Optimization of Optical Gain in InxGa1-xSb/GaSb unstrained quantum wellstructures for detection

(c) Raman wavenumbers of the 1-LO peak as a function of the laser power for the 5.5-nm PbSe nanocrystal film and a bulk PbSe sample.. (d) Raman wavenumbers of the 1-LO phonon mode as

In this work, we study the nonlinear propagation of light in liquid crystals (LCs) and the optical gain provided by LCs when they are polymer- or dye-doped.. We will focus on

Fig.. modes of the SSQW expected on the basis of presently known behavior of the GaAs and A10,32Ga0.68As optical phonon branches. A detailed discussion of the

The new observations are: Rayleigh-gain lasing with no external mirrors using the distributed feedback of counterpropagating pump beams, Rayleigh- gain lasing

This system was chosen as it is useful in infrared emission, finally, we introduce the optimum structure of quantum well to obtain the maximum optical gain, at room temperature

This system was chosen as it is useful in infrared emission, finally, we introduce the optimum structure of quantum well to obtain the maximum optical gain, at room temperature and

This paper is devoted to a strained GaSb-A1Sb single quantum well structure obtained by the confinement of a GaSb layer between two AlSb spacer layer (1).. We

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