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Modeling and simulation of ZnxCd1-xTe/ZnTequantum well structure for laser applications

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Optik - International Journal for Light and Electron Optics

Volume 135, Issue 1, 2017, Pages 153-159

Modeling and simulation of ZnxCd1-xTe/ZnTe quantum well structure for laser applications

S.Dehimi L.Dehimi, T.Asarcd B.Mebarkie S.Özçelikcd

Abstract: In this work, we modeled and simulated aZnxCd1-xTe/ZnTe based single quantum well structure. We have taken into account the effect of carrier density, alloy composition, temperature and wells width on the optical gain as well as threshold current density. The use of ZnTe as a barrier leads to the improvement of the carrier confinement such as Qc (83%)/Qv (17%). Then, we have optimized the quantum well structure that allows obtaining a threshold current density Jth = 500 A/cm2. This study allowed us to achieve laser diodes VCSEL quantum well reliable and emitting around 0.740 ?m.

Keywords : Quantum well Semiconductor laser Gain ZnCdTe Optoelectronics

Centre de Recherche en Technologies Industrielles - CRTI - www.crti.dz

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