HAL Id: hal-02945913
https://hal.archives-ouvertes.fr/hal-02945913
Submitted on 22 Sep 2020
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Switching Loss Estimation Using a Validated Model of 650 V GaN HEMTs
Joao Oliveira, Florent Loiselay, Hervé Morel, Dominique Planson
To cite this version:
Joao Oliveira, Florent Loiselay, Hervé Morel, Dominique Planson. Switching Loss Estimation Us- ing a Validated Model of 650 V GaN HEMTs. EPE’20 ECCE Europe, Sep 2020, Lyon, France.
�10.23919/EPE20ECCEEurope43536.2020.9215793�. �hal-02945913�
Output Characteristics
IDS (A)
0 20 40 60 80 100 120 140 160
VDS (V)
0 1 2 3 4 5
Experimental Vgs = 6 V Vgs = 5 V Vgs = 4 V Vgs = 3 V Vgs = 2 V Datasheet Vgs = 6 V Vgs = 5 V Vgs = 4 V Vgs = 3 V Vgs = 2 V
Simulation Vgs = 6 V Vgs = 5 V Vgs = 4 V Vgs = 3 V Vgs = 2 V
Capacitance Characteristics
Capacitance (F)
1p 10p 100p 1n 10n
VDS (V)
0 100 200 300 400 500
Ciss (exp) Ciss (simu) Ciss (data)
Coss (exp) Coss (simu) Coss (data)
Crss (exp) Crss (simu) Crss (data)
Static ON-Resistance
Rds(on) (m
20 30 40 50 60
VGS (V)
3 4 5 6
RDS (datasheet) RDS (simulation) RDS (experimental)
Static ON-Resistance
Rds(on) (m
20 30 40 50 60
IDS(A)
0 20 40 60 80 100 120
Experimental Datasheet Simulation VG= 5 V
Experimental Datasheet Simulation VG = 6 V
Before leakage current test Vgs = 2 V
Output Characteristics
IDS (A)
0 2 4 6 8 10 12
VDS (V)
0 1 2 3 4 5
After leakage current test Vgs = 2 V
Vgs =3 to 6 V
Vgs =0 and 1 V
VGS (V) -10
-5 0 5
Time (s)
0 50n 100n 150n 200n 250n Gate-source Voltage - Low Side Switch
VGS (V) 0 5
Time (s)
0 50n 100n 150n 200n 250n VDS = 400 V VDS = 300 V VDS = 200 V VDS = 100 V Turn-on
Turn-off V (V)DS
0 100 200 300 400
Time (s)
0 50n 100n 150n
Drain-source Voltage - Low Side Switch
VDS (V) 0 100 200 300 400
Time (s)
0 50n 100n 150n
VDS = 400 V VDS = 300 V VDS = 200 V VDS = 100 V Turn-on
Turn-off
IDS (A) 0 10 20
Time (s)
0 50n 100n 150n 200n
Drain-source Current - Low Side Switch
IDS (A) 0 20 40 60
Time (s)
0 50n 100n 150n 200n
VDS = 400 V VDS = 300 V VDS = 200 V VDS = 100 V Turn-on
Turn-off
Gate Current - Low Side Switch
IG (A) 0 0,5
Time (s)
0 100n 200n 300n 400n
VDS = 400 V VDS = 300 V VDS = 200 V VDS = 100 V Turn-on
Turn-off IG (A)
-0,5 0 0,5
Time (s)
0 100n 200n 300n 400n
fosc =19.7 MHz
Gate-source Voltage - Low Side Switch
VGS (V) -5
0 5
Time (s)
0 10n 20n 30n 40n
Without Ig Probe With Ig Probe
Turn-on
Turn-off
fosc = 21.2 MHz VGS (V)
-5 0 5
Time (s)
0 10n 20n 30n 40n 50n
VDS (V) 0 100 200 300 400
Time (s)
0 20n 40n 60n
Drain-source Voltage - Low Side Switch
VDS (V) 0 100 200 300 400
Time (s)
0 50n 100n
VDS (s. simu) VDS (probe+LGloop) VDS (Q3D matrix) VDS (exp) Turn-on
Turn-off
Drain-source Current - Low Side Switch
IDS (A) 0 20 40 60
Time (s)
0 20n 40n 60n 80n
IDS (s. simu) IDS (probe+LGloop) IDS (Q3D matrix) IDS (exp) Turn-on
Turn-off IDS (A)
-5 0 5 10 15 20
Time (s)
0 20n 40n 60n 80n 100n 120n
Switching Losses - Low Side Switch
PSW (V) 0 5k 10k 15k 20k
Time (s)
0 20n 40n 60n 80n
PSW (s. simu) PSW (probe+LGloop) PSW (Q3D matrix) PSW (exp) Turn-on
Turn-off
PSW (V) -1k
0 1k 2k
Time (s)
0 20n 40n 60n
