• Aucun résultat trouvé

Modeling and simulation of In0.15 Ga0.85 N/GaNstrainquantum well structure for solar cellsapplication

N/A
N/A
Protected

Academic year: 2021

Partager "Modeling and simulation of In0.15 Ga0.85 N/GaNstrainquantum well structure for solar cellsapplication"

Copied!
1
0
0

Texte intégral

(1)

6éme conférence internationale en soudage, contrôle non destructifs et matériaux et alliages industriels (IC-WNDT-MI’18)

2018

Modeling and simulation of In0.15 Ga0.85 N/GaN strainquantum well structure for solar cells

application

S. Dehimi, S. Kahla, A. Kellai, L.Kaba, N.Hammouda, A.Boutaghane

Abstract : Quantum well solar cells based on III-V nitride semiconductor materials are a great technological interest by means to their physical and optical properties. In this study the effect of quantum well number on the characteristics (J-V), (P-V) and efficiency for the structure GaN/In 0.15 Ga0.85 N/ GaN was studied. our result showed that, the increase in the number of wells is accompanied by the increase of the light current density and the efficiency, for example with 50 wells we found Jight = 14(mA /cm2) and a efficiency 28%.

Keywords : Quantum well, solar cell, GaN, InGaN

Centre de Recherche en Technologies Industrielles - CRTI - www.crti.dz

Powered by TCPDF (www.tcpdf.org)

Références

Documents relatifs

After annealing, absorbers obtained from Cu-poor precursors yield solar cells with effi- ciencies around 4 as exposed in Chapter1 [ 133 ] whereas absorbers from Cu-rich precursor do

Applying this quantitative model to realistic solar cell designs combining Si and III–V materials, we first find that an appropriate tandem design of thinned GaAs on Si can deliver

Photon recycling in strain balanced quantum well solar cells grown on distributed Bragg reflectors has been observed as a suppression of the dark current and a change in

reliées à l'entretien de, la maison et de la famille leur reviennent lOl • Lors de la Seconde Guerre mondiale, des tâches comme participer à la récupération

The relation between planar graphs and these intersections graphs goes back to the PhD thesis of E.R. He proved that outerplanar graphs belong to PURE-3-DIR and he conjectured

Dans les Chapitres 3 et 4 nous nous intéressons à l'existence et à l'unicité des me- sures stationnaires de ces dynamiques PCA, ainsi qu'à la caractérisation de leurs

In terms of three-junction cells, Spectrolab supplanted the 1-sun record efficiency for a solar cell with a lattice-matched GaInP/GaInAs/Ge triple-junction cell of 32.0%

The durability of each component of a PEMFC is affected by many external factors in an operating fuel cell, including the fuel cell oper- ating conditions (such as