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HAL Id: jpa-00229684

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Submitted on 1 Jan 1989

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STRUCTURE OF CLEAN III-V SEMICONDUCTOR SURFACES

M. Sauvage-Simkin

To cite this version:

M. Sauvage-Simkin. STRUCTURE OF CLEAN III-V SEMICONDUCTOR SURFACES. Journal de

Physique Colloques, 1989, 50 (C7), pp.C7-119-C7-128. �10.1051/jphyscol:1989711�. �jpa-00229684�

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COLLOQUE DE PHYSIQUE

Colloque C 7 , Suppl6ment au nolO, Tome 50, octobre 1989

STRUCTURE OF CLEAN 1 1 1 - V SEMICONDUCTOR SURFACES

M. SAWAGE-SIMKIN'

LURE, CNRS-MEN-CEA, Bat.209d, F-91405 Orsay, France

RCsum6 - Les structures atomiques de surfaces reconstruites de serniconducteurs III-V ont CtC rCsolues par la technique de diffraction des rayons X sous incidence rasante en ultra-vide pour deux orientations cristallographiques importantes:

{

l l l

}

et (001

) .I1

a et6 montrC que dans le premier cas, le processus dominant la reconstruction est la rehybridation des orbitales tandis que dans le second, la dimCrisation des atomes de la couche de surface est 5 l'origine de la nouvelle symktrie. La coexistence de deux structures ordonnies a

Ctt

observCe dans le cas de la reconstruction ~ ( 4 x 4 ) de GaAs (001) ce qui met en Cvidence le degrC de IibertC additionnel lie i une possible variation de la stcechiomCme de surface..

Abstract- The atomic structures of III-V semiconductor reconstructed surfaces have been solved by grazing incidence X-ray diffraction under ultra-high vacuum for two important cristallographic orientations:

{

11 1) and (001

).

It was shown that the dominant effect in the first case was orbital rehybridization, whereas in the second example, dimer formation between the atoms of the surface layer is at the origin of the new symmetry . The coexistence of two ordered structures has been observed for the ~ ( 4 x 4 ) reconstruction of GaAs (001) which outlines the additional degree of freedom induced by a possible variation of the surface stoichiometry.

S u r f a c e s t u d i e s o n 111-V c o m p o u n d s h a v e b e e n g r e a t l y s t i m u l a t e d b y t h e d e v e l o p m e n t o f u l t r a - h i g h v a c u u m (UHV) g r o w t h a n d p r e p a r a t i o n t e c h n i q u e s . R e s t r i c t e d a t f i r s t t o t h e a n a l y s i s o f f r e s h l y c l e a v e d ( 1 10) s a m p l e s , e l e c t r o n s p e c t r o s c o p i c and s t r u c t u r a l p r o b e s a r e now a p p l i e d t o a v a r i e t y of s u r f a c e o r i e n t a t i o n s w h e n t h e y a r e c o u p l e d t o m o l e c u l a r b e a m e p i t a x i a l (MBE) g r o w t h c h a m b e r s . R e c e n t l y , s u r f a c e a t o m i c s t r u c t u r e d e t e r m i n a t i o n h a s b e e n s u c c e s s f u l l y a c h i e v e d b y t h e u s e o f g r a z i n g i n c i d e n c e X - r a y d i f f r a c t i o n (GIXD) w i t h s y n c h r o t r o n r a d i a t i o n s o u r c e s ; a p r e s e n t a t i o n o f GIXD i s b e y o n d

+and Laboratoire de Minkralogie-Cristallographie,associC au CNRS et aux Universitis P. et M .Cwie et Paris 7 , 4 place Jussieu, F-75252 Paris-Cedex 05, France

Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1989711

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t h e s c o p e o f t h i s p a p e r a n d t h e r e a d e r i s r e f e r r e d t o a d e d i c a t e d c h a p t e r w r i t t e n b y ~ . ~ . ~ o b i n s o n ( ' ) . I n t h i s r e v i e w w e w i l l d e s c r i b e t h e r e s u l t s o f e x p e r i m e n t s p e r f o r m e d on t w o d i f f e r e n t c l a s s e s o f m a t e r i a l s : ( 1 11) o r i e n t e d s a m p l e s o f I n S b a n d GaSb s t u d i e d b y a c o l l a b o r a t i n g t e a m w o r k i n g a t ~ a s ~ l a b * ( ~ a m b u r g - F R G ) a n d data c o n c e r n i n g t h e GaAs (001) r e c o n s t r u . c t e d s u r f a c e s c o m i n g f r o m t h e LURE f a c i l i t y * * (Orsay-F). S i n c e a m a j o r e f f o r t i s p r e s e n t l y d i r e c t e d t o w a r d s MBE g r o w t h of 11-V1 c o m p o u n d s , a l t h o u g h GIXD e x p e r i m e n t s a r e o n l y i n a . p r e p a r a t i o n phase, a b r i e f r e v i e w o f t h e s u r f a c e r e c o n s t r u c t i o n s i n t h e s e c o m p o u n d s i s g i v e n i n t h e l a s t s e c t i o n .

11-BASIC FFATURFS OF 111

-

V SURF ACES

When c o m p a r e d t o e l e m e n t a l s e m i c o n d u c t o r s , 111-V c o m p o u n d s u r f a c e s p r e s e n t a n a d d i t i o n a l d e g r e e o f f r e e d o m r e l a t e d t o t h e s t o i c h i o m e t r y a n d p o l a r i t y . The b u l k c r y s t a l s t r u c t u r e b e l o n g s t o t h e z i n c b l e n d e t y p e a n d t h e l o w i n d e x f a c e s a r e v e r y d i f f e r e n t f r o m one a n o t h e r . T h e { l 10) c l e a v a g e f a c e i s s t o i c h i o m e t r i c , w i t h one d a n g l i n g b o n d p e r s u r f a c e a t o m a n d e x h i b i t s a 1x1 r e c o n s t r u c t i o n i n v o l v i n g r e h y b r i d i z a t i o n f r o m sp3 t o s p 2 f o r t y p e I11 a t o m s a n d f r o m s p 3 t o s Z p 3 f o r t y p e V a t o m s The c l e a n ( 1 1 l } s u r f a c e o b t a i n e d b y s p u t t e r a n d a n n e a l i n g c y c l e s o r b y MBE, e x p o s e s e i t h e r t y p e 111 a t o m s ( o r i e n t a t i o n l a b e l l e d ( 1 1 ) o r t y p e V a t o m s ( o r i e n t a t i o n l a b e l l e d

( i T i ) B

w i t h one d a n g l i n g b o n d p e r s u r f a c e a t o m . S e v e r a l r e c o n s t r u c t i o n s d i s c u s s e d i n t h e f o l l o w i n g s e c t i o n s h a v e been o b s e r v e d f o r b o t h cases, e a c h o f w h i c h h a v e a s u b s t a n c i a l amount o f o r b i t a l r e h y b r i d i z a t i o n ( 3 ) . The (001) s u r f a c e , o f m a j o r t e c h n o l o g i c a l i m p a c t , has b e e n t h e s u b j e c t o f n u m e r o u s s t u d i e s p a r t i c u l a r l y i n t h e c a s e o f GaAs (001). The b u l k t e r m i n a t i o n l a y e r i s p o p u l a t e d b y e i t h e r Ga o r A s a t o m s w i t h t w o d a n g l i n g b o n d s p e r atom, b u t a n i d e a l 1x1 s t r u c t u r e i s n e v e r o b s e r v e d . The s u r f a c e p h a s e d i a g r a m , a s a f u n c t i o n o f t e m p e r a t u r e o r (and) A s p a r t i a l p r e s s u r e , i s s u m m a r i z e d i n t a b l e 1 w h i c h i s t a k e n f r o m r e f e r e n c e 4 . S e v e r a l s u r f a c e s y m m e t r i e s h a v e b e e n i d e n t i f i e d b y r e f l e x i o n h i g h e n e r g y e l e c t r o n d i f f r a c t i o n (RHEED) a n d l o w e n e r g y e l e c t r o n d i f f r a c t i o n (LEED) a n d t h e i r a p p r o x i m a t e s t o i c h i o m e t r y , c h a r a c t e r i z e d b y t h e As/Ga r a t i o , h a s b e e n e s t i m a t e d on t h e b a s i s o f A u g e r o r c o r e l e v e l p h o t o e m i s s i o n s p e c t r o s c o p i c H o w e v e r , e x t e n d e d c o m p o s i t i o n r a n g e s a r e u s u a l l y f o u n d f o r e a c h r e c o n s t r u c t i o n a n d i n m a n y p h a s e s , t h e n a t u r e a n d e x a c t l o c a t i o n o f t h e a t o m i c s p e c i e s i n t h e t o p l a y e r s a r e n o t k n o w n .

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T a b l e 1

Effects of surface stoichiometry on GaAs (001) surface reconstruction

Temperature

range Surface structun Reparation mode Surface cov- BA,

CC)

(after ref.

[

5 1)

c(8 X

2) MBE

or annealing

0.22

(4

X

1)

of

c(2

X

8) (3

X

1)

d6 X 4) 0.37

(l X 6) 0.5 2

d2 X 8 ) 0.6

1

4 4

X

4) As

adsorption or

0.86 (1

X 1) annezling of

(l

X

1)

?

A s f a r as t h e t w o a r s e n i c r i c h p h a s e s a r e c o n c e r n e d , p r i o r t o t h e G X I D r e s u l t s d e s c r i b e d l a t e r i n t h i s p a p e r , a s t r u c t u r a l m o d e l h a d b e e n p r o p o s e d f o r t h e A s s a t u r a t e d ~ ( 4 x 4 ) p h a s e on t h e b a s i s o f c o r e l e v e l p h o t o e l e c t r o n s p e c t r o s c o p y , i n v o l v i n g t h e c h e m i s o r p t i o n o f A s d i m e r s on an a r s e n i c b u l k t e r m i n a t i o n l a y e r ( 7 ) . The s o - c a l l e d A s s t a b i l i z e d 2 x 4 ( o r

~ ( 2 x 8 ) ) r e c o n s t r u c t e d s u r f a c e h a s b e e n s t u d i e d b y s c a n n i n g t u n n e l l i n g m i c r o s c o p y (STM) (8) a n d RHEED('), t h e b u i l d i n g b l o c k s o f t h e s u r f a c e s t r u c t u r e a r e a l s o A s d i m e r s b u t t h e y a r e a s s u m e d h e r e t o b e b o n d e d t o a

0

Unreconstructed Reconstructed

Fig. l a)Asymmetric unit of the Patterson map calculated from the InSb (1 11) 2x2 half-order peaks b)interatomic vectors in a reconstructed and ideal asymmemc unit

c)projected interatomic vectors in the distorted and ideal hexagonal bonding scheme.

(after ref. l l )

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w h i c h r e v e a l s t h e i m p o r t a n t i n t e r a t o m i c v e c t o r s i n t h e u n i t c e l l . C o n s i d e r i n g a n i d e a l s u r f a c e o n e c a n i n f e r t h e a t o m i c d i s p l a c e m e n t s p r o d u c i n g t h e s a m e v e c t o r s e t . F i g . l a t o c , e x t r a c t e d f r o m t h e PhD t h e s i s o f ~ . ~ e i d e n h a n s ' l ( ' l), s h o w s t h e d i s t o r t i o n s o f t h e p r o j e c t e d h e x a g o n a l b o n d n e t w o r k b e t w e e n I n a n d Sb a t o m s , f u l f i l l i n g t h e r e q u i r e m e n t s o f t h e P a t t e r s o n m a p .

H o w e v e r , s t r u c t u r e f a c t o r s c a l c u l a t e d w i t h a 2 x 2 u n i t c e l l c o n t a i n i n g o n l y t h e s i x a t o m s o f t h e d i s t o r t e d h e x a g o n d i d n o t y i e l d a g o o d f i t w i t h t h e e x p e r i m e n t a l d a t a . I n o r d e r t o r e v e a l t h e e r r o r s i n t h e m o d e l o n e c a l c u l a t e s a F o u r i e r d i f f e r e n c e m a p a c c o r d i n g t o t h e f o r m u l a :

Ga b u l k t e r m i n a t i o n l a y e r . T h i s s t r u c t u r a l d e s c r i p t i o n i s s u p p o r t e d b y t o t a l e n e r g y c a l c u l a t i o n s ( 9 ) b u t i t does n o t g i v e a p r o p e r a c c o u n t o f t h e o b s e r v e d X - r a y d i f f r a c t e d i n t e n s i t i e s c o l l e c t e d b y GIXD as w i l l b e d i s c u s s e d l a t e r .

I n g e n e r a l , i t c a n b e s a i d t h a t t h e m a i n f e a t u r e o f { l 1 0 ) a n d { l 1 l } r e c o n s t r u c t e d 111-V s u r f a c e s i s o r b i t a l r e h y b r i d i z a t i o n w h e r e a s d i m e r o r d e r i n g a l o n g d i f f e r e n t g e , o m e t r i c a l p a t t e r n s a c c o u n t s f o r t h e v a r i o u s s y m m e t r i e s p r e s e n t e d by t h e { l o o ) A s r i c h g a l l i u m a r s e n i d e s u r f a c e s .

111-ATOMIC STRUCTURE OF

11

1 1 ) 111-V COMPOUND SURFACES

T h e GIXD e x p e r i m e n t , p e r f o r m e d on a I n S b ( l 1 l ) A 2 x 2 r e c o n s t r u c t e d s u r f a c e ( l O ) , i s t h e f i r s t e x a m p l e o f t h e a p p l i c a t i o n of t h e s t a n d a r d c r y s t a l l o g r a p h i c m e t h o d s t o a t w o - d i m e n s i o n a l p r o b l e m . The s u c c e s s i v e s t e p s l e a d i n g t o t h e f i n a l a s s e s s m e n t o f t h e s t r u c t u r a l p a r a m e t e r s w i l l t h u s b e d e s c r i b e d i n some d e t a i l as a m o d e l c a s e .

s a m p l e o r e p a r a t i o n : t h e s a m p l e s w e r e c l e a n e d b y r e p e a t e d c y c l e s o f A r s p u t t e r i n g a n d annealing: t b e s u r f a c e r e c o n s t r u c t i o n w a s o b s e r v e d b y LEED a n d t h e a b s e n c e o f i m p u r i t y w a s c o n t r o l l e d b y VUV p h o t o e l e c t r o n s p e c t r o s c o p y . The s a m p l e w a s t h e n t r a n s f e r r e d t o a p o r t a b l e UHV c h a m b e r , e q u i p p e d w i t h a v a c u u m t i g h t b e r y l l i u m w i n d o w a d a p t a b l e t o t h e X + - a y d i f f r a c t o r n e t e r a n d d i f f r a c t e d i n t e n s i t i e s w e r e c o l l e c t e d a t t h e c r i t i c a l i n c i d e n c e a n g l e f o r t o t a l r e f l e c t i o n .

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D a t a a n a l u s i s : a f t e r c o r r e c t i o n o f t h e g e o m e t r i c a l f a c t o r s a n d s y m m e t r y a v e r a g i n g , t h e e x p e r i m e n t a l i n t e n s i t i e s w e r e F o u r i e r t r a n s f o r m e d t o p r o d u c e a P a t t e r s o n map,

w h e r e

1

F c a l c l a n d ahk a r e , r e s p e c t i v e l y , t h e m o d u l u s a n d t h e p h a s e o f t h e s t r u c t u r e f a c t o r s c a l c u l a t e d w i t h t h e m o d e l s t r u c t u r a l p a r a m e t e r s . P o s i t i v e p e a k s i n t h e F o u r i e r d i f f e r e n c e m a p ( f i g 2) m e a n t h a t a t o m s h a v e b e e n o m i t t e d i n t h e d e s c r i p t i o n . C l e a r l y a s e v e n t h a t o m a t a n u n d i s p l a c e d b u l k p o s i t i o n ( a r r o w i n f i g . 2 ) m u s t be i n c l u d e d i n t h e 2 x 2 s u r f a c e u n i t c e l l . L e a s t s q u a r e r e f i n e m e n t o f t h e a t o m i c p o s i t i o n s y i e l d e d a v a l u e o f 2 . 1 . A t t h i s s t a g e , no a s s u m p t i o n w a s m a d e on t h e n a t u r e o f t h e a t o m i c s p e c i e s w h i c h w e r e r e p l a c e d b y a n " a v e r a g e " Sn a t o m ( 2 = 5 0 ) . H o w e v e r , upon r e f i n i n g t h e a t o m i c n u m b e r s , I n (Z=49) a n d Sb (2=51) a t o m s h a v e b e e n i d e n t i f i e d o n t h e d i f f e r e n t s i t e s w i t h a f i n a l v a l u e o f 1 . 8 . T h e s a m e p r o c e d u r e h a s b e e n a p p l i e d t o t h e GaSb ( 1 l l ) A 2x2(12) w h i c h s h o w s a v e r y s i m i l a r s t r u c t u r e . B e c a u s e o f t h e l a r g e d i f f e r e n c e i n Ga a n d Sb f o r m f a c t o r s , i n t e r c h a n g i n g Sb f o r Ga o n t h e s e v e n t h a t o m s i t e l e d i n t h a t c a s e t o a n i n c r e a s e o f

x2

f r o m 2 t o 17.

Fig.2 Electron density difference map calculated with a 6-atom basis: arrow points to the positive peak revealing

a

missing atom in the basis (after ref. 10)

Fig.3 Model for the reconstructed 2x2 unit cell : large displacements for Gal and Sbl in the first bilayer; smaller displacements for Ga2 and Sb3 in the second bilayer (after ref.14)

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The GaSb d a t a s e t h a s b e e n r e c e n t l y r e v i s i t e d t w i c e ; t h e f i r s t i m p r o v e m e n t s u g g e s t e d a p a r t i a l o c c u p a n c y o f t h e Ga v a c a n c y c o r n e r s i t e ( 1 3 ) w h i c h b r o u g h t

X 2

d o w n t o 0 . 4 2

.

The a u t h o r s o f t h e o r i g i n a l p a p e r , a l t h o u g h n o t d i s r e g a r d i n g t h i s p o s s i b i l i t y , s h o w e d t h a t a s i m i l a r r e d u c t i o n o f w a s o b t a i n e d b y i n c l u d i n g d i s p l a c e m e n t s i n t h e s e c o n d a t o m b i l a y e r , a s s h o w n i n f i g 3 ( l 4 ) . By p r e s e r v i n g t h e m a i n f i n d i n g s o f t h e s t r u c t u r e a n a l y s i s n a m e l y t h e a l m o s t p l a n a r sp2 c o n f i g u r a t i o n f o r t h e g r o u p 111 a t o m s a n d t r i h e d r a l p3 b o n d i n g f o r t h e g r o u p V a t o m w i t h a l o n e s 2 p a i r , t h i s f i n a l d e s c r i p t i o n c o n v e y s m o r e p h y s i c a l s i g n i f i c a n c e . H o w e v e r t h e s t a t i s t i c a l e q u i v a l e n c e o f t h e t w o s o l u t i o n s a d r e s s e s t h e u n i c l t y o f t h e s t r u c t u r a l d e s c r i p t i o n .

D a t a h a v e b e e n c o l l e c t e d b y t h e s a m e g r o u p on t h e o p p o s i t e ( i i i ) B 3 x 3 r e c o n s t r u c t e d s u r f a c e s o f InSb and GaSb t h a t w e r e p r e p a r e d b y an i d e n t i c a l p r o c e d u r e ( 1 l ) ' A l t h o u g h t h e d a t a s e t s w e r e r e p r o d u c i b l e a n d s h o w e d a s i m i l a r h i e r a r c h y i n t h e d i f f r a c t e d i n t e n s i t i e s w h i c h s t r e n g h e n e d t h e b e l i e f i n a u n i q u e s u r f a c e u n i t c e l l i n b o t h m a t e r i a l s , no s a t i s f a c t o r y m o d e l c o u l d b e d e r i v e d a n d i t w a s s u g g e s t e d t h a t t h e 3 x 3 a p p a r e n t s y m m e t r y c o u l d r e s u l t f r o m t h e s u p e r p o s i t i o n o f d i f f e r e n t d o m a i n s w i t h 1x3, 3 x 1 and\j3x\l3 r e c o n s t r u c t i o n s . P h a s e c o e x i s t e n c e i s i n d e e d t h e k e y w o r d t o u n r a v e l l i n g s u r f a c e s t r u c t u r e s i n m a n y i n s t a n c e s as w i l l b e d e m o n s t r a t e d i n t h e n e x t s e c t i o n .

I V - G a A s (001) RECONSTRUCTED A s RICH SURFACES

A s a l r e a d y m e n t i o n e d i n s e c t i o n 11, o n l y t h e t w o m o s t A s r i c h s u r f a c e s h a v e b e e n t h e o b j e c t o f o u r GIXD s t u d i e s n a m e l y t h e A s s a t u r a t e d ~ ( 4 x 4 ) a n d A s s t a b i l i z e d 2 x 4 r e c o n s t r u c t i o n s .

S a m p l e p r e w a r a t i o n : t h e s u r f a c e s h a v e b e e n p r e p a r e d i n - s i t u b y t h e s t a n d a r d

M B E

p r o c e d u r e s i n a g r o w t h c h a m b e r d i r e c t l y c o u p l e d t o t h e X - r a y

UHV d i f f r a c t o m e t e r ( 1 5 ) . A t t h e g r o w t h t e m p e r a t u r e (580'C) a n d u n d e r an A s p r e s s u r e o f 1 0 - ~ m b a r , t h e s t a b l e p h a s e i s t h e 2 x 4 r e c o n s t r u c t e d s u r f a c e w h i c h t r a n s f o r m s t o t h e ~ ( 4 x 4 ) w h e n c o o l e d b e l o w 300°C u n d e r t h e s a m e A s p r e s s u r e . I n o r d e r t o r e t a i n t h e 2 x 4 s y m m e t r y a t r o o m t e m p e r a t u r e , t h e A s p r e s s u r e m u s t b e l o w e r e d w h i l e t h e s a m p l e i s k e p t a t 45O0C, f r o m w h e r e t h e s t r u c t u r e r e m a i n s u n c h a n g e d down t o l o w t e m p e r a t u r e i n UHV c o n d i t i o n s .

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D a t a a n a l u s i s .: i n t h e c a s e o f t h e ~ ( 4 x 4 ) s t r u c t u r e , 38 i n d e p e n d e n t f r a c t i o n a l s u r f a c e p e a k s h a v e b e e n c o l l e c t e d a n d u s e d t o p r o d u c e a t w o d i m e n s i o n a l P a t t e r s o n m a p ( f i g . 4 ) . T h e A s c h e m i s o r b e d m o d e l d e r i v e d f r o m p h o t o e m i s s i o n data(7) and c o r r e s p o n d i n g t o an A s c o v e r a g e o f 0 . 5 d i d n o t a c c o u n t f o r a l l t h e i n t e r a t o m i c v e c t o r s p r e s e n t i n t h e P a t t e r s o n map; a m o d e l i n v o l v i n g s i x A s a t o m c l u s t e r s a r r a n g e d on t h e s a m e ~ ( 4 x 4 ) s q u a r e l a t t i c e (As c o v e r a g e 0 . 7 5 ) w a s t h e n i n t r o d u c e d ( f i g . 5a a n d b).

Fig 5.

---

Cherniaorbed As 0 As bulk termination layer

@

0 Ga in the JalaYer

Fig.4

Experimental Patterson

map

for

the GaAs (001) ~ ( 4 x 4 )

surface;

comparison with

the interatomic vectors present in models 5a and 5b.

Fig.5 a) structural model proposed in ref.

7

on the basis of photoelectron spectoscopy data.

b) structural model with a higher As coverage proposed in ref.16.

L e a s t s q u a r e f i t t i n g o f t h e o b s e r v e d s t r u c t u r e f a c t o r s s h o w e d t h a t t h e a c t u a l s u r f a c e w a s a 50-50 m i x t u r e o f b o t h s t r u c t u r e s l e a d i n g t o a n a v e r a g e A s c o v e r a g e o f 0 , 6 2 5 ( ~ ~ ) . T h i s r e s u l t e n a b l e s u s t o u n d e r s t a n d t h e b r o a d

s t o i c h i o m e t r y r a n g e f o u n d f o r t h e ~ ( 4 x 4 ) s y m m e t r y s i n c e d i f f e r e n t p r e p a r a t i o n c o n d i t i o n s m i g h t c h a n g e t h e p a r t i t i o n b e t w e e n t h e t w o s t a b l e a t o m i c a r r a n g e m e n t s .

S i x i n d e p e n d e n t i n t e g e r o r d e r d i f f r a c t i o n p e a k s h a v e b e e n u s e d t o a s s e s s t h e r e g i s t r y o f t h e c h e m i s o r b e d l a y e r w i t h r e s p e c t t o t h e u n d e r l y i n g b u l k , s i n c e b o t h t h e b u l k a n d t h e s u r f a c e c o n t r i b u t e c o h e r e n t l y t o t h e a m p l i t u d e d i f f r a c t e d a t t h e s e l o c a t i o n s i n r e c i p r o c a l space(17). I n t h e c a s e o f 111-V (001) s u r f a c e s , i n t e g e r o r d e r s hkO w h i c h a r e b u l k f o r b i d d e n b u t s u r f a c e a l l o w e d ( h a n d k b o t h odd), a r e v e r y s e n s i t i v e i n d i c a t o r s o f t h e c h e m i c a l n a t u r e o f t h e b u l k t e r m i n a t i o n l a y e r : o w i n g t o t h e n o n - e q u i v a l e n c e o f d i r e c t i o n s C l

l 0 1

a n d [ l

TO1

i n d u c e d b y t h e d a n g l i n g b o n d o r i e n t a t i o n

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( c o n v e n t i o n a l l y , t h e d a n g l i n g b o n d s a r e p r o j e c t e d a l o n g

Elm]

i n a n A s t e r m i n a t e d i d e a l (001) s u r f a c e ) , it c a n b e s h o w n t h a t t h e b u l k c o n t r i b u t i o n t o hkO r e f l e c t i o n s a r e a l t e r n a t i v e l y s t r o n g a n d w e a k a c c o r d i n g t o t h e f o l l o w i n g r u l e :

s t r o n g f o r an A s t e r m i n a t e d b u l k h + k = 4 n

weak f o r a Ga t e r m i n a t e d b u l k weak f o r an A s t e r m i n a t e d b u l k h + k = 4 n + 2

s t r o n g f o r a Ga t e r m i n a t e d b u l k .

A s s h o w n i n f i g . 6 , w h e r e t h e i n t e g e r o r d e r s 310 ( p r o f i l e a) and

3m

( p r o f i l e b) a r e d i s p l a y e d , t h e ~ ( 4 x 4 ) r e c o n s t r u c t i o n c o r r e s p o n d s t o an A s t e r m i n a t e d b u l k . The L o r e n z i a n f i t l e a d s t o a c o h e r e n c e l e n g t h o f

~ o o A ,

w h e r e a s t h e f u l l w i d t h a t h a l f m a x i m u m o f t h e p u r e s u r f a c e p e a k s i n d i c a t e s a c o h e r e n t s i z e f o r r e c o n s t r u c t e d d o m a i n s o f about 500.A

.

T h e d a t a c o l l e c t e d o n t h e 2 x 4 s u r f a c e d o n o t a l l o w a s i m p l e i n t e r p r e t a t i o n ( 1 8 ) : t h e i n t e n s i t y r a t i o s b e t w e e n f r a c t i o n a l q u a r t e r o r d e r s d i s a g r e e w i t h t h e STM d e r i v e d ~ t r u c t u r e ' ~ ) a n d t h e i n t e g e r o r d e r s do n o t

Fig.6 Dissymmetry between integer orders 310 and 310 in the ~(4x4) structure demonstrating the As nature of the bulk termination layer.

Fig.7 unpredicted strong bulk-like 310 reflexion (a) and multicomponent 310 reflection (b) for

a

2x4

GaAs (001) phase showing the presence of both Ga and As bulk top layers.

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o b e y e i t h e r r u l e s t a t e d a b o v e (fig.7). The m o s t p r o b a b l e e x p l a n a t i o n f o r t h i s i s t h a t A s t e r m i n a t e d a r e a s w i t h no o r d e r e d o v e r l a y e r a r e a l s o p r e s e n t b e s i d e r e c o n s t r u c t e d r e g i o n s w i t h a p a r t i a l A s l a y e r o v e r a Ga t e r m i n a t e d b u l k w h i c h e x p l a i n s t h e s h a r p n e s s o f p r o f f l e 7 a a r i s i n g o n l y f r o m b u l k d i f f r a c t i o n

.

T h i s e x a m p l e i l l u s t r a t e s t h e l i m i t a t i o n s and a d v a n t a g e s o f GIXD c o m p a r e d t o STM : GIXD p r o b e s a l a r g e s a m p l e a r e a and t h u s d e l i v e r s a v e r a g e s t r u c t u r a l r e s u l t s , w h e r e a s STN i s a b l e t o i d e n t i f y s m a l l p a t c h e s o f d i f f e r e n t l y o r d e r e d r e g i o n s . H o w e v e r , GIXD d a t a i n c l u d e b u l k contributions w h i c h a r e r e q u i r e d f o r a f u l l d e s c r i p t i o n o f t h e s t r u c t u r e s .

.Y CONCLUSION

GIXD i s p r o b a b l y t h e m o s t p o w e r f u l t o o l t o i n v e s t i g a t e t h e a t o m i c r e a r r a n g e m e n t s w h i c h t a k e p l a c e on c l e a n s u r f a c e s . O u r e x a m p l e s , d e a l i n g w i t h c o m p o u n d m a t e r i a l s , h a v e s h o w n t h a t GIXD p r o v i d e s b o t h t h e l o c a t i o n a n d c h e m i c a l i d e n t i f i c a t i o n o f a t o m s n o t o n l y i n t h e t o p m o s t l a y e r b u t a l s o i n t h e u n d e r l y i n g b u l k . I n a d d i t i o n t o i t s f u n d a m e n t a l i n t e r e s t , t h e k n o w l e d g e o f t h e a t o m i c s t r u c t u r e o f 111-V c o m p o u n d s u r f a c e s i s a p r i m a r y i m p o r t a n c e f o r t h e u n d e r s t a n d i n g o f 111-V i n t e r f a c e s ; a p a r t i c u l a r l y e x c i t i n g f i e l d i s c o n c e r n e d w i t h t h e h e t e r o e p i t a x i a l g r o w t h o f 11-V1 c o m p o u n d s o n GaAs s u b s t r a t e s w h e r e a' c l e a r c o r r e l a t i o n h a s b e e n e s t a b l i s h e d b e t w e e n t h e r e c o n s t r u c t i o n o f t h e GaAs (001) s u b s t r a t e a n d t h e o r i e n t a t i o n o f t h e CdTe e p i l a Y e r ( l g ) . D e t a i l e d s t u d i e s o f t h e p r e c u r s o r s t a t e s T ~ / G ~ A s ( " ) h a v e b r o u g h t a d d i t i o n a l l i g h t o n t h i s s u b j e c t c o n f i r m i n g t h a t ( 1 11) o r i e n t e d CdTe, r e c o n s t r u c t e d 2 x 1 , i s p r o d u c e d on t h e 4 x 2 ( o r ~ ( 8 x 2 ) ) G a - s t a b i l i z e d GaAs (001) w h e r e a s (001) o r i e n t e d CdTe g r o w s on t h e 2 x 4 A s - s t a b i l i z e d s u r f a c e . GIXD e x p e r i m e n t s on t h e s e s y s t e m s a r e b e i n g s t a r t e d t o c o m p l e m e n t t h e i n f o r m a t i o n d e r i v e d f r o m e l e c t r o n s p e c t r o s c o p y o n t h e a t o m i c a r r a n g e m e n t s a t t h e i n t e r f a c e .

A k n o w l e d a e m e n t s : t h a n k s a r e d u e t o a l l m y c o l l e a g u e s a n d c o w o r k e r s who p a r t i c i p a t e d a c t i v e l y t o t h e r e s e a r c h e s q u o t e d i n t h e p r e s e n t r e v i e w :

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* R. Feidenhans'l, M. Nielsen, J. Bohr, F. Grey and

M.

Toney - Riso National Laboratory,DK-4000 Roskilde, Denmark; R. L. Johnson -

Max Planck Institiit fur

Festkorperjorschung, 0-7000 Stuttgart, Federal Republic of Germany; I. K. Robinson -AT

&

T Bell Laboratories, Murray Hill, New Jersey 07974, USA.

** R. Pinchaux, LURE and Universite' P. et M. Curie, 4 Place Jussieu, F-75252 Paris Cedex 05;

J. Massies, LURE and LPSES-CNRS, rue B. Gregory, 06950 Valbonne, France;

N.

Jedrecy, P.

Claverie and J. Bonnet, LURE; I. K. Robinson, AT &T Bell Laboratories.

REFERENCES

/l/ Robinson, I.

K.,

Handbook on Synchrotron Radiation, ed. D.E. Moncton and G.Brown (North Holland-Amsterdam 1987).

/2/

Lubinsky, A.R., Duke, C.B., Lee, B.W. and Mark, P. Phys. Rev. Lett. 3 6 (1976) 1058 and Duke, C.B., Mailhiot, C., Paton, A., Chadi, D.J. and Kahn, A. J. Vac. Sci. Technol. B3 (1985) 1087.

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Tong, S.Y., Xu, G., Hu, W.Y., and Puga, M.W. J. Vac. Sci. Technol. B 3 (1985) 1076; Katnani, A.D. and Chadi, D.J. Phys. Rev. B31 (1985) 2554

141 Massies, J. T h h e de doctorat, UniversitC P. et M. Curie.Paris 1982 (F) 151 Drathen, P., Ranke, W. and Jacobi, K. Surf. Sci. 77 (1978) L62

161 Massies, J., Etienne, P., Dezaly , F. and Linh, N.T. Surf. Sci.

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(1980) 121.

m Larsen, P.K., Neave, J.H., van der Veen, J., Dobson, P.J. and Joyce, B.A. Phys. Rev. B27 (1983) 4770.

181 Pashley M.D., Haberern, K.W., Friday, W., Woodhall, J.M. and Kirchner P.K. Phys. Rev. Lett. 60 (1988) 2176.

191

Larsen, P.K. and Chadi, D.J. Phys. Rev. B37 (1988) 8282.

1101 Bohr, J., Feidenhans'l, R., Nielsen, M., Toney, M., Johnson, R.L. and Robinson, I.K. Phys. Rev. Lett. 54 (1985) 1275.

1111 Feidenhans'l, R. PhD Thesis, University of Aarhus- Denmark 1986.

1121 Feidenhans'l, R., Nielsen, M., Grey, F., Johnson, R.L. and Robinson, I.K.

Surf. Sci. 186 (1987) 499.

1131 Belzner, A., Ritter, E. and Schulz, H. Surf. Sci.in press.

1141 Robinson, I.K., Bohr, J., Feidenhans'l, R., Nielsen, M., Grey, F. and Johnson, R.L. Surf. Sci. Lett. in press.

I151 Claverie, P., Massies, J., Pinchaux, R., Sauvage-Simkin, M., Frouin, J..

Bonnet, J. and Jedrecy, N. Rev. Sci. Instrum. in press.

1161 Sauvage-Simkin, M-, Pinchaux, R., Massies, J., Claverie, P., Jedrecy, N., Bonnet, J. and Robinson, I.K. Phys. Rev. Lett. 62 (1989) 563.

1171 Robinson, I.K. Phys. Rev.B33 (1986) 3830.

1181 Sauvage-Simkin, M., Pinchaux, R., Massies, J., Claverie, P., Bonnet, J., Jedrecy, N. and Robinson, I.K. Surf. Sci. 211-212 (1989) 39.

I191 Srinivasa, R., Panish, M.B. and Ternkin, A.

Appl. Phys. Lett. 50 (1987) 1441.

1201 Gobil, Y.L., Cibert, J., Saminadayar, K. and Tatarenko, S. Surf. Sci.

211-212 (1989) 969 and Tatarenko, S.,Saminadayar, S. and Cibert, J.

Appl. Phys. Lett. 5 1 (1987) 1690.

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In conclusion, by monitoring the modification that the RAS spectrum of a clean decapped GaAs(001)(2 × 4) surface undergoes during the growth of a nearly epitaxial layer of silver,