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Semiconductor saturable absorber mirror structures with low saturation fluence

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Figure

FIGURE 2 Calculated group-delay dispersion (solid) and enhancement factor ξ (dashed) as a function of operation wavelength for ‘standard’
FIGURE 5 Refractive-index structure (solid) and calculated standing wave intensity pattern for λ = 1314 nm (dashed) of a ‘classical’ SESAM device structure close to the surface of the device
FIGURE 10 Calculated group-delay dispersion (solid) and enhancement factor ξ (dashed) as a function of operation wavelength for an E-SESAM structure
Figure 11 shows the measurement of nonlinear reflectivity as a function of fluence incident on the samples [27], fitted

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