Adjusted Adashi’s Model of Exciton Bohr Parameter and New Proposed Models for Optical Properties of III-V Semiconductors

h = z/a is the dimensionless height of the dipoles above the plane of their images, a a characteristic length for the net (e. the nearest neighbour dis- tance

Based on these results, we have used the tight-binding method to study the band structure and the absorption spectra of III-N nanowires. The following conclusions have

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Abstract : A first-principles calculations have been performed, using the Full Potential Linearized Augmented Plane Wave (FP-LAPW) calculations based on Density Functional Theory

A first-principles calculations have been performed, using the Full Potential Linearized Augmented Plane Wave (FP- LAPW) calculations based on Density Functional Theory (DFT) method

Having shown that the PLAP gives reliable analysis of compound semiconductors, we have begun a study of composition variations in ternary and quaternary materials.. These are

A different behaviour characterizes the alloys Fig.5 Calculated free energy of m!xing (A) and phase dominated by the elastic deformation energy dlagrams (0) for

From photoemission spectra, we can obtain informations about the electronic structure in the vicinity of the surface, such as binding energies of component atoms, the density