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Spectral limits in the tight-binding approximation

F. Ducastelle

To cite this version:

F. Ducastelle. Spectral limits in the tight-binding approximation. Journal de Physique, 1974, 35 (12),

pp.983-988. �10.1051/jphys:019740035012098300�. �jpa-00208221�

(2)

SPECTRAL LIMITS IN THE TIGHT-BINDING APPROXIMATION

F. DUCASTELLE

Office National d’Etudes et de Recherches

Aérospatiales (ONERA)

92320

Châtillon,

France

(Reçu

le 15 mai

1974)

Résumé. 2014 On passe en revue les méthodes et théorèmes

principaux

qui permettent d’estimer les limites spectrales pour des systèmes décrits dans

l’approximation

des liaisons fortes. On donne

quelques applications concernant les métaux de transition, les alliages désordonnés et les semi- conducteurs amorphes.

Abstract. 2014 A brief review is given of some basic theorems and methods which

give

estimates of the spectral limits in systems described within the

tight-binding approximation. Applications

to

transition metals, disordered alloys and amorphous semiconductors are given.

Classification Physics Abstracts

8.120

1. Introduction. --- The

tight-binding approxima-

tion is

widely

used to describe systems

involving

electrons which are more or less localized on the atoms. In

spite

of the

approximations

made in the

simplest

schemes

(the assumptions

that the atomic orbitals are

orthogonal

and that the transfer

integrals

are

only important

between first

neighbours),

it

often leads to very convenient model Hamiltonians.

In

particular

this kind of model has been used often in recent years to describe disordered

systems

such

as disordered

alloys, liquids

or

amorphous

semi-

conductors.

It is well known that within the

tight-binding approximation

the bandwidth is

finite,

and that this

width is

mainly

determined

by

the value of the transfer

integrals.

When

dealing

with disordered systems, the Bloch theorem cannot be

used,

and it is in

general impossible

to calculate

exactly

the

density

of states ; it is therefore very useful to

dispose

of some theorems

which

give

the

regions

of the real axis where the

eigenvalues

of a

given Hamiltonian

must lie. As shown

by Cyrot-Lackmann [1]

and

by

Khomskii

[2],

two useful theorems in this context are the Perron- Frobenius theorem and the

Hadamard-Gerschgorin theorem,

but some other methods can also be used.

In this

article,

we want to

give

a brief review of

the basic theorems or methods which

gives

estimates

of the

spectral

limits and which do not

depend

on

the lattice

periodicity.

Some

portions

of this work

are not

actually

new, but we have

thought

that it

might

be useful to show that the various results obtained

recently

in this field are

straightforward

consequences of a very limited number of

general

theorems.

In section

2,

we recall ’the Perron-Frobenius theorem. In section

3,

we recall the Hadamard-

Gerschgorin

theorem and we

give

an extension of it well fitted to the

study

of

degenerate

d bands,

Section 4 is concemed with a method referred to as the scalar

product

method and section 5 is devoted to the min-max theorem of Courant and Fischer.

In these two last

sections, particular

attention is

paid

to the

applications

to disordered

alloys

and

amorphous

semiconductors.

2. The Perron-Frobenius theorem. -- The Perron- Frobenius theorem states that if all the elements

aij

of a matrix are

positive,

then the

eigenvalue Àmax

whose absolute value is maximum is

real, positive

and non

degenerate.

Moreover the

components

of the

corresponding eigenvector

may be taken to be

positive

and

Àmax

may be characterized as follows

[3], [4] :

:

where x varies over all non

negative

vectors different

from zero. In

particular

from

(2. 1)

we obtain :

As shown

by Cyrot-Lackmann [1],

this theorem

applies

in a

quite

natural way to

non-degenerate tight-binding

systems in which all the transfer inte-.

grals

are

negative.

It

gives

the well known result that the lowest energy in the spectrum is obtained for

Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphys:019740035012098300

(3)

984

a linear combination of atomic orbitals with

positive

coefficients

(bonding state) ;

furthermore it tells us that the absolute value of the lower bound is

larger

than

(or equal to)

that of the upper bound. For

example

let us consider a

periodic

lattice in which every atom has Z first

neighbours;

from

(2.2)

we

have :

where

fl

is the transfer

integral

between first

neighbours.

3. The

Gerschgorin

theorem and its

generalization.

- 3.1 THE GERSCHGORIN THEOREM. - The Gersch-

gorin

theorem is

equivalent

to the Hadamard criterion which

gives

a condition for a

determinant

to be diffe- rent from zero. The

proof

is so

simple

that it is worth

giving

it

explicitly [5], [6]. Let t/1

be an

eigenvector

of

the matrix aij

(with

components

t/1i)

and  the corres-

ponding eigenvalue ;

then :

and therefore :

Let us chose i such that

1 t/1i

=

max 1 j 1,

it follows

j

that :

Since the

inequality (3.3)

is satisfied for at least one

value

of i,

we may assert that is contained in the union of the discs centred on aii and with radii

Furthermore, by using continuity

arguments, it can be shown that if the union of p discs is a connected part of the total

union,

then it contains

exactly

p

eigenvalues.

In the case where an

off-diagonal

matrix

element aik is

larger

in modulus than the sum of the moduli of the other ones, we have also

[5] :

The

Gerschgorin

criterion

generalizes

a small part of the Perron theorem.,From

(3.3)

we indeed deduce :

which is to be

compared

to

(2.2).

Let us notice that eq.

(3.6)

may be considered as a

particular

case of a more

general result, namely :

where Il A II denotes

the norm of the matrix A which

is subordinate to some vector norm. Such a norm is defined

by :

Let us also define the p-norm of a vector x :

with the

particular

cases :

The

corresponding

subordinate norms are

[6] :

Il A Il 2

is of course the usual norm and is

independent

of the

basis,

which is not the case of the other ones.

, A subordinate norm has the

particular properties :

Let us now write

that §

is an

eigenvector

of A with

eigenvalue :

By taking

the norm of both sides

of (3.13),

we obtain :

which proves

(3.7).

Useful

applications

of the

Gerschgorin

theorem

have been

given by Cyrot-Lackmann [1] and

Khom-

skii

[2].

We shall now show that it is

possible

to

extend this criterion.

3.2 A GENERALIZATION OF THE GERSCHGORIN THEO- REM. - We shall try to

generalize

the

Gerschgorin

theorem in

allowing

the matrix elements aij to be square matrices. We have in mind a

degenerate tight- binding

system in

which q

atomic states are associated

with each site. The matrix of the Hamiltonian in the basis

generated by

these states is a block matrix in which each block is a q x q matrix. Let

Pi

be the

(4)

projection

operator which separates out all orbitals

on

site i,

and Â

and Çi

an

eigenvalue

of the Hamilto- nian H and its

corresponding eigenvector ;

then :

Using

the

simplified

notation

Hij for Pi HPj,

and

taking

the norm, we have :

where :

Now we take into account the

specific properties

of

our

model ;

that H is an hermitian operator and we

choose the usual norm in the Hilbert space defined from the scalar

product. Let pf

be the

eigenvalues

of

Hih

it is clear that :

and therefore :

We may now argue as in section

3.1 ;

we chose i in

such a way

that Il t/1i Il

=

max II ; II,

j which

implies

that :

Finally

we obtain :

which is the

required generalization

of

(3.4).

Let us

apply

this criterion to the case of a pure transition metal with coordination number Z. We

keep only

transfer

integrals

between first

neighbours separated by

a distance R. Then all blocks

Hij

are the

same,

H;;

=

H(R),

and we have :

Il H(R) Il

is

given by

the

largest

transfer

integral (in modulus),

that is

by 1 ddu 1

in Slater-Koster’s nota- tions

[7] ;

hence :

This result is the natural extension of the corres-

ponding inequality

obtained for non

degenerate

bands

in eq.

(2.3).

The main difference is that because the various transfer

integrals

included in

Hij

have different

signs,

we are no

longer

sure that the bound

Z [ ddJ 1

is

actually

attained. In

fact,

in three dimensions the

true bound is much smaller

(for example

in a FCC

lattice, 1 À Imax ~ 5 ) 1 ddu with

realistic values of the transfer

integrals [8]).

The one dimensional case is a

particular

one because the orbitals of different sym- metries do not

mix;

as a consequence the Perron theorem still

applies

for each sub-band and the bound

2 1 dda is

attained. This indicates that better bounds cannot be obtained in

general

without further information on the system. From

(3.20)

we can also

derive a criterion for the occurrence of a

crystal

field

splitting

of the bands. Let us assume that

Hu

has two

different

eigenvalues (which

would

correspond

to the

t2g and eg symmetries

for d electrons in a cubic envi-

ronment),

oc, and (X2, then a gap will

necessarily

appear

if 1 oc, - (X2 1 > 2 Z 1 dda [ .

Finally

it should be

pointed

out that

(3.21)

is still a

consequence of the

general

result

(3.7) provided

we

define a new

nonn Il H Il’ :

:

which is the norm subordinate to the

following

vecto-

rial norm :

4. The scalar

product

method. -- 4. 1 FORMULATION

OF THE METHOD. - When

dealing

with

physical

sys-

tems, we know that the Hamiltonian H is hermitian and therefore the

spectral

radius

(that

is the

eigenvalue

whose absolute value is

maximum)

is

equal

to the

usual norm defined

by (3.llb).

More

generally

we

may use the

properties

of the Hilbert space. In

parti- cular,

considerations based on scalar

products

may be fruitful as

explained

below. For

example,

let us

assume that H can be written as :

where

Ho

and V are hermitian

operators

whose

spectra

are known. Let

hi and

be the

eigenvalues

of

Ho and V, and 1 t/J

> an

eigenstate

of H associated with the

eigenvalue

À. From :

we obtain :

where we have assumed

that Il t/J Il

=

t/J 1 > 1/2

,-- 1.

But :

and

finally :

In the same way :

(5)

986

Equations (4.5)

and

(4.6)

are

equivalent

to the more

explicit propositions :

with :

4.2 APPLICATION TO AMORPHOUS SEMICONDUCTORS.

- As an

application

of the criterion

(4.7),

let us

consider the now well-known model hamiltonian for

amorphous

semiconductors used

by Thorpe,

Weaire

[9]

and others. We shall use here the notations of Friedel and Lannoo

[10] :

. The

state 1 iJ >

is the atomic

hybridized sp"

orbital

pointing

from site i

along

the bond J. The

positive promotion

energy

Ep - ES

is

equal

to -

(n

+

1)

d

and fl

is the

negative

transfer

integral.

The

spectra of Ho

and V are very

simple.

The

eigen-

values

hi and vi

are

given by :

Therefore

min 1 vi 1 = max 1 vi 1 = 1 P 1,

and the inter-

i i

vals

Di and di

have the same bounds. As a conse-

quence we realize at once that there is

always

a gap in the

spectrum.

This is clear if the intervals

Dl

and

D2

do not

overlap (that is d 1/1 PI> 2/(n

+

1)),

but

from

(4.7b)

this is also true in the other case because the interior of the intersection of the intervals is forbidden. From

continuity arguments

it is then rather obvious to count the number of states in each subband. In the atomic

limit P

--.

0,

the subbands have s and p character with the

weights

1 and n

respectively ;

in the other limit 4 -

0,

each subband

contains (n

+

1)/2

states.

Actually,

the Hamiltonian

(4.9)

is so

simple

that a

much more detailed

description

of the

spectrum

can be obtained rather

easily (see

references

[9], [10], [11]

for

example),

but the

advantage

of our criterion is that it allows

generalizations

to more realistic

models ;

for

example

we could take a distribution of transfer

integrals ;

it is clear that in this case the gap will survive in the covalent limit 4 - 0

provided

that

min 1 Vi 1 =1=

0.

i

Finally

let us put some

emphasis

on the

duality

of the

descriptions

from atomic orbitals and bond orbitals in this

problem.

In

(4.9)

the basis of atomic orbitals was

chosen,

but we

might

have taken a

basis of bond orbitals from which the

eigenstates

of V

are

easily

built up. This is

equivalent

to

exchange

the parts

played by Ho

and V. This

duality

is

quite

clear

if we rewrite H in the

following

canonical form :

Now V and

Jeo

have the same

property :

and we can still

apply

the criterion

(4.7)

where

H0 plays

the part of V and

conversely :

,with :

and

d’1,2

are the

corresponding

open intervals. Of

course from

(4.14)

we find the same gap as before.

4.3 APPLICATION ’TO DISORDERED ALLOYS. - We shall now consider the usual model hamiltonian for disordered

alloys :

This is a

simple tight-binding

Hamiltonian in which the disorder is introduced

through

a statistical distri- bution of the atomic levels El. As we may notice from the discussion of section

4.2,

the best bounds are

found when the

spectral

limits of V are

symmetric.

We assume that this is the case here. If this was not true, it would be sufficient to substract

from

Ho

and to add the same

quantity

to V. For

simplicity,

we also assume that there is no gap in the pure system described

by V,

so that

min 1 vi 1

= 0.

i

Therefore we are left with the

single

criterion

(4. 7a) :

which is the well-known theorem about spectra of disordered

alloys ;

the spectrum of an

alloy

is contained in the union of the spectra of the

alloy

components.

(6)

4.4 DISCUSSION. - The

proofs given

in section 4. 2

and 4.3 are not

actually

very different from those used

by

other authors. For

example,

Schwartz and Ehrenreich

[12] (for

the case of

amorphous

semi-

conductors)

and

Kirkpatrick, Velickÿ

and Ehren- reich

[13] (for

the case of disordered

alloys)

have

given

similar

proofs by using

the convergence proper- ties of series

expansions

of the resolvent

[14].

Both

methods are

equivalent

but the present one is

perhaps simpler.

It should also be

pointed

out that from the

previous

discussion

nothing

can be said about the

possibility

of the bounds to be

actually

attained. Further infor- mation can

only

be obtained from a detailed

analysis

of the

problem

under

study.

For

example

it can be

shown that the bounds in

alloys

are attained for a

perfectly

disordered

alloy [15], [16].

The

assumption

of

perfect

disorder is crucial. This is clear when

looking

at the

following example.

Let us consider an

AB

alloy

in which all A atoms have Z first

neighbours

of B

type

and

conversely,

as in a CICs

type

structure for

example.

The energy levels BA

and EB

are measured

from the centre of the

symmetrical

spectrum :

Let

PA(B)

be the

projection operator

which

separates

out the orbitals on

A(B)

sites. The Hamiltonian H

can then be written as

(1) :

If we notice that :

then :

so that the

eigenvalues

of H are

given by :

We find therefore that there is

always

a ap and that the extreme bounds are

given by

±

ô2 + II Y II2

which are smaller in modulus than the

corresponding

bounds of the disordered

system.

±

+

il V Il].

5. The min-max theorem. -- The min-max theorem of Courant and Fischer is a very

elegant

theorem

which

gives

a characterization of each

eigenvalue

of

an hermitian

operator

A

[18], [3].

If these

eigenvalues

are labelled in

decreasing

order :

then Âk

is

given by :

where

the y’

are

linearly independent

vectors.

(1) This formulation has been already used by Straley [17] in

the case of compound semiconductors.

If the

increasing order À 1

...

ÀN

is chosen the theorem becomes a max-min theorem. An

important

consequence of this theorem is that if we consider the

projection PiAPi = Ai

of the operator A into a

subspace

of dimension

N - i,

then :

Another consequence is that if a

non-negative

ope- rator B is added to

A,

then

This theorem has

already

been used

by

Thouless

[16]

to

give

a

general proof

of the theorem on bounds in disordered

alloys

mentioned in section 4.3. The basic idea is to notice that we can find a

projection

operator which

gives

the same

operator

when

applied

either to

the

disordered

alloy hamiltonian,

or to the

pure metal one.

(The operators PA

and

PB

defined in

section 4.4 fulfil this

condition.)

We will

apply

here

the same method to the

amorphous

semiconductor

problem.

Let

Ps

and

Pp

be the

projection operators

which

separate

out the s and p orbitals on each site. The Hamiltonian

(4.9)

can then be written as :

Let us define

H2

and

H3 by :

The

eigenvalues

of

Hi, H2

and

H3

are

Âp,

lip and vp

respectively.

Since nN is the dimension of the space

generated by the p

atomic states

(N

is the number of atoms, and the dimension of the whole Hilbert space is

(n

+

1) N),

we obtain froID

(5.2) :

But since L1

0, H2 - Hi

is non

negative,

and

(5.3)

leads to :

Finally

from

(5.7)

and

(5.8),

we get :

The

eigenvalues

of

H2

= V are :

(7)

988

and therefore

(5.9) gives :

This result is remarkable because it shows that there

are two ô functions in the spectrum

of Hl

with

weight

n 2 corresponding

to the

énergies that

is to

- L1

± p

for the spectrum of H. For these states

Àp =’ Jlp

= vp which proves that these states are

purep states. Of course this result is not new,

[9], [10],

but the present

proof

is a clear illustration of the

possibilities

of the min-max theorem. Furthermore there is no

difficulty

in

applying

if to more elaborate

models.

Let us now

study

the 2

N remaining

states.

Eq. (5 .11) gives

some

information,

but it can be

completed

if

we repeat the

previous

arguments

by using

the pro-

jection

operator into the s-space. We therefore define

H2

and

H3 by :

The

comparison

of the

eigenvalues Àp, /Zp

and

vp

of

Hl, H2

and

H3 gives :

hence :

Let us

forget

the à functions and relabel the 2 N

remaining

states. From

(5 .11 )

and

(5.15),

we get :

where :

Therefore we have

always

a gap whose width is

12 1 fl 1 - (n + 1) Id 11 .

.

It is rather obvious that we

might repeat

the same

proofs by starting

from a bond orbital

representation.

It is

easily

checked that the same result would be obtained once more.

Although

more

complete,

the

argument would be

actually

similar to that

given by

Heine

[19].

We

might give

some other

applications

of the

min-max theorem. For

example,

if we consider the Slater-Koster

problem

of a

single

localized

potential,

eq.

(5.2) gives directly

the familiar result that the

eigenvalues

of the pure system

separate

the

eigenvalues

of the

perturbed

system,

except

for one

eigenvalue

which may

correspond

to a localized state.

As a conclusion of this

section,

let us

point

out that

the min-max theorem enables us to recover all the results obtained in section 4. The min-max theorem is a little more subtle to

apply

than the scalar

product method,

but it

provides

us with results which are more

general

and

complete

as can be seen from the

previous example (see

also Thouless

[16]

for the case

of disordered

alloys).

6. Conclusion. -- The main conclusion which can be drawn from the

present study

is

that,

within a

tight-binding approximation,

we can in fact obtain a

substantial information on the

spectrum

without any reference to

periodicity.

It can also be said that the theorems we used are

particularly

well suited to the

tight-binding approximation

because in this case

advantage

is taken of a

representation

in real space.

These theorems have allowed us to recover some well known

results,

but due to their

generality they

can

lead to

straightforward

extensions as shown in some cases. There are

probably

many other

applications

to be

explored,

and it is

hoped

that this work has

some use in

stimulating

further researches in this field.

Références [1] CYROT-LACKMANN, F., J. Phys. C. Solid State Phys. 5 (1972)

300.

[2] KHOMSKII, D. I., Sov. Phys. Solid State 8 (1966) 1264. (Fizika Tverdogo Tela 8 (1966) 1592.)

[3] BELLMANN, T., Introduction to matrix analysis (Mc Graw-Hill, New York) 1960.

[4] GANTMACHER, F. R., Théorie des matrices (Tome 2) (Dunod, Paris) 1966.

[5] PARODI, M., La localisation des valeurs caractéristiques des

matrices et ses applications (Gauthier-Villars, Paris) 1959.

[6] WILKINSON, J. H., The algebraic eigenvalue problem (Claren-

don Press, Oxford) 1965.

[7] SLATER, J. C. and KOSTER, G., Phys. Rev. 94 (1954) 1498.

[8] DUCASTELLE, F., Thèse Orsay, 1972, published in Publication ONERA 144.

[9] THORPE, M. F. and WEAIRE, D., Phys. Rev. B4 (1971) 2508.

Phys. Rev. B4 (1971) 3518.

[10] FRIEDEL, J. and LANNOO, M., J. Physique 34 (1973) 115.

[11] JOHN, W., Phys. Stat. Sol. (b) 55 (1973) K9.

[12] SCHWARTZ, L. and EHRENREICH, H., Phys. Rev. B6 (1972) 4088.

[13] KIRKPATRICK, S., VELICKY, B. and EHRENREICH, H. Phys. Rev.

B1 (1970) 3250.

[14] KATO, T., Perturbation theory for linear operator (Springer Verlag, Berlin) 1966.

[15] LIFSHITZ, I. M., Sov. Phys. Usp. 7 (1964) 549.

[16] THOULESS, D. J., J. Phys. C. Solid State Phys. 3 (1970) 1559.

[17] STRALEY, J. P., Phys. Rev. B6 (1972) 4086.

[18] COURANT, R., and HILBERT, D., Methods of Mathematical

Physics Vol. I (Interscience Pub., New York) 1953.

[19] HEINE, V., J. Phys. C. Solid State Phys. 4 (1971) L221.

Références

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