Technological state of the art of SiC

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Submitted on 1 Jan 1993

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Technological state of the art of SiC

Stdphane Tyc

To cite this version:

Stdphane Tyc. Technological state of the art of SiC. Journal de Physique III, EDP Sciences, 1993, 3

(10), pp.1929-1929. �10.1051/jp3:1993113�. �jpa-00249054�

J. Pbys, III Iiance 3 (1993) 1929

1993,

1929

Classification Physics Abstracts 72.00 81.00

Comment

Technological state of the art of SiC Stdphane Tyc

Laboratoire Central de Recllerches, Thomson~csf, 91404 Orsay Cedex, France

(Received18 August 1993, accepted I September1993)

In

_{recent paper} ill, Locatelli and Gamal describe the technological state of the _art of SiC

compared with Si. I would like _to bear witness to the rapid advancement of SiC technology by giving

slighty updated account of SiC technology.

The boule growth of SiC

achieves diameters _up to 60

One of the _most problematic standing issues is the presence of micropipes in the wafers with

density of the order of loo cm~~

[2].

The doping _range available in epilayers is

wider. CAFE Research [3] accepts orders for

doping densities from 5

10~~ cm~~ _{to I}

10~~ cm~~ _in both N and P type. However their state of the art is better (we have received P type ^with doping 4

10~~ cm~3 _and N type with

doping

2

10~~ cm~~ and they have also delivered [4] ^N type doping of 5

lo~~ cm~~).

As for large P dopings, Dmitriev has published _[5] dopings

^{lo~° cm~3}

The specific resistance of contacts

N type layers has also rapidly improved. Kelner has published ^{results of 3}

lo~~ Ohm.cm~ _{with Ni contacts}

[6]> We have obtained with

molybdenum _[7] specific resistances of 2

lo~~ Ohm.cm~

epitaxies doped to 5

io~~ cm~3 This value should be rapidly lowered

higher doped layers

used.

In _sum, I do agree with the authors of iii that the technology of 6H SiC is rapidly advancing,

thanks to breakthroughs ⁱⁿ material growth and _to

wide ranging ^renewed interest in this material. The pace may actually be higher than hitherto realized.

References

ill Locatelli and Gamal, J. Pbys. III Iiance 3 (1993) l101.

[2] ^{Barret D-L- et} a1., ^Tenth Int. Conf.

Crystal Growth, San Diego, CA, ^USA 16-21 (August 1992).

[3] CREE Research Inc., 2810 Meridian Parkway, Durham, NC 27713, ^USA.

[4] ^Parrish M., private communication.

[5] ^Dmitriev

al., Ext. Abstracts of the Electrochemical Soc. Meeting~ 4, 89~2 (1989) 711.

[6] Workshop

SiC Material and Devices (Charlottesviue, September 10-11 1992) VA 22901.

[7] Tyc

a1., accepted

the ICSCRM (Washington _DC~ November 93).