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Electric-field effect on coercivity distributions in FePt magneto-electric devices

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Figure

FIG. 2. Coercivity distributions measured under gate voltages of (a) ± 1V, (b) ± 2V, (c) ± 3V and (d) ± 4V
FIG. 3. Coercivity distributions and hysteresis loops measured under gate voltages of ± 4V and 0V in as-fabricated (a,b) and annealed (c,d) devices

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