Nonlinear characterization of GeS 2 – Sb 2 S 3 – CsI glass system
K. Fedus, G. Boudebs, Q. Coulombier, J. Troles, and X. H. Zhang
Citation: Journal of Applied Physics 107, 023108 (2010); doi: 10.1063/1.3289607 View online: http://dx.doi.org/10.1063/1.3289607
View Table of Contents: http://scitation.aip.org/content/aip/journal/jap/107/2?ver=pdfcov Published by the AIP Publishing
Articles you may be interested in
Nonlinear optical properties of IV-V-VI chalcogenide glasses AIP Conf. Proc. 1512, 546 (2013); 10.1063/1.4791153
New far-infrared transmitting Te-based chalcogenide glasses J. Appl. Phys. 110, 043536 (2011); 10.1063/1.3626831
Nonlinear optical studies on nanocolloidal Ga–Sb–Ge–Se chalcogenide glass J. Appl. Phys. 108, 073525 (2010); 10.1063/1.3481097
Antimony orthophosphate glasses with large nonlinear refractive indices, low two-photon absorption coefficients, and ultrafast response
J. Appl. Phys. 97, 013505 (2005); 10.1063/1.1828216
Third order nonlinearities in Ge - As - Se -based glasses for telecommunications applications J. Appl. Phys. 96, 6931 (2004); 10.1063/1.1805182
Reuse of AIP Publishing content is subject to the terms at: https://publishing.aip.org/authors/rights-and-permissions. Download to IP: 193.52.40.1 On: Tue, 03 May 2016
Nonlinear characterization of GeS
2– Sb
2S
3– CsI glass system
K. Fedus,1,a兲 G. Boudebs,1Q. Coulombier,2J. Troles,2and X. H. Zhang2
1POMA, FRE CNRS 2988, Université d’Angers, 2 Bd Lavoisier, 49045 Angers Cedex 01, France
2UMR CNRS 6226, “Sciences Chimiques de Rennes,” Université de Rennes I, 35042 Rennes Cedex, France
共
Received 24 October 2009; accepted 10 December 2009; published online 28 January 2010兲
We present the results of Z-scan measurements共
1064 nm, 17 ps兲
of nonlinear refractive indices and nonlinear absorption coefficients for different compositions of chalcogenide glasses in GeS2– Sb2S3– CsI system. We show that the simple well known Boling, Glass, and Owyoung model based on the theory of the semiclassical harmonic oscillator can be a useful tool for theoretical predictions of the nonlinear refractive index in these infrared glasses. A quasi-linear behavior is observed relating the nonlinear index and the linear one. Some of the compositions reveal properties potentially useful for all optical switching applications. © 2010 American Institute of Physics.关doi:10.1063/1.3289607兴
I. INTRODUCTION
The amorphous glasses based on the chalcogen elements
共
S, Se, and Te兲
are well known for possessing a large optical nonlinear refraction combined with an infrared transparency1,2and, hence these materials are promising can- didates for linear and nonlinear optical elements. Therefore, many different compositions, binary as well as ternary, have been fabricated and studied in order to optimize optical prop- erties for a wide range of possible applications. For example, the optical switching applications require high nonlinear re- fractive index共n
2兲
and low nonlinear absorption coefficient共
兲
while the optical limiting proprieties need both high n2 and coefficients. It is also important to have simple theo- retical expressions allowing to predict the magnitude of non- linearities and hence facilitating the choice of glass compo- sitions with the desired optical properties. It was found experimentally共chapter 4 in Ref.
1 and references inside兲, that n2 and increase with the linear refractive index共n
0兲
and the normalized photon energy共h
/Eg, where h is the Planck’s constant,is the incident photon frequency, and Eg the energy band gap of the material兲. Results of Z-scan3mea- surements published in our previous works dealing with tellurium4 and germanium5 based chalcogenide glasses are consistent with this tendency. Therefore, the general trend in the nonlinearity is accounted for by the linear refractive in- dex and the normalized photon energy, hence both n0 and h/Eg should be decisive parameters in the theoretical esti- mation of nonlinearities. However, the theory of nonlinear optical absorption共
兲
in amorphous materials and insulators is still a field of investigation6 on the contrary of that in crystals which has been better understood based on the band theory.7 One of the problems in the case of amorphous ma- terials is the definition of Egsince the absorption edge is not sharp as in crystals and the interpretation of the band gap is ambiguous.8,9The estimation of n2on the basis of the linear optical index would be preferable because no ambiguity in the measurements of n0 can appear especially in the trans- parency region. One of the n2 predictive capabilities is pro-vided by Boling, Glass, and Owyoung
共BGO兲.
10On the basis of a semiclassical model of the simple harmonic oscillator and the dispersion of linear refractive index, they derived the so-called BGO model giving an expression relating n2 with n0. Despite its simplicity, the BGO formula stays in suffi- ciently good accuracy with experimental results for different oxide and tungstate fluorophosphates glasses.11,12The aim of this paper is to present the results of nonlin- ear characterization for a family of chalcogenide glasses, namely the bulk GeS2– Sb2S3 glass forming system doped with halide, CsI. The latter component has been chosen in order to enlarge the band gap and consequently to decrease the linear and nonlinear absorption at the infrared region. We will show that the BGO model can be a useful tool for quick and accurate theoretical prediction of the nonlinear refractive index for this investigated family of chalcogenides.
II. EXPERIMENTS
The different compositions were prepared according to the method described in.13 High purity materials
共99.999%
for Ge, Sb, S and 99.99% for CsI
兲
are used for the glass preparation in silica tube under vacuum共
10−5 mbar兲
. The sealed silica tube is heated to 850 ° C in a rocking furnace and maintained 10 h at this temperature to ensure a good reaction between the starting materials and a good homog- enization of the melt. The glass is obtained by quenching the tube in water and by annealing the sample near its glass temperature, before cooling down to room temperature in order to release stresses induced by quenching. The glass is then cut into disks of about 1mm thick, which are then pol- ished to obtain two parallel faces.The measurements of n2 and  have been done using modified Z-scan method inside a 4f imaging system
共Fig.
1兲.Excitation is provided by a neodymium doped yttrium alu- minum garnet
共Nd:YAG兲
laser delivering linearly polarized 17 ps single pulses at 1064 nm. The focal length of the two lenses composing the 4f system is f1= f2= 20 cm. The beam waist at the focal plane is 0= 35 m giving a Rayleigh range z0= 3.5 mm. The latter value is larger than 1 mm, the typical thickness of the samples. The photoreceptor is aa兲Electronic mail: kamil.fedus@univ-angers.fr.
共 兲
0021-8979/2010/107共2兲/023108/5/$30.00 107, 023108-1 © 2010 American Institute of Physics
Reuse of AIP Publishing content is subject to the terms at: https://publishing.aip.org/authors/rights-and-permissions. Download to IP: 193.52.40.1 On: Tue, 03 May 2016
1000⫻1018 pixels cooled
共
−30 ° C兲
charge-coupled device共
CCD兲
camera with fixed linear gain. The camera pixels have 4095 gray levels and each pixel is 12⫻12 m2. Open and closed aperture Z-scan normalized transmittance can be nu- merically processed from the acquired images, by integrating over all the pixels of the CCD camera in the first case and over a circular numerical filter in the second one. To avoid the contribution of any permanent linear change of the re- fractive index attributed to photo-induced effects共PIE兲, a
shutter is mounted at the input of the setup letting only one laser-shot-interaction with the material for each step of the Z-scan motor. The overall repetition rate is about 0.1 to 0.2 Hz depending on the size of the acquired images共to be
stored to the hard disk兲. To check the absence of the perma- nent PIE, three sequential Z-scan acquisitions, in the linear, the nonlinear, and again in the linear regime were carried out illuminating the sample on the same impact region. No photo-induced modifications were observed as in14 for the considered bulk material in this paper. Moreover, recently we showed that it is possible to characterize the permanent lin- ear modification inside the sample after relatively long illu- mination in the focal region.15 In the Z-scan analysis, here the number of impacts is reduced to approximately five laser shots along the Rayleigh range and the intensity was chosen carefully in order to obtain a sufficient signal in the Z-scan traces without photo-inducing other permanent measurable linear modifications inside the glasses.Moreover, we have reported on Z-scan absolute measurements16 of nonlinear refractive index in CS2 and fused silica
共SiO
2兲, two references materials generally used
in nonlinear experiments to calibrate the incident intensity in the focal plane. We obtained absolute values 7.5 times less than those usually given in the literature at 1064 nm in the picosecond regime. Here the calibration of the intensity in the focal plane of our Z-scan setup was done using fused silica and considering n2= 4⫻10−21 m2/W as obtained in our absolute measurements in reference.16It should be added that for comparison purpose n2and given here have to be multiplied by a factor 7.5 in order to obtain the equivalent of the nonlinear coefficients when the calibration is done taking into account the n2= 3⫻10−18 m2/W of CS2 found in.3The optical absorption measurements performed with a UV-visible-near IR spectrometer
共CARY500兲
show negli- gible linear absorption in the infrared region for all the com- positions and particularly at 1064 nm. The energy band gap共E
g兲
was determined from absorption spectra as the wave- length for which the linear absorption coefficient is equal to 10 cm−1. The linear refractive indices were measured at two wavelengths, 1331 and 1551 nm, using a polarized laser with TE incidence in a Metricon prism coupler system.III. RESULTS AND DISCUSSION
The results of the Z-scan measurements of the investi- gated glasses and the measured linear optical coefficients are summarized in TableI. The n2values are given in column 5
共within the parenthesis the ratio of n
2 to that of the fused silica兲. The nonlinearity of the investigated glasses is at least 50 times higher than that of the fused silica. Sample J exhib- its the highest nonlinear refraction index. A careful revision of the experimental data shown in TableIcould suggest that the optical properties of the investigated glasses depend strongly on the antimony共Sb兲
content. One can notice an improvement of n2, with a redshift of the optical gap共col-
umn 8兲 and an increase in the linear refractive index共col-
umns 9 and 10兲
with the amount of Sb2S3共
column 3兲
. A similar behavior has been already observed in Refs.17 and 18dealing with linear and nonlinear optical properties of the glass-host system xGeS2−共
1 − x兲
Sb2S3, respectively.CCD
f1 f1 f2
L1 L2
L3
M1
Sample BS1
BS2
f2
z' y x
M2
0 +z -z
FIG. 1. Schematic of the 4f imaging system. The sample is moved around the focal region. The labels refer to lenses共L1-L3兲, mirrors共M1, M2兲, and beam splitters共BS1, BS2兲.
TABLE I. Compositions of the investigated glasses共GeS2+ Sb2S3+ CsI兲and their optical coefficients: column 5, n2共within the parenthesis the ratio of n2to that of the fused silica兲; column 6,, and column 7 the figure of merit 2/n2at= 1064 nm共h= 1.17 eV兲. The normalized photon energies共h/Eg兲 together with the linear refractive indices measured at 1331 nm and 1551 nm are shown in the last three columns.
No
Percentage composition Optical coefficients
GeS2 Sb2S3 CsI n2共10−19 m2/W兲 共10−2 cm/GW兲 2/n2 h/Ega n0共1331 nm兲 n0共1551 nm兲
A 90% 10% 0 2.0⫾0.4共50兲 ⬍0.2 ⬍0.22 0.470 2.146 2.140
B 75% 10% 15% 3.6⫾0.9共90兲 1.0⫾0.4 0.6 0.560 2.154 2.146
C 51.25% 26.25% 22.5% 3.9⫾0.6共97.5兲 2.0⫾0.4 1.08 0.571 2.274 2.265
D 66.25% 26.25% 7.5% 3.9⫾0.6共97.5兲 1.0⫾0.3 0.54 0.556 2.303 2.293
E 35% 35% 30% 4.7⫾0.7共117.5兲 3.0⫾0.7 1.36 0.584 2.309 2.299
F 42.5% 42.5% 15% 5.6⫾1.8共140兲 3.0⫾1.0 1.14 0.590 2.420 2.408
G 26.25% 51.25% 22.5% 7.5⫾2.2共187.5兲 10⫾1 2.84 0.622 2.457 2.444
H 10% 60% 30% 9.0⫾2.0共225兲 19⫾2 4.50 0.629 2.484 2.469
I 26.25% 66.25% 7.5% 9.7⫾1.9共242.5兲 20⫾2 4.38 0.660 2.619 2.602
J 10% 75% 15% 10.8⫾3.0共270兲 16⫾5 3.16 0.652 2.646 2.629
aEgis defined as the energy for which the linear absorption coefficient is 10 cm−1
023108-2 Feduset al. J. Appl. Phys.107, 023108共2010兲
Reuse of AIP Publishing content is subject to the terms at: https://publishing.aip.org/authors/rights-and-permissions. Download to IP: 193.52.40.1 On: Tue, 03 May 2016
Changes in n2 by ⬇400% were observed when varying x from 10% to 40%. Recently,5it was shown that in Ge–Sb–S systems, the nonlinear refractive index is correlated with a number of heteropolar Sb–S and Ge–S bonds and n2 is en- hanced with decreasing Ge/Sb ratio. A careful analysis show that n2 decreases with increasing Ge/Sb ratio for the glasses investigated here. The deviation from this tendency can be attributed to CsI component. Generally, the introduction of halide component reduces the linear refraction and moves the energy gap toward the blue region of the visible spectrum.19 Therefore, higher amounts of CsI elements should decrease the nonlinear refractive index.
In the column 7 of TableI, we give the figure of merit
共
FOM兲
defined as 2/n2.20 It is a geometry-independent factor widely adopted in the literature to classify different nonlinear materials for optical switching or optical limiting applications. According to reference,20 all optical switching capabilities require a FOM⬍1 in order to avoid large losses induced by nonlinear absorption. It can be seen that samples A, B, and D fulfill this criterion. The other samples seem to be more appropriate for optical limiting applications. How- ever, the expected diminution ofat the telecommunication wavelength共1550 nm兲, where most of the optoelectronic de-
vices operate, could give lower values of FOM.21 In Fig.2, we show the FOM versus the normalized photon energy. As it is pointed out in Refs. 22 and 23, the FOM in chalco- genides depends on the proximity of the light frequency totwo-photon absorption edge and it reaches a minimum for h/Eg just below 0.5. Our experimental results agree with this observation.
From the optical point of view the nonlinearities in chal- cogenides are correlated with the optical gap and the linear refraction. On the one hand, high third order susceptibility in chalcogenide glasses is attributed to their high n0accordingly to the Miller’s generalized rule.2On the other hand there are many experimental results revealing an increase in nonlin- earities with h/Eg for different families of chalcogenide glasses
共see, for example, Refs.
22–24兲. Figures 3共a兲 and 3共b兲show n2 and as a function of the normalized photon energy for our specimens. The observed variations confirm the strong dependence on absorption gap for a fixed excita- tion wavelength. The interdependence of nonlinearities on n0 and Eg comes from the fact that the linear refractive index and energy gap are generally related. In crystals the correla- tion between n0 and Eg is usually expressed by the Moss rule25 stating that n0=␥/Egx, wherex= 0.25 and␥ is a mate- rial dependent constant. In amorphous materials as chalco- genide glasses a similar behavior between n0 and Eg also seems to be valid. In Fig.4, we can see the refractive index at 1064 nm versus the energy gap for our specimens共filled
circle兲as well as for another two families of chalcogenides, namely tellurium共empty circles兲 关4兴
and germanium共stars兲 关5兴
based glasses. In all cases, the energy band gap is defined0.450 0.5 0.55 0.6 0.65 0.7
1 2 3 4 5
h/Eg
2/n2
FIG. 2. Figure of merit defined as/n2versus normalized photon energy 共h/Eg兲.
0.450 0.5 0.55 0.6 0.65 0.7
0.2 0.4 0.6 0.8 1 1.2 1.4x 10-18
n2(m2 /W) a)
h/Eg
b)
h/Eg (10-2 cm/GW)
0.450 0.5 0.55 0.6 0.65 0.7
5 10 15 20 25
FIG. 3. Variations of共a兲n2and共b兲as a function of the normalized photon energy共h/Eg兲.
1.2 1.4 1.6 1.8 2 2.2 2.4
2 2.2 2.4 2.6 2.8 3
Eg
n0
FIG. 4. Linear refractive index共n0兲at 1064 nm vs the energy gap共Eg兲for GeS2+ Sb2S3+ CsI glass system共filled circle兲as well as for tellurium共empty circles兲 共Ref.4兲and germanium共Ref.5兲 共stars兲based chalcogenide glasses.
Reuse of AIP Publishing content is subject to the terms at: https://publishing.aip.org/authors/rights-and-permissions. Download to IP: 193.52.40.1 On: Tue, 03 May 2016
as the wavelength for which the linear absorption coefficient is 10 cm−1. The values of n0 at 1064 nm in the glasses in- vestigated here were obtained from the experimental data at 1331 and 1551 nm using the dispersion model described in Eq.
共2兲 共given below兲. The dashed line in Fig.
4is the best fit to the experimental data of n0=␥/Egx共obtaining
x= 0.37 and␥= 3.1 when Egis expressed in eV兲. The absolute values ofx and␥are not important because these coefficients are depen- dent on the energy gap definition, which is ambiguous in amorphous materials. However, this modified Moss relation is to be considered as a rough approximation in order to show a general tendency in the relationship between Eg and n0. This dependency permit us
共
i兲
to use indifferently one these parameters to predict the nonlinearities and共ii兲
to ex- plain qualitatively why a model共as the one to come hereaf-
ter兲using only one of these parameters can be considered as valid from the physical point of view.We have chosen the linear refraction data as the basic input to estimate the nonlinear refraction indices because the measurement of n0 is not ambiguous in the transparency re- gion. The BGO model10 offers such an advantage. This model assumes that the third order hyperpolarizability is pro- portional to the square of the linear polarizability. It supposes also that the linear optical dispersion of the medium is deter- mined by only one resonance frequency 0 and the fre- quency of the light is far away from the resonance
共
Ⰶ0兲. Moreover the dielectric response should have a pure
electronic nature. The nonlinear refractive index expressed in SI units is given byn2
共m
2/W兲=共gS兲共n
02+ 2兲2共n
02− 1兲212n02cប0
共NS兲
,共1兲
whereg is a dimensionless anharmonity parameter, S is the effective oscillator strength, N is the ion density depending on the composition, and cis the speed of light. The linear refractive index for a wavelength fulfils the following ex- pression:
1 3
共n
02+ 2兲共n
02− 1兲= 02−2共
e2/me0兲共
NS兲
,共
2兲
where0is the vacuum permittivity,eandmeare the charge and the mass of the electron, respectively. The parameters NS and 0 are obtained from the values of n0
共
= 1331 nm兲and n0
共
= 1551 nm兲measured for each sample.Then, the values ofNSand0are introduced into Eq.
共1兲
to determine n2. The best agreement with experimental data was obtained for a scaling factorgS= 0.59. The comparisons of the experimental and the theoretical values are shown in Fig.5as a function of the linear refractive index at 1064 nm.The values of n0
共
= 1064 nm兲 were determined using Eq.共2兲
with the values ofNSand0obtained for each sample. A very good agreement is found between the experimental and theoretical values. Note that due to the new calibration the obtained value ofgSis approximately 7.5 less than the ones adopted upto now. The latter values共between 3 and 4.5兲
have been always chosen empirically in order to fit the experimen- tal results. Anyway the effect of the calibration produces only a vertical shift into the predicted n2values but does not change the variation inside Fig. 5. Moreover note that the presence of the nonlinear absorption does not affect the pre- dictions of the BGO model.IV. CONCLUSION
We have measured the nonlinear refractive indices
共
n2兲
and the nonlinear absorption coefficients共
兲
for GeS2– Sb2S3– CsI chalcogenide glasses. We have confirmed that the nonlinear refractive index behavior is closely related to the linear one. Following this property, we have shown that the BGO model could be a useful tool to estimate n2 values. A very good agreement with the experimental data is obtained. Three compositions among ten inside investigated glass family have a figure of merit 2/n2⬍1, thus they can be suitable candidates for optical switching applications.1A. Zakery and S. R. Elliott, Optical Nonlinearities in Chalcogenide Glasses and their Applications共Springer, New York, 2007兲.
2V. G. Ta’eed, N. J. Baker, L. Fu, K. Finsterbusch, M. R. E. Lamont, D. J.
Moss, H. C. Nguyen, B. J. Eggleton, D. Y. Choi, S. Madden, and B.
Luther-Davies,Opt. Express15, 9205共2007兲.
3M. Sheik-Bahae, A. A. Said, T. H. Wei, D. Hagan, and E. W. Stryland, Quantum Electron.26, 760共1990兲.
4S. Cherukulappurath, M. Guignard, C. Marchand, F. Smektala, and G.
Boudebs,Opt. Commun.242, 313共2004兲.
5L. Petit, N. Carlie, H. Chen, S. Gaylord, J. Massera, G. Boudebs, J. Huc, A. Agarwal, L. Kimerling, and K. Richardson,J. Solid State Chem.182, 2756共2009兲.
6K. Tanaka,J. Non-Cryst. Solids338–340, 534共2004兲.
7M. Sheik-Bahae, D. J. Hagan, and E. W. Van Stryland,Phys. Rev. Lett.65, 96共1990兲.
8N. F. Nott and E. A. Davis, Electronic Processes in Non- Crystalline Materials, 2nd ed.共Oxford University Press, Oxford, 1979兲.
9K. Morigaki, Physics of Amorphous Semiconductor 共Imperial College, London, 1999兲.
10N. L. Boling, A. J. Glass, and A. Owyoung,IEEE J. Quantum Electron.
14, 601共1978兲.
11E. L. Falcão-Filho and B. Cid,J. Appl. Phys.96, 2525共2004兲.
12C. B. de Araújo,Appl. Phys. Lett.87, 221904共2005兲.
13L. Calvez, H.-L. Ma, J. Lucas, and X.-H. Zhang, Adv. Mater.19, 129 共2007兲.
14K. Fedus, G. Boudebs, Cid B. Araujo, M. Charpentier, and V. Nazabal, Appl. Phys. Lett.94, 061122共2009兲.
15K. Fedus and G. Boudebs,J. Opt. Soc. Am. B26, 2171共2009兲.
16G. Boudebs and K. Fedus,J. Appl. Phys.105, 103106共2009兲.
17L. Petit, N. Carlie, F. Adamietz, M. Couzi, V. Rodriguez, and K. C. Rich- ardson,Mater. Chem. Phys.97, 64共2006兲.
18L. Petit, N. Carlie, K. Richardson, A. Humeau, S. Cherukulappurath, and G. Boudebs,Opt. Lett.31, 1495共2006兲.
19M. Guignard, V. Nazabal, A. Moreac, S. Cherukulappurath, G. Boudebs, H. Zeghlache, G. Martinelli, Y. Quiquempois, F. Smektala, and J.-L.
n0
n2(m2 /W)
2.1 2.2 2.3 2.4 2.5 2.6 2.7
0 0.2 0.4 0.6 0.8 1 1.2 1.4x 10-18
FIG. 5. Comparison between experimental n2data共filled dots兲and values calculated from the BGO formula Eq.共1兲共stars兲.
023108-4 Feduset al. J. Appl. Phys.107, 023108共2010兲
Reuse of AIP Publishing content is subject to the terms at: https://publishing.aip.org/authors/rights-and-permissions. Download to IP: 193.52.40.1 On: Tue, 03 May 2016
Adam,J. Non-Cryst. Solids354, 1322共2008兲.
20V. Mizrahi, K. W. Delong, G. I. Stegeman, M. A. Saifi, and M. J. An- drejco,Opt. Lett.14, 1140共1989兲.
21C. Quémard, F. Smektala, V. Couderc, A. Barthelemy, and J. Lucas, J.
Phys. Chem. Solids62, 1435共2001兲.
22J. M. Harbold, F. O. Ilday, F. W. Wise, and B. G. Aitken,IEEE Photon.
Technol. Lett.14, 822共2002兲.
23J. M. Harbold, F. O. Ilday, F. W. Wise, J. S. Sanghera, V. Q. Nguyen, L. B.
Shaw, and I. D. Aggarwal,Opt. Lett.27, 119共2002兲.
24J. S. Sanghera, C. M. Florea, L. B. Shaw, P. Pureza, V. Q. Nguyen, M.
Bashkansky, Z. Dutton, and I. D. Aggarwal,J. Non-Cryst. Solids354, 462 共2008兲.
25N. K. Sahoo, S. Thakur, and R. B. Tokas,J. Phys. D39, 2571共2006兲.
Reuse of AIP Publishing content is subject to the terms at: https://publishing.aip.org/authors/rights-and-permissions. Download to IP: 193.52.40.1 On: Tue, 03 May 2016