Single-frequency diode-pumped semiconductor laser tuned on a Cs transition

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HAL Id: hal-00534735

https://hal-iogs.archives-ouvertes.fr/hal-00534735

Preprint submitted on 10 Nov 2010

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Single-frequency diode-pumped semiconductor laser tuned on a Cs transition

Benjamin Cocquelin, Gaëlle Lucas-Leclin, Patrick Georges, Isabelle Sagnes, Arnaud Garnache, David Holleville

To cite this version:

Benjamin Cocquelin, Gaëlle Lucas-Leclin, Patrick Georges, Isabelle Sagnes, Arnaud Garnache, et al.. Single-frequency diode-pumped semiconductor laser tuned on a Cs transition. 2010. �hal-00534735�

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Single-frequency diode-pumped

semiconductor laser tuned on a Cs transition

B. Cocquelin, Gaëlle Lucas-Leclin and P. Georges

Laboratoire Charles Fabry de l’Institut d’Optique, Palaiseau, France

I. Sagnes

Laboratoire de Photonique et de Nanostructures, Marcoussis, France

D. Holleville

LNE/SYRTE - Observatoire de Paris , Paris, France

A. Garnache

Institut d’Électronique du Sud, Montpellier, France

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Lasers in

Cesium atomic clocks

Need for high-power and narrow-linewidth sources emitting at the Cesium D₂ line (852 nm)

⇒ a single OP-VECSEL ?

Scheme of an atomic fountain

Microwave interrogation : F_Cs = 9 192 631 770 Hz F = 3 F = 4 Cs D₂ line λ = 852 nm F = 5 4 3 2 Cs atomic levels Optical Detection Δν << 5 MHz Extended-cavity laser diodes Atoms cooling P_opt > 200 mW DFB/DBR diodes, MOPA, … 9.192 GHz 60 0 M H z Atom cooling P_opt > 200 mW DFB/DBR diodes, MOPA, …

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OP-VECSEL

at

850 nm

Pump module External mirror Semiconductor structure S u b st ra te Bragg mirror QW λP ≅ 700 nm λ_L ≅ 850 nm

• High power in Optically Pumped-VECSEL

30 W @ 980 nm, M2_{= 3}_{(Coherent - Photonics West '04)}

1.0 W in-well pump / 0.7 W @ 850 nm, M2_{= 5} _{(University of Strathclyde)} • No spatial hole-burning : single-frequency in simple linear cavity

500 mW @ 1003 nm (Jacquemet et al, App.Phys. B 86, 503 (2007))

42 mW @ 870 nm, ∆ν_L ≅ 3 kHz (Holm et al, IEEE PTL 11, 1551 (1999)) • Linearly polarized, circular TEM beam

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Design of

the

semiconductor

structure

• λL = 852 nm

• Barriers absorption at λP ≤ 720 nm

e_b ≅ 2 µm ⇒ η_P = 85%

• AR coating (Si₃N₄) at air/SC surface for :

maximum pump transmission

+ reduction of microcavity etalon effect • Structure grown by MOCVD

Reflectivity Photoluminescence Stop band 70 nm Rmax ≅ 99.97% 1.0 0.2 0.4 0.6 0.8 0.0 0.8 0.9 1.0 1.1 0.7 0.6 Energy Quantum wells Bragg Mirror |E|2 Substrate GaAs 350 µm 32.5 pairs λ/4 Al_0.22Ga_0.78As/AlAs R ≥ 99.95% Active Layers 29λ/4 GaAs N_QW= 7 ; L_QW = 8 nm Barriers Al_0.22Ga_0.78As InGaP Caping Layer (20 nm)

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Design

optimization

• Low threshold pump intensity I_th for high opt-opt efficiency

⇒ NQW= 7 is optimal for ~ 2% losses

0 1 2 3 4 5 0 5 10 15 20 T = 0.5% T = 1% T = 2% 10°C 40°C I th ( kW /c m 2 ) N_QW 190 105 I_tr (W/cm2₎ 830 1000 g₀(cm-1₎ 40°C 10°C T(°C) Experimental parameters ! I_th = NQWItr " exp T 2#NQWLQWg0 $ % & & ' ( ) ) Threshold intensity

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Single-frequency

s

etup

• Compact plane-concave cavity : L_ext_{≅ 10 mm}

• Single-transverse mode pump laser diode :

P_max_{= 120 mW (245 mA) at λ}_P = 658 nm

• 52 x 52 x 58 mm3_{integrated setup}_{for improved mechanical stability}

Pump Diode Output coupler + PZT Single-mode Laser Diode GaAs DBR QW Active Structure Output coupler T = 1% - R_C = 12 mm W_P = 20 µm Active Structure PZT

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Single-frequency emission

• Low threshold: 4.1 kW/cm²

• Good beam quality : M² < 1.2 and linear polarization

Output coupler T = 1% - R_C = 12 mm η = 17% I_th ≅ 4.1 kW/cm2 P_L = 17 mW (pump limited) T = 280 K 0 5 10 15 20 0 50 100 150

Incident Pump Power (mW)

O u tp u t P o w er ( mW ) 850.5 851.0 851.5 852.0 852.5 W av ele n g th (n m )

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Europhotons ‘08 Single-frequency diode-pumped semiconductor laser at the Cs line 8

Single-frequency emission

Output coupler T = 1% - R_C = 12 mm P_L = 17 mW (pump limited) T = 280 K 0 5 10 15 20 0 50 100 150

Incident Pump Power (mW)

O u tp u t P o w er ( mW ) 850.5 851.0 851.5 852.0 852.5 W av ele n g th (n m ) 0 1 2 3 4 5 F P s ig n a l (V ) FSR = 37.5 GHz

Scanning Fabry-Perot spectrum

• Single frequency operation without intracavity λ-selective element :

checked with a high Finesse (F = 130) 37.5-GHz-FSR scanning Fabry-Perot SMSR > 25 dB t_SM " TC # FSR $ % & ' ( ) 2 " 1ms

Single-mode spectrum in for L_ext = 10 mm

Jacquemet et al, App.Phys. B (2006)

T_C = photon lifetime (~ 10 ns) Γ = gain bandwidth (~ 10 nm)

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With

an intracavity

etalon

Output coupler T = 1% - R_C = 12 mm

• Increased losses at θ ≠ 0° ⇒  laser power : P = 7 mW @ 852.14 nm

etalon

25-µm thick (≅ 9 nm FSR) silica etalon

⇒ λ independent of operating conditions (T°, PP) + improved long-term stability

10-4 10-3 10-2 10-1 1 840 845 850 855 860 Wavelength (nm) λ = 852.14 nm (Cs) 9 nm

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Single-frequency tunability

• more than 15 GHz continuous tunability (without mode-hops)

by translating the external cavity mirror with PZT

Output coupler T = 1% - R_C = 12 mm

Frequency-shift measurement with a low-finesse static 1.5-GHz-FSR Fabry-Perot etalon

⇒ Tuning over the Cs-absorption spectrum (9 GHz)

0

-5 +5

Laser frequency shift (GHz)

P h o to d et ec te d s ig n al Cs absorption 1.5 GHz > 15 GHz FP transmision

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Extended-cavity laser diode Δν = 130 kHz PD

Beat-note set-up

Stabilization of the laser frequency

- at side of a Doppler-free Cesium line (5 MHz FWHM)

- on PZT voltage - 2-stage integration electronics - low-frequency servo loop (F < 2 kHz)

OP-VECSEL G PD Cs cell Fast photodiode RF analyzer 10-11 10-9 10-7 S δV ( V /H z 1 /2 )

With low-frequency gain

With optimized gain

10-5

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Extended-cavity laser diode Δν_1/2 = 130 kHz Δν_L = 15 kHz PD

Linewidth measurement

• FWHM linewidth ≅ 500 kHz : low-frequency noise contribution

• Lorentzian linewidth ≅ 70 kHz related to white noise floor RBW = 10 kHz SW. T = 10 ms AVE = 10 OP-VECSEL PD Cs cell Fast photodiode RF analyzer

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Towards higher

power

…

T = 1.1 % _{External Mirror}

HR @ 852 nm R = -100 mm

W_P = 40 µm

• 330 mW at P_P = 1.1 W

⇒ Thermal-limited output power

⇒ High output power on a GaAs substrate

G aA

s

λ = 855 nm (Δλ ≅ 1 nm)

Laser Diode Pump 5 W @ 690nm Ø = 100 µm 450 mW under QCW pumping 100 200 300 400 O u tp u t P o w er ( mW ) 845 850 855 860 W av el en g th ( n m ) T = 273 K ηext = 36% I_th ≅ 3.2 kW/cm2

• Single transverse mode

Silica etalon • 120 mW single-frequency t_S = 350 µm H E A T_S IN K

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Conclusion

– Design & fabrication of a AlGaAs/GaAs structure at λ = 852 nm optimized for low power/high efficiency operation

7 QWs

low threshold I_th ≤ 4 kW/cm2

– Single-frequency operation in a simple linear cavity

without λ-selective element : 17 mW with a 25-µm thick etalon : 7 mW

– Validation on a Cs atomic line

>15 GHz continuous tunability

frequency lock-in on an absolute reference (atomic line) comparison with an independent laser source : ΔνL = 500 kHz (-3dB / 10 ms sweep time)

– Increase of the single-frequency power under high power pumping

120 mW without specific thermal management

(GaAs substrate, no intracavity heatspreader)

⇒ evaluation of the spectral properties

+ thermal management for power scaling

at 852.14 nm Specifications already_{adequate for optical}

detection in atomic clocks