Morphological Characterization of SEM ThinSilver Films Using Thresholding

valence band maximum and conduction band minimum that straddle the oxygen and hydrogen evolution potential.. In addition, its small band gap allows the material to absorb a

In the first case, it was observed that the piece of the not annealed sample 499, which was treated with the disordering procedure, showed the highest band gap of all samples,

The calculation shows that the average size of the crystallites of as-grown Cu 2 O samples electrodeposited at −0.4, −0.5 and −0.6 V versus SCE estimated from (1 1 1) diffraction

In order to see the effect of deposition times on the morphological properties of different Cu2O thin layers, surface topographical characterization using an atomic force

Nickel oxide is a p-type semiconductor, is an important material because of its large direct optical gap between 3.6 and 4.0 eV; and easy to deposit in thin layers by many

The aim of this work was to determine adequate parameters for cathodic electrolytic deposition, on TA6V substrate, of cerium hydroxide films from mixed

Segmentation is a basal task in image processing and computer vision that can be used to segment and to distinguish the interesting details like pores, grains and

To determine the nature of the limiting stage and the reaction mechanism on the electrode, we plot the polarization curves of pure zinc as a function of the scan rates fig