• Aucun résultat trouvé

Effect of stress on vacancy formation and diffusion in fcc systems: Comparison between DFT calculations and elasticity theory

N/A
N/A
Protected

Academic year: 2021

Partager "Effect of stress on vacancy formation and diffusion in fcc systems: Comparison between DFT calculations and elasticity theory"

Copied!
15
0
0

Texte intégral

Figure

Fig.  1. From left to right: detail of atomic jumps for hydrostatic ( p ), [001] (  σ zz  ) and [111] (  σ 111  ) uni-axial stresses, and for shear stress in plane [010] (  σ xy  )
Fig.  2. Formation and migration energies (top) and enthalpies (middle) in alu-  minum as a function of pressure, under hydrostatic loading
Fig.  3. Vibrational formation and migration enthalpies in aluminum as a function of hydrostatic pressure for different temperature.
Fig.  4. Vacancy concentration as function of T in Al, Cu, Ni and Pd systems under different hydrostatic loadings in the range of -8 to +8GPa.
+5

Références

Documents relatifs