ww AA

CDSEM

TRANSISTORS Si

ww AA

TRANSISTORS Ge ^{CIRCUITS INTEGRES}

iw

1968

Compagnie g énérale des Semi - conducteurs

S.A

.

A UC A P I T A LD E 1 8 4 0 0 0 0 0 F S I E G ES O C I A L:S T-E G R E V E(I S E R E) R.C

.

N*6 0 B 4 4 G R E N O B L E

S E R V I C E S C O M M E R C I A U X 7 8,A V E N U EM A R C E A U

-

^{7 5}

-

^{P A R I S(8°) T E L}

.

^{3 5 9 0 7}

-

^{8 9}

TRANSISTORS GERMANIUM GERMANIUM TRANSISTORS

I AMPLIFICATION B . F . FAIBLE NIVEAU

LOW NOISE A . ^F . AMPLIFICATION

FAIBLE BRUIT

LOW LEVEL

P

V_ç-g^{m a x} C m a x m a x fT h₂₁e

Boftier Case

Nature

Type ^tôt

(V) (mA) (mW) (MHz⁾

3

\

100 ⁽1mA - 6 V - 1kHz⁾ 150

P Ge A 100

TO-5 15

SF

.

^{T 237}/ ACY 38

Il AMPLIFICATION ET COMMUTATION FAIBLE VITESSE

AMPLIFICATION AND LOW SPEED SWITCHING

Vc

^{g m a x}

^fh

^{21 b} h

(MHz⁾ P. .m a x

Boît i e r Case

Qm a x 2 1E

Nature

Type tôt

(V) ^{(mA) (}

^mW

⁾ h_{2 1e}

*

80

M l

mA

-

^{6 V}

-

¹kHz⁾

30 150 225 3

TO-5 P Ge A SF

.

^{T 253}

80 (100mA

-

^{1 V )}

P Ge A 30 250 225 4

SF

.

^{T 223 TO- 5}

60 (

100

mA -1 V) 45

M l

^mA

-

^{5V - 1kHz)}

60 500 225 2

TO-5 P Ge A SF

.

^{T 243 /ASY 81}

H

500 225 2

TO

-

^{5 P Ge A}

2N 525 45

65

*

^{(1 mA}

-

^{5 V}

-

^1kHz)

P Ge A 500 225 2, 5

TO- 5

2N 526 45

H

80

*

⁽1mA

-

^{5 V}

-

^1kHz)

TO-5 P Ge A 500 225 3

,

5

2N 527 45

45

*

^{(1 mA}

-

^{5 V}

-

^{1 kHz)}

P Ge A 60 500 225

TO-5 1/5

2N 1924

65

*

^{(1 mA}

^-

^{5 V -1kHz)}

P Ge A 60 500 225 2,5

TO-5 2N 1925

80

*

^{( 1 mA - 5 V- 1kHz)}

500 225 3

P Ge A 60

TO- 5 2N 1926

H :HOMOLOGATIONC

.

^C

.

^T

.

Ill AMPLIFICATION MOYENNE PUISSANCE

MEDIUM POWER AMPLIFICATION

P

VC E O^{m a x} !

c

^{m a x m a x} h_{2 1 E}

Boît i e r Case

Nature ^{t o t}

Type

(MHz⁾ (mW)

(V) (A)

60(1 A - 0

,

5 V)

500

0,7

30 3

P Ge A T0-5A

SF

.

^{T 232}

60( 1 A -0, 5 V)

500 0,7

4 0 3

P Ge A TO-5A

SF

.

^{T 233}

60( 1 A

-

^{0,5 V)}

500 0,7

50 3

P Ge A T 0-5A

SF

.

^{T 234}

60(1 A -0

,

5 V⁾ 0

,

7

500

60 3

TO-5A P Ge A SF

.

^{T 234A}

50( 1 A

-

^{0,5 V)}

400 0

,

7 40

P Ge A 3

T 0

-

^5A

2N 1039 H

50^{( 1 A}

-

⁰

^,

5 V⁾ 0

,

7

50 3

400

P Ge A

T 0-5A 2N 1040

H

50⁽1 A

-

^{0,5 V)}

0,7 60 3 400

P Ge A TO-5A

2N 1041

H

H:HOMOLOGATION ^C

.

^C

.

T

.

A -- A l l i e

A l l o y ^l

\

P

-

^{PNP Minimum}

TRANSISTORS GERMANIUM GERMANIUM TRANSISTORS

IV TRANSISTORS ALLIES PNP H . F .

H . F . ALLOY PNP TRANSISTORS

fh

2 1b

Boftier C a s e

T y p e Nature VQ g m a x ICm a x Ptôtm a x

*

^{T 1 Ii2 1 E}

(V) (m A) (mW) (MHz⁾

35

\

(1 0 rnA - 0

,

5 V) 50

\

(10 mA - 0,5 V) 7

,

5

*

30

S F

.

^{T 227 T O-5 P Ge A 250 150}

12

*

150

SF

.

^{T 228 TO-5 P Ge A 24 250}

75

\

(10 mA - 0,5 V ) 40

\

(400m A -0,35 V )

254

SF

.

^{T 229 TO-5 P Ge A 18 250 150}

14

*

SF

.

^{T 288} TO-5 P Ge A 24 500 150

30

\

(10 mA - 1 V ) 30

A

⁽10m A

-

^{1 V)}

TO

-

^{5 30 2 0 0} 150

2N 396 P Ge A 9

5

\

T O

-

^{5 P Ge A 30 2 0 0 150}

2N 396A

40

\

(10 mA - 1 V) 30

\

⁽12 m A - 0,15 V⁾ 20

\

(10 mA -1 V )

40 A

(10 mA - 1 V⁾ 60

\

(10m A - 1 V ) 8 0

A

(10 mA - 1 V )

P Ge A 30 200 150

2N 397 TO-5 13

2N 404 T O- 5 P Ge A 25 100 150 1 2

H

2N 1303 T O-5 P Ge A 30 300 150 5

300 150 10

2N 1305 T O- 5 P Ge A 30

H A

T O-5 30 300 150

2N 1307 P Ge A 15

H A

TO-5 P Ge A 30 300 150 20

2N 1309 H A

30

A

^(20mA

- VCB

T O-5 P Ge A 30 300 = 0)

ASY 26 125

m

6

\ *

⁵⁰

^A

^{(20 m A}

-

^{Vç g 0)}

T O-5 P Ge A 300

ASY 27 25 125

H :HOMOLOGATION C

.

C

.

T

.

A :C

.

^C

.

^Q

.

^{(C o n t rô}l e C e n t r a l i s e de Q u a l i té)

V TRANSISTORS ALLI ^É S NPN H . F .

H . ^F . ALLOY NPN TRANSISTORS

f h2 1 b Boftier

C a s e

I

Ptotmax

N a t u r e A r t

T y p e V_ç

g m a x

ç

-

^{m a x}

f T *

^h2 1 E

(V) (m A⁾ ( mW) (MHz)

35

A

⁽350mA -0

,

45 V ) 15

*

500 150 TO-5 N Ge A 30

SF

.

^{T 298}

60

A

⁽30m A

-

^{0, 5 V)}

150 17

25 200 T O-5 N Ge A

2N 388

20

A

⁽1 0 mA - 1 V) 150 10

25 300 T O-5 N Ge A

2N 1302

40

A

(10 mA

-

1 V )

150 15

25 300 T O-5 N Ge A

2N 1304

60

A

^{(10rnA - 1 V)} 20

300 150 25

N Ge A T O- 5

2N 1306

80

A

⁽10 mA -1 V)

150 25

25 300 T O- 5 N Ge A

2N 1308

4

A *

³⁰

^A

^{(20 mA}

-

^{Vç g - 0)}

30 300 1 2 5

TO- 5 N Ge A ASY 28

50

A

^{(2 0m A}

-

^{Vç g - 0)}

6

A *

300 125

2 5 TO

-

^{5 N Ge A}

ASY 29

* _ A l Ii e

A A l l o y

A

N

-

^{N P N Mini m u m}

P -- P N P

TRANSISTORS GERMANIUM ^GERMANIUM TRANSISTORS

VI TRANSISTORS DE PUISSANCE - 3 A ^/ 6 A ^/ 10 A

POWER TRANSISTORS

* *

P m a x

fT

BoTtier Case

!_C h21 E

Type Nature

VC

B^{m a x m a x tôt}

(V^{) (}A⁾ ( W ) (MHz⁾

50 (2 A- 2 V)

SF

.

^{T 214}

/

AUY 33 TO-3 P Ge A 60 3 45 0,5

50(2 A- 2 V) 0,5

SF

.

^{T 250}

^/

^{AU Y 32 TO-3 P Ge A 80 3 45}

50 (2 A- 2 V)

SF

.

^T

211

/ ADY 28 TO-3 P Ge A 80 6 45 0

,

5

35(5 A - 2 V⁾

SF

.

T 239

/

AUY 31 TO-3 P Ge A 60 6 45 0

,

5

35 (5 A

-

^{2 V)}

SF

.

^{T 240}

^/

^{AUY 30 TO-3 P Ge A 100 10 45 0}

^,

⁵

15

A

⁽6 A

- V C B

^{~ 0)}

10 30

ASZ 15 TO

-

^{3 P Ge A 100 0}

^,

³

35

A

(6 A

-

^{VC B“0)}

ASZ 16 TO-3 P Ge A 60 10 30 0

,

3

20

A

⁽⁶ A

-

^V

0,3

60 30 _CB ^“

°

⁾

ASZ

17

TO

-

^{3 P Ge A 10}

20

A

(6 A

- VCB

^{= 0)}

100

ASZ 18 TO

-

^{3 P Ge A 10 30 0,3}

VII TRANSISTORS DE PUISSANCE ^- 15A

POWER TRANSISTORS

* *

P m a x

Bo^ît i e r Case

Nature

Type

VCB

(V^{m a x})

>

C(^mA^{a x}) ^tô(W )^t

*

_(MHz^{h 21 b}₎ ^h2 1 E

45(5 A - 2 V) 0

,

3

SF

.

^{T 265 TO-36 P Ge A 40 15 87}

45(5 A - 2 V)

SF

.

T 266 TO-36 P Ge A 60 15 87 0,3

45 (5 A

-

^{2 V)}

80 0,3

SF

.

^{T 267 TO}

-

^{36 P Ge A 15 87}

100 45⁽5 A- 2 V⁾

SF

.

^{T 268 TO-36 P Ge A 15 87 0, 3}

35⁽5 A

-

^{2 V)}

80

2N1358 ^TO-36 P Ge A 15 87 0,2

2N 1100 TO-36 P Ge A 100 15 87 0,3 35(5 A- 2 V)

A l l ié A l l o y

A

- ^{** A}

P = PNP ^{tc a s e} 25

°

^{C Min i m u m}

VIII RADIATEURS POUR TRANSISTORS DE PUISSANCE

HEATSINKS FOR POWER TRANSISTORS

T y p e N 3 N 4 N 5 N 7

R_th

° c

/

w

3,8 1,8 0

,

8 50

L 98 116 225 25

90

50 120 25

Dimensions m m

h 29 30 40 9

Masse

W e i g h t g 90 220 620 1

,

7

BoTtiers

Cases ^TO

-

³

_

_TO

-

^{36 TO}

^-

⁵

C S F

-

S e r v i c e I n d u s t r i e l d u E d i t i o n- M u r a t P r i n t e di nF r a n c e

TABLEAU

80

- CARACTERISTIQUES

_DES

SEMICONDUCTEURS

PROFESSIONNELS

«

Cosem »

T R A N S I S T O R S B A S S E F R É Q U E N C E A U G E R M A N I U M

V _ _ _max

i

Pc ^max

(

mW

)

fh h Nature max

Type Bo î tier

CB C

^îL

(

V

) (

mA

)

( MHz)

21b

h

2 1 e

* SF .T 125 P B PGe A 30 500 350 2 70

⁽

250 mA

-

1 V

⁾

SF . T 131 P Ba P Ge A 30 500 550 2 70

⁽

250 mA

-

1 V

⁾

SF . T 143 B P Ge A 45 500 350 1 30

⁽

250 mA

-

1 V

⁾

SF . T 144 B P Ge A 45 500 350 1

,

8 60

⁽

250 mA

-

1 V

⁾

SF . T 145 Ba P Ge A 45 500 550 1 30

⁽

250 mA

-

1 V

⁾

SF . T 146 Ba PGe A 45 500 550 1

,

8 60

⁽

250 mA

-

1 V

⁾

SF . T 221 TO

-

5 P Ge A 30 250 225 1

,

3 30

(

100 mA

-

1 V

)

SF . T 222 TO

-

5 P Ge A 30 250 225 2 50

⁽

100 mA - 1 V

⁾

SF . T 223 TO

-

5 P Ge A 30 250 225 4 80

(

100 mA

-

1 V ) SF . T 232 TO

-

1 1 PGe A 40 1000 450 0

^,

3 45 ⁽ 1 A

-

0

,

5 V ⁾ SF . T 233 TO

-

11 P Ge A 60 1000 450 ⁰

^,

3 45

⁽

A 1

^-

0

^,

5 V

⁾

SF . T 234 TO

^-

11 P Ge A 80 1000 450 0

,

3 4 5

⁽

1 A

-

0

,

5 V

)

SF . T 234 A TO

-

11 P Ge A 80 1000 450 0

,

3 45

⁽

^{1 A}

^-

0

,

5 V

⁾

SF . T 237 TO

-

5 PGe A 15 100 150 3 A 100 *

⁽

^{1 mA - 6 V}

^-

^{1 kHz)}

SF . T 241 TO

-

5 PGe A 45 500 225 1

,

6 45

⁽

100 mA

-

1 V

)

SF . T 242 TO

-

5 P Ge A 45 500 225 2

,

5 70

(

100 mA - 1 V

)

SF . T 243 TO

-

5 P Ge A 60 500 225 2 60

(

100 mA

-

1 V

)

2N 525 TO

^-

5 P Ge A 45 500 225 2 45 * ^{( 1 mA - 5 V}

^-

^{1 kHz}

⁾

2N 526 TO

^-

5 PGe A 45 500 225 2

,

5 65 *

⁽

^{1 mA}

^-

^{5 V}

^-

^{1 kHz}

⁾

2N 527 TO

-

5 PGe A 45 500 225 3

^,

5 80 *

⁽

^{1 mA}

^-

^{5 V - 1 kHz)}

2N 1924 TO

^-

5 P Ge A 60 500 225 ¹

^,

⁵ 45 *

⁽

^{1 mA}

^-

^{5 V}

^-

^{1 kHz)}

2 N 1925 TO

-

5 P Ge A 60 500 225 2

,

5 65 *

⁽

^{1 mA}

^-

^{5 V}

^-

^{1 kHz}

⁾

2N 1926 TO

^-

5 P Ge A 60 500 225 ³ 80 *

⁽

^{1 mA}

^-

^{5 V - 1 kHz )}

A

=Minimum P=PNP A=Allié

T R A N S I S T O R S D E P U I S S A N C E A U G E R M A N I U M

V _ _ _max

T

lc ^{max P}

^L

^max

( W

)

**

Type Bo î tier Nature

^CB

( V ) ( A ⁾ fh

^21b

^h

21E (

MHz)

SF . T 211 TO

^-

3 PGe A 80 6 45 0

,

5 * 50

(

2 A - 2 V ) SF . T 212 TO

-

3 PGe A 30 3 30 0

,

5 * 40

⁽

2 A - 2 V

)

SF . T 214 ^{TO - 3 P Ge A 60 3 45 0}

^,

⁵ * 50

⁽

2 A - ^{2 V)}

SF . T 239 TO

^-

3 P Ge A 60 ^{6 45} 0

,

5 * 35

(

5 A - 2 V ⁾ SF . T 240 TO

-

3 ^{PGe A 80 6 45 0}

^,

⁵ * 35

(

5 A - ^{2 V}

⁾

50

(

2 A - 2 V ⁾ SF . T 250 TO

-

3 P Ge A ^{80 3 45} 0

,

5 *

45

(

5 A - ^{2 V}

⁾

SF . T 265 TO

^-

36 PGe A 40 15 87 0

,

3

45

(

5 A - 2 V ⁾ SF

.

T 266 TO

-

36 P Ge A 60 15 87 0

,

3

45

(

5 A - ^{2 V}

⁾

SF .T 267 TO

-

36 P Ge A 80 15 87 0

,

3

45

(

5 A - 2 V

)

SF . T 268 TO

-

36 P Ge A 100 15 87 0

,

3

40 (2 A - ^{2 V}

⁾

2N 297 A TO

-

3 P Ge A 60 4 35 0

,

3

30

(

5 A - ^{2 V}

⁾

2 N 441 TO

-

36 P Ge A 40 15 87 0

^,

3

35

(

5 A - 2 V )

2N 1100 TO

-

36 PGe A 100 15 87 0

^,

3

35

(

5 A - ²

^“

^V

⁾

TO

-

36 P Ge A 80 87 0

,

2

2N 1358 15

A=Minimum

= 25°^C

* *

^tcase (G^{) P=PNP A =Allié}

T R A N S I S T O R S H A U T E F R E Q U E N C E A U G E R M A N I U M

2 1b

h

V

max ^j_ max

P

_ max

2 1E

C B

c

^C

Type Boîtier Nature

(

V

^{) (}

mA

^{) (}

mW

⁾ (

MHz f

T

*

⁾

h

2 1e

*

25 A

⁽

10 mA

^-

0

,

5 V

⁾

SF

.

T 2 2 6 TO

^-

5 P Ge A 40 250 150 5

^,

5 *

35

A (

10

mA^-

0

,

5 V

⁾

SF

.

T 2 2 7 TO

^-

5 P Ge A 30 250 150 7

,

5 *

50 A

⁽

10 mA

- 0,

5 V

)

SF

.

T 2 2 8 TO

^-

5 P Ge A 24 250 150 1 2 *

75 A

⁽

10 mA

-

0

,

5 V

)

SF

.

T 2 2 9 TO

^-

5 P Ge A 18 250 150 25 *

40 T

⁽

400 mA

^-

0

,

35 V

)

SF

.

T 2 8 8 TO

^-

5 P Ge A 24 500 1

50

16 *

35

A (

350 mA

-

0

,

45 V

)

SF

.

T 2 9 8 TO

^-

5 N Ge A 30 500 150

15

*

80 *

⁽

^{1 mA}

^-

^{9 V}

^-

^{1 kHz}

⁾

SF

.

T 3 1 5 TO

^-

4 4 P Ge D ^{40 10} 120 30 *

180 *

⁽

^{1 mA}

^-

^{9 V}

^-

^{1 kHz}

⁾

SF

.

T 3 5 7 P TO

^-

4 4 P Ge D 30 10 120 80 *

90 *

⁽

¹

^,

^{5 mA}

^-

^{12 V}

^-

^{1 kHz}

⁾

2 N 3 8 4 TO

^-

44 P Ge D 40 10 120 70 *

60 A

⁽

30 mA

^-

1 V

⁾

2N 3 8 8 TO

^-

5 N Ge A 25 200 150 17

30

J (

10 mA

^-

1 V

⁾

TO

^-

5 P Ge A 30 200 150 9

2 N 3 9 6

40 T

⁽

10 mA

^-

1 V

⁾

TO

^-

5 30 200 150 13

2 N 3 9 7 P Ge A

30 A

⁽

12 mA

^-

0

,

15 V

)

1 2

P Ge A 25 100 120

2N 4 0 4 TO

^-

5

60 A

⁽

1 mA

^-

0

,

25 V

⁾

30

2 N 4 2 8 TO

^-

5 P Ge A 30 400 150

25 A

⁽

10 mA

^-

0

,

5 V

⁾

150 300 *

TO

^-

18 P Ge ME 15 50 2 N 711 A

90 *

⁽

¹

^,

^{5 mA}

^-

^{12 V}

^-

^{1 kHz} ,

120 70 *

2 N 1 2 2 5 TO

^-

33 P Ge D 40 10

20 T

⁽

10 mA

^-

1 V

⁾

TO

^-

5 N Ge A 25 300 150 5

2 N 1 3 0 2

20 A

⁽

10 mA

^-

1 V

^{) '}

30 300 150 5

TO

^-

5 P Ge A 2 N 1 3 0 3

40 A

⁽

10 mA

^-

1 V

⁾

25 300 150 10

TO

^-

5 N Ge A 2N 1 3 0 4

40 A

⁽

10 mA

^-

1 V

⁾

P Ge A 30 300 150 10

2N 1 3 0 5 TO

^-

5

60 A

(

10 mA

^-

1 V

⁾

300 150 15

TO

^-

5 N Ge A 25 2 N 1 3 0 6

60 A

⁽

10 mA

^-

1 V

⁾

30 300 150 15

TO

^-

5 P Ge A 2 N 1307

80 A

⁽

10 mA

-

1 V

)

25

300 150

N Ge - ^{A 25}

2 N 1 3 0 8 TO

^-

5

80

A (

10 mA

^-

1 V

⁾

20

30 300 150 2 N 1 3 0 9 TO

^-

5 P Ge A

A -M i n i m u m M E M e s a

D D r i f t A = Allié

P ^-P N P N^ N P N

D I O D E S

Limites absolues

à1_amb=25°C

Caractéristiques gé

n

érales

lp ^{min à}

= 25° ^C

VR '

^F

^I

^R

^{max à}

^t

Type Boîtier Nature

_{t a m}

a m b (

V ⁾

(

mA

)

(

mA

⁾ _{( /}/

A

)

A

⁾

< ^{° C}

⁾

SF . D 105 D 0

^-

7 Ge 30 30 5

(

1 V

⁾

12000 V

⁾

500 (30 V

)

55 SF . D 106 D 0

^-

7 Ge 25 30 5

⁽

1 V

⁾

100

^,

5 V

)

200

⁽

25 v

)

25

SF

.

D 1 0 8 D 0

-

7 Ge 100 30 4

,

5

⁽

1 V

⁾

7

(

10 V

⁾

250

(

100 V

⁾

25

SF .D 1 1 8 D 0

^-

7 Ge 10 20 12

⁽

1 V

⁾

15

(

1

^,

5 V

)

400

⁽

10 V

⁾

25

SF . D 1 1 9 D 0

-

7 Ge 20 30 5

(

1 V

)

60

⁽

10 V

⁾

250

⁽

20 V

⁾

25

SF . D 121 DO

-

7 Ge 10 30 1 7

⁽

1 V

)

2

(

1

^,

5 V

⁾

10

(

10 V

⁾

25

SF. D 1 2 2 DO

-

7 Ge 25 100 50

(

0

^,

80 V ) 8

⁽

10 V

⁾

20

⁽

25 V

⁾

25

SF. D 127 DO

^-

7 Ge 25 100 50

(

0

,

65 V

)

12

⁽

10 V

⁾

20

⁽

25 V

⁾

55

SF. D 1 2 9 D 0

^-

7 Ge 40 200 200

(

0

^,

75 V

⁾

15

⁽

10 V

)

35

⁽

40 V) 55

1 N 5 4A D0

^-

7 Ge 50 30 5

⁽

1 V

)

7

⁽

10 V

⁾

100

⁽

50 V

⁾

25

1 N 8 1 DO

^-

7 Ge 40 30 3

⁽

1 V

⁾

10

(

10 V

)

100

⁽

40 V

⁾

25

1 N 1 9 1 DO

^-

7 Ge 70 30 5

⁽

1 V

)

25

⁽

10 V

)

250

⁽

70 V

⁾

55

1 N 1 9 2 DO

^-

7 Ge 50 30 5

⁽

1 V

⁾

50

⁽

10 V

⁾

250

⁽

50 V

⁾

55

1 N 1 9 8 DO

^-

7 Ge 80 30 4

⁽

1 V

⁾

10

⁽

10 V

⁾

125

⁽

80 V

)

25

1 N 5 4 1 D0

-

7 Ge 45 35 4

⁽

1 V

⁾

60

⁽

10 V

⁾

450

⁽

45 V

⁾

55

1 N 5 4 2 DO

^-

7 Ge 45 35 4

(

1 V

⁾

60

(

10 V

⁾

450

⁽

45 V

)

55