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Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs

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Academic year: 2021

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HAL Id: hal-02922723

https://hal.laas.fr/hal-02922723

Submitted on 1 Sep 2020

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Recessed and P-GaN regrowth gate development for

normally-off AlGaN/GaN HEMTs

Chaymaa Haloui, Toulon Gaëtan, Josiane Tasselli, Yvon Cordier, Éric

Frayssinet, Karine Isoird, Frédéric Morancho, Mathieu Gavelle

To cite this version:

Chaymaa Haloui, Toulon Gaëtan, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, et al.. Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs. 28 International Conference MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, Jun 2020, Wroclow, Poland. �hal-02922723�

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