Recent developments in the study of the EL2 defect in GaAs

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Submitted on 1 Jan 1988

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Recent developments in the study of the EL2 defect in GaAs

H.J. von Bardeleben, B. Pajot

To cite this version:

H.J. von Bardeleben, B. Pajot. Recent developments in the study of the EL2 defect in GaAs.

Revue de Physique Appliquée, Société française de physique / EDP, 1988, 23 (5), pp.726-726.

�10.1051/rphysap:01988002305072600�. �jpa-00245877�

Recent developments ^{in the} study of the EL2 defect in GaAs

Introduction

The

development

^{of the GaAs}

integrated

^circuit technology

requires

^the

production

^{of a material}

adequate

for

semi-insulating

substrates. This has now currently ^{been achieved}

by

^the growth ^of

undoped

^GaAs crystals by ^the

liquid encapsulated

Czochralski method. The electrical

resistivity

^of this material is dominated by ^the presence of a native

deep

donor defect EL2 which compensates the shallow

impurities

present ^{in their material. This has been a} strong motivation to study ^this defect in the last 10 years ; but it is

only recently ^{that the} understanding ^{of its}

microscopic

^structure has advanced

significantly.

This incited us to collect the new information obtained in the last two years ^on this

subject

^{in a} special issue of the Revue de

Physique

Appliquée. ^The different contributions to the present ^issue give ^an

update

^{on the} understanding concerning ^{this defect in the} mid-1987 ; it includes EL2 related device

properties (S.

Miyazawa

et al. ),

^the

characterization of EL2 as a native defect as well as its distribution is the ingot

(Y.

Mochizuki et al. ; ^M.

Bonnet et al. ; ^{J. P.}

Fillard),

^the optical ^and

optically

^induced metastable

properties (M.

Kaminska, ^B.

Dischler et

al. ),

^the modelization of the atomic structure of EL2

(D.

Stievenard et al. ; ^{B. K.} Meyer ; ^{G. A.}

Baraff),

^{defect reactions} involving ^EL2

(G.

^{Guillot ; S.} Makram-Ebeid

et al.)

^and, finally, ^a critical look at the different EL2 models

(J.

^C.

Bourgoin

^et

al.).

The editors of this

special

^{issue wish to} thank the authors who have

kindly

accepted ^to contribute to this volume and they hope ^{that this}

update

of EL2 will stimulate further research on this exciting ^defect.

H. J. von Bardeleben, ^B.

Pajot

Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/rphysap:01988002305072600