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Submitted on 1 Jan 1974
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Cole-cole diagram of the non linearised relaxation equation
G. de Mey
To cite this version:
G. de Mey. Cole-cole diagram of the non linearised relaxation equation. Journal de Physique, 1974,
35 (11), pp.867-868. �10.1051/jphys:019740035011086700�. �jpa-00208211�
867
COLE-COLE DIAGRAM
OF THE NON LINEARISED RELAXATION EQUATION
G. DE MEY
Laboratory
ofElectronics,
Ghent StateUniversity, Ghent, Belgium (Reçu
le 14 mars1974,
révisé le 29 mai1974)
Résumé. 2014 On dérive une
équation générale
décrivant lephénomène
de relaxation dans lesdiélectriques.
On a tenu compte de l’abaissement dupotentiel
par l’effetSchottky.
Au contraire dece que l’on fait
généralement, l’équation
obtenue n’est paslinéarisée;
l’influence de ce fait estclairement
indiquée
sur lediagramme
de Cole-Cole.Abstract. 2014 In this paper a
general equation
for the relaxation mechanism in dielectrics is derived. Thelowering
of thepotential
barrier due to theSchottky
mechanism has been taken into account. Theequation
is not linearised as isusually
done and the influence of this fact isclearly
demonstratedby
the Cole-Colediagram.
LE JOURNAL DE PHYSIQUE TOME 35, NOVEMBRE 1974,
Classification
Physics Abstracts
8.740
In many dielectrics a relaxation mechanism deter- mines the dielectric
properties [1].
Similarproperties
have also been observed on
evaporated
SiO dielec- tricscontaining
mobile ions[21
and measurements with diffèrent electrode materials indicate the exis- tence of surfacetraps
for these mobile ions[3].
Inorder to describe the dielectric
properties,
a theoretical model has beenproposed
in which the ions can relax between thetraps
located at the two electrodes[4].
Let
nA(nB)
be the average number of ions in atrap A(B),
we may write(Fig. 1) :
where
PAB(PBA)
denotes the transitionprobability
ofa
jump
from A to B(B
toA)
per unit time. These transitionprobabilities depend
upon thepotential
barrier which the
charged particles
must overcome.Using
Boltzmannstatistics,
we have(Fig. 1) :
C is assumed to be a constant. This
implies
that oncea
charge
haspassed
over thepotential
barrier thereis zero
probability
that the ion falls back into thesame state
[4].
An extension of this can be found in the literature[5].
The energydiagram
under influence of an electric field E =Yja
is shown onfigure
1. Thepotential
barriers are loweredby
an amountA({J
dueto the
Schottky
mechanism :LE JOURNAL DE PHYSIQUE. - T. 35, No Il, NOVEMBRE 1974
FIG. 1. - Energy diagram for mobile ions illustrating relaxation
between two states A and B.
The zero level for
WA
andWB
has been chosen toobtain the
symmetrical expressions :
Using (4); (5)
and(6),
pAB and pBA read :Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphys:019740035011086700
868
The
charge
measured on thecapacitor
will be propor- tional toQ
= nA - nB. The totalnumbers
of ionsN = nA + n,
being
a constant, we obtain :For a
sinusoidally varying voltage V
cos rot,(9)
hasbeen solved
numerically.
The dielectric constants s’and s" were calculated from the first harmonic compo- nents of the solution
Q(t)
and results for some valuesof 13
and V are shown infigure
2. Thetop
of the Cole- Colediagram
lieshigher when f3
increases.Experi-
mental results obtained
using evaporated
SiO capa- citors indicate thecontrary [6].
This can beexplained by introducing
a suitableprobability
distribution function for the relaxation time T, since thetop
of the Cole-Colediagram
is then lowered[7], [8], [9].
In our
experiments
the influence of theSchottky
mechanism on the Cole-Cole
diagram
isentirely
masked
by
the distribution of the relaxation times.However,
time constant measurements, made on thesame SiO
capacitor, clearly
indicate the existence ofa
Schottky
mechanism[10].
In order to detect a
Schottky
mechanism one shouldnot use a Cole-Cole
diagram
because other mechanisms mask the effect. A time constant measurement of the response to avoltage step
is then recommended.FIG. 2. - Cole-Cole diagrgm for a relaxation mechanism involving the Schottky effect for various values of 8 and voltage amplitudes (in volt). e’ and e" are normalised to 8’ = 1 for
OJ = 0 and V = o.
References
[1] ANDERSON, J. C., «Dielectrics» (Science Paperbacks, London) 1967, p. 67.
[2] ARGALL, F. and JONSCHER, A. K., Thin Solid Films 2 (1968)
185-210.
[3] SWYSTUM, E. J. and TICKLE, A. C., IEEE Transactions on
Electron Devices ED-14 (1967) 760-764.
[4] VAN CALSTER, A. and PAUWELS, H. J., Thin Solid Films 7 (1971) R17-20.
[5] PAUWELS, H. J. and DE MEY, G., Phys. Stat. Sol. (to be published).
[6] DE WILDE, W., J. Physics E (scientific instruments) 6 (1973) 619-622.
[7] COLE, K. S. and COLE, R. H., J. Chem. Phys. 9 (1941)
341-351.
[8] Fuoss, R. M. and KIRKWOOD, J. G., J. Amer. Chem.
Soc. 63 (1941) 385-394.
[9] DE MEY, G., Lettere al Nuovo Cimento 9 (1974) 670.
[10] DE WILDE, W. and DE MEY, G., Phys. Stat. Sol. a 20 (1973) K147-K149.