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Surface, interface and bulk electronic structure of some Pd-Ti systems by a tight-binding method
Š. Pick, P. Mikušik
To cite this version:
Š. Pick, P. Mikušik. Surface, interface and bulk electronic structure of some Pd-Ti systems by a tight- binding method. Journal de Physique I, EDP Sciences, 1992, 2 (1), pp.121-133. �10.1051/jp1:1992128�.
�jpa-00246457�
Classification Physics Abstracts
71.20C 73.60D 73.90
Surface, interface and bulk electronic structure of
somePd-Ti
systems by
atight-binding method
I.
Pick and P. Miku§ikJ.
Heyrovskj
Institute ofPhysical Chemistry
andElectrochemistry,
Czechoslovak Academy of Sciences,Dolej§kova
3, 182 23Prague
8, Czechoslovakia(Received J7 June J99J, revised
J9August
J99J,accepted
J3 September J99J)Abstract.
Properties
of the bulk and (lll) surface of the Pd3Tialloy
and some related Ti-Pd systems are studiedby using
asimple
LCAO model. Thesign
andmagnitude
of core level shifts (CLS) atparticular
atoms are correlated with initial state effects. Considerablepositive
CLS arepredicted
for the surface andespecially
for the bulk Ti and Pd atoms,respectively,
in the Pd3Tiphase. Origin
of these CLS as well as their relation toexperimental findings
are discussed. Localdensities of electronic states are also
presented.
An attempt to draw somegeneral
conclusionsconceming
other bimetallic systems withsplit
d-bands is made.1. Introduction.
The structure and behaviour of transition and noble metal
overlayers
on another transition metal surface have been studied mostintensively during
several last years,especially
for latetransition metals
deposited
on substrates from the central part of the Periodic Table[1-7].
Itseems that gross trends can be often rationaliZed
by using
rules derived from thecorresponding
elemental metalproperties
and from their mutualalloying ability [8-9]. Yet,
the present state of the art in this respect is not able to cover thevariety
of all the effectsrevealed
by experiments.
In the present paper, we address a
problem
which is in a certain sense reversed.Namely,
weare interested in the
deposition
of Ti atoms on the late transition metal Pd surface and we consider also a moregeneral
scope ofquestions
of methodical character related to it. It isclear, however,
that the two kinds of systems have a number ofproperties
in common. Let usmention
positive
core level shifts(CLS)
anddepletion
of d-states at the Fermi level for the late transition metal atoms.A combined
XPS,
UPS and XAESexperiment [10]
revealed(especially
in the Ti on Pdcase)
well markedchanges
in the valenceregion
characterizedby
more or lesssplit
d-bands andaccompanied by large
CLS for both kinds of atoms. Toexplain
thissituation,
formation of thePd3Ti alloy
at theearly
stages of Tideposition
has beensuggested
in reference[10].
The
argument
was thesimilarity
with thespectra
of bulkalloy samples
foundby
other authors[11, 12].
There is another reason which makes Pd-Ti systems
interesting. They belong
to thelarge
class of
split
d-bandalloys (I.e. alloys
ofearly
and late transition metal elements[13])
electronicproperties
of which show distinct similarities, Forexample,
foralloys
ofNi, Pd,
Pt and noble metals with theearly
transitionelements, significant positive
bulk CLS on bothconstituting
atoms arereported
in wide range of concentrations.Although representative
bulk electronic structure calculations
[14, 15]
andexperimental
data[13, 16]
areavailable,
theunderlying physics
is notcompletely
understood. Thecorresponding
information on surface and interfaceproperties
of similar systems is more modest and is restrictedessentially
to thesystems
quoted
at thebeginning
of this section. To get aninsight
in theproblem,
the present authorsperformed simplified
d-bandtight-binding
calculations of the bulk and surface electronic structure for several Ti-Pd systems. Somepreliminary
results forPd~Ti
arepresented
in[17]. Similarly
as other authors[7, 13, 16, 18, 19],
we suppose that there is a close correlation between CLS and initial state effects in thephotoemission,
which is controlledmainly by
thechange
of the local electrostaticpotential.
The local densities of valence electronic states(LDOS)
for bulk and for surface atoms are alsogiven.
Thepicture
we obtainshows marked
regularities
and wehope
thatthey
can behelpful
also in elucidation ofproperties
of otheralloys
withsplit
d-bands.2. The model.
2.I GEOMETRICAL CONSIDERATIONS. Since the geometry of Ti adatoms on the Pd
polycrystal
is notknown,
we have to make a choice of structures to be studied. Due to itshigh stability,
the dense(ill)
surface arrangement islikely
to bestatistically significant
for thepolycrystalline
Pdsample. Below, only
the(I
II)
surface is considered. It is natural to start up with apseudomorphic (I
xI)
Timonolayer
onPd(I II).
Since the metallic radius of Ti is about 6 fbbigger
than the Pdradius,
theoverlayer
will be strained. To reduce the surface-subsurface stress, we suppose that the surface Ti subsurface Pd nearest
neighbour
distance isequal
to the sum of thecorresponding
atomic radii(Vegard's law).
The sameassumption
ismade also in other cases
presented
below. It isbeyond
the scope of the presentstudy
tosuggest
any rearrangement of the Timonolayer
with the surfacecompressive
stress reduced.Note that for the above ratio of metallic
radii,
the(I
xI) overlayer
can stillbe, generally speaking,
stable[8, 9].
For methodical reasons, we find useful to consider also the(I
xI)
Pdoverlayer
on the(I II)
face of thehypothetical
fcc Ticrystal.
Now, the Pdoverlayer
isexpected
to be under tensile stress.To assess the idea of surface
alloy formation,
we have studied also thePd~Ti monolayer
deposited
onPd(I
II).
Thegeometry
of themonolayer
is identical to that of the(I II)
surface of thePd~Ti alloy (Fig. I),
which is also considered. The latterpoint
needs anexplanation.
There is a
family
ofclosely
relatedA~B
structures which differby stacking
of the(I II) A~B planes [20, 21].
ThePd3Ti crystal belongs
to thelong-period D024
class with thecombined
fcc&hcp stacking (-A-B-C-B-A-).
It isaccepted [14, 15]
that the DO~~
phase
is wellapproximated by
a moresimple L12
structure with the fccstacking (-A-B-C-A-),
and weadopt
thispoint
of view. Let us mention that the lattergeometry
is stabilized for thePd4Ti stoichiometry [20, 21].
Interatomic distances in thePd~Ti
intermetalliccompound
are thesame as in the Pd
crystal.
This factpoints
to a strong Pd-Ti bondforrnation,
which is confirrned alsoby
the considerableenergetical
stabilization0.8eVlatom [22]
due to thealloying. Naturally,
one should admit that among the above surface structures some may beunstable with respect to either
segregation
or some kind of surface reconstruction.Nevertheless,
our results can shedlight
on theinterpretation
ofexperimental
data and are of methodical interest. To enable CLSinterpretation,
calculations for the semiinfinitePd(I II)
crystal
and bulkhcp
Ti metal were alsoperforrned.
o o
O .
O
. o
o O
Fig.
I. The (III) surface cell of theA3B alloy
in theLl~ phase
(see the text). Atoms in the second and thirdlayer, respectively,
arerepresented by
circles of reduced size.2.2 THE METHOD oF CALCULATION. The well known d-band model of transition metals
and
alloys [9]
wasemployed
and studiedby
the standard recursion methodtechnique [23].
Twelve moments of the electronic Hamiltonian were evaluated
exactly (I.e.
withoutbeing
influenced
by
any kind ofsimplifying boundary conditions)
for all orbitals of interest. The Hamiltonian of Pettifor[24]
was rescaled to obtain the correct Ti and Pd bandwidth[25].
Wesuppose the
R~~
distancedependence
of matrixelements,
and the matrix elementsH~B
between two different atoms aregiven by
the formula[9]
HAB (R
=(HAA (R ) HBB (R
)~'~(l)
In
(semi) empirical schemes,
anuncertainty
about the d-electron count atparticular
atoms ispresent.
ForPd,
the proper choicegiving
the correctposition
of the Fermi energyE~
with respect to the bulkdensity
of electronic states isN~
= 9.4
[26] (in
Ref.[3],
N~
=
9.5 is
used).
ForTi,
the LMTOtheory [27] predicts N~
~
2.5. It is
possible, however,
that the choice
N~
3 is more convenient[28]
in LCAO models. We haveaccomplished
theanalysis
for both the above values. Since the results do not differessentially, only
theN~(Ti)
= 3 case is
presented
in detail below.Before the self-consistent
procedure
isdescribed,
one should touch upon theionicity problem.
There is no doubt that somecharge
transfer takesplace
in transition metalalloys, although
it is believed to be small. Itsquantification
is obscuredby
the presence ofcharge
in theout-of-sphere region
as well asby
thelong-range
tail of some orbitals. Hence, tointerpret
the results of elaborate
calculations,
one must be very careful not to getpicture
which is at variance with the traditional lore[29].
It ispostulated
in alarge
class of models that thecharge
transfer can be treated
by changing-self-consistently
the local atomic d-levels(diagonal
matrix elements of theHamiltonian)
e,by
the term, say,&e,
=UQI,
whereQ;
is thecharge
at the site I(cf.
Refs.[3, 30]).
Needless to say that onempirical
level, thisapproach
is not free fromsome
ambiguity,
and this flaw is reinforced for semiinfinitecrystals
where itleads,
as arule,
topresence of extended
charged regions. Here,
weadopt
anotherapproximation (minimal
polarity hypothesis [30]) imposing
the localneutrality
conditionQ,
= 0
[9].
Thecharge neutrality
is achievedby adjusting self-consistently
the values e~ of the local atomic levels. Inanalogy
withRh3Ti
system, we expect thehighest (positive) charge
on Ti atoms(0.3
in[15]).
However, there is a very
high density
of Ti electronic states n;(E~)
atE~ [14] (see
alsobelow)
and the obvious guess&e; Q,/n,(E~)
shows that thecorresponding
corrections are very small. Moredangerous
in this respect are rather Pd atoms inPd~Ti,
both in the bulk and at thesurface,
due to the lowdensity
of electronic Pd states atE~.
Technically,
all the levels e, in first four atomiclayers parallel
to the surface areadjusted
self-consistently,
and the values from the fourthlayer
are transferred todeeper layers.
In otherwords,
we treat the fourthlayer
as bulk. Thisapproximation,
which isquite
reasonablein the
light
of availablemodels,
is furtherjustified
aposteriori by finding
small differences for third and fourthlayer
CLS in most cases.Depending
on the number ofnonequivalent
atoms at thesurface,
four oreight
parameters are to be foundself-consistently
in our model. We fix e~ m 0 for bulk atoms(Pd
atoms in thealloy).
In every self-consistentcycle,
we find firstE~ by iterating
theequation AE~
=
AN~/n~(E~)
for the bulk atom unless the accuracy AN ~ ~ 0.005 is reached,Here,
AN~ is the error in the
occupation
number. In the case of thePd~Ti
systems, sevenindependent
e, values are foundby iterating
the guesshe,
=
c
AN,/n, (E~)
unless£ AN,
~K,
where K=
0.03,
and similarprocedure
with K=
0.02 is
applied
to the other systems. The choice c~ I is recommended to reduce thedanger
of oscillations in the iteration process. For toolarge
values ofhe,
andAE~,
a cut-off isimposed
from the same reason. The convergency was not too sensitive to the
input
guess ofe;-values.
2.3 COMMENTS oN THE ELECTRONIC STRUCTURE. Transition metal
binary alloys
withsplit
d-bands represent an
intensively
studied group of materials. It appears thatLDOS,
which isdominated
by d-electrons,
has an universal character[14, 15].
Theminority
atom LDOSforms a
high-density partly occupied peak.
These B-states do not resemble a « textbook » resonance,however,
since B-derived featuresoriginating
from the A-Bhybridization
are well apparent in theoccupied
A-bandregion.
The two band systems areseparated by
adip
in LDOSwhich, similarly
as for many otheralloys
andcompounds, points
to the A-B bondformation. The late element LDOS is
pushed
to lowerenergies
which isagain
an indicative of the covalent bondcomponent [31].
It should not be overlooked that a part of the A-atomLDOS appears well above
E~
due to the A-B interaction. A similar behaviour of theoverlayer
LDOS is
typical apparently
also for the systems mentioned in the Introduction. The reduced localdensity
of electronic states atE~
can cause adrop
in the surface chemicalreactivity [2].
Let us
shortly
dwell on the well knownexpression [32]
E~
&E,
=
E
&n, (E )
dE(e, N~, ) (2)
for the electronic
(or band)
energyE, change
at the site I. Inequation (2),
n, is the d-electronLDOS, N~,
is the d-electronnumber,
and e; is the local atomic level(Coulomb integral)
at theatom I. It is obvious that the electronic energy can not be obtained
correctly by
this forrnula for late transitionelements,
for which thesp-d hybridization
is essential[32, 33]. Nevertheless,
there is some indication
[5, 13]
that the energy ofalloying
can be assessed within the d-band modelby using
theequation (2).
Let us mention that for the systems westudy,
Ti atoms arecompressed,
as a rule, due to a misfit between the Ti and Pd covalent radii.Neglecting
thisfact,
an overestimation of the energygain
due toparticular
structure forrnation isexpected.
2.4 CORE LEVEL SHIFTS,
Analysis
of core level shifts offers an invaluable tool of localchemical and
physical analysis
of solids and molecules. It isembarrassing
that somepoints
essential for CLS
interpretation
are still not settled. Theopinion
iswidespread relating
CLS to initial state effects[7, 8, 13, 18, 19, 34]. According
to thisapproach,
CLS reflectmainly
the localchange
of the electrostaticpotential.
If it isreally
so, the electrons in thehighest
corelevel states of transition metal atoms should
experience
similar effects like the localized valence d-electrons[13, 34],
see also[16].
In
tight-binding models,
the localpotential changes
coincide with the shift of local atomic levels(Coulomb integrals) &e,
introduced in the section 2.2. Since core electronbinding
energies
are measured with respect toE~,
weidentify
CLS with thequantity (e; E~).
The
negative sign
respects the conventionascribing positive
value to CLS tohigher binding
energy, Another successful
empirical theory [8, 35]
based on atherrnodynamic
Bom-Habercycle
takes into account the holescreening
in the finalphotoemission
state. It has beenargued [18, 19], however,
that areinterpretation
ispossible
thatbrings
thistheory
back to initial stateeffects. To
summarize,
in the absence of consensus on the CLSinterpretation
weemploy
oneof the two most
popular
and fruitfulapproaches,
which is known toyield
as a rulesatisfactory
results.
Within the framework
just specified,
the clue to CLSunderstanding
lies in the valence d- state behaviour. To describeit,
apicture
based on low order moments of the electronicHamiltonian
[23]
isproposed
here. When scrutinizedmerciless,
it can appear to besimplistic
since the
density
of electronic statesundergoes
rather drasticchanges
as a result ofalloying.
We
believe, nevertheless,
that basicqualitative
features may begrasped
in this way.First,
let us consider the local d-band width at the atom A. It is known thateffectively
it isproportional
to the square root of the(centered)
second momentm~=£H(B.
IfB
m~ is reduced e.g. due to a lower
coordination,
the band narrows and the electroniccharge
on atom A from theright (left)
part of the PeriodicSystem
tends to be increased(decreased).
The
corresponding
CLS oppose thecharge
transfer. This isprecisely
the surface bandnarrowing
effect describedby
a number of authors[8, 18].
Foralloys,
one shouldkeep
in mind that the bandnarrowing (or widening)
is controlled alsoby
thepossible
nearestneighbour
distance variation andby
theH~B magnitude (see Eq. (I))
which can differ agood
deal from the
respective
elemental metal values.The even-order moment m~ bears inforrnation
only
on those local d-band features whichare
symmetric
with respect to the centre ofgravity
of thecorresponding
LDOS. Forcompounds
andalloys
withsplit
bands such a symmetry is violated much more than forelemental metals. The
antisymmetric
component of the LDOSshape
is describedby
odd-order moments of energy. In the most
simple approximation,
the asymmetry and the localgeometry are linked
together by
the third moment m~[25].
Theantisymmetric changes
are,generally speaking,
mostpronounced
in the off-centreregion
of the LDOS. If thedensity,
say, narrows in its lower
part
due to the m~change,
it is widened on theopposite
side. To getsome idea on the direction of these
effects,
formal mathematicalmanipulations
are necessary.Let us chose a
neighbour
B of the atomA,
and let us make itspotential
morerepulsive by increasing
the parameter e~by &eB~0, keeping
theremaining
parameters fixed. As a consequence, m~(evaluated
at the siteA)
will increaseby H(B &eB.
Thephysical
intuition suggests that thecharge
on atom A should increase and that isundoubtedly
true forE~
situated well inside the d-band of atom A. Moreformally,
this conclusion is corroboratedby
the so-called odd-ordergeneralized
HUckel rule[36]
valid for systems withroughly
half-filled set of electronic levels.
(This
rule can bereadily expressed
in terms of the moments[37].)
On the otherhand,
the theorem of reference[38]
proves that it can not be the case forgeneral position
ofE~. Namely,
the theorem asserts that thecharge
variation&N~
at the site A causedby &m~ changes
thesign
twice(at least)
when it is considered to be a function ofE~.
This result isequivalent
to thepicture
when the inducedchange
of LDOS is anantisymmetric (see above)
function of energy and has three zeros inside the allowed energy interval.Naturally,
the mathematical theoremgives
no hint about the moment when switch from the « normal »(&N~/&eB
~0)
to the « anomalous »(&N~/&eB
~0) charge
redistribu- tion takesplace.
To avoid aconfusion,
let us note that intwo-component systems,
both thesealtematives can occur
simultaneously
for either kind of atoms. This is becausetogether
with the interatomiccharge transfer,
also a redistribution betweenoccupied
and empty statesbreaking
theglobal charge neutrality
takesplace
if not correctedself-consistently.
On the basis of several numerical tests, we
expect
that the « anomalous » mechanism in systems withsplit
d-bands can beoperative
for a limited number of transition metal atoms such as those from the veryfight
of the Periodic Table(and perhaps
also for noblemetals).
Namely, by replacing
Ti atomsby
atoms withhigher N~ value,
andespecially by substituting
atoms with
N~
= 9 at Pd
sites,
thepositive
CLS at Pd-like atoms are reduced or evenchange
the
sign.
Both the abovechanges
suppress them~-value
and theN~(Pd )
reductionbrings
onecloser to the « normal »
charge
redistributionregion.
Forexample,
forPt~Ti
withN~(Pt)
=
9,
we find CLS 0,I eV and 0.2eV at the surface and at the bulk Pt atom,respectively (cf.
Tab. I forPd3Ti values).
The CLS values at Ti atoms seem to be less sensitive. The trendjust
described agrees with theexperimentally
observed CLS[7, 13, 16].
The « anomalous » mechanism represents a
specific
kind of «bandwidening».
In thesituation described
above,
certain amount of electronic states fromvicinity
of the upperedge
of the atom A d-band is
«pumped»
into the atom B band aboveE~
due to the A-Bhybridization.
As a consequence, the atom A is bereft of somecharge.
« Normal » or« anomalous » CLS
correspond
to the self-consistent corrections &e~bringing
the atom back to theapproximate charge neutrality.
Let us stressthat, generally,
both the second and thirdorder moment effects are to be considered at
equal footing.
Table I. Core level
shifts (in eV) for
Pd and Ti atoms inlayers
1-4for
the systems considered in the present paper. For thePd3TilPd
III)
system andlayers 2-4,
the Ti rowscorrespond
toPd atoms in the Ti-like
positions
in theL12
structure(Fig. I).
Forshills
tohigher binding
energies,
the valuesof
CLS arepositive.
Layer
Pd(
I I I TilPd I I I Pd/fcc Ti(
I I IPd~Ti (
I I1) Pd3TilPd (1 11)
0.2 0.3 0,I Ti IA IA
Pd 0.5 0,1
2 0 0.3 0.3 Ti 1.6 0.4
Pd 0.8 0,1
3 0 0,1 0 Ti 1.6 0.2
Pd 0.9 0,1
4 0 0 0 Ti 1.6 0
Pd 0.9 0
3. Results and discussion.
In
figures 2-7,
LDOS for various Ti-Pd systems arepresented. They correspond
to the d- electronoccupation N~
=
3 for
Ti, although
forN~
= 2.5 the results arequite
similar. The LDOS we have obtained conform with the situation sketched in section 2.3nevertheless,
severalpoints
are worth of further discussion.For the
Pd3Ti alloy,
we find a veryhigh
Ti LDOS atE~.
A similar feature is obtained alsoby
other authors[14].
The Ti LDOS value atE~
shown infigures
3 and 4 canhardly
beaccurate due to the
semiempirical
character of our model. On thecontrary,
the Pd LDOS atE~
is verylow,
both for the bulk and surface. Inanalogy
to[2]
one canspeculate
that the%RMl
~'~
~RMI
~
L£4L
>
I
fl
~
~s>
m @
~i ~
O $
O -, q/
~ , tn
, , O
, , a
, ~
, , ,
i ,
, '
-4 -2
E(eV) -4 -2
E(eV)
~~~. ~.
Fig.
3.Fig.
2. The localdensity
of electronic states (LDOS) for the bulk (full line) and (III) surfacelayer
(dashed line) of Pd.Fig.
3. Bulk LDOS on the Pd (full line) and Ti (dashed line) atoms in the Pd~Tialloy.
FERMI LEVEL
~
~s'
§
fl )(3 ii
$
a
~ ~j
E(eV)
Fig.
4. Surface LDOS on the (I II) Pd (full line) and Ti (dashed line) atoms in the Pd3Tialloy.
resulting
chemical reactivities of Pd and Ti atoms at thePd~Ti(
III)
surface are much differentmutually.
There is a surfaces~ift
of Pd LDOS tohigher energies
ascompared
with the bulkPd~Ti (cf. Figs.
3 and4)
which is apparent for the surface feature at about 1.5 eV belowE~.
We suggesttentatively
that to these LDOSchanges
contributes also anoccupied
surfacestate band formation. Accurate location
(or lack)
of similar features atalloy
surfaces inangle-
resolved
photoemission
spectra would behelpful
forunderstanding
the surface electronic-4
E(eV)
Fig. 5. LDOS on the surface Pd (full line) and Ti (dashed line) atoms in the Pd3Ti
monolayer
on the Pd I I I) surface.~RMI L£4L
~s>
@' m ,,
@ ,
, '
~ ,
3 '
m ,' ,
~"
, ,
, ,
Ul ,
O ,
a '
~ "~~" '_,"
' ,
,' ,
, '
-4 -2
E(eV)
Fig.
6. LDOS on the surface Ti (dashed line) and subsurface Pd (full line) atoms in the system TilPd (I Ii).properties.
We have found for the intermetalliccompound Pd~Ti
markedpositive
CLS for both bulk and surface atoms, inrough agreement
with the availableexperimental
data[10- l2]. Nevertheless,
thesurface component
of core level shifts isnegative (I,e,
thepositive
CLS at the surface are smaller than those in thebulk)
inanalogy
to the late transition metalcrystals [39-41].
For thesecrystals,
Tamm surface statessplit
off from the top of flat d-bands due to the surfacepotential change [40].
Hence, one canspeculate
that similar surface states couldexist below
E~
atPd~Ti
surfaces as well. Thishypothesis
is corroboratedby
several reasonsI)
flat d-bands and adip
in LDOS above them exist forA3B alloys [15], 2)
the formation ofsurface states is
usually
facilitatedby
the A-B interaction in similar situations[42], 3)
similar surface states are found also for the ordered NiAl[43]
and Cu-rich CuAl[44] alloy
surfaces.For all systems considered
here,
the Pd LDOS from theE~ vicinity
ispushed
to lowerenergies.
This is a behaviourindicating
that Pd states arebecoming bonding
with respect tothe Pd-Ti interaction. A
specific
LDOS modification is found for the bulk(and
also~RMI LEVEL
>~s
~'
m
$~
~ "
m ' '
~" J ',~
' j
tn ,
O i
O '
~ ' ,
" i
,' ,
," ,
-2
E(eV)
Fig. 7. LDOS on the surface Pd (full line) and subsurface Ti (dashed line) atoms in the system Pd/fcc Ti ( II1).
subsurface)
Pd atoms inPd~Ti only. Namely,
the lower dominant Pdcrystal
LDOS structure at 3 eV belowE~
is shifted due toalloying
toconsiderably higher binding energies (the
lowermaximum more than
by
IeV,
cf.Figs.
3 and4)
and is widened.Up
to a smalldiscrepancy conceming
thepositions
of the two abovepeaks
belowE~,
the behaviourjust
described wasobserved in the
photoelectron spectra [10]
after Tideposition
on thepolycrystalline
Pdsurface. When
comparing
calculated andexperimental
LDOS one should realize thatphotoionization
cross section for Pd 4d electrons isby
two orders ofmagnitude larger
than for the Ti 3d ones[45].
The electronic epergy values based on
equation (2) point
to a considerable energystabilization due to the Pd-Ti interaction. For
example,
weget
a rather stabilization 0.8 eV per atom due to thePd~Ti alloy formation,
inagreement
with the available data[22].
The CLS obtained for
N~(Ti)
=
3 are
given
in table I.(For N~(Ti)
=
2.5,
we find in thePd~Ti alloy
the value 1.6 and 1.7eV for Ti atoms in the surface and indeeper layers, respectively.
Other differences aresmall.) Below,
we argue that the basic trendsdisplayed
in table I follow the concepts introduced in thepreceding paragraph.
To thisgoal,
let us note that the Pd-Ti matrix elements for thealloy
are about 25 fbbigger
than the Pd-Pd ones for thepalladium metal,
andthey
areroughly
the same as the matrix elements for the elemental Ti.These data follow from
equation (I)
and from the fact that the Pd-Ti nearestneighbour
distance is
practically
the same as in the Pdcrystal [21].
On the fccTi(I II) surface,
the interaction between Pd adatoms is reduced due to alarger
metallic Tiradius,
andjust
reversed situation takes
place
for Ti onPd(I II).
As a consequence, the second moment m~ and the local bandwidth areenlarged
for Pd andessentially
conserved for Ti bulk atom inPd~Ti,
ascompared
with the pure Pd and Ti case,respectively.
For Pd atoms onTi(I
II),
we have an essential bandnarrowing,
with more or less moderatechanges
at surface atoms in theother Pd-Ti systems considered here. If there were no other
effects,
the common bandnarrowing (and widening) arguments
wouldpredict positive
CLS for Pd bulk atoms in thealloy
and for Ti adatoms on Pd andPd3Ti(1II) surfaces,
whereasnegative
CLS would beexpected
for surface Pd atoms,especially
in thePd/TI(I II)
case.Actually,
thispicture
is correctonly
for thePd(I II)
surface[8, 18].
The bandwidthchange
considerations have to be combined with thecharge
redistribution effects associated above with the third moment m~. ForTi,
we have the normal situation consistent with the traditionalelectronegativity
arguments, and for Pd atoms the « anomalous » mechanism is
operative. (Roughly speaking,
the
charge
tends to flow from Ti onto Pd atoms, and from Pd atoms it ispushed
into emptystates above
E~
when Pd and Ti arebrought
intocontact.) Hence, positive
contributions to CLS(making
the localpotential
moreattractive)
appear for both Pd and Ti to prevent apronounced charge neutrality
violation. Atparticular
atom, this contribution increases with the number of unlikeneighbours
it has.Inspecting
the tableI,
we check thattaking
intoaccount the two mechanism
proposed,
all the gross features arrived at can be understood.Let us tum now to the
comparison
with theexperimental
data.According
to references[I1,
12, 16],
CLS for the bulk Pd and Ti atoms inPd~Ti
are 0.6-1.3 eV and0.5-0.9eV,
respectively.
This is inapproximate
agreement with the resultsgiven
in table I.(By allowing
some
charge
transfer from Ti onto Pd atoms, we should obtain somewhat smaller CLS atTi, together
with some CLS increase at Pdatoms.)
Acomparison
withexperimental
CLS data shows that our results can also havebearing
on thesystems
mentioned in the Introduction. As it can be inferred from the recent literature(see,
e-g.[46, 47])
CLSinterpretation
is a ratherdemanding
task forcomplex
systems, and in this respect our results areencouraging.
Note that in references[11, 12],
discussion of CLS inPd~Ti
based on the Bom-Habercycle
andscreening ability
of electrons in thealloy, respectively,
isgiven.
In the
study
of Ti on Pd[10],
the measured CLS are 1.2 eV and 1.3 eV for Pd 3d and Ti2p levels, respectively.
Constant andequal
FWHM(full
width at halfmaximum)
of the two Pd3d5/2 Peak
components(separated by
1.2 eV for all Ticoverages)
make presence of ahighly irregular
structureunlikely.
Note also that theAuger
spectrainterpretation [10]
is consistent with theprevailing
contribution to CLS from the initial state effects. Thecomputed
CLS
(Tab. I) prefer clearly
the existence of a(possibly thin)
Pd-Tialloy
film at the Pd surface in theexperiment [10]. Supposing
that thePd~Ti phase
or anotherphase
with similarstoichiometry
not considered here isformed,
wepredict pronounced positive
CLS for both Pd and Ti in agreement with theexperimental findings.
All these facts corroborate the idea
[10]
about a kind of Pd-Tialloy
formation on Pd surfaces. Also otherarguments
in its favour can begiven.
Surfacealloy
formation isphysically
well
possible
mechanism[9],
cf, also the situation in the Pt on Re systemII-
It isinteresting
that model calculations
(see
Tab,12 of[9]) predict
Pd-Tialloying
atPd(001).
Thecomparatively large
covalent radius of Ti can be another factordiscriminating
the pure surface Tiphase
in thin films. Surfacealloying
in similar systems isprobable, although
it isgenerally expected
to commence attemperatures higher [1, 48]
than the room temperatureconditions of the
experiment [10].
Comments on the kinetic side of theproblem
are,unfortunately,
out of reach of our methods.We were
suggested by
one of the referees to consider also the case of isolated adatoms. This is agood
ideaenabling
us further illustration of the m~ role. We considerPd/fcc Ti(
III)
andTilPd(ill)
systems withquasiisolated
adatoms(0.25 monolayer coverage) forming
thep(2
x2)
pattem(«black» positions
inFig. I).
Thecorresponding
LDOS aregiven
infigures
8 and 9. Thehigh
LDOS atE~
for Ti adatoms onPd(I II) points clearly
to theirhigh reactivity.
In this case,roughly speaking,
a surface d-resonance is formed on adatoms[3]
and this process is dominatedby
the bandnarrowing,
thesigns
of CLSobeying
thecorresponding
predictions.
For Pd adatom onTi,
we findnegative
CLS 0.5 eV and for Ti on Pd thepositive
value 1.2 eV is obtained. CLS on thePd(I
II substrate surface are 0.5 eV for Pd atoms with no Ti nearestneighbours,
and 0. I eV for Pd adatomsadjacent
to Ti atoms. At the Ti subsurface we find the value 0.25 eV for all surface atoms(with respect
to the bulk atom in the fccstructure).
One canspeculate
about the d-electron count rise at Pd adatoms due toe.g.
ionicity,
which in tum would make thecorresponding
CLS lessnegative
or evenpositive.
This
effect,
if strongenough,
would lead to alarge
downward shift of the d-resonance[3].
It is clear,however,
that thecomparison
with theexperiment [10]
is not favourable. Wespeculate
rather that adatoms at low coverage form islands or some kind of surface clusters
including
perhaps
also the substrate atoms.-2
E(eV)
Fig.
8. LDOS on the Pd adatom (full line), on the substrate Ti atomadjacent
to it(long-dashed
line) and on the surface Ti atom with no Pdneighbour
(short-dashed line) in the system p(2 x 2)/fcc Ti II1).12
(
~s' fl
$
$
~'
O
a Ii
~ l I
,,J
J
/ '
/ /
-4 -2
E(eV)
Fig.
9. LDOS on the Ti adatom (short-dashed line), on the substrate Pd atomadjacent
to it (full line) and on the surface Pd atom with no Tineighbour (long-dashed
line) in the systemp(2
x 2)/Pd (111).The
qualitative picture emerging
from our models is in agreement with results of other authors[7, 13, 16].
We expect in bimetallic systemsgenerally non-negligible positive
CLS onNi, Pt,
noblemetal,
andespecially
on Pd atomssupposing
that the other constituent atombelongs
to the left-hand part of the Periodic Table. Nocharge
transfer(ionicity)
isassumed, although
the latter effect could beimportant
in an accurate CLS evaluation. Some othertrends in CLS behaviour can be rationalized
by using
the above m~ and m~analysis.
Note added in
proofs
In both the Pd adatom on Ti and the Ti adatom on Pd
systems
we have verified that CLS and adatombinding energies
arepractically
the same for fcc andhcp adsorption
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