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THE TEMPERATURE DEPENDENCE OF
DISLOCATION MOBILITY IN NaCl SINGLE
CRYSTALS UNDER IMPACT STRESSES
V. Kisel
To cite this version:
THE TEMPERATURE DEPENDENCE OF DISLOCATION MOBILITY IN NaCl SINGLE
CRYSTALS UNDER IMPACT STRESSES
V . P . K I S E L
Institute of Solid State Physics, Academy of Sciences of the
USSR, Chernogolovka, Moscow district 142432, U.S.S.R.
Abstract
-
T h e dislocation mobility in NaCl a t temperaturesT
= 4.2, 77 a n d 298 K under impact s t r e s s e s i s d i s c u s s e d in terms of con- servative and non-conservative motion of jogs on s c r e w components.T h e standard dislocation theory s u g g e s t s that high-velocity dislocation motion /1 to 121 i s principally different from that with low velocity V 112 to 1 5 both
in the dependence on temperature, 9, and on resolved s h e a r s t r e s s
&
.
It i s characterized by the dislocation v i s c o u s d r a g coefficientdetermined by the interaction of mobile dislocations with electrons and pho- n o n s
(
b i s the B u r g e r s vector modulus)/l to 121. T h e numerous experiments, however, indicate d e p a r t u r e s £ r o m the principal tenets of the theory:1. At high velocites often
v ~ / Z ; ~ ,
where 0 . 9 6 m g 4.7 /2,4,5,14/.2. E v e n if (1) i s fuifilled and the s t r e s s amplitudes a r e maximal c m a x - ( 1 . 5 to 600)
Tp
with the maximai duration t m- ^1(
1 0 - ~ toIO-^)
S. d B / d T a Oi s the yield point or the proportionality limit)
11
to 7,10,12,14,15/. 3: V in ( 1 ) i s still dependent on the concentration and the s t a t e of impu- rities, point defects /4,5,7/, the dislocation density /1 to 31, the type of mobile dislocations /2,4,12/ a n d the crystai orientations /IO/, the dislocation-loop s i z e s /2/ and the v a l u e s of/I;
a n d tm 171, T h e metals exhibit sensitivitymax
of V to magnetic field a n d its orientation with r e s p e c t to the vector
b
191. 4. T h e starting s t r e s s e sEst
/2,12,14/ a n d the delay times td 17,131 a r en
always characteristic of the dislocation motion. T h e mean dislocations always grow with up to the uitimate v a l u e s of starting with which a t -
a/C,,,
dislocations begin to multiply /5,7/.I V 1
-4
5. An i n c r e a s e of the strain rate
&
= 10 to 104 s-' d o e s not actually affect the c h a r a c t e r of the dislocation structure / l 6 / and i s , normally, foiiowed by a n increasing formation of v a c a n c i e s 117,181.T h u s , 1 to 5 and, a l s o /1,12 to 15,19/ indicate similarity of the mechanisms controiiing V ( ~ , T ) a t al1
/Z
a d T in different crystals. T h e effect of impact s t r e s s e s on mean pathlength z ( ~a n d mean number ) ~ and, d s o d Z/de(% ,T), rst(T),
gmax(c
,T)
andCM(*)
of mobile s c r e w disloca- tions in pure(c
= 0.5 M P ~ ) a n d impure(/i.
= 2 M P ~ ) NaCl singleP P
c r y s t a l s h a s been studied a t T = 298,77 and 4.2 K ( ~ i g s 1 to 4 ) using the
CIO-530 JOURNAL
DE PHYSIQUE
Fi0.1. Change of mean pathlength
e
(
)
,
the number of mobile dislocations n ( c
)
in pure NaCl at different fali heights H (mm) =2 0 0 ( 2 ) , 5 0 0 ( 3 ) , 1 0 0 0 ( 5 ) , 2000(7).
Tp
i s the proportionality limit, T = 298 K.techniques described in detail /6,7,13/. t
m z ~ - O ' l
( H i s the sample or the anvil fail height) and i s approximately constant along the length of the loaded samples/6,7/. At the loading end of the sample m - - ~ 0 ' 6(+
20%)
and i s decreasing linearly to zero a t the free end /6,7/. In pure NaCle s c r e w a t dl ?\ and
% ,
the s p r e a d of data points from sample to sample 121 increased with decreasing T . F i g s 1 to 2 presente ( ~ )
,
n ( / t ) T of mobile dislocations a tT = 29%, 4.2 K,
/C-
averaged a t H, t =m
const up to the beginning of multiplication a t
Z N I ( ~ ) .
T h e data a t 77 K a r e the same a s for 298 K. T h e data treatment in(
1)
yields B
(
4.2 K ) 7 B ( 298K)
7 B (77K ) ,
like in 13 to 71, however, ordy for one of 11 samples tested at 4.2 K B (4.2 K ) ( ( B ( ~ ? K ) , like in /2,8/. At al1 T c s t ~ b ( Z N I (O(=const) and
&(
) T
gr0wS synchronously withn
('ZJ
leTt
like it i s observed atZ
( T )113; Klsel, to b e published/. It i s ccara-P cteristîc that even if ( 1 ) i s fulfilled, there a r e usually revealed the regions of weak and strong sensitivi of
e
,
n to2
a t aii 'T', charaîterined by two different dependences d c / d % ( r , 'T') a t aii T and in crystals of different impurity content T h e dislocation c r o s s slip i s often observed, a s well as the motion of dislocations in the direction opposite to the acting force i s manifested 1131. Under impact s t r e s s e s the crystals a r e frectured a t 4.2 K, sometimes without the observable motion of dislocations. T h e s t r e s s of the .crack formationCF
i n c r e a s e s with a growth of the defor-d C
ming s t r e s s rate
6
(
insert in ~ i . g . 2 ) . Inasmuch as B % the data of F i g s 1 to 4 demonstrate al1 the diversity of the values and dependencesB
(
T ) in different NaCL. With a n increase of H ( o r6 )
dc/de
i n c r e a s e s monotonically with growing2:
irrespective of T for the weak-sensitivity region off ( <
),
whereas for the strong-sensitivity region of t f ( 2)
it initially increases, and then drops at all T. An increase of &max(c)'T' ( a n d of n) and increase-
then d e c r e a s e of d c / d i with growing.%
for individuai diçlo- cations ( ~ i g s 1,2) a r e anaiogous to crystal softening a t the 1 s t a g e of macro- deformation /15,20,21/ or to a negative rate sensitivity of the plastic flow at a n i n c r e a s e of&
( a n d dl T). In macroscopic c a s e d Z / d i i s analogous to the hardening coefficient. S u c h discrimination between the types of dislocation drag a t ultrasound loading w a s performed in 181, and the data of /9,13,22/ confirm the similarity of the mechanisms controiiing the mobility of dislocations a t different types of loading.3 2 8 0 ( 9 ) . Insert: the s t r e s s
TF
ofs
ming s t r e s s rate
6
.
c r a c k formation asafunction of defor-
Fi 3 Ultimate v a l u e s of the mean
*
dislocation pathlengths&
max
( b e f o r emultiplication) a s a function of s t r e s s ,
.
temperature, strain r a t e s a n d impuritycontent in different NaCl. c ~ 0 . 1 5 M P a
a
-6 1W - points 1,3-
tm- ( 2 02
5 ) 1 0 s , 2- t m 2 5 * 1 0 - ~ s 171;.Zp-
0.4 MPa: 4,5-
g t i 9 . 2 - 1 0 ' ~ s 171; ~ 0 . 5 M P a:
m 6,8,10-
t m ~ ( 2 5 ~ 7 ) 1 F 6 s ; c P z 2 MPa: -51 2
-
tm& ( 6 + 1 ) 1 0 s-
this work. 1 ' ( ~ ) ~ 3 0 0 ( 1 , 2 , 4 , 6 , 1 2 ) , 77 (3,5,8) a n d4.2 ( 1 0 ) .
r r
of the introduced dislocations a t
L
%L
M113; Kisel, to b e publishedl, a n d c s t r k
&
M, this means that unpinning,motion, d r a g a n d multiplication of dislo- cations, determining the plastic fiow d o n g the hardening curve, like in the region of smailer S a n d /12,13,15 to 211, a r e closely interconnected a n d a r e controlled by the s a m e mechaniçms. T h i s conclusion a g r e e s with
I l l /
too y h e r e it w a s shown that e v e n a t small S dislocations move a n d multiply along the deformation c u r v e a t times compa- rable with t(
H)
in this work. Only conset%ative a n d non-conserva- tive motion of jogs 1161 formed a t c r o s s s l i p s of s c r e w components 119,231 c a nZ,M~CI
b e the mechanismî providing hardening and softening of a wide c l a ç s ofthe
materials a t ail temperatures, s t r e s s e s , impurity concentrations as a function of5
1131. Intensification of the c r o s s s l i p with growing impurity content o r with d e c r e a s i n g T /13,19/ a g r e e s with a n appropriate i n c r e a s e of the dislocation d r a g from the data of Fig.3.Softening ( o r facilitation of the dislocation motion) c a n o c c u r d u e to a change of the height a n d concentration of jogs 1131 on dislocations with a change of
?'
-
Fig.3 ( 7 7 K ) a n d 113,231, deforming r a t e-
Fig.1, /15,20,21,23/, impurity concentration /13,15,20/ a n d crystal type 119,241.CIO-532
JOURNAL
DE
PHYSIQUE
with the conduction electrons a n d external magnetic field in this mode1 h a s to b e sensitive to the field magnitude a n d i t s orientation with r e s p e c t to the
+
vector b 191. T h e dislocation motion a n d multiplication in normal a n d super- conducting c r y s t a l s of Zn ( a n d ~ b confirms this 1261. )
REFERENCES
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a
( 1 9 8 3 )-
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( 1 9 7 9 ) 1172./9/ Galligan, J.M., S c r . Met.
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S O L
( a ) 7 3 ( 1 9 8 2 ) K 141.1151 ~ a v i d s o n , D.L., Lindholm, U.S., Mater. Sci. Eng.
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( 1 9 7 4 ) 29. /16/ Edington, J.W., Phil. Mag.19
( 1 9 6 9 ) 1189.1171 Klein, M.J., G a g e r , W.B., J. Appl. Phys.
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( 1 9 6 6 ) 4112. 1181 s o b , M., Buchar, J., Bucki, M., Mater. S c i Eng.65
( 1 9 8 4 ) L9.1191 Smirnov, B.I., Dislokatçionnaya struktura i uprochenie kristallov, Lenin- grad, Nauka
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( 1 9 6 5 ) 209; Ibid.21
(1967) 495. /21/ Argon, A.S. e t al, Phil. Mag.25
( 1 9 7 2 ) 1095.1221 K a r d a s h e v , B.K., Lebedev, A.B., Nikanorov, S.P., Cryst. Res. a n d
0
+
*'
@
=
Reciprocai value of mean pathlength sensitivity to s t r e s sd T / d
e
-
as a function of mean--.
-.
-.
s t r e s s
%
a n d i t s duration, T ina
--.
--
-
different NaCI. Designations of
2
---.
-.
-.
Fig.3 a n d additional points 7, 1 3 ( ~ o o K ) , 9 ( 7 7 ~ ) a n d 11 ( 4 . 2 ~ ) belong to the g r o u p s 6 to 11 and 12,13. C u w e 1 c o r r e ponds to the
weak-sensitivity of