DESCRIPTion
The LT1022 JFET input operational amplifier combines high speed and precision performance.
A 26V I /1S slew rate and S.5MHz gain-bandwidth product are simultaneously achieved with offset voltage of typical-ly SO/1V, 1.5/1V 1°C drift, bias currents of 50pA at lOoe, 500pA at 125°C. The output delivers 20mA of load cur-rent without gain degradation.
The 250/1V maximum offset voltage specification repre-sents less than 1/2 least significant bit error in a 14-bit, 10V system.
The LT1022A meets or exceeds all OP-16A and OP-16E specifications. It is faster and more accurate without stability problems at cold temperatures.
The LT1 022 can be used as the output amplifier for 12-bit current output 01 A converters, as shown below.
For a more accurate, lower power dissipation, but slower JFET input op amp, please refer to the LT1055 data sheet.
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Large Signal Response
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AV=1. CL=100pF. 0.5",/OIV TA=25°C. Vs= ± 15V
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ABSOLUTE mAXimum RATinGS
Supply Voltage. . . . .. ± 20V Differential I nput Voltage ... ± 40V Input Voltage ... ± 20V Output Short Circuit Duration ... Indefinite Operating Temperature Range
LT1 022AM I 1022M . . . .. - 55°C to 125°C LT1022AC/1022C ... O°Ct070°C Storage Temperature Range
All Devices. . . . .. - 65°C to 150°C Lead Temperature (Soldering, 10 sec.) .. . . . .. 300°C
ELECTRICAL CHARACTERISTICS
Vs
=
± 15V, TA=
25°C, VCM=
OV unless otherwise notedSYMBOL PARAMETER CONDITIONS
vas Input Offset Voltage (Note 1) H Package N8 Package los Input Offset Current Fully Warmed Up
IB Input Bias Current Fully Warmed Up
VCM = +10V Input Resistance-Differential
-Common-Mode VcM =-11Vto +8V VCM = +8V to +11V Input Voltage Range
CMRR Common-Mode Rejection Ratio VCM= ±10.5V PSRR Power Supply Rejection Ratio Vs= ± 10V to ± 18V
VOUT Output Voltage Swing RL =2k
SR Slew Rate
GBW Gain-Bandwidth Product f=1MHz
Is Supply Current
Settling Time A= +1 or A=-1
10V Step to 0.05%
10V Step to 0.02%
PACKAGE/ORDER InFORmATiOn
TOP VIEW
ELECTRICAL CHARACTERISTICS
Vs= ±15V, VCM=OV, O°C~TA~70°C unless otherwise notedLT1022AC LT1022CH
LT1022CN8
SYMBOL PARAMETER CONDITIONS MIN TVP MAX MIN TYP MAX UNITS
Vos Input Olfset Voltage (Note 1) H Package N8 Package
• •
-- 140 - 480 - -- 180 300 1000 1700 !'V !'VAverage Temperature Coelficient of Input Olfset H Package N8 Package (Note 5)
• •
-- 1.3 - 5.0 - -- 1.8 3.0 90 15.0 !,V/'C !'V I 'CVoltage
los Input Olfset Current Warmed Up,TA=70'C
•
- 15 80 - 18 100 pAIs Input Bias Current Warmed Up, TA = 70°C
•
- ± 50 ±200 - ±60 ±250 pAAVOL Large Signal Voltage Gain Vo= ± 10V, RL =2k
•
80 250 - 60 250 - V/mVCMRR Common-Mode Rejection Ratio VCM = ± 10.4V
•
85 93 - 80 91 - dBPSRR Power Supply Rejection Ratio Vs= ± 10V to ± 18V
•
86 103 - 84 101 - dBVOUT Output Voltage Swing RL =2k
•
±12 ±13.1 - ±12 ±13.1 - VELECTRICAL CHARACTERISTICS
Vs= ±15V, VCM=ov, -55°C~TA~125°C unless otherwise notedSYMBOL PARAMETER CONDITIONS
Vos Input Olfset Voltage (Note 1) Average Temperature (Note 5) Coefficient of Input Offset
Voltage
los Input Offset Current Warmed Up, TA = 125°C Is Input Bias Currenl Warmed Up, TA = 125'C AVOL Large Signal Voltage Gain Vo= ± 10V, RL =2k CMRR Common-Mode Rejection Ratio VCM=±10.4V PSRR Power Supply Rejection Ratio Vs= ± 10V to ± 17V VOUT Output Voltage Swing RL = 2k
The. denotes the specifications which apply over the full operating temperatu re range.
Note 1: Offset voltage is measured under two different conditions:
(a) approximately 0.5 seconds after application of power;
(b) at TA=25'C, with the chip self-heated to approximately 45'C to account for chip temperature rise when the device is fully warmed up.
Note 2: 10Hz noise voltage density is sample tested on every lot of A grades. Devices 100% tested at 10Hz are available on request.
LT1022AM LT1022M
MIN TYP MAX MIN TYP MAX UNITS
•
- 230 750 - 300 1500 !'V•
- 1.5 5.0 - 2.0 9.0 !,V/'C•
- 0.3 2.0 - 0.30 3.0 nA•
- ±0.5 ±4.0 - ±0.7 ±6.0 nA•
40 120 - 35 120 - V/mV•
85 92 - 80 90 - dB•
86 102 - 84 100 - dB•
± 12 ± 12.9 - ± 12 ± 12.9 - VNote 3: This parameter is tested on a sample basis only.
Note 4: Current noise is calculated from the formula: in = (2qls)'h, where q = 1.6 X 10-19 coulomb. The noise of source resistors up to lGfl swamps the contribution of current noise.
Note 5: Offset voltage drift with temperature is practically unchanged when the offset voltage is trimmed to zero with a lOOk potentiometer be-tween the balance terminals and the wiper tied to V+ . Devices tested to tighter drift specifications are available on request.
HI
TYPICAL PERFORmAnCE CHARACTERISTICS
"I -1 CL=300pIF\""l CL=10pF
1 10 100 lk 10k lOOk 1M 10M 100M 1 10 30
FREQUENCY (Hz)
Undistorted Output Swing vs Frequency
FREQUENCY (MHz)
Small Signal Response
Av= + 1, CL = 100pF, 0.2"5/DIV
Phase Margin, Gain Bandwidth Product, Slew Rate vs TEMPERATURE ('C)
Settling Time
-10L-~-L~~L--L~~~
o 1 2
SETTLING TIME ("5)
The typical behavior of many LT1 022 parameters is identical to the LT1 056. Please refer to the LT1 055/ 1 056 data sheet for the following typical performance characteristics:
Input Bias and Offset Currents vs Temperature Input Bias Current Over the Common-Mode Range Distribution of Input Offset Voltage (H and N8 Package) Distribution of Offset Voltage Drift with Temperature Warm-Up Drift
Long Term Drift of Representative Units O.1Hz to 10Hz Noise
Voltage Noise vs Frequency Noise vs Chip Temperature
Output Impedance vs Frequency Common-Mode Range vs Temperature Common-Mode and Power Supply Rejections vs
Temperature
Common-Mode Rejection Ratio vs Frequency Power Supply Rejection Ratio vs Frequency Voltage Gain vs Temperature
Supply Current vs Supply Voltage Output Swing vs Load Resistance Short Circuit Current vs Time
APPLICATions InFoRmATion
The LT1 056 applications information is directly applicable to the LT1022. Please consult the LT1055/1056 data sheet for details on:
(1) plug-in compatibility to industry standard devices (2) offset nulling
(3) achieving picoampere/microvolt performance
TYPICAL APPLICATiOnS
(4) phase-reversal protection
(5) high speed operation (including settling time test circuit)
(6) noise performance
(7) simplified circuit schematic.
Fast Piezoelectric Accelerometer
ENDEVCD #2215 ACCELEROMETER
1pF-5pF
OUTPUT
10Hz to 1 MHz Voltage-to-Frequency Converter
1.8k
+ 15V
--'1,.,.,. ... ---,
OV
T~~~0 ~N5k~-'Io221V'.1""k -+'-I-i~
(METAL FILM) 3
1k
1k
100pF (POLYSTYRENE)
+15V
1.8k
100k
~,,---+15V 1.8k
10pF 10k
+---t-TIL OUTPUT
1.8k 4.7k
-15V
1.8k
-15V +15V
lit
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TYPICAL APPLICATions
PIN Photodiode-to-Frequency Converter
5pF FULL-SCALE TRIM
SCALE FACTOR =
lnW/Hz AT 900 NANOMETERS FROM 20nW TO 2mW
~* =HEWLEIT PACKARD PHOTODIODE HP5082-4204 ...r=lN4148
tpOL YSTYRENE
"SELECT VALUE FOR 2mW IN = 2MHz OUT.
r - - . - - - +15V
1.8k
Wide Bandwidth Absolute Value Circuit Fast, Differential Input Current Source
10k"
10k" *0.1%
OUTPUT OVTO +10V
1 % ACCURACY TO 300kHz 5% ACCURACY TO 700kHz
R" 10pF R"
R"
IOUT= VIN2- VIN1 R
lOUT RL
' - - - -
...
---~-"MATCH TO 0.01%
FULL-SCALE POWER BANDWIDTH
=lMHz FOR IOUTR=8Vp-p
= 400kHz FOR I OUTR = 20Vp-p MAXIMUM I DUT= 10mAp-p
COMMON-MODE VOLTAGE AT LT1022 INPUT = I DUTp-p x RL 2
TYPICAL APPLICATions
High Output Current Op Amp
RS
-15V -15V
IN~i""'..J\,jl .. k"""+-_ _ - I
20k -15V
16ns APERTURE TIME
10k
OUTPUT
SLEW RATE~26V/", IOUT~150mA CL CAN BE l~f Av~ +1, Cf~1000pf Av~ -1, Cf~10pf
Fast, Precision Sample-Hold
lk
5k
Low Oistortion Sine Wave Oscillator
430n OUTPUT
'1% fiLM
10k DUAL POTENTIOMETER -MATCH TRACKING TO 0.1%
tMATCH CAPACITORS TO 0.1%
5kHz TO 50kHz RANGE DISTORTION < 0.1 % AMPL1TUDE~ lBVp-p_
1000pf
T
POLYSTYRENE15pf
OUTPUT
10k
3.5k 2,,5 ACQUISITION TIME TO 0.01 %
SAMPLE-HOLD OffSET < 250MV
HOLD SETTLING < lOOns COM~~~~~~~~~~---~
TRIM
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PACKAGE DESCRIPTion
Dimensions in inches (millimeters) unless otherwise noted.H Package Metal Can
N8 Package 8 Lead Plastic
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0.24010.280~i 16.09T1121
J L
11.0161 MAX 0.040 11.5241 0.060 0.370-0.400 so~
rI9.400_10.161:t
...--- 10~~81 t m I::~;I
MIN0.155-0.175 13.937-4.4451
t ~
0.125-0.130 ~
~
t
12.921.3.6831~ (O.76;y~.524)
t JJjt~
(~:~~I 0.014-0.023
TYP (0.356-0.584)
TYP
0.165-0.185 (4.191-4.699) 0.500-0.750
t
112.70-19.051 t
R
I I '±5' . 0 -, ," ,
" "
J"
b·008_0.0lS 10.203-0.3811J~
TYP 0.290-0.310 17.366-7.8741
00_15°
'LEADS WITHIN 0.007 OF TRUE POSITION (TP) AT GAUGE PLANE
--L7~!Il~!I"---D-U-a-I,-M-a-~-~-~-~-~
FEATURES
• Guaranteed Offset Voltage 50/LV Max.
• Guaranteed Bias Current
25°C 120pA Max.
- 55°C to 125°C 700pA Max.
• Guaranteed Drift 1.5/LV JOC Max.
• LowNoise,0.1Hzt010Hz 0.5/LVp-p
• Guaranteed Supply Current 600/LA Max.
• GuaranteedCMRR 112dBMin.
• Guaranteed PSRR 112dB Min.
• Guaranteed Voltage Gain with 5mA Load Current
• Guaranteed Matching Characteristics
APPLICATions
• Strain Gauge Signal Conditioner
• Dual Limit Precision Threshold Detection
• Charge Integrators
• Wide Dynamic Range Logarithmic Amplifiers
• Light Meters
• Low Frequency Active Filters
• Standard Cell Buffers
• Thermocouple Amplifiers
Two Op Amp Instrumentation Amplifier
Rl lOOk"
R2 10k
R5 2.2kt
INPUT{ _ _ _ _ _ _ - - - I
GAIN-M [1+.1 - R3 2 Rl (B£+ill.) R4 + R2+R3j -100 R5 -R4 lOOk
TYPICAL PERFORMANCE:
OFFSET VOLTAGE= 20"V BIAS CURRENT = 30pA