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DISLOCATIONS IN III-V COMPOUNDS
K. Maeda, S. Takeuchi
To cite this version:
K. Maeda, S. Takeuchi. RECOMBINATION ENHANCED MOBILITY OF DISLOCATIONS IN III-V COMPOUNDS. Journal de Physique Colloques, 1983, 44 (C4), pp.C4-375-C4-385.
�10.1051/jphyscol:1983445�. �jpa-00223065�
JOURNAL DE PHYSIQUE
Colloque C4, suppl6rnent a u n09, Tome 44, septembre 1983 page C4-375
RECOMBINATION ENHANCED M O B I L I T Y OF DISLOCATIONS I N 111-V COMPOUNDS
K. Maeda and S. Takeuchi
I n s t i t u t e f o r S o l i d S t a t e P h y s i c s , U n i v e r s i t y o f Tokyo, Roppongi, Minato-ku, Tokyo 106, Japan
R6sum6 - On examise l e s c a r a c t e r i s t i q u e s q u a n t i t a t i v e s d ' e f f e t de renforcement p a r i r r a d i a t i o n aux e l e c t r o n s s u r l e g l i s s e m e n t des d i s l o c a t i o n s dans des composes 111-V (n-GaAs, n - I n P ) . Cet e f f e t e s t i n t e r p r c t e s u r l a base du mecanisme de P e i e r l s , p a r un a c c r o i s s e -
ment de l a m o b i l i t e des decrochements g r a c e a 1 'e n e r g i e relachQe p a r l e s r e c o m b i n a i s o n s non r a d i a t i v e s des p o r t e u r s i n j e c t & s u r l e s n i v e a u x
l o c a l i s @ s a s s o c i e s aux d i s l o c a t i o n s . A b s t r a c t -
beam i r r a d n - I n P ) a r e
Q u a n t i t a t i v e f e a t u r e s o f t h e enhancement e f f e c t by e l e c t r o n i a t i o n on t h e d i s l o c a t i o n g l i d e i n T I I - V compounds (n-6aks,
surveyed. The e f f e c t i s e x p l a i n e d i n terms o f t h e enhanced k i n k m i g r a t i o n i n t h e P e i e r l s mechanism w i t h an a s s i s t o f t h e energy r e l e a s e d by t h e n o n - r a d i a t i v e r e c o m b i n a t i o n of t h e i n j e c t e d c a r r i e r s a t t n e l o c a l i z e d l e v e l a s s o c i a t e d w i t h t h e d i s l o c a t i o n .
1 - INTRODUCTION
The remarkable i n f l u e n c e s o f e l e c t r o n i c e x c i t a t i o n , e.g. by 1 ig h t i l l u m i n a t i o n , on t h e p l a s t i c b e h a v i o r i n 11-VI compounds and a l k a l i h a l i d e s a r e known as t h e photo- p l a s t i c e f f e c t . As f o r elemental and 111-V compound semiconductors w i t h h i g h e r covalency, d i f f e r e n t t y p e s o f p h o t o p l a s t i c o r photomechanical e f f e c t had been r e p o r t e d e a r l i e r /I/, a l t h o u g h t h e i n t e r p r e t a t i o n o f t h e e f f e c t s has n o t been estab- l i s h e d . F o r t h e p a s t s e v e r a l y e a r s , an e l e c t r o n i c e x c i t a t i o n e f f e c t on d i s l o c a t j o n m o b i l i t y ( b o t h f o r c l i m b and g l i d e ) became r e c o g n i z e d i n some o p t o e l e c t r o n i c d e v i c e s
f a b r i c a t e d f r o m 111-V compounds /2,3/, though t h e q u a n t i t a t i v e f e a t u r e o f t h e e f f e c t was n o t c l a r i f i e d . The reason t o make t h e s t u d y d i f f i c u l t c o n s i s t s i n t h e coinplex
s t r u c t u r e o f d e v i c e s w h i c h i n t r o d u c e d f a t a l a m b i q u i t y i n e s t i m a t i n g t h e s t r e s s d r i v i n g i n d i v i d u a l d i s l o c a t i o n s . A c o u p l e o f y e a r s ago, t h e p r e s e n t a u t h o r s p e r - formed f o r t h e f i r s t t i m e q u a n t i t a t i v e measurements o f t h e e f f e c t o f electron?^
e x c i t a t i o n by e l e c t r o n beam i r r a d i a t i o n on t h e d i s l o c a t . i c n m o b i l i t y i n GaAs under w e l l - d e f i n e d c o n d i t i o n s / 4 / . The r e s u l t s showed a t y p i c a l f e a t u r e o f t h e recombina-
tion-enhanced d e f e c t m o t i o n .
The p r e s e n t paper aims t o s u r v e y t h e q u a n t i t a t i v e r e s u l t s o b t a i n e d so f a r by t h e p r e s e n t a u t h o r s f o r 111-V compounds, GaAs /4,5/ and I n P /ti/, i n comparison w i t h t h e r e s u l t s o f S i by KGsters and Alexander (KA) / 7 / f o r w h i c h a q u i t e s i m i l a r e f f e c t was r e p o r t e d under a l a s e r i l l u m i n a t i o n . " Based on t h e e x p e r i m e n t a l f j n d i n g s , d i s - c u s s i o n i s made o f t h e m i c r o s c o p i c processes i n v o l v e d i n t h e enhancement phenomenon.
2 - EXPERIMENTAL PROCEDURES
F o r measuring d i s l o c a t i o n v e l o c i t y , a r a t h e r n o v e l t e c h n i q u e u s i n g a scanning e l e c -
* I t i s n o t p r i m a r i l y i m p o r t a n t whether a h i g h energy e l e c t r o n beam i s used o r a l i g h t i s used t o e x c i t e t h e specimen. I n f a c t , t h e d i s l o c a t i o n g l i d e enhancement was observed a l s o i n t h e n-GaAs specimen b e n t f o r 1 h r a t room t e m p e r a t u r e under
i l l u m i n a t i o n w i t h a l i g h t f r o m a 2.2 W A r i o n l a s e r (514 nm).
Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1983445
t r o n microscope i n t h e cathodoluminescence mode (SEM-CL) was employed t o observe d i s l o c a t i o n s . The method i s based on t h e f a c t t h a t t h e r a d i a t i v e r e c o m b i n a t i o n o f excess c a r r i e r s e x c i t e d by an e l e c t r o n beam i s suppressed around d i s l o c a t i o n s and as a r e s u l t t h e p o s i t i o n s where t h e d i s l o c a t i o n s emerge f r o m beneath t h e specimen s u r f a c e can be observed as dark s p o t s i n t h e SEM-CL micrograph. One o f v a r i o u s advantages o f t h i s method o v e r t h e c o n v e n t i o n a l e t c h - p i t method i s t o enable us non- d e s t r u c t i v e o b s e r v a t i o n o f d i s l o c a t i o n s i n b u l k specimens f o r which a p p l i e d s t r e s s can be e s t i m a t e d w i t h accuracy. I n t h e p r e s e n t study, an apparatus f o r a p p l y i n g bending l o a d on specimens was i n s t a l l e d i n t h e specimen chamber t o a l l o w i n - s i t u measurements o f d i s l o c a t i o n motion. For t h e d e t a i l s o f t h e i n s t r u m e n t a l set-up, t h e r e a d e r i s r e f e r r e d t o /5/.
S i n g l e c r y s t a l s used were HB-grown, Si-doped n-GaAs ( n = 1.4 x 1018cm-3, p = 2200 cm2/
Vs) and LEC-grown, S-doped n-InP ( n = 5 x 1018cm-3, 1~ = 1200 cm2/Vs). plate-shaped specimens (13 x 2.6 x 0.25 mm3) f o r bending were c u t f n t o two o r i e n t a t i o n s ; one f o r v e l o c i t y measurements o f 6 0 " - d i s l o c a t i o n s ( t h e s u r f a c e i s ( I T ] ) , t h e l e n g t h w i s e d i - r e c t i o n [T23] and t h e bending a x i s [ S a l ] ) and the o t h e r f o r screw d i s l o c a t i o n s l t h e s u r f a c e i s ( 2 20 9), t h e l e n g t h w i s e d i r e c t i o n [20 2 9 1 and t h e bending a x i s [112]).
A p o l i s h e d specimen was p l a c e d on t h e f o u r - p o i n t bending j i g i n t h e SEM chamber and b e n t under a p r e s c r i b e d l o a d and a t v a r i o u s temperatures e i t h e r i n t h e dark o r under e l e c t r o n beam i r r a d i a t i o n r e a l i z e d by defocusing t h e 30 keV e l e c t r o n probe beam o f t h e SEM. The v e l o c i t y o f i n d i v i d u a l d i s l o c a t i o n s was e v a l u a t e d f r o m t h e d i s t a n c e t r a v e l e d b y t h e d i s l o c a t i o n d u r i n g t h e l o a d i n g . For GaAs, t h e measurements were repeated i n - s i t u f o r t h e same specimen v a r y i n g e x p e r i m e n t a l c o n d i t i o n s such as tem- p e r a t u r e , s t r e s s , i r r a d i a t i o n i n t e n s i t y , e t c . For InP, however, t h e SEM-CL c o n t r a s t o f d i s l o c a t i o n s was n o t enough t o l o c a t e t h e d i s l o c a t i o n p o s i t i o n s a c c u r a t e l y , so t h a t t h e d e t e r m i n a t i o n o f them were made p r a c t i c a l l y by t h e double e t c h i n g method w i t h t h e a s s i s t a n c e o f t h e SEM-CL image as a complementary guide.
The d i s l o c a t i o n t y p e was determined from a s i m p l e g e o m e t r i c a l c o n s i d e r a t i o n . The d i s t i n c t i o n between a- and B - d i s l o c a t i o n s was made a c c o r d i n g t o t h e moving d i r e c - t i o n s f r o m t h e d i s l o c a t i o n source which were o p p o s i t e t o each o t h e r .
3 - RESULTS
3.1. C a r r i e r Recombination a t D i s l o c a t i o n s
As mentioned i n t h e preceeding s e c t i o n , d i s l o c a t i o n s i n 111-V compounds a c t as e f f i c i e n t r e c o m b i n a t i o n c e n t e r s o f i n j e c t e d excess e l e c t r o n - h o l e p a i r s . E s p e c i a l l y i n GaAs and InP, i t i s known /8/ t h a t t h e d i s l o c a t i o n s suppress t h e r a d i a t i v e recom- b i n a t i o n ( 1 uminescence) w i t h few e x c e p t i o n a l cases. The p r e s e n t SEM-CL o b s e r v a t i o n s showed t h a t t h e g l i d i n g d i s l o c a t i o n s i n GaAs, t h a t s h o u l d be d o u b t l e s s l y f r e e o f d e c o r a t i o n i n t h e moving s t a t e a t l e a s t a t l o w e r temperatures, a c t as n o n - r a d i a t i v e r e c o m b i n a t i o n c e n t e r s . F i g u r e 1 shows a s e r i e s o f micrographs t a k e n f r o m a VTR t a p e t h a t r e c o r d e d SEM-CL TV scanning images o f a moving d i s l o c a t i o n g l i d i n g under an a p p l i e d l o a d . I n e v e r y frame t h e d i s l o c a t i o n i s observed as a dark s p o t i n d i c a t i n g t h e n o n - r a d i a t i v e n a t u r e o f r e c o m b i n a t i o n a t t h e d i s l o c a t i o n w i t h a f r e s h c o r e . From a c a r e f u l comparison o f SEM-CL c o n t r a s t s o f c l e a n m i s f i t d i s l o c a t i o n s i n Gal-xA1xAsl-vPv h e t e r o s t r u c t u r e s w i t h TEM micrographs o f t h e same d i s l o c a t i o n s , P e t r o f f e t a j . - / 9 / concluded t h a t t h e d i s l o c a t i o n s g i v i n g d a r k c o n t r a s t s i n t h e SEM- CL a r e a l l d i s s o c i a t e d i n t o Shockley p a r t i a l s . T h e r e f o r e t h e g l i d i n g d i s l o c a t i o n s observed i n t h e p r e s e n t SEM-CL t e s t s a r e c o n s i d e r e d t o be d i s s o c i a t e d i n t h e moving s t a t e .
3.2. G l i d e Behavior
As demonstrated i n F i g . 1, t h e m o t i o n o f d i s l o c a t i o n s i s smooth and u n i f o r m . A t t h e same s t r e s s and t h e same temperature, t h e v e l o c i t i e s o f t h e same t y p e o f d i s l o c a t i o n s d i d n o t d i f f e r much f r o m each o t h e r , which means t h a t a l a r g e number o f r a t e process- es a r e i n v o l v e d i n t h e d i s l o c a t i o n g l i d e i n t h e d i s t a n c e s c a l e o f t h e SEX observa- t i o n . I n o r d e r t o see t h e g l i d e f e a t u r e i n t h e s h o r t e r range motion, i n - s i t u obser- v a t i o n s o f d i s l o c a t i o n s were c a r r i e d o u t f o r GaAs u s i n g a TEM equipped w i t h a t e n s i l e stage. The v i s c o u s g l i d e b e h a v i o r observed i n TEM was much t h e same as t h a t observed i n t h e SEN-CL.
As f o r InP, w h i l e t h e v e l o c i t y o f 6 - d i s l o c a t i o n s was r e p r o d u c i b l e as i n GaAs, t h a t o f a - d i s l o c a t i o n s was q u i t e s c a t t e r e d . Due t o t h e p o o r r e p r o d u c i b i l i t y , t h e e f f e c t o f t h e e l e c t r o n i r r a d i a t i o n on t h e a- d i s l o c a t i o n s i n I n P was n o t s u c c e s s f u l l y i n v e s t i - gated.
0 Thus, t h e d i s l o c a t i o n s on w h i c h t h e e f f e c t o f e l e c - t r o n i r r a d i a t i o n was i n v e s t i g a t e d a r e t h o s e w h i c h e x h i b i t e d t h e v i s c o u s g l i d e presumably c o n t r o l l e d b y t h e P e i e r l s mechanism.
3.3. Enhanced G l i d e
3.3.1. Q u a l i t a t i v e Features - I n F i g . 2 t h e e f f e c t o f t h e 30 keV e l e c t r o n beam i r r a d i a t i o n on t h e t r a v e l i n g d i s t a n c e o f an i s o l a t e d d i s l o c a t i o n i s
shown as a f u n c t i o n o f t h e l o a d i n g t i m e . Upon 9 s commencement and c e s s a t i o n o f t h e i r r a d i a t i o n , t h e i d e n t i c a l d i s l o c a t i o n q u i c k l y changed i t s v e l o c i t y . What i s i m p o r t a n t i n t h i s f i g u r e i s t h a t t h e enhance, ment e f f e c t i s c o m p l e t e l y r e v e r s i b l e . Consequently . t h e enhancement e f f e c t i s d e f i n i t e l y n o t due t o any i r r e v e r s i b l e change such as s u r f a c e c o n t a m i n a t i o n , r a d i a t i o n damage and so f o r t h .
The e f f e c t o f e l e c t r o n beam i r r a d i a t i o n was a l s o r e c o g n i z e d i n t h e v i s c o u s d i s l o c a t i o n m o t i o n i n TEM.
The d i s l o c a t i o n g l i d e was enhanced s i g n i f i c a n t l y onl:18s a t l o w temperatures below 450 K, w h i c h i s c o n s i s t e n t w i t h t h e o b s e r v a t i o n i n t h e b u l k specimen d e s c r i b e d i n t h e n e x t s e c t i o n . T h i s f a c t s t r o n g l y suggests t h a t t h e enhancement t a k e s p l a c e i n t h e i n t r i n s i c P e i e r l s mechanism r a t h e r t h a n d e p i n n i n g o f d i s l o c a -
t i o n segments f r o m some p o i n t o b s t a c l e s . 50 um
3.3.2. Temperature Dependence - The t e m p e r a t u r e
dependence o f o f d i s l o c a t i o n v e l o c i t y v . under F i g . 1 - SEM-CL TV scanning e l e c t r o n i r r a d i a t i o n e x h i b i t s a q u i t e d j s t i n c t i v e
j/aieiag.a
f e a t u r e : A t h i g h temperatures above Tc t h e v e l o c i t y
n-GaAs
screw dislocation
%
0.21 irmd.+ dark I irrad.0
I
F i g . 2 - E f f e c t o f e l e c t r o n beam i r r a d i a t i o n on t h e t r a v e l i n g d i s t a n c e o f an i s o l a t e d screw d i s ! o c a t i o n i n n-GaAs as a f u n c t i o n o f l o a d i n g t i m e .
'0 1000 2000 " ~ 0 0 0 5000
Loading Time ( s )
u . c o n i n c i d e s w i t h t h a t i n t h e dark vd. Below Tc i t d e v i a t e s f r o m t h e dependence i n t h e d a r k t o a h i g h e r v a l u e f o l l o w i n g a n o t h e r A r r h e n i u s f o r m u l a w i t h a l o w e r a c t i v a - t i o n energy t h a n t h a t i n t h e dark. F i g u r e 3a shows I n v - l / ~ p l o t s f o r t h r e e t y p e s o f d i s l o c a t i o n s i n t h e n-GaAs and F i g . 3b f o r 6- d i s l o c a t i o n s i n t h e n-InP.
The c h a r a c t e r i s t i c dependence i s common t o a1 1 cases, though t h e v e l o c i t y measure- ment was n o t a c t u a l l y made f o r t h e screw d i s l o c a t i o n s i n n-GaAs up t o h i g h temper- a t u r e s . I n t h i s r e s p e c t , a q u i t e s i m i l a r l n v - I/T r e l a t i o n was found i n S i / 7 / . The e f f e c t o f i r r a d i a t i o n i n t e n s i t y on t h e t e m p e r a t u r e dependence was i n v e s t i g a t e d f o r a - d i s l o c a t i o n s i n n-GaAs.
F i g u r e 4 demonstrates t h e two temperature dependences f o r two i n t e n s i t i e s . The magnitude o f t h e a c t i v a t i o n energy under i r r a d i a t i o n i s found t o b e c o n s t a n t independ- e n t o f t h e i r r a d i a t i o n i n t e n - s i t y . The i n c r e a s e i n i n t e n - s i t y s i m p l y s h i f t s up t h e I n vi - l / T r e l a t i o n i n para1 - 1 e l . I n o t h e r words i t i s t h e p r e e x p o n e n t i a1 f a c t o r t h a t i s a f f e c t e d by t h e i r r a d i a t i o n . I t i s n o t e d t h a t t h e p r e e x p o n e n t i a l f a c t o r v h v a l u a t e d b y e x t r a - p o l a t i n g 2 t h e I n vi - llr r e l a t i o n below i s o r d e r s o f magnitude s m a l l e r t h a n t h a t i n t h e d a r k . T h i s i s a r e m a r k a b l e d i f f e r e n c e f r o m t h e b e h a v i o r of t h e doping e f f e c t o f d i s l o c a t i o n m o b i l i - t y observed i n v a r i o u s semi- c o n d u c t o r s /10,11/, i n w h i c h t h e p r e e x p o n e n t i a l f a c t o r a r e n o t g r e a t e l y a f f e c t e d .
3.3.3. I n t e n s i t y Dependence -
The dependence o f t h e d i s l o - c a t i o n v e l o c i t y on t h e i r r a - d i a t i o n i n t e n s i t y was meas- u r e d a t a f i x e d t e m p e r a t u r e below Tc. F i g u r e 5 shows
T ( K )
800 700 600 500 LOO 350 300
I ' ' I I
F i g . 3a - Temperature dependences o f d i s l o c a t i o n v e l o c i t y f o r t h r e e t y p e s o f d i s l o c a t i o n s i n n-GaAs i n t h e d a r k and under e l e c t r o n beam i r r a d i a t i o n .
n-lnP
= 2 2 ~ ~ l m * dark irrad.
B
-
- - 0 - ->.
2
l a " --
9C 0
.- 316'-
-
UI 05
lo-"'-
'-<...
1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 llT(10-31C')
F i g . 3b - Temperature dependences o f d i s l o c a t i o n v e l o c i t y f o r 6 - d i s l o c a t i o n s i n n-InP i n t h e d a r k and under e l e c t r o n beam i r r a d i a t i o n .
The parameters i n eq. ( 1 ) e v a l u a t e d 1 IT K')
f r o m F i g s . 3a, 3b and t h e d a t a f o r F i g . 4 - Temperature dependences o f a- S i / 7 / a r e summarized i n T a b l e 1. d i s l o c a t i o n v e l o c i t y i n n-GaAs f o r two Note t h a t ( 1 ) t h e v a l u e s o f i r r a d i a t i o n i n t e n s i t i e s .
p r e e x p o n e n t i a l f a c t o r v$ a r e
t y p i c a l 1 y an o r d e r o f 1 04-5m/s 1o6-
whereas t h e vz has much s m a l l - n-GaAs a-dislocation e r v a l u e s determined b y t h e ul r = 4 0 MNlm2
i r r a d i a t i o n i n t e n s i t y ; ( 2 )
-
E T=420 K/"
f3- and screw d i s l o c a t i o n s i n
GaAs have v e r y c l o s e v a l u e s
.- .P
/fo f Ei as w e l l as Et. 8
f lo-'
4 - DISCUSSION z C 0
4.1. Enhanced Component
-
ulii
When d i s l o c a t i o n s i n t e t r a - 6 n e d r a l l y c o o r d i n a t e d c r y s t a l s
a r e d i s s o c i a t e d as supposed /!J
i n t h e p r e s e n t case, t h e 1 6 ~
m o b i l i t y o f t h e whole d i s l o - 1 o - ~ 16" 1
Irradiation Intensity ( ~ l r n * ) c a t i o n p i s determined b y
t h o s e o f t h e p a r t i a l s p1 and F i g . 5 - I n t e n s i t y dependence o f a - d i s l o c a t i o n
p2 as v e l o c i t y i n n-GaAs.
l / = l / l + l / 2 . ( 2 ) t h e i n c r e m e n t o f v e l o c i t i e s f r o m t h e
v a l u e i n t h e d a r k as a f u n c t i o n o f T (K)
t h e number o f e l e c t r o n s i n c i d e n t p e r 600 500 I 400 I 300 I
Therefore, t h e measured m o b i l i t y i s determined d o m i n a n t l y b y t h e p a r t i a l w i t h a s m a l l e r m o b i l i t y .
u n i t t i m e on t h e specimen s u r f a c e o f u n i t area. The dependence i s almost l i n e a r , w h i c h i n d i c a t e s t h a t t h e p r e e x p o n e n t i a l f a c t o r i s p r o p o r t i o n a l
I n t h e z i n c b l ende c r y s t a l s , t h e r e a r e s i x t y p e s o f d i s l o c a t i o n s a s s o r t e d a c c o r d i n g t o t h e c o n s t i t u e n t p a r t i a l s by d i s t i n g u i s h i n g t h e o r d e r ( l e a d i n g o r t r a i l i n g ) as shown i n F i g . 6. The d i s l o c a t i o n s whose v e l o c i t i e s were measured i n t h e p r e s e n t
n-GaAs
\
a-dislxationt o t h e r a t e o f c a r r i e r i n j e c t i o n b y t h e i r r a d i a t i o n .
Thus, a u n i f i e d e x p r e s s i o n o f d i s l o -
-
c a t i o n v e l o c i t y i n c l u d i n g t h e e x c i t - 2
a t i o n i n t e n s i t y as a n o t h e r parameter 5 1 ~ 7 - i s v = V: exp(-Et/kT) .-
-
X 0 o1
y
+ 11 'I exp[- (E* - A E ) / ~ T ]
. ,
1c8-Here, E~ i s t h e a c t i v a t i o n energy i n ,O t h e d a r k (1=0) and E - A E = E ~ is t
-
ult h e a p p a r e n t a c t i v a t i o n energy under 6 i r r a d i a t i o n below T
.
A t h i g h tem- 16'- p e r a t u r e s t h e f i rs t C t e r m dominatesso t h a t no e f f e c t o f i r r a d i a t i o n i s observed. A t l o w temperatures under i r r a d i a t i o n t h e second t e r m predomi-
n a t e s . l d O
4 "4.
1=0.044Alm2
in the dark
I ,
1'5 2 .O 2.5 3.0 3.5
Table 1 - Parameters evaluated from t h e experiments. E i s t h e band gap energy
a t 300 K. 9
Ga As Ga As GaAs InP S i /7/
a B screw B 30°/900
v: (m/s) 9x1 o2 8x1 0' 9x105 7x1 05 3x1 0 4
v: (m/s) 4x1 0-4 3x1 0-' 3x1 Od2 5x1 0- 3x1 0 - I
g ( ~ n - ~ / s ) 5 ~ 1 0 ~ ~ 6x1 O2 4x102' 6x1 02 lx1O2'
~ : / ~ ( r n " ) 8 ~ 1 0 - ~ ~ 5 ~ 1 0 - ~ ~ 8 ~ 1 0 - ~ ~ 8 ~ 1 0 - ~ ~ 3x1 O-'
zt (ev) I .oo 1.7 1.72 1.60 1.82
E; ( e v ) 0.29 0.6 0.64 0.70 1.14
E~ (eV) 20.7
>I.]
- 21.1 - 20.9 20.7 -Em (eV) 1.0> 20.7 1.7> 21.1 1.7> 21.1 1.6, 20.9 1.8> 20.7
Edk(eV) 50. 6 51 - 3 51.3 - 51.4 - 52.3 -
E~ (eV) 1.43 1.43 1.43 1.28 1 - 1 1
study a r e i n t e r p r e t e d as a -t 90°(a)/300(a), B + 30°(B)/900(B) and screw -t 30"(ct)/30°(~).
I f we n e g l e c t t h e o r d e r o f p a r t i a l s /12, 13/, the common component between a- and screw, and between 6- and screw d i s l o c a - t i o n s a r e 30°(ct) and 30°(fK) p a r t i a l s , r e s p e c t i v e l y . As seen i n Fig. 3a and noted p r e v i o u s l y , t h e a c t i v a t i o n energies Et o f t h e B- and screw d i s l o c a t i o n s a r e c l o s e t o each o t h e r . I n a d d i t i o n , both o f them e x h i b i t lower m o b i l i t y than t h e a - d i s l o c a t i o n . From these f a c t s i t may be deduced t h a t t h e 3O0(B) p a r t i a l posesses t h e lowest m o b i l i t y among a l l the p a r t i a l s and determines t h e m o b i l i t y
o f t h e B- and t h e screw d i s l o c a t i o n s i n x
the dark as concluded p r e v i o u s l y by 30(a)
Ninomiya /14/. Fig. 6 - S i x types-of d i s s o c i a t e d d i s -
l o c a t i o n s along <110> d i r e c t i o n s on As seen i n Table 1, E . i s a l s o c l o s e t o (111) s l i p plane.
each o t h e r between th& 5- and t h e screw
d i s l o c a t i o n s . T h i s may be r e f l e c t i n g t h a t t h e m o b i l i t y o f t h e 30°(8) p a r t i a l i s enhanced by t h e i r r a d i a t i o n b u t s t i l l low enough t o c o n t r o l t h e whole d i s l o c a t i o n motion. Unfortunately, i t i s n o t known from t h e present r e s u l t alone which p a r t i a l
i s r e s p o n s i b l e f o r t h e enhancement o f the a - d i s l o c a t i o n . 4.2. Enhancement Mechanism
4.2.1. Heating o f L a t t i c e - As t h e most t r i v i a l cause o f t h e enhancement, one may suspect a h e a t i n g o f l a t t i c e by t h e e l e c t r o n i r r a d i a t i o n . This was checked by various t e s t s /4-6/. (1) A small thermocouple t h a t was touched d i r e c t l y on t h e specimen surface d i d n o t d e t e c t a s i g n i f i c a n t temperature r i s e , i n agreement w i t h a t h e o r e t i c a l estimate. (2) I f t h e enhancement was caused by h e a t i n g o f t h e l a t t i c e , the temperature r i s e should be almost p r o p o r t i o n a l t o t h e i r r a d i a t i o n i n t e n s i t y I, so t h a t t h e v e l o c i t y under i r r a d i a t i o n would depend on I q u i t e non-1 i n e a r l y . This i s i n c o n s i s t e n t w i t h t h e a c t u a l l i n e a r v . - I r e l a t i o n ( F i g . 5). ( 3 ) The same conclu- s i o n was drawn from another t e s t varyingzthe average e l e c t r o n dose r a t e by chopping the i r r a d i a t i o n o f a f i x e d i n t e n s i t y a t various d u t y cycles, which gave a l i n e a r r e l a t i o n between t h e d i s l o c a t i o n v e l o c i t y and t h e d u t y c y c l e o r t h e average power
i n p u t /4/. ( 4 ) Furthermore, i n e v e r y case, i f t h e h e a t i n g e f f e c t was t h e cause, one would e x p e c t t h e ]nui-1/T r e l a t i o n merged w i t h t h e ]nud-1/[P r e l a t i o n i n a g r a a u a l way f o l l o w i n g v; e x p [ - E ~ / ~ ( T + A T ) ] , where AT i s t h e t e m p e r a t u r e r i s e t h a t s h o u l d be p r o p o r t i o n a l t o t h e temperature T, w h i c h i s q u i t e u n l i k e l y . Thus, t h e e f f e c t o f l a t t i c e h e a t i n g b y i r r a d i a t i o n i s concluded t o be n e g l i g i b l e i n t h e p r e s e n t s t u d y .
4.2.2. Charge S t a t e E f f e c t - A l t h o u g h t h e mechanism o f t h e d o p i n g e f f e c t o r t h e charge s t a t e e f f e c t on d i s l o c a t i o n m o b i l i t y /10,11/ i s n o t y e t e s t a b l i s h e d , t h e p r e s e n t e f f e c t i s n o t e x p l a i n e d by t h e d o p i n g e f f e c t . I n GaAs, t h e m o b i l i t y o f t h e a - d i s l o c a t i o n i s known t o be i n s e n s i t i v e t o doping w h i l e t h a t o f t h e $ - d i s l o c a t i o n v e r y s e n s i t i v e /11/. I f t h e r o l e o f t h e e l e c t r o n i r r a d i a t i o n was t o change t h e quasi-Fermi l e v e l , t h e r e s u l t a n t e f f e c t s h o u l d be l e s s pronounced i n t h e a - d i s l o c a - t i o n t h a n t h e 6 - d i s l o c a t i o n , which i s c o n t r a d i c t o r y w i t h t h e p r e s e n t r e s u l t s .
Furthermore, w h i l e t h e d o p i n g e f f e c t m a n i f e s t s i t s e l f w i t h a change i n t h e a c t i v a t i o n energy o f t h e d i s l o c a t i o n v e l o c i t y , t h e a c t i v a t i o n energy i n t h e p r e s e n t case does n o t depend on t h e i r r a d i a t i o n i n t e n s i t y t h a t would change t h e quasi-Fermi l e v e l as t h e doping does. Thus t h e charge s t a t e e f f e c t i s u n l i k e l y t o be t h e cause o f t h e enhancement e f f e c t .
4.2.3. Recombination Enhanced D e f e c t M o t i o n - As shown i n 3.1, r e c o m b i n a t i o n s o f i n j e c t e d c a r r i e r s a t d i s l o c a t i o n s a r e n o n - r a d i a t i v e . A c t u a l l y , b a l l i s t i c phonon e m i s s i o n can be observed d u r i n g n o n - r a d i a t i v e r e c o m b i n a t i o n i n d i s l o c a t e d GaAs c r y s t a l s /15/. Weeks e t a l . /16/ c o n s i d e r e d t h a t t h e v i b r a t i o n a l energy disposed l o c a l l y a t a r e c o m b i n a t i o n c e n t e r b y a n o n - r a d i a t i v e t r a n s i t i o n i s d i r e c t l y u t i l i z e d b y t h e d e f e c t i t s e l f t o a s s i s t i t s own r e a c t i o n o r m o t i o n b e f o r e t h e energy d i s s i - pates i n t o t h e s u r r o u n d i n g medium. Based on a more g e n e r a l i z e d model, Sumi /17/
d e r i v e d e x p r e s s i o n s f o r t h e r e c o m b i n a t i o n enhanced r e a c t i o n r a t e t h a t v a r y depending on t h e r a l a t i v e magnitude o f E~ w i t h r e s p e c t t o E*, where E* i s t h e a c t i v a t i o n energy o f t h e r e a c t i o n a t t h e t h e r m a l e q u i l i b r i u m - ( i n t h e d a r k ) and E~ t h e energy r e l e a s e d upon t h e n o n - r a d i a t i v e r e c o m b i n a t i o n . A c c o r d i n g t o h i s t h e o r y , t h e enhance- ment r e a c t i o n r a t e i s g i v e n by
( nlR exP [-(Et - E,)/k~l 2
f o r E~ < y Et (3a
2 2
y ) k ~ l f o r y E~ < E~ < 2
( 3 b ) f o r E ~ / Y 2 < E~ , ( 3 c ) where R i s t h e r e c o m b i n a t i o n r a t e . The parameter y i s t h e d i r e c t i o n a l c o s i n e between
t h e r e a c t i o n c o o r d i n a t e and t h e a c c e p t i n g c o o r d i n a t e on which t h e c e n t e r c a p t u r e s t h e c a r r i e r . U s u a l l y t h e a c t u a l magnitude o f y (51 ) i s n o t known a p r i o r i
.
F o ra g e n e r a l argument, l e t eqs. ( 3 a ) - ( 3 c ) be r e p l a c e d by a common e x p r e s s i o n
R~~ = ~ I ~ R exp [ - ( E ~ - E ~ * ) / ~ T ]
.
( 4 )Here Er* i s i n general a f r a c t i o n o f Er and s a t i s f i e s t h e r e s t r i c t i o n s Er* 5 Er and 0 - Ep* 2 E,. I n any case, t h e k i n e t i c s o f t h e r e c o m b i n a t i o n enhanced d e f e c t m o t i o n (REDM) i s c h a r a c t e r i z e d b y t h e r e d u c t i o n o f t h e a p p a r e n t a c t i v a t i o n energy and t h e p r e e x p o n e n t i a l f a c t o r t h a t v a r i e s i n p r o p o r t i o n t o t h e r e c o m b i n a t i o n r a t e R.
T h i s model a c h i e v e d a g r e a t success i n e x p l a i n i n g t h e enhanced a n n e a l i n g o f r a d i a - t i o n - p r o d u c e d p o i n t d e f e c t s i n GaAs, Gap and S i upon m i n o r i t y c a r r i e r i n j e c t i o n /18/.
The k i n e t i c s o f t h e enhanced g l i d e i s s u r p r i s i n g l y s i m i l a r t o t h a t o b t a i n e d i n t h e enhanced a n n e a l i n g , which s t r o n g l y suggests t h a t t h e p r e s e n t e f f e c t i s a l s o e x p l a i n - e d i n terms o f t h e REDM mechanism.
The r e c o m b i n a t i o n r a t e R i n eq. ( 4 ) i s r e l a t e d t o t h e c a r r i e r i n j e c t i o n r a t e o r t h e e l e c t r o n - h o l e p a i r g e n e r a t i o n r a t e g p e r u n i t volume. For t h e e l e c t r o n beam i n j e c - t i o n , g may be e v a l u a t e d as
g % v a l l ( E ~ ~ ~ s I (5) where v i s t h e a c c e l e r a t i n g v o l t a g e o f i n c i d e n t electrons, E. (s5eV) t h e i o n i z a - t i o n engrgy t o c r e a t e an e l e c t r o n - h o l e p a i r and 5 (cZvm) t h e "Onpenetration distance.
As R i s t o be p r o p o r t i o n a l t o g a t low i n j e c t i o n l e v e l s , we can r e w r i t e eq. ( 4 ) as
R,, = n i f I exp [-(st - ~ ~ * f l k l ]
.
(6)The above formula q u a l i t a t i v e l y agrees w e l l w i t h t h e second term i n eq. (1 ) . For l a r g e r i n j e c t i o n ,
where P i s t h e power i n p u t per u n i t area and 6 t h e a b s o r p t i o n l e n g t h o f t h e l i g h t w i t h a photon energy o f hv. The c a l c u l a t e d values o f g i n t h e experiments a r e l i s t e d i n Table 1. I t i s noted t h a t the r a t i o s o f v? t o g a r e s i m i l a r t o each o t h e r among various d i s l o c a t i o n types and c r y s t a l s , suggesting a common mechanism being o p e r a t i n g i n the enhancement.
The e l e g a n t success i n e x p l a i n i n g t h e p o i n t d e f e c t annealing i n terms o f t h e REDM mechanism i s due t o t h e s i t u a t i o n t h a t t h e energy E released upon t h e n o n - r a d i a t i v e recombination a t t h e defects can be evaluated from f h e knowledge o f t h e e l e c t r o n i c energy l e v e l s associated w i t h t h e p o i n t d e f e c t s and hence t h e theory can be checked by comparing t h e E, d i r e c t l y w i t h t h e e x p e r i m e n t a l l y obtained r e d u c t i o n o f t h e a c t i v a t i o n energy 1181. I n t h e case o f d i s l o c a t i o n s , however, t h e knowledge o f t h e energy l e v e l s associated w i t h t h e d i s l o c a t i o n i s g e n e r a l l y s t i l l l i m i t e d . Even i n the cases o f Si and Ge f o r which t h e p o s i t i o n s o f t h e d i s l o c a t i o n l e v e l s a r e r e l a - t i v e l y well-documented 1191, the a c t u a l r a t e - c o n t r o l l i n g process o f t h e d i s l o c a t i o n g l i d e i n those c r y s t a l s i s l e s s founded i n comparison w i t h t h e case o f p o i n t d e f e c t s . 4.3. R a t e - c o n t r o l l i n g Process o f D i s l o c a t i o n G l i d e
Experimentally t h e d i s l o c a t i o n v e l o c i t y i n semiconductors i s w e l l expressed by a formula
v = A
-ern
exp (-E/~!P) , ( 8 )where T i s t h e a p p l i e d s t r e s s . The d i f f i c u l t y w i t h t h e d i s l o c a t i o n m o b i l i t y problem i s t o e x p l a i n t h e s t r e s s e x p o n e n t m = l . O ' ~ 1 . 5 and t h e r e l a t i v e l y small magnitude o f t h e preexponential f a c t o r A . T ~ ( t y p i c a l l y %105"6m/s).
A comprehensive e x p l a n a t i o n invokes a viscous motion o f k i n k s due t o t h e s i g n i f i c a n t P e i e r l s p o t e n t i a l o f t h e second k i n d . The s t r e s s exponent near u n i t y i s explained by t h e d i f f u s i o n a l motion o f abrupt k i n k s i n t h e course o f t h e double k i n k nuclea- t i o n as i l l u s t r a t e d i n Fig. 7 and t h e small preexponential f a c t o r i s a r e s u l t o f k i n k
f
critical width--A
F i g . 7 - The P e i e r l s mechanismL \L
c o n s i s t i n g o f t h e double k i n kF--;
---:--
;--- .--- ,---,---I---,--, n u c l e a t i o n accompanying k i n kI I
I I I I
I I
I / l I I d i f f u s i o n and the l a t e r a l migra-
, , I , , I
1
t i o n o f abrupt k i n k s .'Z, Dk
c o l l i s i o n s which e f f e c t i v e l y shorten t h e l e n g t h o f t h e d i s l o c a t i o n segment. The double k i n k formation r a t e per u j i t time per u n i t length, when t h e d i f f u s i o n a l m i g r a t i o n of k i n k s i s considered, i s w r i t t e n as 1201
K = ( ~ ~ r b h l a 2 k l ) exp ( - E d k / k ~ )
= (vkrbh/kp) exp [- (E, + E ~ ~ ) / ~ T ]
-
,Here Dk i s the d i f f u s i o n constant o f k i n k s given by vkaL exp (-E,/~T), vk t h e v i b r a - t i o n a l frequency o f t h e k i n k ( t h e o r d e r o f t h e Debye frequency), b t h e s t r e n g t h of o f t h e Burgers vector, a the p e r i o d along t h e d i s l o c a t i o n , h t h e p e r i o d o f t h e
P e i e r l s p o t e n t i a l v a l l e y , E~ t h e k i n k m i g r a t i o n energy and E~~ t h e f r e e energy o f t h e double k i n k . The v e l o c i t y o f t h e d i s l o c a t i o n normal t o i t s e l f i s
v = 2hZK , (1 0)
where Z i s t h e mean d i s t a n c e swept by a k i n k along t h e d i s l o c a t i o n segment u n t i l i t reaches t h e end o f t h e whole segment o r i s a n n i h i l a t e d w i t h a k i n k o f opposite s i g n generated on the same segment. When Z i s determined by t h e mutual k i n k c o l l i - sions ( k i n k - c o l l i s i o n case),
2 = Zk = (vk/K) 112
= a exp (Edk/2kT) , (11)
where vk i s t h e d r i f t v e l o c i t y o f a k i n k given by ~ ~ ~ b h / k ~ . The i n s e r t i o n o f eqs.
( 9 ) and (11) i n t o eq. (10) gives t h e d i s l o c a t i o n v e l o c i t y i n t h e dark as vd = 2h(vkK) 112
= 2(vkabh /kT)-r exp [ - ( E ~ 2 +Emc/2)/kT]
.
( 1 2) The a c t i v a t i o n energy i n the dark i s t h e r e f o r eEt = Em + E
-
The viscous k i n k motion i m p l i e s t h a t the elementary a c t i v a t i o n process i s t h e k i n k m i g r a t i o n even i n the double k i n k formation. This view r e q u i r e s t h a t t h e k i n k m i g r a t i o n i s t h e process i n which t h e enhancement takes place, because t h e double k i n k w i t h t h e c r i t i c a l w i d t h (several a ) i s n o t reached by a s i n g l e a c t i v a t i o n . I f we adopt t h i s view-point, an energy E ~ * , a f r a c t i o n o f t h e recombination energy EF released a t t h e kinks, i s s u b t r a c t e d i r o m t h e k i n k m i g r a t i o n energy Em i n eq. ... (9):
Thus t h e k i n k d i f f u s i o n constant under i r r a d i a t i o n i s expressed by
D~~ = nia 2 R exp [ - ( E ~ - E ~ * ) / ~ T ]
.
(14)I f we suppose t h a t a l l o f t h e generated c a r r i e r s w i t h i n t h e m i n o r i t y c a r r i e r d i f f u - s i o n l e n g t h X (several pm) from t h e recombination c e n t e r recombinelat t h e center, t h e recombination r a t e ( % ( 4 n / 3 ) ~ ~ ~ ) i s estimated t o be ~ 1 0 " " ~ ~ s , which i s much h i g h e r than the thermal d i f f u s i o n r a t e o f a k i n k vkexp (-Em/kT). Hence t h e recombi- n a t i o n can take p l a c e i n every step o f t h e k i n k jump and t h e r e f o r e t h e Boltzmann f a c t o r o f t h e double k i n k f o r m a t i o n r a t e under i r r a d i a t i o n becomes exp[-(Em-Er*
+ E & ) / ~ T I .
Since t h e primary enhancement i s r e s t r i c t e d i n t h e e x c i t e d depth 5 (severaf pm i n t h e 111-V compounds and ~ 5 0 u m i n t h e S i case), the k i n k mean f r e e path 2 under i r r a d i a t i o n i s determined by t h e s m a l l e r value between 5 and Z P . The value of Zk (eq. (11 ) ) i s determined by E~~ alone and n o t a f f e c t e d by t h e r e d u c t i o n o f Em by t h e i r r a d i a t i o n . If we assume-that t h e value o f E~ i s SO small t h a t Zk< g (as discussed l a t e r , t h i s seems t o be v a l i d i n the I I I ~ V compounds and even i n t h e S i ) , the k i n k - c o l 1 is i o n case s t i l l holds under i r r a d i a t i o n too and hence the apparent a c t i v a t i o n energy i s w r i t t e n as
E. = E + E /2-E,*.
z m dk (15)
Therefore t h e r e d u c t i o n o f t h e a c t i v a t i o n energy AE i s given by E ~ * . Although a separate e v a l u a t i o n o f E~ and E~~ i s n o t p o s s i b l e from t h e present experiment o n l y , p e r m i t t e d ranges can be imposed on these values from a l o g i c a l c o n s i d e r a t i o n . From eqs. (1 3 ) , (15) and t h e r e s t r i c t i o n 0 5 E?* 5 E ~ , i n e q u a l i t y r e l a t i o n s
%
5 2 ~ ; and Et > E~ 2 E~ - E; a r e obtained. The e v a l i a t e d 1 im i t s a r e 1 is t e di n Table 1
The v a l i d i t y o f t h e above assumption Zk < 6 i s s a t i s f i e d d o u b t l e s s l y i n the a - d i s l o - c a t i o n i n GaAs. I f we suppose Zk > 5, t h e k i n k mean f r e e path i s determined by 5
and hence the a c t i v a t i o n energy t o be observed under i r r a d i a t i o n E. and AE becomes Em + Edk - Er* and Er* - Edk/2, r e s p e c t i v e l y . From t h e same l o g i c a l c o h s i d e r a t i o n as
.. .
ma-de above, the r e l a t i o n s Edk $E; and dt > E > E - d;/2 a r e obtained. I f one evalu- m = t;
ates these i n e q u a l i t i e s , i t i s r e a l i z e d t h a t t h e values o f Ei o r t h e upper l i m i t s f o r E~~ a r e too small f o r t h e assumption Zk > 5 t o hold. Therefore t h e k i n k - c o l l i s i o n i s considered t o be t h e case w i t h a l l the i n v e s t i g a t e d d i s l o c a t i o n s . 4.4. D i s l o c a t i o n Levels
The evaluated recombination energies Er o r i t s lower 1 i m i t s Ep* a r e reason- a b l l y l e s s than t h e band- gap energy E o f t h e r e s p e c t i v e c r y s t a l s . A1 thoughg the d i s l o c a t i o n l e v e l s i n GaAs a r e f a r from established, some qua1 i t a t i v e discussion may be worthwhile.
The remarkable f a c t i s t h a t t h e mobi- l i t y o f @ - d i s l o c a t i o n i n GaAs i s s e n s i t i v e t o doping w h i l e t h a t o f a- d i s l o c a t i o n i n s e n s i t i v e /11/. The asymmetric r e s u l t o f t h e p o l a r bend- i n g suggested t h a t t h e a - d i s l o c a t i o n acts as a s t r o n g e r acceptor than t h e 8 - d i s l o c a t i o n /21/. These observa- t i o n s may l e a d us t o t h e p i c t u r e t h a t the acceptor l e v e l associated w i t h the @ - d i s l o c a t i o n i s l o c a t e d near the m i d d l e o f t h e energy gap w h i l e
t h a t o f t h e a - d i s l o c a t i o n near t h e F i g . 8 - Possible c o n f i g u r a t i o n coordinate valence band. This p i c t u r e i s diagrams r e l a t e d t o t h e n o n - r a d i a t i v e supported a l s o by a t h e o r e t i c a l c a r r i e r recombination event t o enhance t h e c a l c u l a t i o n by Jones e t a l . /22/ i f k i n k m i g r a t i o n . The k i n k m i g r a t i o n path the d i s l o c a t i o n core s t r u c t u r e i s along t h e r e a c t i o n coordinate Qp i s shown t h e g l i d e s e t ( t h e t e r m i n a t i n g atom by a d o t t e d curve.
o f t h e e x t r a - h a l f plane i s a r s e n i c f o r a - d i s l o c a t i o n and g a l l i u m f o r 8-di s l o c a t i o n )
.
The e f f i c i e n t n o n - r a d i a t i v e recombination a t t h e d i s l o c a t i o n s suggests a s t r o n g e l e c t r o n - l a t t i c e coup1 i n g a t t h e d i s l o c a t i o n l e v e l . F i g u r e 8 shows t h e c o n f i g u r a t i o n coordinate diagrams ( e l e c t r o n i c energy + e l a s t i c energy u vs c o n f i g u r a t i o n coordinate Q) r e l a t e d t o t h e paths t o be f o l l o w e d upon t h e c a r r i e r recombination and t h e a c t i - v a t i o n b a r r i e r along t h e r e a c t i o n c o o r d i n a t e . I n n-type c r y s t a l s t h e c a r r i e r recom- b i n a t i o n s t a r t s w i t h a capture o f an i n j e c t e d h o l e by t h e recombination c e n t e r occupied by an e l e c t r o n . Then the l a t t i c e i s r e l a x e d t o a d i f f e r e n t c o n f i g u r a t i o n t o achieve t h e minimal i n t e r n a l energy U through the multiphonon emission process.
As discussed above, t h e depth from t h e valence band t o t h e d i s l o c a t i o n l e v e l accept- i n g an e l e c t r o n ( i n d i c a t e d by E- i n F i g . 8 ) i s s m a l l e r i n t h e a - d i s l o c a t i o n than i n the @ - d i s l o c a t i o n , t h e n e t *energy E~ released upon t h e h o l e capture a c c o r d i n g l y tends t o be s m a l l e r i n t h e former than i n the l a t t e r . This agrees w e l l w i t h t h e t r e n d seen i n Table 1.
The recombination i s completed by t h e subsequent capture o f an e l e c t r o n over t h e b a r r i e r Bee. The a c t u a l values o f E~~ are considered t o be so small (suggested t o be ~ l r O eV for a - d i s l o c a t i o n , 0.04 eV for @ - d i s l o c a t i o n i n GaAs / 5 / ) t h a t t h e i n i t i a l charge s t a t e i s q u i c k l y r e s t o r e d t o be ready f o r f u r t h e r recombinations. This s i t u -
a t i o n t o g e t h e r w i t h t h e h i g h i n j e c t i o n l e v e l used i n t h e p r e s e n t experiments ensures successive recombinations a t t h e k i n k s i t e i n t h e course o f the double k i n k f o r m a t i o n 5 - CONCLUDING REMARKS
Since t h e f i r s t o b s e r v a t i o n o f the photomechanical e f f e c t i n germanium, t h e c o n f i r - m a t i o n o f t h e phenomenon was t r i e d by s e v e r a l i n v e s t i g a t o r s . However, some o f them d i d n o t reproduce t h e r e p o r t e d e f f e c t . I t s h o u l d be noted t h a t t h e t e s t s t h a t c a s t e d a doubt on t h e photomechanical e f f e c t were performed under r e l a t i v e l y l o w i l l u m i n a t i o n i n t e n s i t i e s o r a t h i g h temperatures, b o t h o f which may n o t have s a t i s - f i e d t h e c o n d i t i o n s t o observe t h e enhancement caused b y t h e REDM mechanism. I n an n-Gap s i n g l e c r y s t a l , a n o t h e r 111-V compound, i t was e v e r observed t h a t t h e growth r a t e o f d i s l o c a t i o n r o s e t t e s around an i n d e n t a t i o n was enhanced by an i n t e n s e l i g h t i l l u m i n a t i o n a t l o w temperatures /23/, which c o u l d n o t be e x p l a i n e d by a h e a t i n g e f f e c t . I n view o f these f a c t s , f u r t h e r s t u d i e s a r e necessary t o reexamine t h e enhancement e f f e c t o f d i s l o c a t i o n g l i d e i n semiconductors o t h e r t h a n the p r e s e n t m a t e r i a l s .
REFERENCES
E.g., KUCZYNSKI G.C., IYER K.R. and ALLEN C.W., J . Appl. Phys. 43 (1972) 1337 PETROFF P. and HARTMAN R.L., J . Appl. Phys.
5
(1974) 3899.YONEZU H., SAKUMA I., KAMEJIMA T., UENO M., NISHlDA N., NANNICHI Y . and HAYASHI I., Appl. Phys. L e t t . 24 (1974) 18.
MAEDA K. and TAKEUCHI S., Jpn. J . Appl. Phys.
3
(1981) L165.MAEDA K., SAT0 M.. KUBO A. and TAKEUCHI S., J. Appl. Phys. 54 (1983) 161.
MAEDA K. and TAKEUCHI S., Appl
.
Phys. L e t t .42
(1983) i n p r e s s .KUSTERS K.H. and ALEXANDER H., Proc. 1 2 t h I n t . Conf. on Defects i n Semicon- d u c o t r s (Amsterdam 1982), Physica B, t o be pub1 ished.
BOHM K. and FISCHER B., J. Appl. Phys. 50 (1979) 5453.
PETROFF P.M., LOGAN R.A. and SAVAGE A., Phys. Rev. L e t t .
44
(1980) 287.PATEL J.R. and CHAUDHURI A.R., Phys. Rev.
143
(1966) 601.CHOI S.K., MIHARA M. and NINOMIYA T., Jpn. J. Appl. Phys.
3
(1977) 737.WESSEL K. and ALEXANDER H., P h i l o s . Mag. 35 (1977) 1523.
IMAI M. and SUMINO K., P h i l o s . Mag. A
47
(1983) i n p r e s s . NINOMIYA T., J . Physique s u p p l .40
(1979) C6-143.NARAYANAMURTI V., LOGAN R.A. and CHIN M.A., Phys. Rev. L e t t .
9
(1978) 63.WEEKS J.D., TULLY J.C. and KIMERLING L.C.. Phys. Rev.
B E
(1975) 3286.SUM1 H., Proc. 1 6 t h I n t . Conf. on Physics o f Semiconductors ( M o n t p e l l i e r , 1982), Physica B, t o be p u b l i s h e d .
/18/ LANG D.V. and KIMERLING L.C., Phys. Rev. L e t t . 2 (1974) 489; f o r a r e v i e w see DEAN P.J. and CHOYKE W. J., Adv. Phys. 26 (1977) 1 .
I 1 9 1 E.g., KVEDER V.V., OSIPYAN YU. A., SCHROTER W. and ZOTH G., Phys. S t a t u s S o l i d i ( a ) 72 (1982) 701; f o r a r e v i e w see LABUSCH R. and SCHROTER W, D i s l o c a t i o n s i n S o l i d s , e d i t e d by Nabarro F.R.N. (North-Holland, Amsterdam), 1980, Vo1. 5, p. 127.
/20/ HIRTH J.P. and LOTHE J., Theory o f D i s l o c a t i o n s (McGraw-Hill
.
New York), 1968, p . 493.1211 GWINNER D. and LABUSCH J., J . Physique, suppl
. 9
(1979) C6-75./22/ JONES R., OBERG S. and MARKLUND S., P h i l o s . Mag. B s (1981) 839.
1231 MAEDA K., UEDA O., MURAYAMA Y . and SAKAMOTO K., J. Phys. Chem. S o l i d s 38 (1977) 1173.