t h e renewed i n t e r e s t i n experimental and t h e o r e t i c a l i n v e s t i g a t i o n s o f pressure e f f e c t s on t h e band s t r u c t u r e o f semiconductors. Absorption, photoluminescence, and resonant Raman techniques have been used t o measure c r i t i c a l p o i n t t r a n s i t i o n s (see e.g. Refs. 1-4) and the extended pressure range has made p o s s i b l e t h e d e t e c t i o n o f n o n l i n e a r
pressure dependences o f energy gaps (see e.g. Ref. 1 ) . Most o f t h e e x i s t i n g data have been obtained f o r t h e lowest d i r e c t gap Eo. I n t h i s r e p o r t we describe a new technique f o r o b t a i n i n g i n f o r m a t i o n on energy gaps w i t h t h e DAC by u t i l i z i n g photo- modulated r e f l e c t i o n s p e c t r o ~ c o p y . ~ - ' The method i s a p p l i e d t o study t h e Eo and E l gaps o f GaAs. I n a d d i t i o n , t h e l a t t i c e parameter o f t e t r a h e d r a l GaAs i s measured by h i g h pressure x - r a y d i f f r a c t i o n up t o 170 kbar. Using t h e experimental PV r e l a - t i o n , we determine the volume dependence o f t h e o p t i c a l gaps. The experimental data ( b o t h PV r e l a t i o n and o p t i c a l t r a n s i t i o n s as a f u n c t i o n o f volume) are compared t o r e s u l t s o f r e l a t i v i s t i c LMTO-ASA c a l c u l a t i o n s a l s o presented here.
The l a t t i c e parameter o f GaAs was measured i n a DAC u s i n g an a n g l e - d i s p e r s i v e powder d i f f r a c t o m e t e r . Samples were embedded i n a methanol-ethanol pressure medium and pressures were determined from t h e r e d - s h i f t o f t h e ruby R - l i n e fluorescence (0.365 8 / k b a r s ) . The experifiental setup f o r photonodulated r e f 1 e c t i o n spectroscopy i n a DAC i s based on a m i c r o o p t i c a l system described elsewhere.' L i g h t from a Xe a r c o r tungsten lamp i s passed through a 0.3 m g r a t i n g spectrometer and then focused o n t o t h e i n t e r f a c e between sample and a l c o h o l pressure medium i n s i d e the c e l l . The i n t e n s i t y o f t h e r e f 1 ected 1 i g h t i s modulated by simul taneousl y f o c u s i n g a chopped l a s e r beam a t a d i f f e r e n t photon energy (0.5 mW a t 628 nm o r 441 nm, chopping
Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1984811
C8-58 JOURNAL DE PHYSIQUE
frequency f~ = 78 Hz) o n t o t h e sample. The m o d u l a t i o n mechanism c o n s i s t s of a change i n t h e macroscopic e l e c t r i c f i e l d a t t h e sample s u r f a c e by t h e p h o t o i n j e c t i o n o f c a r r i e r s . 5 - 7 The in-phase m o d u l a t i o n i s d e t e c t e d by p a s s i n g t h e d e t e c t o r s i g n a l t h r o u g h a l o c k - i n amp1 i f i e r tuned t o f ~ . A p p r o p r i a t e f i l t e r i n g b l o c k s t h e l a s e r s t r a y l i g h t from r e a c h i n g t h e d e t e c t o r . The GaAs samples (n-type d o p i n g l e v e l -1017) had a t h i c k n e s s o f a b o u t 15 Dm.
I 1 1 - CALCULATIONS
The PV r e l a t i o n o f GaAs i s c a l c u l a t e d i n t h e s e l f - c o n s i s t e n t LMTO scheme by i n t r o - d u c i n g "empty spheres" and u s i n g t h e l o c a l d e n s i t y a p p r o x i m a t i o n (LDA) f o r exchange- c o r r e l a t i o n e f f e c t s ( C e p e r l e y - A l d e r d e s c r i p t i o n w i t h r e l a t i v i s t i c c o r r e c t i o n s ) . l o
The r e l a t i v i s t i c c o r r e c t i o n s do n o t i n f l u e n c e t h e ground s t a t e p r o p e r t i e s s i g n i f i - c a n t l y . However, t h e band gaps i n v o l v i n g s - l i k e s t a t e s ( e . g . t h e d i r e c t Eo gap a t r )
t u r n o u t t o be even s m a l l e r compared t o n o n - r e l a t i v i s t i c LDA c a l c u l a t i o n s (0.25 eV versus 1.1 eV - 1.2 eV f o r Eo). T h i s i s due t o t h e p a r t i c u l a r l y l a r g e ( n e g a t i v e ) m a s s - v e l o c i t y s h i f t f o r s - l i k e c o n d u c t i o n band s t a t e s . The d i s c r e p a n c y i s remedied by a d d i n g s h a r p l y peaked e x t r a p o t e n t i a l s on t h e atomic s i t e s and on t h e "empty sphere" s i t e s . These l o c a l i z e d , p o s i t i v e p o t e n t i a l s a c t e s s e n t i a l l y o n l y on s-states.
They a r e a d j u s t e d t o match t h e normal p r e s s u r e experimental gaps a t t h e T, L and X p o i n t s . The e x t r a p o t e n t i a l s , added t o t h e l o c a l - d e n s i t y p o t e n t i a l a t a l l stages o f s e l f - c o n s i s t e n t i t e r a t i o n , were t a k e n t o be independent o f volume.
I V - RESULTS AND DISCUSSICfi
The experimental PV d a t a f o r GaAs a r e shown i n F i g . 1. From u l t r a s o n i c experiments up t o 2 k b a r one f i n d s Bo = 747 k b a r and BA = 4.67," where Bo and BA a r e i s o t h e r m a l b u l k modulus and i t s p r e s s u r e d e r i v a t i v e a t 1 bar, r e s p e c t i v e l y . ide adopt t h i s v a l u e f o r Bo, because a d e t e r m i n a t i o n f r o m x - r a y d a t a would be l e s s a c c u r a t e . A f i t o f a B i r c h e q u a t i o n t o t h e e x p e r i m e n t a l d a t a y i e l d s BA = 4.44 ? 0.1. The d i f f e r e n c e be- tween t h e p r e s e n t PV r e l a t i o n and t h e f r e q u e n t l y used FTurnaghan e x t r a p o l a t i o n o f t h e u l t r a s o n i c r e s u l t s i s 3.5% a t 170 kbar. The c a l c u l a t e d PV r e l a t i o n ( s o l i d 1 in e i n Fig. 1 ) i s i n c l o s e agreement w i t h t h e e x p e r i m e n t a l d a t a . The e q u i l i b r i u m l a t t i c e parameter (5.650 f l ) d i f f e r s b y o n l y 0.05% f r o m t h e e x p e r i m e n t a l value. Bo i s c a l - c u l a t e d t o be 728 kbar, which i s 2.5% s m a l l e r t h a n t h e room-temperature v a l u e of Ref. 12. A l s o , t h e s l o p e BA = 4.4 agrees we1 w i t h t h e p r e s e n t experiment. F o r com- p a r i s o n , Froyen and Cohen13 o b t a i n a. = 5.57 I , Bo = 725 k b a r and B; = 3.82 i n t h e i r f i r s t p r i n c i p l e p s e u d o p o t e n t i a l c a l c u l a t i o n o f t h e ground s t a t e p r o p e r t i e s o f GaAs.
Photomodulated r e f l e c t i o n s p e c t r a o f GaAs near t h e E l gap a r e shown i n F i g . 2. The s t r u c t u r e observed a t 1 b a r i s s i m i l a r t o t h a t r e p o r t e d by i l i l s s o n 6 , e x c e p t f o r a s l i g h t l y broadened response p o s s i b l y due t o a h i g h e r d o p i n g l e v e l i n o u r case. The peaks a t 2.893 eV and 3.152 eV a r e a t t r i b u t e d t o t h e E l gap and i t s s p i n - o r b i t s p l i t companion a t E l + A1 i n analogy t o t h e assignment used i n e l e c t r o r e f l e c t a n c e
s t u d i e s . ' " The v a l u e o f A1 i s 0.253 eV + 0 . 0 1 eV as compared t o 0.227 eV f r o m Ref.
14. The d e ~ e n d e n c e o f E l and E l + A 1 on volume change i s shown i n F i g . 3. The s o l i d l i n e s correspond t o t h e r e s u l t s o f l e a s t squares f i t s u s i n g t h e q u a d r a t i c e x p r e s s i o n E(V) = E(Vo) + b(AV/Vo) + C ( A V / V ~ ) ~ , where V o . i s t h e normal p r e s s u r e volume. The c o e f f i c i e n t s b and c a r e g i v e n i n Table 1, which a l s o l i s t s o u r e x p e r i m e n t a l d a t a o b t a i n e d f r o m photomodulation spectroscopy a t t h e Eo gap. The c a l c u l a t e d band gaps have been f i t t e d i n a s i m i l a r manner and t h e r e s u l t i n g c o e f f i e c i e n t s a r e i n c l u d e d i n Table 1.
Comparison o f e x p e r i m e n t a l and c a l c u l a t e d r e s u l t s l e a d s t o t h e f o l l o w i n g conclusions:
( i ) The p r e s e n t e x p e r i m e n t a l d a t a f o r t h e Eo gap d e v i a t e n o t i c e a b l y f r o m those of Ref. 1, n o t o n l y i n t h e magnitude o f t h e l i n e a r c o e f f i e c i e n t b, b u t a l s o i n t h e d i r e c t i o n o f t h e nonl i n e a r behavior. The v a l u e o f b f r o m t h e LMTO c a l c u l a t i o n and f r o m t h e r e c e n t p s e u d o p o t e n t i a l c a l c u l a t i o n of Chang e t a1 . I 5 d i f f e r by about +4%
and -6%, r e s p e c t i v e l y , from t h e e x p e r i m e n t a l value. The LMTO c a l c u l a t i o n reproduces t h e s u p e r l i n e a r c h a r a c t e r i s t i c o f t h e volume dependence. ( i i ) The l i n e a r c o e f f i c i e n t s
F i g . 1 - Pressure-volume r e l a t i o n o f GaAs. Closed c i r c l e s : e x p e r i m e n t a l d a t a ; s o l i d l i n e : LMTO c a l c u l a t i o n ; dashed l i n e : M u r n a g h a n - e x t r a p o l a t i o n o f u l t r a s o n i c d a t a ; open c i r c l e : Ref. 11.
PHOTON ENERGY (eV)
VOLUME CHANGE ( A V / \ ~ . ~ O ' )
F i g . 2 - Photomodulated r e f l e c t i o n F i g . 3 - The El gaps o f GaAs as a f u n c - s p e c t r a o f GaAs near t h e E l gaps. t i o n o f volume change.
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Table 1 - C o e f f i c i e n t s ( i n eV) d e s c r i b i n g t h e volume dependence o f t h e Eo and E l gaps i n GaAs according t o the q u a d r a t i c expression given i n the t e x t .
...
...
E(VO) b C
Eo expa 1.452 -8.39f0.2 8 . 9 i 2
expb 1.450 -9.94 -7.0
c a l c a 1.452 -8.75 7.8
c a l c C -7.92
El expa 2.893 -5.88k0.2 -4.722
expC 2.900 -5.5
c a l c a 2.842 -5.82
c a i c a 3.057 -5.91
...
--- 6--- a ~ h i s work; Ref. I ( r e v i s e d ) ; ' ~ e f . 15;
d ~ e f . 16.
f o r t h e experimental E gaps agree c l o s e l y w i t h r e s u l t s obtained by electromodula- t i o n techniques.16 T h b c a l c u l a t i o n y i e l d s 1 in e a r c o e f f i c i e n t s i n excel l e n t agreement w i t h experiment. I t remains t o be i n v e s t i g a t e d , i f t h e present t h e o r e t i c a l approach a l s o reproduces the n o n l i n e a r volume dependence o f t h e E l gaps. ( i i i ) The experimental pressure c o e f f i c i e n t f o r t h e s p i n - o r b i t s p l i t t i n g A i s 0.19 t 0.05 eV/Mbar compared t o 0.3 + 0.1 eV/Mbar from Ref. 16. The c a l c u l a t i d value from t h i s work i s 0.125 eV/Mbar i n agreement w i t h Ref. 17. A more d e t a i l e d i n t e r p r e t a t i o n o f the p r e s e n t r e s u l t s wi 11 be g i v e n elsewhere.18
F i n a l l y , we p o i n t o u t t h a t t h e q u a l i t y o f r e s u l t s obtained by photomodulation spec- troscopy i n t h e DAC c r i t i c a l l y depends on t h e s e l e c t i o n o f samples g i v i n g the o p t i - mum response. With s u i t a b l e sample m a t e r i a l s t h e method should be a p p l i c a b l e t o o t h e r semiconductors, thus y i e l d i n g v a l u a b l e i n f o r m a t i o n on c r i t i c a l p o i n t t r a n s i - t i o n s above t h e fundamental gap and i n p a r t i c u l a r on t h e volume dependence o f t h e s p i n - o r b i t s p l i t t i n g .
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