Analysis of Large Impurity Atmospheres at Dislocations and Associated Point Defect Reactions in Differently n-Doped GaAs Crystals

D. NONCOMMUTATIVE STRUCTURE OF GaAs QUANTUM WELL INTERFACES AND INEQUIVALENT INTERFACE IMPURITY INCORPO- RATION.. NONCOMMUTATIVE STRUCTURE OF GaAs QUANTUM WELL INTERFACES ANI)

On the identification of the double donor state of EL2 in p type GaAsA.

This study combines 12 5Te Môssbauer spectroscopy and electron micro- scopy to examine heavily Te-doped GaAs both in the as-grown state and after various heat

solidly pins the Fermi level at mid-gap and, as will be discussed in section 6.2, only defects at the clusters outskirts can have an observable influence on

The different contributions to the present issue give an update on the understanding concerning this defect in the mid-1987 ; it includes EL2 related device

Influence of hydrogen on minority carrier recombination at dislocations and sub-boundaries in GaAs.. Castaing,

stacking fault energy by doping GaAs was found up to 1273 K ; no clear influence of the temperature. was found in spite of what is expected

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