Modelling of a Cd1?xZnxTe/ZnTe SingleQuantum Well for Laser Diodes

At higher temperature (>10 K), dark transport evolves from an inter-well tunneling regime to a thermo-ionic one with a corresponding activation energy E a of 18

We have taken into account the effect of carrier density, alloy composition, temperature and wells width on the optical gain as well as threshold current density. The use of ZnTe as

Charge density and plasmon modes in a triangular quantum well model for doped and undoped gated AlGaN/GaN HEMTs... Charge density and plasmon modes in a triangular quantum well

We present investigations of modulation of the absorption in InGaAs/In& modulation doped single quantum well structures used as conducting channel in field effect

The arrows indicate the widths 'w' at which de Sterke and Hall predict zero splittings using an envelope-function approximation (EFA) for the ground states of

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

than the initial power density threshold of the planar sample. This indicates that the nonlinear refractive index and the cavity finesse are not degrated by the etching process, so

The aim of our work is to confirm the correlation beetween electrical noise signature and optical power noise of strained quantum well lasers, in order to control the in