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MÖSSBAUER EFFECT (ME) OF IMPURITIES IN HYDROGEN-LOADED PALLADIUM

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Submitted on 1 Jan 1976

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MÖSSBAUER EFFECT (ME) OF IMPURITIES IN

HYDROGEN-LOADED PALLADIUM

L. Iannarella, X. da Silva, J. Danon

To cite this version:

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JOURNAL DE PHYSIQUE Colloque C6, suppliment au no 12, Tome 37, Ddcembre 1976, page C6-377

MOSSBAUER

EFFECT

(ME) OF

IMPURITIES

IN HYDROGEN-LOADED PALLADIUM

L. IANNARELLA, X. A. DA SILVA and J. DANON Centro Brasileiro de Pesquisas Fisicas, Rio de Janeiro, Brazil

RCum6. - I1 a dejh et6 montr6 [l] que le deplacement isomerique (IS) de l'effet Mossbauer de 197Au, 195Pt, 193Ir et 99Ru dilues dans le palladium presente des variations systkmatiques quand la matrice est chargk d'hydrogene. La variation de IS correspond toujours a une diminution de la densite electronique au noyau de l'impurete.

Dans le present travail, nous suggbons que deux aspects fondamentaux doivent 6tre soulignes lors de I'interpretation de ces resultats :

1) Pour tous les isotopes, la variation de IS avec la concentration d'hydrogtne indique la presence des phases a et B dotees de valeurs differentes de IS.

99Ru semble 6tre I'isotope donnant la meilleure resolution pour etudier des diagrammes de phase. 2) Le probltme de I'interpretation de changements systematiques de IS lors du passage de la phase a a la phase 8, pour les isotopes ci-dessus.

A propos de la deuxi6me question, nous sugg6rons qu'un traitement convenable consiste

a

traiter l'impurete comme un ce'ntre de dispersion des electrons de conduction de la matrice. Les donnkes d'entree sont : a) les differences de structure Blectronique entre ies atomes de l'impurete et de la matrice (effets de charge et de nceud) ; b) Ia structure des bandes des 6tats de conduction de la matrice (Pd ou Pd-Ho.7). I1 est important d'observer que l'evaluation du potentiel d'impurete qui determine les densites tlectroniques qui contribuent au IS, depend de la solution des probltmes de dispersion dans lesquels a) et b) sont des conditions initiales. Des modifications de a) (substitution d'une impurete par une autre) ou de b) (modification de la structure de bande en allant de Pd B Pd-Ho.7) doivent montrer des variations de IS (observees experimentalement).

Dans un travail recent [2], il a et6 montre par la technique XPS que les structures de bande de Pd-H et Pd sont differentes. Ainsi par exemple, la phase B (H/Pd = 0,7) presente de nouveaux Btats situes immediatement au-dessous du fond des bandes correspondant au Pd.

Avec les arguments ci-dessus nous arrivons B la conclusion que la systematique de IS des impu- retes dans le Pd et Pd-H reflete l'importance des conditions a) et 6). Ces arguments renforcent ainsi notre idee que le mCme point de vue s'applique a la syst6matique du I S dans les alliages dilues des metaux de transition [3].

Une formulation thkorique generale traitant l'impurete comme un centre de dispersion selon le point de vue ci-dessus, a ete precedemment etablie [4]. Cependant, des resultats numeriques ne peu- vent 6tre obtenus qu'au moyen d'approxirnations importantes, ce qui ne permet pas la comparaison detaillk avec des resultats exp6rimentaux. En depit de cela, on peut s'attendre ace que des tendances gknerales puissent apparaitre m6me en utilisant des modeles Blementaires et des approximations convenables.

Abstract. - Previously [l] it was shown that the Isomer Shift (IS) of ME of 197Au, 195Pt, 19311- and 99Ru diluted in Palladium exhibited systematic changes when the host is loaded with hydrogen. The IS changes always correspond to a decrease of the electronic density at the impurity nuclei. In this work we suggest that in interpreting these results two basic features should be emphasized : 1) For all isotopes the change of IS with hydrogen content indicates the presence of a and

B

phases with two distinct values of IS. 99Ru seems to be the isotope of best resolution for the purpose of studying phase diagrams ;

2) The remaining problem of interpreting the systematic changes of IS, in going from a to B phase, for the above mentioned isotopes.

Concerning the second question we propose that an appropriate formulation consists in treating the impurity as a scattering center for the matrix conduction electrons. The input data are : a) diffe- rences in electronic structure between the impurity and host atoms (charge and node effects) ; b) the band structure of the matrix conduction states (Pd or Pd-Ho.7). One should note that the self consistent evaluation of the impurity potential, which determines the electronic densities of interest to IS, depends on the solution of the scattering problems in which a) and b) are initial conditions. Changes in conditions a) (substitution of an impurity for another) or b) (modification of the band structure when one goes from Pd to Pd-Ho.7) should give rise to IS variations (experimentally observed). In a recent paper [2] it was shown by XPS technique that the band structure of Pd-H and Pd are different ; e. g. the B phase (H/Pd 0.7) has new states just below the bottom of the corres-

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L. IANNARELLA, X. A. DA SILVA and J. DANON

ponding d bands of Pd. From the above arguments we come to theconclusion that the Issystematics of ME of impurities in Pd and Pd-H reflect the importance of items a) and b). They also reinforce our opinion that the same point of view applies for the systematics of IS in diluted alloys of transition metals [3]. A general theoretical formulation which treats the impurity as a scattering center along the lines above mentioned has previously been done 141. Numerical results, however, can only be

obtained using drastic approximations which rules out detailed comparison with experimental results. Notwithstanding one would expect that general trends should emerge even using crude models and adequate approximations.

References

[l] IANNARELLA, L., WAGNER, F. E., WAGNER, U. and DANON, J.,

J. Physique 35 (1974) C 6-517.

[2] ANTONANGELI, E., BALZAROTTI, A., BIANCONI, A., BURAT- TINI, E., PERFETTI, P. and NISTIC~, N., Phys. Lett. 55A

(1975) 309.

[3] WAGNER, F. E., WORTMANN, G. and KALVIUS, G. M., Phys. Lett. 42A (1973) 483.

[4] DA SILVA, X. A., GOMES, A. A. and DANON, J., Phys. Rev. B 4

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