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In situ observation of laser induced crystallisation in group IV semiconductors.

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Academic year: 2021

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Figure

Figure 1. Schematic representation of the free energy in the amorphous solid (blue curve) and the crystalline solid allowing crystallizationto occurbelow the temperature for melt of the crystalline material (c-Ge and l-Ge are used to denote crystalline
Figure 2. Conventional transmission elechon microscopy (TElvf) bright field (BF) image showing the three qualitatively distinct morphological regions produced after single-shot nanosecond laser induced crystallization in a-Ge
Figure 3. Schematic representation of the co-propagation of the two interfaces i.e.
Figure 4. Possible interactions of the incident electron beam with the sample. The indicated direction for each signal shows where the signal is the strongest or where it is detected
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