Class-A Operation of InAs Quantum Dash-based Vertical-External-Cavity Surface-Emitting Laser

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Class-A Operation of InAs Quantum Dash-based

Vertical-External-Cavity Surface-Emitting Laser

Salvatore Pes, Kevin Audo, Cyril Paranthoen, Christophe Levallois, Nicolas

Chevalier, Goulc’Hen Loas, Steve Bouhier, Cyril Hamel, Carmen Gomez,

Jean-Christophe Harmand, et al.

To cite this version:

Salvatore Pes, Kevin Audo, Cyril Paranthoen, Christophe Levallois, Nicolas Chevalier, et al.. Class-A Operation of InAs Quantum Dash-based Vertical-External-Cavity Surface-Emitting Laser. Conference on Lasers and Electro-Optics (CLEO 2017), May 2017, San Jose, United States. OSA (ISBN: 978-1-943580-27-9), OSA Publishing, Tuesday Posters Session (JTu5A), pp. JTu5A.109, 2017, CLEO: Applications and Technology 2017. �10.1364/CLEO_AT.2017.JTu5A.109�. �hal-01532491�

CLEO 2017

S. Pes

1,*

_{, K. Audo}

1

_{, C. Paranthoën}

1

_{, C. Levallois}

1

_{, N. Chevalier}

1

_{, G. Loas}

1

_{, S. Bouhier}

1

_,

C. Hamel

1

_{, C. Gomez}

2

_{, J.-C. Harmand}

2

_{, S. Bouchoule}

2

_{, H. Folliot}

1

_{and M. Alouini}

1

1

_{FOTON, UMR CNRS, INSA Rennes, Université de Rennes 1, 35708 Rennes, FRANCE}

2

_{Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Sud, 91360 Marcoussis, FRANCE}

*

_{salvatore.pes@insa-rennes.fr}

Class-A Operation of InAs Quantum Dash-based

Vertical-External-Cavity Surface-Emitting Laser

OP-QDH-VECSEL design and process

SiN

AR coating reflectivity

① InAs quantum dash-based (QDH) active region (3 sets

x 6 layers) growth on (001)-oriented InP substrate by

Gas-Source Molecular Beam Epitaxy

② Metamorphic growth of 17 pairs of

GaAs/Al

_0.97

Ga

_0.03

As Distributed Bragg Reflector

(λ

_Bragg

= 1600 nm) + Au layer deposition

③ Au-Au bonding on CVD-grade diamond heat-spreader

and InP substrate + InGaAs stop-etch layer wet etching

④ SiNx anti-reflection coating (λ

_AR

≈1600 nm) deposition +

flip-chip mount on a thermally-controlled copper heat-sink

2x2 µm

_{AFM image of the 1}

_uncapped

layer of a set of InAs quantum dashes

Active region TEM cross-section

(3 sets x 6 InAs QDH layers on

In

Ga

As

P

barriers)

InP

GaAs

InAs

QDH sets

Optical intensity field inside the structure

Polarization-resolved RT PL spectra of SQWs (black)

and QDHs (

red

,

blue

)

Applications

MICROWAVES:

• RADAR/LIDAR systems

• Ultra low-noise sources

• Dual-frequency lasers

• THz generation

METROLOGY:

• High resolution spectroscopy

• High pure optical reference

signal distribution

• Time/frequency metrology

Realization of an optical laser source with high spectral

purity, low intensity noise and highly tunability for

microwave photonics and coherent communication systems

Motivations

Conclusion

Demonstration of a Class-A Optically-Pumped InAs Quantum

Dash-based Vertical-External-Cavity Surface-Emitting Laser on InP.

MM-emission: P

_out

= 163 mW @ P

_inc

= 7 W, T=20°C

SM-emission: P

_out

= 10.4 mW @ P

_inc

= 1.1 W, T=19.5°C, 32 nm tuning

Polarization stably aligned along dash [1-10] direction, OPSR = 39 dB

Laser linewidth estimation: 22 kHz (49 mm-long cavity)

Phase noise: -110 dBc/Hz @ f > 200 kHz (free-running)

Class-A operation: f

_c

= 800 kHz, RIN = -158 dB/Hz (I

_phd

= 2 mA)

Funding

ANR and DGA within the ANR-ASTRID

HYPOCAMP project (grant

ANR-14-ASTR-0007-01) and a DGA-MRIS/Région Bretagne

scholarship (grant ARED-VELOCE 8917).

Future perspectives

Dual-frequency operation

Laser stabilisation on ULE cavity (metrology)

Electrical pumping

Single-frequency wavelength tuning

Laser characterization

Output characteristics and emission spectra

Multi-mode emission

T = 20°C

Single-mode emission

T = 19.5°C

ω

_MM-pump

= 145 µm x 210 µm

ω

_SM-pump

= 80 µm x 120 µm

Laser linewidth and phase noise

References

S. Pes et al., "Class-A Operation of an Optically-Pumped 1.6 µm-emitting

Quantum Dash-based Vertical-External-Cavity Surface-Emitting Laser on

InP", Opt. Express 25(10), 11760-11766 (2017)

Polarization-resolved SM-emission

Class-A operation