Cet assemblage determine plusieurs families de diodes de reference qui se distinguent par Ie courant auquel la variation de tension est garantie et par Ie domaine de ·temperature . Les notices indiquent

une valeur typique de la tension qui peut s'ecarter de 6,2 V selon la technologie de fabrication.

FIGURE 2

t.VF/t.T (mV/OC)

t--2 !

-

"'--I--t--

f-f-~

.::... r-.

~--

~..,.

~.~

.,_ c _

I~'-_

·-1.5

1-\--'

'Ooc'

SoOc

r-t---':-- -~~t~+--

^N '550 - )Soc

f- f-r-L -- t-+- -- _~t~C~~~

-~-- c-- - '

-f

---1--+-'

^...

f-+--1 I

-~-=rt

- -

+-

^f--- ^{- - -}

^-f-

^- ^{-- --f-'}

f-- f--

-iT"

~t=

--orr

^--c-

^{- -}^-

^--f-

^{. - f - --} ⁾

-- --

t+ ^f---r

^f-

r-600 650 700 750

VF (mV)

Variation du coefficient de temperature de la tension d'une jonction polarisee en direct

SERIES VZT IZT temperature

t.VZ max ra(!l,e

(V) (mA) (0 (V)

IN 4565 to 4569

6,4 0,5

°

^to

⁺

⁷⁵ 0,048 to 0,002

1 N 4565 A to 4569 A - 55 to

+

100 0,099 to 0,005

1 N 4570 to 4574 6,4 1

°

^to

⁺

⁷⁵ 0,048 to 0,002

1 N 4570 A to 4574 A - 55 to

+

100 0,099 to 0,005

1 N 4575 to 4579 6,4 2

°

^to

⁺

⁷⁵ 0,048 to 0,002

1 N 4575 A to 4579 A - 55 to

+

100 0,099 to 0,005

1 N 4580 to 4584 6,4 4

°

^to

⁺

⁷⁵ 0,048 to 0,002

IN 4580 A to 4584 A - 55 to

+

100 0,099 to 0,005

1 N 3496 to 3500 6,2 7,5

°

^to

⁺

⁷⁵ 0,048 to 0,002

1 N 821, A to 829 , A 6,2 7,5 - 55 to

+

100 0,096 to 0,005

9 V reference voltage families

Under the same conditions as above, matching a reverse biassed junction with two forward biassed junc~

tions gives 9 V voltage reference diodes at 7,5 mA (2 t. VF/t. T = 2,8 mV/oC, value compensated by t. VR/t. T =

+

2,8 mV/oC i.e. VR = 7,8 V).

Temperature

SERIES VZT IZT range t.VZ max

(VI (mA) (DC) (VI

IN 935 to 939

°

^to

⁺

⁷⁵ 0,67 to 0,003

1 N 935 A to 939 A 9 7,5 - 55 to

+

100 0,139 to 0,007

1 N 935 B to 939 B - 55 to

+

150 0,184 to 0,009

174

VZT IZT Domaine de

t>VZ max

SERlE temperature

(V) (mA) (oC) (V)

1N 4565

a

4569 6,4 0,5

o a

⁺75 0,048 11 0,002 1N 4565 A

a

4569 A - 55

a

⁺100 0,099

a

0,005 1N 4570

a

4574 6,4 1

o a

⁺75 0,048

a

0,002 1N 4570 A

a

4574 A - 55

a

⁺100 0,099 11 0,005 1N 4575

a

4579 6,4 2

o a

⁺75 0,048 11 0,002 1N 4575 A

a

4579 A - 55

a

⁺100 0,099 11 0,005

1N 4580

a

4584 6,4 4

o a +

75 0,048

a

0,002

1N 4580 A

a

^{4584 A} ^{- 55}

a

⁺¹⁰⁰ 0,099 11 0,005

1 N 3496

a

3500 6,2 7,5

o a

⁺75 0,048

a

0,002

1N 821, A

a

^{829, A} 6,2 7,5 - 55

a ⁺

100 0,096

a

0,005

Families de tension de reference 9 V

Dans les memes conditions que pnicedemment, I'association d'une jonction en inverse et de deux jonctions en direct permet d'obtenir des diodes de reference de tension 9 V

a

7,5 mA

(2 L; VF!t> T ~ - 2,8 mV!OC, valeur compensee par t> VR!t> T ~ + 2,8 mV!OC, soit VR ~ 7,8 V).

VZT IZT Domaine de

I

t> Vz max

SERlE temperature

(V) (mA) (oC) ! (V)

-1N 935

a

939

o a

⁺75 0,067

a

0,003

1 N 935 A

a

939 A 9 7,5 - 55

a

⁺100 0,139

a

^0,007

1 N 935 B

a

^{939 B} ^{- 55 11}⁺¹⁵⁰ 0,184

a

0,009

8,4 V and 8,5 V reference voltage families

The structure of these diodes are the same as for 9 V type diodes. They are obtained through suitable selection of temperature coefficients of forward and reverse biassed junctions.

Temperature

SERIES VZT IZT range tI Vz max

(V) (rnA) (oC) (V)

1 N 3154 to 3157 8.4 10 -55to+100 0,130 to 0,013

1N 3154 A to 3157 A -- 55 to + 150 0,172 to 0,017

1N 4775 to 4779

8,5 0,5

o

^{to + 75} 0,064 to 0,003

1 N 4775 A to 4779 A - 55 to + 100 0,132 to 0,007

IN 4780 to 4784

8,5 1

o

^{to + 75} 0,064 to 0,003

1 N 4780 A to 4784 A - 55 to + 100 0,132 to 0,007

CHARACTERIZATION OF TEMPERATURE COMPENSATION

For each family of diodes, the temperature compensation of the various types is characterized by the maximum variation of the regulation voltage tI

Vz

within a specified temperature range and by the temperature coefficient Ct VZ.

Temperature coefficient

The first characterization method for temperature compensated reference diodes required that the maximum voltage variation tI

Vz

with temperature be included between two straight lines ±a

Vz

passing through the 25°C reference point (figur.e 31. Such a characterization takes into account that the temperature coefficient of the most efficient diodes changes within the specified temperature range. However, this method requires a large. number of measuring points to ensure that tI

Vz

remains within the area determined by both straight lines, without providind the user with an additional guaranty on the value of Ct

Vz

at a given temperature. This characterization method has since been replaced by the «Box method».

176

Families de tension de reference 8,4 et 8,5 V

Ces diodes ont la meme structure que les types 9 V et sont obtenues par un choix convenable des coefficients de temperature des jonctions en direct et en inverse.

SERlE VZT IZT Domaine de

temperature ^~VZmax

(V) (mA) (Oe) (V)

1N 3154 II 3157 - 55

a

+ 100 0,130

a

0,013

1N 3154 A

a

^{3157 A} ^8,4 ¹⁰ - 55

a

+ 150 0,172

a

0,017

1 N 4775

a

4779

° ^a

⁺⁷⁵ ^0,064

^a

^0,003

1N 4775 A

a

4779 A 8,5 0,5 - 55

a

+ 100 0,132

a

0,007

1N 4780

a

4784 8,5 1

° ^a

⁺⁷⁵ ^0,064

^a

^0,003

1N 4780 A

a

4784 A - 55

a

+ 100 0,132 110,007

CARACTERISATION DE LA COMPENSATION EN TEMPERATURE

Dans chaque famille de diodes, la compensation en temperature des differents types est caracterisee par la variation maximale de la tension de regulation ~ Vz dans un domaine de temperature speci . fie et par Ie coefficient de temperature DiVZ.

Coefficient de temperature

La premiere methode de caracterisation des diodes de reference compensees en temperature impo·

sait que la variation maximale ~ Vz de la tension en fonction de la temperature soit comprise en·

tre deux droites de pente ± DiVZ passant par Ie point de reference 25 oC ('figure 3). Une telle carac·

terisation tient compte du fait que Ie coefficient de temperature des diodes les plus performantes va-rie

a

I'interieur du domaine de temperature specifie. Cependant, elle presente I'inconvenient d'exi -ger un grand nombre de points de mesure pour garantir que ~ Vz ne depasse pas les limites de I'aire delimitee par les droites, sans donner II I'utilisateur de garantie suppltlmentaire sur la valeur de DiVZ

a

une temperature donnee. Cette methode de caracterisation a donc ete substituee par la methode dite «Box method».

Box method

This method is used by THOMSON-CSF to characterize the temperature compensated reference diodes. The maximum variation of the regulation voltage,

a.

VZ, given on page 1 of each data sheet, is guaranteed between any two temperatures within the specified range. Measurements are carried out at the specified temperatures.

In addition, each data sheet includes one or several figures which show the maximum voltage variation

a.

Vz ( positive or negative) of each type. The curves showing the variation of

a.

Vz versus ambient temperature, as well as the values of aVz coefficients must be considered as typical values. Figure 4 shows the value

a.

Vz max and the variation of Vz for a diode specified 1 N 939 A following this method.

Tests are carried out in a variable temperature enclosure which can be programmed from -

55

100

150

0C. This method is not as accurate as the oil bath method, but it provides measuring conditions very close to normal operating conditions. In fact, in the oil bath, the thermal impedan-ce is very low and the junction temperature is close to ambient temperature. I n free air measurements, the junction-ambient temperature difference is of the order of

10

15

0C, thus increasing the Junction temperature at extreme values, where the temperature coettlclent changes rapidly With temperature. Temperature coefficients are generally expressed in terms of %/oC or ppm ( parts per million ).

FIGURE 3

25⁰C temperature range

Temperature compensation characterization by means of the temperature coefficient

178

FIGURE 4

- 55

o

75

100 oC

Temperature compensation characterization by means of the Box method

Dans le document THOMSON-CSF DIVISION SEMI (Page 163-169)

Cet assemblage determine plusieurs families de diodes de reference qui se distinguent par Ie courant auquel la variation de tension est garantie et par Ie domaine de ·temperature . Les notices indiquent

une valeur typique de la tension qui peut s'ecarter de 6,2 V selon la technologie de fabrication.

t.VF/t.T (mV/OC)

-

"'--I--t--

f-f-~

~--

~.~

.,_ c _

1-\--'

SoOc

r-t---':-- -~~t~+--

f- f-r-L -- t-+- -- ~t~C~~~

-f

---1--+-'

-~-=rt

+-

-f-

-iT"

~t=

--orr

--c-

--f-

t+ f---r

VF (mV)

°

+

+

°

+

+

°

+

+

°

+

+

°

+

+

+

°

+

+

+

a

o a

a

a

a

a

o a

a

a

a

a

o a

a

a

a

o a +

a

a

a

a

o a

a

a

a +

a

a

I

a

o a

a

a

a

a

a

a

f- f-r-L -- t-+- -- _~t~C~~~

^-f-

^--c-

^--f-

t+ ^f---r

⁺

⁺

⁺

⁺

⁺

⁺

a ⁺

° ^a

^a

° ^a

^a